Preparation method of topology insulator/ferromagnet heterostructure film

A topological insulator and heterostructure technology, applied in ion implantation plating, metal material coating process, coating, etc., can solve the problems of high energy consumption, high cost, expensive equipment, etc. Reduced requirements and good adhesion

Inactive Publication Date: 2015-12-02
SOUTHWEST JIAOTONG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

At present, a large number of thin film researches are based on molecular beam epitaxy (MBE) technology, which generates thin film materials by projecting atomic or molecular beams generated by thermal evaporation onto a clean substrate with a certain orientation and a cer...

Method used

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  • Preparation method of topology insulator/ferromagnet heterostructure film
  • Preparation method of topology insulator/ferromagnet heterostructure film
  • Preparation method of topology insulator/ferromagnet heterostructure film

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0030] A kind of preparation method of topological insulator / ferromagnet heterostructure film, its step is:

[0031] a. Preparation of La 0.7 Sr 0.3 MnO 3 Thin film: Dissolve lanthanum nitrate, strontium nitrate and manganese nitrate in N,N-dimethylformamide according to the proportion of lanthanum, strontium and manganese ions in the ratio of 7:3:10 to form La 0.7 Sr 0.3 MnO 3 solution; in La 0.7 Sr 0.3 MnO 3 The mass added to the solution is the La 0.7 Sr 0.3 MnO 3 3% polyvinylpyrrolidone K30 of the solution quality forms a colloid; then the colloid is spin-coated on lanthanum aluminate LaAlO 3 On the single crystal substrate, place it in an infrared drying oven to dry; place the dried substrate sheet in a tube furnace, heat it at 200°C for 8 minutes, slowly heat it to 520°C for 18 minutes, then hold it at 850°C for 1 hour, and anneal Processing, that is, La 0.7 Sr 0.3 MnO 3 film;

[0032] b. Deposition of Bi 2 Se 3 Thin film: the La prepared in step a 0.7 ...

Embodiment 2

[0040] A kind of preparation method of topological insulator / ferromagnet heterostructure film, its step is:

[0041] a. Preparation of La 0.7 Sr 0.3 MnO 3 Thin film: Dissolve lanthanum nitrate, strontium nitrate and manganese nitrate in N,N-dimethylformamide according to the proportion of lanthanum, strontium and manganese ions in the ratio of 7:3:10 to form La 0.7 Sr 0.3 MnO 3 solution; in La 0.7 Sr 0.3 MnO 3 The mass added to the solution is the La 0.7 Sr 0.3 MnO 3 5% polyvinylpyrrolidone K30 of the solution quality forms a colloid; then the colloid is spin-coated on lanthanum aluminate LaAlO 3 On the single crystal substrate, place it in an infrared drying oven to dry; place the dried substrate sheet in a tube furnace, heat it at 200°C for 8 minutes, slowly heat it to 520°C for 18 minutes, and hold it at 830°C for 1 hour, annealing , that is, La 0.7 Sr 0.3 MnO 3 film;

[0042] b. Deposition of Bi 2 Se 3 Thin film: the La prepared in step a 0.7 Sr 0.3 MnO ...

Embodiment 3

[0050] A kind of preparation method of topological insulator / ferromagnet heterostructure film, its step is:

[0051] a. Preparation of La 0.7 Sr 0.3 MnO 3 Thin film: Dissolve lanthanum nitrate, strontium nitrate and manganese nitrate in N,N-dimethylformamide according to the proportion of lanthanum, strontium and manganese ions in the ratio of 7:3:10 to form La 0.7 Sr 0.3 MnO 3 solution; in La 0.7 Sr 0.3 MnO 3 The mass added to the solution is the La 0.7 Sr 0.3 MnO 3 7% polyvinylpyrrolidone K30 of the solution quality forms a colloid; then the colloid is spin-coated on lanthanum aluminate LaAlO 3 On the single crystal substrate, dry in an infrared drying oven; place the dried substrate in a tube furnace, heat at 200°C for 12 minutes, slowly heat to 520°C for 22 minutes, hold at 850°C for 2 hours, and anneal , that is, La 0.7 Sr 0.3 MnO 3 film;

[0052] b. Deposition of Bi 2 Se 3 Thin film: the La prepared in step a 0.7Sr 0.3 MnO 3 The film is placed in a ma...

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Abstract

The invention discloses a preparation method of a topology insulator/ferromagnet heterostructure film. The preparation method comprises the following steps: (a) N, N-dimethylformamide solution of La0.7Sr0.3MnO3 is prepared; polyvinylpyrrolidone is added in the solution to form a colloid; and the colloid is coated on a substrate for drying, and is put in a tube furnace for insulation annealing treatment to obtain a La0.7Sr0.3MnO3 film; (b) the La0.7Sr0.3MnO3 film is put in a magnetron sputtering instrument; a Bi2Se3 film is deposited on the La0.7Sr0.3MnO3 film through a magnetron sputtering method to obtain a Bi2Se3/La0.7Sr0.3MnO3 heterostructure film; and (c) the Bi2Se3/La0.7Sr0.3MnO3 heterostructure film and selenium particles are sealed in a vacuum quartz tube for post-annealing treatment. The method is simple in operation and low in cost; and the prepared heterostructure film is excellent in performance.

Description

technical field [0001] The invention belongs to the technical field of preparation of topological insulator materials, in particular to topological insulator Bi 2 Se 3 The technical field of thin film preparation. Background technique [0002] topological insulator Bi 2 Se 3 Inside the bulk is an insulating state with a gap, while a gapless metallic state exists on the surface. This peculiar surface state is due to the strong spin coupling and is protected by time-reversal symmetry, so it is not easily affected by the external environment such as defects and non-magnetic impurities in the system. These characteristics make it have broad application prospects in future low-energy spintronic devices and quantum computers. However, to make full use of the characteristics of topological insulating structures and realize their key applications in low-energy spintronics and other fields, the prerequisite is to introduce ferromagnetic order while maintaining topological order ...

Claims

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Application Information

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IPC IPC(8): C23C14/35C23C14/06
Inventor 羊新胜蒲小艳金荣赵勇魏占涛张敏
Owner SOUTHWEST JIAOTONG UNIV
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