420 results about "Post annealing" patented technology

Methods for depositing on a surface of a substrate are disclosed. Exemplary methods include depositing a silicon oxide material using a cyclical deposition process, and reflowing the material during one or more of the step of depositing and a post-deposition anneal step. Structures including a layer of the material are also disclosed.

The invention relates to a low-temperature, high-intensity, high-toughness steel and the making method thereof, applicable to the environment down to -60 deg.C, adopting low-carbon Cr-Ni-Si-Mn-Mo-V alloy, and its chemical composition includes in mass percent (mass%): C: 0.16-0.24,Si:1.0-1.4, Mn:1.10-1.50,Cr:0.80-1.20,Ni:1.00- 1.40,Mo:0.20-0.40,V:0.05-0.20,S=<0.035,P=<0.035,Cu =<0.050, and the rest Fe. And its making method comprises: (1) smelting; (2) forging: heating at 1280-1320deg.C, where initial forging temperature: 1100-1250deg.C, final forging temperature >=850deg.C; annealing after forging, where heating temperature: 700+-30deg.C, and tapping temperature =<300deg.C; (3) thermal treatment: normalizing: air cooling at 930-950deg.C; tempering: air cooling at 790-720deg.C; quenching: oil cooling at 900-930deg.C; and tempering: air cooling at 200-260deg.C; (4) supersonic crack detection and magnetic particle crack detection. And it is especially applied to the materials for flying rings, hocks, pin shafts, etc, in the lifting systems of mechanical facilities.

The annealing process at 400° C. or more required for the wiring process for a phase change memory has posed the problem in that the crystal grains in a chalcogenide material grow in an oblique direction to cause voids in a storage layer. The voids, in turn, cause peeling due to a decrease in adhesion, variations in resistance due to improper contact with a plug, and other undesirable events. After the chalcogenide material has been formed in an amorphous phase, post-annealing is conducted to form a (111)-oriented and columnarly structured face-centered cubic. This is further followed by high-temperature annealing to form a columnar, hexagonal closest-packed crystal. Use of this procedure makes it possible to suppress the growth of inclined crystal grains that causes voids, since crystal grains are formed in a direction perpendicular to the surface of an associated substrate.

Certain example embodiments relate to methods of making oxide thin film transistor arrays (e.g., IGZO, amorphous or polycrystalline ZnO, ZnSnO, InZnO, and/or the like), and devices incorporating the same. Blanket layers of an optional barrier layer, semiconductor, gate insulator, and/or gate metal are disposed on a substrate. These and/or other layers may be deposited on a soda lime or borosilicate substrate via low or room temperature sputtering. These layers may be later patterned and/or further processed in making a TFT array according to certain example embodiments. In certain example embodiments, all or substantially all TFT processing may take place at a low temperature, e.g., at or below 150 degrees C., until a post-annealing activation step, and the post-anneal step may take place at a relatively low temperature (e.g., 200-250 degrees C.).

A method for making a current-perpendicular-to the-plane giant magnetoresistance (CPP-GMR) sensor with a Heusler alloy pinned layer on the sensor's Mn-containing antiferromagnetic pinning layer uses two annealing steps. A layer of a crystalline non-Heusler alloy ferromagnetic material, like Co or CoFe, is deposited on the antiferromagnetic pinning layer and a layer of an amorphous X-containing ferromagnetic alloy, like a CoFeBTa layer, is deposited on the Co or CoFe crystalline layer. After a first in-situ annealing of the amorphous X-containing ferromagnetic alloy, the Heusler alloy pinned layer is deposited on the amorphous X-containing ferromagnetic layer and a second high-temperature annealing step is performed to improve the microstructure of the Heusler alloy pinned layer.

The invention provides a wafer bonding method and a preparation method for a foreign substrate. The wafer bonding method at least comprises the following steps: S1) supplying a first wafer and a second wafer, wherein the first wafer is equipped with a first bonding surface, and the second wafer is equipped with a second bonding surface; S2) preheating before bonding the first wafer and the second wafer; and S3) bonding the first bonding surface of the first wafer with the second bonding surface of the second wafer. According to the scheme, the preheating before the bonding for the wafers is capable of effectively reducing the thermal strain of the foreign bonding structure in a high-temperature post-annealing process, so that the use scope of the foreign bonding can be widened and the reliability of a foreign integrated material can be promoted. Meanwhile, the problems of de-bonding and broken bonding structure caused by thermal strain of the foreign bonding structure in the high-temperature post-annealing process can be solved.

The present invention provides a semiconductor device in which the threshold voltage of NMOS and the threshold voltage of PMOS are independently controllable, and a method for fabricating the same. The method includes: forming a gate insulating film over an NMOS region and a PMOS region of a semiconductor substrate; forming a carbon-containing tungsten over the gate insulating film formed over one of the NMOS region and the PMOS region; forming a carbon-containing tungsten nitride over the gate insulating film formed over the other one of the PMOS region or the NMOS region; forming a tungsten film over the carbon-containing tungsten and the carbon-containing tungsten nitride; post-annealing the carbon-containing tungsten and the carbon-containing tungsten nitride; and etching the tungsten film, the carbon-containing tungsten, and the carbon-containing tungsten nitride, to form a gate electrode in the NMOS region and the PMOS region

A semiconductor device includes an epitaxial layer using a solid phase epitaxy (SPE) process; a first metal layer on the epitaxial layer; a nitride-based barrier metal layer on the first metal layer; a second metal layer on the barrier metal layer; and a metal silicide layer formed between the epitaxial layer and the first metal layer after a post-annealing process.

A laminated main pole layer is disclosed in which a non-AFC scheme is used to break the magnetic coupling between adjacent high moment layers and reduce remanence in a hard axis direction while maintaining a high magnetic moment and achieving low values for Hch, Hce, and Hk. An amorphous material layer with a thickness of 3 to 20 Angstroms and made of an oxide, nitride, or oxynitride of one or more of Hf, Zr, Ta, Al, Mg, Zn, or Si is inserted between adjacent high moment stacks. The laminated structure also includes an alignment layer below each high moment layer within each stack. In one embodiment, a Ru coupling layer is inserted between two high moment layers in each stack to introduce an AFC scheme. An uppermost Ru layer is used as a CMP stop layer. A post annealing process may be employed to further reduce the anisotropy field (Hk).

Plasma nitridation, in place of plasma oxidation, is used for the formation of a CCP layer. Al, Mg, Hf, etc. all form insulating nitrides under these conditions. Maintaining the structure at a temperature of at least 150° C. during plasma nitridation and/or performing post annealing at a temperature of 220° C. or higher, ensures that no copper nitride can form. Additionally, unintended oxidation by molecular oxygen of the exposed magnetic layers (mainly the pinned and free layers) is also avoided

The invention discloses a preparation method for growing an ABX3-type perovskite thin film through a single-step in-situ flash method. The preparation method is applied to the field of manufacturing processes for novel materials. The preparation method for the perovskite thin film comprises the following steps: taking the solution of a perovskite material as a single evaporation source; adding a heating device to a substrate; rapidly increasing a current to be not lower than 200A instantaneously under the condition that the temperature of the substrate of a sample is certain after a vacuum degree achieves a certain requirement, so that the temperature of an evaporation boat achieves a temperature of not lower than 1000 DEG C instantaneously, and the material is sublimated instantaneously; and finally directly carrying out post-annealing on the material in a vacuum cavity body to obtain the stable ABX3-type perovskite thin film. The perovskite thin film prepared by the preparation method disclosed by the invention through the single-step in-situ flash method is low in energy consumption, high in evaporation speed, short in time, void-free and uniform in large area, wide in substrate selection range, and suitable for a planar device.

The invention provides an inkjet printing preparation method of a thin film. The inkjet printing preparation method is characterized in that the appearance of the thin film prepared by inkjet printing is defined by a hydrophobic coffee-ring grid, and the appearance of the thin film includes at least one of thin film pattern, thin film size, thin film thickness or thin film morphology. The specific inkjet printing preparation method comprises the steps of: a, preparing the coffee-ring grid; b, and directly spraying ink droplets into units of the coffee-ring grid, and performing drying and post-annealing to obtain the solid-state thin film, wherein the coffee-ring grid is a hydrophobic polymer coffee-ring grid or is composed of a hydrophilic polymer layer at the lower layer and a hydrophobic polymer layer at the upper layer. The inkjet printing preparation method can be used for preparing inorganic or organic material thin films, the prepared thin films are used as a gate electrode layer, a dielectric layer, an active layer or a source/drain electrode of the thin film transistor. The inkjet printing preparation method effectively controls the droplet spreading in the inkjet printing, solves the coffee-ring problem of the prepared film layer, and can be applied to the large-area preparation of the thin film transistor devices.

A method is provided for in-situ formation of a thin oxidized AlN film on a substrate. The method includes providing the substrate in a process chamber, depositing an AlN film on the substrate, and post-treating the AlN film with exposure to a nitrogen and oxygen-containing gas. The post-treating increases the dielectric constant of the AlN film with substantially no increase in the AlN film thickness. The method can also include pre-treating the substrate prior to AlN deposition, post-annealing the AlN film before or after the post-treatment, or both.

The invention relates to alloy forged steel and a production method thereof. The production method comprises the following steps: alloy smelting, wherein the alloy comprises the following components by weight percent: 0.24 percent to 0.31 percent of carbon, 0.20 percent to 0.50 percent of silicon, 0.50 percent to 0.90 percent of manganese, 1.10 percent to 1.50 percent of chromium, 0.50 percent to 0.89 percent of molybdenum, 0.20 percent to 0.40 percent of vanadium, less than or equal to 0.015 percent of phosphorus, less than or equal to 0.012 percent of sulfur, the balance of iron and unavoidable impurities; pouring a steel ingot; diffusion annealing, warming the steel ingot, heat preservation, furnace cooling, and then drawing a charge and wind cooling; forging blank; annealing after forging, warming the blank, heat preservation, furnace cooling, and then drawing a charge and wind cooling; heat treatment, quenching and then tempering. The production method of the alloy forged steel is relatively simple, can produce the alloy forged steel with fine comprehensive mechanical property and higher coefficient of thermal conductivity in the ordinary temperature state and the high temperature state.

A method of manufacturing a ceramic includes forming a film which includes a complex oxide material having an oxygen octahedral structure and a paraelectric material having a catalytic effect for the complex oxide material in a mixed state, and performing a heat treatment to the film, wherein the paraelectric material is one of a layered catalytic substance which includes Si in the constituent elements and a layered catalytic substance which includes Si and Ge in the constituent elements. The heat treatment includes sintering and post-annealing. At least the post-annealing is performed in a pressurized atmosphere including at least one of oxygen and ozone. A ceramic is a complex oxide having an oxygen octahedral structure, and has Si and Ge in the oxygen octahedral structure.

The invention discloses high-carbon cold-rolled automobile diaphragm spring steel. The high-carbon cold-rolled automobile diaphragm spring steel is prepared from the following constituents in percentage by weight: 0.70-0.90% of C, 0.15-0.35% of Si, 0.50-1.00% of Mn, P smaller than or equal to 0.008%, S smaller than or equal to 0.002%, 0.010-0.030% of Alt, 0.10-0.30% of V, 1.20-2.00% of Cr, 1.20-2.00% of Ni, 0.002-0.006% of Ca, and N smaller than or equal to 0.004%, and is prepared by the following production steps: molten iron desulphurization, smelting in a converter, refining in an LF (Ladle Furnace) furnace, processing in a RH vacuum furnace, continuous casting to form blanks, pit type slow cooling after cutting of cast blanks, cast blank heating, segmented hot rolling, reeling, slow cooling, annealing after cutting, cold rolling, quenching, tempering, and inspection for standby. The steel disclosed by the invention is rolled and thermally treated to achieve high strength, high elasticity, high limit of yielding, high fatigue limit resistance, low-temperature toughness and longer service life, and can be used for manufacturing various vehicle clutch assemblies, especially the large engineering machinery at the low temperature environment.

In conventional Al coated steel sheet, with the Al coating as it is, black discoloration cannot be prevented at 550° C. or more. For this reason, post annealing is used to form a barrier layer and suppress the formation of Fe—Al intermetallic compounds. However, with this method, there were the problems that the steel sheet became poor in workability and, further, high temperature, long time heating was required, so there were problems from the workability, economy, and environmental aspect. The present invention provides steel sheet which has a heat black discoloration resistance even at a 550° C. or more high temperature without additional annealing after Al coating and further is excellent in workability.

That is, it is hot dip Al coated steel sheet which comprises steel sheet which contains predetermined ingredients of C, Si, P, S, Al, N, and O plus one or both of furthermore

Ni: 0.01 to 0.1% or

Cu: 0.01 to 0.1% and

satisfies 10×C+Ni+Cu>0.03 and an Al coating layer which contains Si: 4 to 11% on the surface of that steel sheet and which have a thickness 5 μm or less Al—Fe—Si alloy layer in the interface between the Al coating layer and the steel sheet.

Methods for improving electromigration of copper interconnection structures are provided. In one embodiment, a method of annealing a microelectronic device includings forming microelectronic features on a substrate, forming a contact structure over the microelectronic features, and forming a copper interconnection structure over the contact structure. A passivation layer is deposited over the copper interconnection structure and the substrate is subjected to a first anneal at a temperature of about 350° C. to 400° C. for a time duration between about 30 minutes to about 1 hour. The substrate is subjected to a second anneal at a temperature of about 150° C. to 300° C. for a time duration between about 24 to about 400 hours.

The invention relates to the technical field of laser cladding, and provides a laser cladding method, and a laser head, a laser and a cladding system for realizing the laser cladding method aiming atthe problems of deformation and performance degradation due to the fact that an existing method of laser cladding preheating on a machined workpiece base body cannot realize real-time online heat treatment and high heating input for preheating. The laser cladding method comprises the following steps that 1, outgoing lasers of the laser are divided into preheating lasers, cladding lasers and post-processing lasers; 2, the preheating lasers are irradiated on a workpiece to be processed, and the workpiece is preheated; 3, the cladding lasers are irradiated on the preheated workpiece to be processed to form a molten pool, and at the same time, alloy powder is blown into the molten pool formed on the surface of the workpiece to be processed; and 4, the post-processing lasers are irradiated on acladding layer after cladding, and post-annealing treatment is carried out on the cladding layer.

A method of fabricating a CMR thin film for use in a semiconductor device includes preparing a CMR precursor in the form of a metal acetate based acetic acid solution; preparing a wafer; placing a wafer in a spin-coating chamber; spin-coating and heating the wafer according to the following: injecting the CMR precursor into a spin-coating chamber and onto the surface of the wafer in the spin-coating chamber; accelerating the wafer to a spin speed of between about 1500 RPM to 3000 RPM for about 30 seconds; baking the wafer at a temperature of about 180° C. for about one minute; ramping the temperature to about 230° C.; baking the wafer for about one minute at the ramped temperature; annealing the wafer at about 500° C. for about five minutes; repeating said spin-coating and heating steps at least three times; post-annealing the wafer at between about 500° C. to 600° C. for between about one to six hours in dry, clean air; and completing the semiconductor device.