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A kind of zncuno/zncolio multiferroic magnetoelectric coupling homogeneous pn junction and its preparation method and application

A magnetoelectric coupling, PN junction technology, applied in semiconductor/solid-state device manufacturing, circuits, electrical components, etc., can solve problems such as fatigue devices, memory information loss, unfavorable device integration, etc., to achieve good ferroelectricity and ferromagnetism, The effect of good magnetoelectric coupling characteristics and good lattice matching

Active Publication Date: 2019-03-22
LINGNAN NORMAL UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] Multiferroic materials are mainly some manganates (such as BiMnO 3 ) and ferrites (such as BiFeO 3 ), however, most of the multiferroic materials have a perovskite structure, which is very different from the structure of semiconductor materials, which is not conducive to device integration. Therefore, the magnetic properties (such as dilute magnetic semiconductors) and ferroelectricity based on semiconductor materials have always been people's close attention
On the other hand, in ferroelectric memory (FRAM), conventional ferroelectric memory materials such as PbZr x Ti 1-x o 3 、SrBi 2 Ta 2 o 9 The structure is also very different from single crystal Si, so when deposited on a single crystal Si substrate, a large number of surface defects will be formed due to structural mismatch, resulting in device failure problems such as information loss, polarization inversion, and fatigue in the memory.
To solve these problems, measures such as rare earth metal doping or pre-depositing conductive oxides between ferroelectric materials and Si substrates are required, which complicates the technical process. Therefore, it is necessary to develop storage materials that match the Si structure.

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  • A kind of zncuno/zncolio multiferroic magnetoelectric coupling homogeneous pn junction and its preparation method and application
  • A kind of zncuno/zncolio multiferroic magnetoelectric coupling homogeneous pn junction and its preparation method and application
  • A kind of zncuno/zncolio multiferroic magnetoelectric coupling homogeneous pn junction and its preparation method and application

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Effect test

Embodiment 1

[0037] The preparation method of the ZnCuNO / ZnCoLiO multiferroic magnetoelectric coupling homogeneous PN junction of the present embodiment comprises the following steps:

[0038] (1) First, ultrasonically clean the n-Si(111) substrate, N 2 After drying, place it on the substrate frame in the chamber, when the background vacuum in the chamber reaches 3×10 -4 After Pa, Ar gas was introduced until the pressure reached 0.8Pa, the substrate temperature was adjusted at 400°C, and the substrate bias was -800V, and the n-Si(111) substrate was glow-cleaned.

[0039] (2) After the glow cleaning is finished, feed and adjust Ar and O 2 When the air pressure is 0.9Pa, turn on the oxygen feedback device to control O 2 The flow rate is 80sccm, the bias voltage is -200V, the temperature is 300°C, and the rotation speed of the substrate holder is 3 rpm, the ZnO DC magnetron sputtering target is turned on, and a 400 nm thick ZnO buffer layer is deposited.

[0040] (3) Passing Ar, N 2 and ...

Embodiment 2

[0046] The preparation method of the ZnCuNO / ZnCoLiO multiferroic magnetoelectric coupling homogeneous PN junction of the present embodiment comprises the following steps:

[0047] (1) First, ultrasonically clean the n-Si(111) substrate, N 2 After drying, place it on the substrate frame in the chamber, when the background vacuum in the chamber reaches 3×10 -4 After Pa, Ar gas was introduced until the pressure reached 0.9 Pa, the substrate temperature was adjusted at 400°C, and the substrate bias was -900V, and the n-Si(111) substrate was glow-cleaned.

[0048] (2) After glow cleaning, adjust Ar and O 2 When the air pressure is 0.9Pa, turn on the oxygen feedback device to control O 2 The flow rate is 80sccm, the bias voltage is -200V, the temperature is 300°C, and the rotation speed of the substrate holder is 3 rpm, the ZnO DC magnetron sputtering target is turned on, and a 400 nm thick ZnO buffer layer is deposited.

[0049] (3) Passing Ar, N 2 and O 2 Gas and adjust the...

Embodiment 3

[0054] The preparation method of the ZnCuNO / ZnCoLiO multiferroic magnetoelectric coupling homogeneous PN junction of the present embodiment comprises the following steps:

[0055] (1) First, ultrasonically clean the n-Si(111) substrate, N 2 After drying, place it on the substrate frame in the chamber, when the background vacuum in the chamber reaches 3×10 -4 After Pa, Ar gas was introduced until the pressure reached 1.8 Pa, the substrate temperature was adjusted at 400°C, and the substrate bias was -800V, and the n-Si(111) substrate was glow-cleaned.

[0056] (2) After glow cleaning, adjust Ar and O 2 When the air pressure is 0.9Pa, turn on the oxygen feedback device to control O 2 The flow rate is 80sccm, the bias voltage is -200V, the temperature is 300°C, the substrate holder rotates at 4rpm, the ZnO DC magnetron sputtering target is turned on, and a 400 nm thick ZnO buffer layer is deposited.

[0057] (3) Passing Ar, N 2 and O 2 Gas and adjust the air pressure at 1....

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Abstract

The invention belongs to the technical field of material synthesis, and particularly discloses a ZnCuNO / ZnCoLiO multiferroic magnetoelectric coupling homogeneous PN junction, a preparation method thereof and applications. The homogeneous PN junction comprises a ZnO buffer layer deposited on an n-Si (111) substrate base body, a p-type ZnCuNO ferromagnetic layer deposited on the ZnO buffer layer, an n-type ZnCoLiO ferroelectric layer deposited on the ZnCuNO ferromagnetic layer, a top electrode layer and a bottom electrode layer. The magnetoelectric coupling homogeneous PN junction has good lattice matching performance with Si, and has good ferroelectricity, a ferromagnetic property and a magnetoelectric coupling characteristic. The magnetoelectric coupling homogeneous PN junction has two degrees of freedom of electric charge and spinning, and control can be carried out on the two degrees of freedom through an external electric field and a magnetic field respectively, thereby being used for designing and developing a ternary or quaternary memory device, realizing high-density storage of information, and having great application prospects in the field of high-density memories.

Description

technical field [0001] The invention relates to the technical field of material synthesis, and more specifically relates to a ZnCuNO / ZnCoLiO multiferroic magnetoelectric coupling homogeneous PN junction and its preparation method and application. Background technique [0002] Multiferroics combine the two basic physical properties of ferromagnetism and ferroelectricity, and are information functional materials that have attracted much attention in recent years. As we all know, ferroelectricity realizes the storage of digital information through the spontaneous polarization formed by atomic displacement in ferroelectric crystals; in contrast, ferromagnetism realizes the storage of information through the orderly arrangement of electron spins in ferromagnetic materials. Multiferroicity refers to both ferroelectric and ferromagnetic properties, which is the physical basis for designing new high-density memories. Compared with ordinary storage materials, multiferroic materials ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/82H01L21/34
CPCH01L29/66969H01L29/82
Inventor 邹长伟邵乐喜王佳梁枫
Owner LINGNAN NORMAL UNIV
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