A kind of zncuno/zncolio multiferroic magnetoelectric coupling homogeneous pn junction and its preparation method and application
A magnetoelectric coupling, PN junction technology, applied in semiconductor/solid-state device manufacturing, circuits, electrical components, etc., can solve problems such as fatigue devices, memory information loss, unfavorable device integration, etc., to achieve good ferroelectricity and ferromagnetism, The effect of good magnetoelectric coupling characteristics and good lattice matching
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Embodiment 1
[0037] The preparation method of the ZnCuNO / ZnCoLiO multiferroic magnetoelectric coupling homogeneous PN junction of the present embodiment comprises the following steps:
[0038] (1) First, ultrasonically clean the n-Si(111) substrate, N 2 After drying, place it on the substrate frame in the chamber, when the background vacuum in the chamber reaches 3×10 -4 After Pa, Ar gas was introduced until the pressure reached 0.8Pa, the substrate temperature was adjusted at 400°C, and the substrate bias was -800V, and the n-Si(111) substrate was glow-cleaned.
[0039] (2) After the glow cleaning is finished, feed and adjust Ar and O 2 When the air pressure is 0.9Pa, turn on the oxygen feedback device to control O 2 The flow rate is 80sccm, the bias voltage is -200V, the temperature is 300°C, and the rotation speed of the substrate holder is 3 rpm, the ZnO DC magnetron sputtering target is turned on, and a 400 nm thick ZnO buffer layer is deposited.
[0040] (3) Passing Ar, N 2 and ...
Embodiment 2
[0046] The preparation method of the ZnCuNO / ZnCoLiO multiferroic magnetoelectric coupling homogeneous PN junction of the present embodiment comprises the following steps:
[0047] (1) First, ultrasonically clean the n-Si(111) substrate, N 2 After drying, place it on the substrate frame in the chamber, when the background vacuum in the chamber reaches 3×10 -4 After Pa, Ar gas was introduced until the pressure reached 0.9 Pa, the substrate temperature was adjusted at 400°C, and the substrate bias was -900V, and the n-Si(111) substrate was glow-cleaned.
[0048] (2) After glow cleaning, adjust Ar and O 2 When the air pressure is 0.9Pa, turn on the oxygen feedback device to control O 2 The flow rate is 80sccm, the bias voltage is -200V, the temperature is 300°C, and the rotation speed of the substrate holder is 3 rpm, the ZnO DC magnetron sputtering target is turned on, and a 400 nm thick ZnO buffer layer is deposited.
[0049] (3) Passing Ar, N 2 and O 2 Gas and adjust the...
Embodiment 3
[0054] The preparation method of the ZnCuNO / ZnCoLiO multiferroic magnetoelectric coupling homogeneous PN junction of the present embodiment comprises the following steps:
[0055] (1) First, ultrasonically clean the n-Si(111) substrate, N 2 After drying, place it on the substrate frame in the chamber, when the background vacuum in the chamber reaches 3×10 -4 After Pa, Ar gas was introduced until the pressure reached 1.8 Pa, the substrate temperature was adjusted at 400°C, and the substrate bias was -800V, and the n-Si(111) substrate was glow-cleaned.
[0056] (2) After glow cleaning, adjust Ar and O 2 When the air pressure is 0.9Pa, turn on the oxygen feedback device to control O 2 The flow rate is 80sccm, the bias voltage is -200V, the temperature is 300°C, the substrate holder rotates at 4rpm, the ZnO DC magnetron sputtering target is turned on, and a 400 nm thick ZnO buffer layer is deposited.
[0057] (3) Passing Ar, N 2 and O 2 Gas and adjust the air pressure at 1....
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