88 results about "Post annealing" patented technology

The invention discloses a sulfide solid electrolyte stable in wet air, a preparation method thereof and a battery, and belongs to the technical field of all-solid-state batteries, the sulfide solid electrolyte comprises the following raw materials in parts by weight: 20-100 parts of sulfide solid electrolyte and 1 part of metal halide component, the chemical formula of the sulfide solid electrolyte is Li < 6-x > PS < 5-x > Cl < 1 + x >, 0 < = x < = 0.6, the metal halide component comprises at least one metal halide, the chemical formula of the metal halide is MXn, n is greater than or equal to 2 and less than or equal to 4, M is one of Zr, Al, Zn, Sn, Sb and Bi, and X is one of F, Cl, Br and I. The metal halide and the sulfide solid electrolyte in a specific ratio are mixed, subjected to ball milling and then subjected to annealing treatment, and an in-situ doping coating layer is obtained on the surface of the sulfide solid electrolyte; and under the condition that the ionic conductivity of the sulfide solid electrolyte is slightly influenced, the wet air stability of the sulfide solid electrolyte is effectively improved.

Provided is a non-oriented electrical steel sheet that is excellent in iron loss and magnetic anisotropy under high magnetic flux and high frequency conditions, and a method for manufacturing the same. [Solution] A method for producing a grain-oriented electrical steel sheet includes the steps of heating a slab containing, by weight, 1.5 to 6.5% Si, 0.0005 to 3.5% Al, 0.01 to 3.0% Mn, 0.005 to 5.0% Cr, 0.0005 to 0.03% S, the balance being Fe and other unavoidable impurities, at 1050 to 1220°C, finish hot rolling the slab to obtain a hot-rolled sheet, hot-rolling the hot-rolled sheet at 850 to 1150°C for 30 to 300 seconds, cold-rolling the hot-rolled sheet that has been annealed to obtain a cold-rolled sheet, heating the cold-rolled sheet, and rolling the heated cold-rolled sheet. and final annealing at 600 to 1150°C for 10 to 300 seconds, wherein the cold rolling satisfies the following [Relationship 2], wherein the heating rate in the temperature range of 300 to 500°C during heating is 5 to 150°C / s, and the gas atmosphere in the temperature range of 500 to 750°C during the final annealing is composed of, by volume, 15 to 99.99% hydrogen, 0.0001 to 0.0030% oxygen, and the balance being an inert gas, and the oxygen content in the gas atmosphere in the temperature range of 800 to 1100°C during the final annealing is 1 to 1.5 times that in the temperature range of 500 to 750°C. [Relationship 2] Maximum temperature of cold-rolled sheet surface during cold rolling < 200 × cold rolling reduction / 100 + 40

This invention relates to the fields of semiconductor information storage and artificial synaptic devices, specifically to a biological synaptic intrinsically self-assembled topological phase-change memristor and its fabrication method. The fabrication method includes: providing a substrate; depositing a bottom electrode; and depositing SrFeO on the bottom electrode. x The thin film serves as the storage medium layer; the storage medium layer undergoes heat treatment, including in-situ annealing and post-annealing. By controlling the oxygen pressure difference between in-situ and post-annealing, the single-component SrFeO is made more efficient. x An intrinsically self-assembled superlattice structure, characterized by alternating vertical and horizontal orientation regions of oxygen vacancy channels, spontaneously forms within the thin film. This structure restricts the formation sites of conductive filaments, significantly improving the consistency and stability of the device's resistive switching cycle. The process of this invention is simple, requiring no introduction of a second-phase material. The resulting memristor requires no electrical formation, exhibits a high on / off ratio, multi-level storage, and short-term synaptic plasticity, making it applicable to neuromorphic computing chips and artificial intelligence devices.

The invention relates to the technical field of metal material surface chemical heat treatment, in particular to W-containing ultrahigh-strength steel, a preparation method thereof and a surface carbon-nitrogen composite strengthening process. The preparation method comprises the following steps of smelting preparation of steel, forging cogging forming, annealing heat treatment after forging of a bar, carburization, subzero treatment and surface pressurization nitriding. The ultrahigh strength steel comprises the following chemical components: 0.27-0.34 wt.% of C; 0.4 to 1.4 wt.% of Cr; 9 to 10 wt.% of Ni; 6 to 8 wt.% of Co; 1.5 to 2.5 wt.% of Mo; 1.1 to 1.6 wt.% of W; and the balance of Fe and impurity elements. The highest hardness of the carbonitriding layer of the W-containing ultrahigh-strength steel is not lower than 900 HV, the tensile strength of the steel is not lower than 2000 MPa, the yield strength is not lower than 1700 MPa, the impact absorption capacity is not lower than 60 J, and the service condition requirements of gears for aero-engines are met.

The invention discloses a P-type thin film transistor and a preparation method thereof, and belongs to the field of integrated circuit micro-nano electronic devices. According to the invention, a germanium / aluminum film periodic alternating laminated structure is used as an active layer, and crystallization is promoted through a post-annealing process, so that the characteristics of the P-type transistor are realized. The prepared thin film transistor is excellent in performance, has practical application potential, is simple in process flow and low in cost, can be compatible with an existing oxide transistor platform, is expected to realize a thin film transistor CMOS circuit cooperatively integrated with an oxide device, and is of great significance to sustainable development and industrial upgrading in the field of integrated circuits.

The invention discloses a high-strength and high-elongation lining spring wire and a processing method thereof, and the processing method comprises the following steps: carrying out one-time continuous cold rolling on an SUS304 stainless steel raw wire, annealing, and cooling to obtain the high-strength and high-elongation lining spring wire. According to the method, the SUS304 stainless steel raw wire is subjected to annealing treatment after being subjected to one-time continuous cold rolling, original rolling state delivery of the lining spring wire is overturned, the tensile strength and the ductility are improved through optimization and innovation of process design and delivery in a state after heat treatment, and the method is suitable for production and machining of large-specification high-elasticity lining springs; cost waste caused by repeated rolling and solid solution is avoided, and the machining cost is saved.

This invention relates to the field of new energy vehicle power battery manufacturing technology, specifically a fully automated laser welding and packaging process for lithium iron phosphate battery cells used in new energy vehicles. The process includes: S1. The cell shell is made of 6061 aluminum alloy containing niobium, yttrium, and lanthanum, sandblasted, then ultrasonically cleaned with an ethanol solution containing a silane coupling agent, and dried at 85-95℃; S2. The cover plate is made of 304 stainless steel containing 0.15-0.25wt% zirconium and 0.06-0.08wt% cerium, and the sealing groove is pre-cured with modified polyimide adhesive and then butt-fitted to the shell; S3. The weld seam is pre-coated with a nano-coating containing 0.1-0.3wt% titanium hydride, pulsed welded using a 1064nm fiber laser, and protected with a mixture of argon, helium, and nitrogen gas; S4. Post-weld annealing, ultrasonic treatment by immersion in a titanate aqueous solution, and finally vacuum drying. This process optimizes the shell and cover plate materials, resulting in stable welding quality, high weld strength, good corrosion resistance, improved cell sealing performance and long-term reliability, fully automated operation, and excellent production efficiency and product consistency.

The invention discloses a preparation method of a semiconductor device, and relates to the technical field of semiconductor manufacturing. The preparation method comprises the steps that a first wafer bonding piece and a second wafer bonding piece are pre-cleaned respectively, pre-cleaning comprises megasonic assisted SC1 cleaning, and supercritical CO2 drying treatment is carried out on the pre-cleaned first wafer bonding piece and the pre-cleaned second wafer bonding piece respectively to remove moisture of the first wafer bonding piece and the second wafer bonding piece; performing surface activation on the first wafer bonding sheet and the second wafer bonding sheet; and bonding and connecting the first wafer bonding sheet and the second wafer bonding sheet in a silicon-oxygen bonding mode to prepare the semiconductor device. According to the preparation method, the cleaning effect can be improved, the surface roughness can be improved, the water remaining in the hole cavity structure after cleaning can be effectively removed, and the situation that the yield of the semiconductor device is reduced due to the fact that excessive water forms steam bubbles during annealing after bonding is prevented.

This invention provides a 5-series aluminum alloy sheet and its preparation method, relating to the field of aluminum alloy technology. The preparation method includes: S1, mixing the metal raw materials of the 5-series aluminum alloy sheet according to a specified ratio and sequentially melting and casting to obtain an aluminum alloy ingot; S2, sequentially subjecting the aluminum alloy ingot to homogenization treatment, hot rolling treatment, first cold rolling treatment, intermediate annealing, and second cold rolling treatment to obtain a cold-rolled sheet; S3, sequentially subjecting the cold-rolled sheet to final annealing, cooling treatment, and straightening treatment to obtain the 5-series aluminum alloy sheet; wherein the Fe element content in the 5-series aluminum alloy sheet is not less than 0.25% by mass, the final annealing temperature is 520~550℃, the final annealing holding time is 10~60s, the final annealing heating rate is 5~15℃ / s, and the cooling rate of the cooling treatment is 8~16℃ / s. The prepared 5-series aluminum alloy sheet exhibits excellent mechanical properties, formability, and surface quality.

METHOD FOR MANUFACTURING A COATED STEEL SHEET, GALVANIZED STEEL STRIP, GALVANIZED STEEL STRIP, SPOT-WELDED JOINT OF AT LEAST TWO METAL SHEETS AND USE OF A COATED STEEL SHEET. The present invention relates to a method for manufacturing a steel strip, a steel strip with controlled decarburization depth, a spot-welded joint and the use of said steel strip or said spot-welded joint. This invention is particularly suitable for the automotive industry due to the improved resistance to liquid metal embrittlement (LME) along with the target mechanical properties.

The application provides a preparation method of bronze etching material, which comprises the following steps: preparing a bronze etching blank, homogenizing annealing the bronze etching blank to obtain a bronze etching blank for use; roughing the bronze etching blank for use, rolling the roughed bronze etching blank to a first predetermined thickness and cutting edges, and then annealing to obtain a first blank; first finish rolling and first tempering the first blank to obtain a second blank; second finish rolling and second tempering the second blank to obtain a third blank, and the processing rate of the second finish rolling is 30%-35%; third finish rolling and third tempering the third blank to obtain a fourth blank, and the processing rate of the third finish rolling is 10.0-12.5%; fourth finish rolling and fourth tempering the fourth blank to obtain a first finished product, and the processing rate of the fourth finish rolling is 10.0-15.5%; and cleaning and passivating the first finished product to obtain bronze etching strip material. The preparation method of the bronze etching material can realize rapid forming of the bronze etching material and industrialized mass production.

The application discloses a preparation method of a hybrid seed layer assisted growth perovskite film and a perovskite-crystalline silicon laminated solar cell, and belongs to the technical field of solar cells. The perovskite film preparation method provided by the application comprises the following steps: (1) wetly depositing a hybrid seed layer solution on the surface of a substrate, and cooling after heat treatment to obtain a hybrid seed layer; and (2) dryly depositing an inorganic metal salt on the surface of the hybrid seed layer to form an inorganic metal salt layer, and then performing annealing treatment to obtain a perovskite film. The hybrid seed layer has the functions of crystal nucleus induction activity and interface regulation, a stable solid-solid reaction interface is constructed between the substrate and the precursor layer through a low-temperature liquid phase pre-deposition process, and bidirectional interface passivation, crystallization orientation regulation and energy level optimization are simultaneously realized, so that the photoelectric conversion efficiency and long-term operation stability of the laminated cell are significantly improved, and excellent batch preparation repeatability is achieved.

A nanoimprint DMD fabrication method for wide-viewing-angle double-sided OLED displays belongs to the field of organic light-emitting diodes. The method involves fabricating a photoresist grating structure; spin-coating a PDMS mixture onto a photoresist, applying pressure, and annealing to obtain a PDMS template with a grating structure; fabricating a hole injection / transport layer on a pre-prepared ITO glass substrate, followed by the fabrication of an emissive layer; evaporating an electron transport layer (TmPyPB); and after cooling, imprinting with the PDMS template to obtain a TmPyPB layer with a grating structure. The grating structure has a period of 430±5 nm and a height of 40±5 nm. Evaporating an electron injection layer (LiF), a cathode (Al+Ag), and an outermost cladding layer (HATCN) yields the wide-viewing-angle double-sided OLED. This method improves transmittance and overall brightness, exhibits near-zero haze high transmittance, a Lambertian-like radiation distribution, and excellent color stability at viewing angles greater than 110°.

The invention discloses a method for welding a wear-resistant element on a wear-resistant belt of a drilling tool stabilizer and the drilling tool stabilizer, and the method comprises the following steps: S1, manufacturing the wear-resistant element; s2, a drilling tool stabilizer is prepared, a hole is drilled in a wear-resistant belt of the drilling tool stabilizer, mounting holes distributed in an array mode are formed, and at least part of the structure of each wear-resistant element is embedded into each drilled mounting hole; s3, at least welding and filling the gap between the mounting hole and the wear-resistant element with transition type alloy powder; s4, welding and filling the wear-resistant belt with enhanced alloy powder, and covering the transition type alloy powder and the whole wear-resistant belt; and S5, after the wear-resistant belt is heated, heat preservation is conducted, then annealing cooling is conducted, so that the wear resistance and firmness of the wear-resistant element can be improved, and the service life of the wear-resistant element is prolonged.

The application relates to the alloy processing technical field, in particular to a large-specification Ti2AlNb alloy sheet and a preparation method thereof. The preparation method comprises the following steps: (a) carrying out one-pass rolling on a Ti2AlNb alloy slab along the width and length directions respectively at 1050-1100 DEG C to obtain an intermediate slab; and carrying out annealing treatment on the intermediate slab at 1000-1045 DEG C; (b) carrying out one-pass rolling on the annealed intermediate slab along the width and length directions respectively at 850-980 DEG C, carrying out cladding rolling along the length direction, and then carrying out annealing treatment at 800-950 DEG C. The application sequentially carries out high-temperature reversing rolling, intermediate annealing, low-temperature reversing rolling and post-rolling annealing, controls the transverse and longitudinal deformation amounts of the high-temperature reversing rolling and the low-temperature reversing rolling, guarantees the mechanical properties of the sheet and reduces the transverse and longitudinal performance difference of the sheet.

The invention relates to a high-aluminum steel smelting and continuous casting process adopting EBT electric arc furnace smelting, LF furnace refining, VD vacuum treatment and CC continuous casting, raw materials comprise pig iron, CrMo steel cuttings, carbon cuttings, high manganese, high chromium, ferromolybdenum, ferrosilicon and aluminum blocks, tapping is carried out after C and P in an electric arc furnace are removed to target values, the aluminum blocks are added into a steel ladle before tapping, the Al content is adjusted in advance, LF furnace deoxidation and alloying treatment are carried out, and the high-aluminum steel is obtained. The temperature is measured after vacuum breaking, sampling is conducted, the weak stirring time is larger than or equal to 15 min after calcium lines are fed, the VD station is switched to the CC station, a water gap of a large ladle is sealed through a long water gap, an overall submersed water gap is adopted for a tundish, molten steel in the tundish is subjected to heat preservation through a carbon-free covering agent and double-layer rice hulls, and an argon blowing stopper rod is adopted for the tundish; annealing treatment is carried out after a continuous casting billet is discharged, the method is suitable for smelting high-aluminum steel through a 60t EBT electric arc furnace, a 60t LF furnace and VOD / VD, and the problem that the Al content is unqualified after VD is solved; ca treatment prevents continuous casting flocculation flow; the molten steel utilization rate is improved through continuous casting production.

The invention relates to the technical field of preparation of magnetoelectric materials, and provides an organic-inorganic layered magnetoelectric composite material and a preparation method thereof, and the preparation method of the composite material comprises the following steps: S1, uniformly mixing dimethylformamide, barium titanate and P (VDF-HFP) to obtain a mixed slurry; s2, carrying out tape casting on the mixed slurry on the surface of a frosted plate by adopting a tape casting method, and drying to obtain a P (VDF-HFP) / BaTiO3 composite film; and S3, the dried composite film is quenched and then dried, nickel is sputtered on one face of the composite film, nickel or copper is sputtered on the opposite face of the composite film, and then annealing is conducted to obtain the organic-inorganic layered magnetoelectric composite material. The composite film provided by the invention has excellent electrical performance, magnetic performance and magnetoelectric coupling performance; when a magnetic field perpendicular to the electric signal output direction is applied, the magnetoelectric coupling performance can be enhanced through interface normal stress transfer, and a new thought is provided for preparation of high-performance functional devices.

The application discloses a kind of super-thick invar alloy plate of uniform organization and manufacturing method thereof, 6-9t invar alloy steel ingot is prepared by electric furnace→AOD refining→LF refining→VD refining→IC die casting process;Nb element is added in AOD refining process;After that, invar alloy steel ingot carries out stress relief annealing, and adopts three times upsetting and drawing process, upsetting reduction is according to the principle of increment, gradually refines steel ingot surface and heart grain structure, ensures that steel ingot internal organization is fully broken after recrystallization, then forged to target size after annealing, obtains invar alloy plate of thickness ≥50mm after air cooling;The application can prevent the grain coarsening of the heart of super-thick invar alloy plate with thickness greater than 50mm, and obtain super-thick invar alloy plate with grain size ≥4 levels and uniform organization.

The invention discloses a large-size hemispherical glass cover for a space station and a preparation method of the large-size hemispherical glass cover, and belongs to the technical field of glass. The hemispherical glass cover is prepared from the following components in percentage by weight: 65 to 75 percent of SiO2, 6 to 10 percent of B2O3, 3 to 6 percent of Al2O3, 2 to 5 percent of K2O, 0.5 to 2 percent of Bi2O3, 1 to 4 percent of ZrO2, 0.2 to 1 percent of Li2O and 6 to 12 percent of Y2O3. The preparation method comprises the following steps: putting the raw materials and zirconium balls into a mixing device, uniformly mixing, melting and clarifying in a vacuum high-temperature furnace, quickly pouring molten glass into a hemispherical mold, carrying out ball press molding, optimizing the inner and outer surfaces of a molded object by using flame, annealing, cooling, polishing and grinding to obtain the hemispherical glass cover. The hemispherical glass cover prepared by the invention can keep high visible light transmittance in a space environment, has excellent thermal shock resistance and compressive strength, has certain radiation resistance, and provides key material support for major engineering of spaceflight.

The application discloses a mold for preparing high-porosity spherical porous titanium alloy, which comprises an upper mold punch and a lower mold punch provided with upper half-sphere grooves and lower half-sphere grooves; the upper half-sphere grooves are communicated with each other through upper mold flow channels; and the upper mold punch is further provided with a feeding flow channel. In addition, the application further discloses a preparation method of the high-porosity spherical porous titanium alloy. After titanium powder and other metal element powders are mixed and annealed, the titanium powder is mixed with a binder, and then a spherical blank is prepared by using injection molding equipment and the mold; the spherical blank is subjected to degreasing, sintering and gas suspension smelting in sequence to obtain the high-porosity spherical porous titanium alloy. The porous titanium alloy prepared by the application has high sphericity, smooth surface and relatively dense spherical wall, and the porosity can be controlled according to application conditions, so that the application demands in different fields are met. In addition, the application uses element powder in-situ alloying to prepare the spherical porous titanium alloy, the alloy composition can be freely designed, and batch production can be easily realized.

The invention relates to a perovskite crystalline silicon laminated cell, a bottom cell and a preparation method, and the method comprises the steps: obtaining a textured semiconductor substrate layer, and carrying out the boron diffusion of a first surface of the semiconductor substrate layer, and generating a boron-doped layer; carrying out winding plating removal and polishing on the second surface of the semiconductor substrate layer, carrying out secondary texturing to form a textured surface, carrying out deposition in sequence to generate a tunneling oxide layer and an intrinsic polycrystalline silicon layer, and carrying out phosphorus diffusion on the intrinsic polycrystalline silicon layer to obtain an N-type polycrystalline silicon layer; depositing a passivation film layer on the boron-doped layer, carrying out passivation treatment, printing silver paste on the passivation film layer, and carrying out sintering to generate a metal electrode; the transparent conductive layer is generated on the N-type polycrystalline silicon layer, and annealing is carried out after auxiliary sintering is carried out by adopting an LECO technology, so that the open voltage of the bottom cell can be improved, and the conversion efficiency of the cell is improved.

The invention relates to a preparation process of high-durability toughened glass with an anti-fingerprint function, which comprises the following steps: inserting glass into a toughened frame, and ultrasonically cleaning the glass; putting the tempering frame into a tempering cage and preheating, transferring the tempering cage to a tempering furnace for tempering after preheating, annealing after tempering the glass, transferring into a clear water tank for water decomposition treatment, and then carrying out ultrasonic cleaning to obtain tempered glass; after the tempered glass is preheated, the tempering cage is moved to a secondary tempering furnace to be tempered, annealing is conducted after tempering, the tempered glass is transferred into a clear water tank to be subjected to water decomposition treatment, and then ultrasonic cleaning is conducted to obtain secondary tempered glass; the formula of the secondary tempering molten salt comprises 88 wt%-94 wt% of potassium nitrate, 5 wt%-10 wt% of sodium nitrate, 0.8 wt%-1.5 wt% of fluoropolyether trimethoxy silane and 0.3 wt%-2.0 wt% of sodium hydrogen sulfate. According to the invention, fluoropolyether trimethoxysilane is introduced into a secondary tempering molten salt formula, and is chemically bonded with the glass surface to form a silicon-oxygen covalent bond, so that the hydrophobic and oleophobic properties and fingerprint adhesion resistance of the glass surface are enhanced, the weather resistance and durability of an anti-fingerprint layer are improved, and the synchronous improvement of the anti-fingerprint function and high durability is realized.

This invention discloses a method for fabricating a conical microporous semi-transparent crystalline silicon photovoltaic cell, relating to the field of photovoltaic cells. The method includes the following steps: silicon wafer cleaning and preparation, photolithography to define the micropore pattern, deep reactive ion etching to prepare vertical micropores, micropore tapering treatment, diffusion doping to form a PN junction, alumina passivation layer deposition, post-annealing treatment, silicon nitride antireflection layer deposition, double-sided microgrid electrode fabrication, Low-E film deposition, and module encapsulation. This invention also discloses a conical microporous semi-transparent crystalline silicon photovoltaic cell fabricated using the above method. Through the synergistic design of the conical micropore structure and the selective Low-E film, this invention significantly expands the effective light transmission angle range of incident light without sacrificing the light absorption area, enabling the module to maintain stable light uniformity under different solar illumination angles. This significantly improves the utilization rate of the near-infrared band, reduces the air conditioning cooling load, and achieves a balance between power generation performance and building insulation function.

A method for fabricating a magnetic material with tunable magnetic properties, comprising the reactive sputtering of a Mn3N2 seed layer onto a substrate, annealing at a first temperature, depositing a Mn layer onto the Mn3N2 seed layer, cooling to a second lower temperature, and applying a capping layer to complete the magnetic material. The resulting structure includes a Si substrate with one or more MnNx layer(s) with tunable nitrogen contents, and a capping layer, exhibiting adjustable magnetic properties such as exchange bias. A single Mn4N layer can be formed with this method, so can multilayers of Mn3N2 / Mn2N / Mn4N, or Mn2N / Mn4N, or other variations. Nitrogen partial pressure during deposition enables control of exchange bias by over an order of magnitude, while post-annealing reduces the bias by up to 70% through nitrogen migration into a neighboring tantalum layer. Voltage conditioning further tunes magnetic properties by driving nitrogen ions out of the Mn nitride layer, yielding an increased saturation magnetization and decreased exchange bias.

To provide a method for depositing a positive photoresist using a dry deposition and oxidation process.SOLUTION: A method of forming a photoresist layer on a substrate in a vacuum chamber includes providing a metal precursor vapor in the vacuum chamber. The method further comprises providing an oxidant vapor in the vacuum chamber, wherein a reaction between the metal precursor vapor and the oxidant vapor results in the formation of a positive photoresist layer on the surface of the substrate. The positive photoresist layer is a metal oxo-containing material. The method further comprises performing a post-annealing treatment of the metal oxo-containing material in an oxygen-containing environment.SELECTED DRAWING: Figure 1

The invention relates to a hole transport layer, a perovskite solar cell and a preparation method, and the method sequentially comprises the following steps: providing a substrate, and preparing a composite hole transport layer on the substrate; depositing an inorganic salt thin film on the composite hole transport layer by adopting a vacuum evaporation method; spin-coating an organic salt solution on the inorganic salt thin film, and then annealing to form a perovskite light absorption layer; preparing a passivation layer on the perovskite light absorption layer; and preparing an electron transport layer, a hole blocking layer and a back electrode in sequence to complete cell preparation. According to the invention, by introducing a'common SAMs' technology (that is, 3, 5-bis (trifluoromethyl) phenylhydrazine hydrochloride is doped into Me-4PACz), the surface property of the hole transport layer is fundamentally improved, and the interface property and the crystallization quality of the thin film are optimized.

The invention belongs to the technical field of metal material hot working, and particularly discloses a hot working method for improving the mechanical property of a 07X16H6-III precipitation hardening stainless steel compressor wheel disc forging.The hot working method comprises the steps that raw materials are smelted to obtain an original blank; heating the original blank through a heating furnace, and forging for multiple times through an oil press to obtain a blank product; the blank product is sequentially subjected to annealing pre-heat treatment after forging and rough machining to obtain a rough machining product, and after the rough machining product is qualified through ultrasonic flaw detection, the rough machining product is subjected to semi-finish machining to obtain a semi-finish machining product; performing performance heat treatment on the semi-finished product, and then performing finish machining to obtain a final product; by means of the optimized smelting method, the multi-stage forging process and the accurately-controlled heat treatment system, the problems that in a traditional process, temperature control precision is insufficient, the structure is uneven, and the mechanical property does not reach the standard are solved, and the method has the advantages that the mechanical property of the forge piece is remarkably improved, the structure uniformity is improved, and the ultrasonic flaw detection yield is increased.

The present invention discloses a design method and a design device for the transverse temperature distribution during mold annealing with increasing drawing speed, and relates to the field of glass substrate manufacturing technology. The design method provided by the present invention is based on the six physical flow properties of the glass in the overflow mold annealing zone, wherein the mold annealing process of the glass substrate is divided into an overflow zone, a thickness forming zone, a pre-annealing zone, a heat equalization zone, an annealing zone, and a post-annealing zone. Simultaneously, differentiated strategies for the transverse temperature distribution in different annealing zones are employed, thereby enabling precise control of the transverse temperature distribution during annealing for glass forming.By applying the framework of "temperature gradient - structural variation - thermal stress" to thoroughly analyze the mechanisms occurring during glass tempering, a more scientific and rational approach is developed for determining the degree of deformation and surface curvature after glass tempering and cooling to room temperature. This method is particularly suitable for shaping the temperature distribution within the tempering zone of the glass substrate, which is characterized by high drawing speed, large format width, and thin profile.

The invention belongs to the technical field of micro-nano photoelectronic device preparation, and particularly relates to a preparation method for controlling the boundary of a printed electrode to be neat, which comprises the following steps: S1, spin-coating an IGZO precursor solution on a SiO2 / Si substrate after plasma treatment, and preparing the SiO2 / Si substrate with an IGZO active layer in a manner of annealing after hot drying; s2, photoresist is spin-coated on the substrate, and the substrate is placed on a 90-DEG C heating plate for curing treatment; s3, putting the cured substrate into a photoetching machine, carrying out light etching treatment by adopting a mask plate, and then corroding the deteriorated photoresist by using sodium hydroxide; s4, printing a silver electrode on the exposed active layer by adopting an ink-jet printing instrument; and S5, corroding the non-deteriorated photoresist on the substrate printed with the silver electrode by using acetone. Through the method, the boundary of the printed electrode is neat, the electrical performance of the device is improved, the process is simplified, the cost is reduced, and the requirements of a printed display device are met.