195 results about "Post annealing" patented technology

The invention relates to the technical field of aluminum foil processing, in particular to a method for producing high-stability 3102 alloy air-conditioning foil in a short process, which comprises the following steps of: smelting, continuously casting and continuously rolling an aluminum alloy raw material to obtain a strip, directly trimming the strip, rolling the strip on a cold rolling unit, preparing a cold-rolled coil with the thickness of 0.15-0.2 mm after three-pass rolling, rolling the cold-rolled coil by an aluminum foil rolling mill, and rolling the cold-rolled coil by an aluminum foil rolling mill to obtain the high-stability 3102 alloy air-conditioning foil. The tensile strength of the aluminum foil finished product is 135-139 Mpa, the ductility is larger than or equal to 19%, and the cupping is larger than or equal to 5.9 mm. The aluminum foil finished product is suitable in tensile strength, small in fluctuation range, higher in ductility and cupping value, capable of better meeting the use requirements of air conditioner foil, capable of guaranteeing the product quality and meanwhile capable of improving the product quality. According to the method, the production process is greatly shortened, the production cost is reduced, and the production efficiency is improved.

The invention discloses a sulfide solid electrolyte stable in wet air, a preparation method thereof and a battery, and belongs to the technical field of all-solid-state batteries, the sulfide solid electrolyte comprises the following raw materials in parts by weight: 20-100 parts of sulfide solid electrolyte and 1 part of metal halide component, the chemical formula of the sulfide solid electrolyte is Li < 6-x > PS < 5-x > Cl < 1 + x >, 0 < = x < = 0.6, the metal halide component comprises at least one metal halide, the chemical formula of the metal halide is MXn, n is greater than or equal to 2 and less than or equal to 4, M is one of Zr, Al, Zn, Sn, Sb and Bi, and X is one of F, Cl, Br and I. The metal halide and the sulfide solid electrolyte in a specific ratio are mixed, subjected to ball milling and then subjected to annealing treatment, and an in-situ doping coating layer is obtained on the surface of the sulfide solid electrolyte; and under the condition that the ionic conductivity of the sulfide solid electrolyte is slightly influenced, the wet air stability of the sulfide solid electrolyte is effectively improved.

The invention discloses a double-metal gradient diffusion layer modified high-nickel ternary positive electrode material and a preparation method thereof. The preparation method comprises the following steps: filtering and uniformly dispersing high-nickel ternary positive electrode material powder; introducing inert gas into the atomic layer deposition system, and raising the temperature to a target temperature; respectively preheating the metal precursors A and B to proper temperatures; the preparation method comprises the following steps: sequentially introducing a metal precursor A, precursor water, a metal precursor B and precursor water into a reaction chamber, alternately depositing according to a pulse-reaction-purging sequence, and repeatedly circulating the process to obtain the bimetallic oxide coated high-nickel ternary positive electrode material, and post-annealing treatment. According to the bimetal gradient diffusion layer modified high-nickel ternary positive electrode material prepared by the preparation method disclosed by the invention, the lithium storage performance of the high-nickel ternary material is greatly improved, excellent cycling stability and rate capability are obtained, the coating layer is accurate and controllable, the preparation process is simple, meanwhile, large-batch production can be realized, and relatively high application value is achieved.

The invention relates to a high-quality indium gallium zinc oxide thin film transistor and a preparation method thereof. The preparation method comprises the following steps: S1, growing a dielectric layer on a substrate by adopting a radio frequency magnetron sputtering method; s2, in radio frequency magnetron sputtering equipment, the substrate with the dielectric layer growing on the surface is heated to 200-250 DEG C, and a semiconductor layer indium gallium zinc oxide thin film grows on the dielectric layer through magnetron sputtering; s3, carrying out post-annealing treatment on the indium gallium zinc oxide thin film at the temperature of 300 to 350 DEG C for 40 to 80 minutes; and S4, growing a titanium adsorption layer on the upper surface of the high-quality indium gallium zinc oxide thin film, and preparing a source electrode and a drain electrode on the surface of the titanium adsorption layer to obtain the high-quality indium gallium zinc oxide thin film transistor. According to the preparation method of the high-quality indium gallium zinc oxide thin film transistor, the quality of the indium gallium zinc oxide thin film can be greatly improved, and the device stability and the manufacturing yield are improved.

The invention discloses a CO2 laser and ultrafast laser hybrid welding system and method and a welded quartz glass optical element. The method comprises the steps that S1, at least two to-be-welded materials are clamped so that to-be-welded interfaces can make close contact; s2, ultrafast laser is adopted to conduct instantaneous heating and melting on the local area of the interface to be welded in the action area of the low-flux CO2 laser, and meanwhile auxiliary heat is provided by the low-flux CO2 laser; s3, after ultrafast laser local welding is completed, low-flux CO2 laser is adopted for continuing heating in the action area; s4, the position of the to-be-welded material is adjusted, and the to-be-welded interface which is not welded enters the action area; the steps S2-S3 are repeated until all the to-be-welded interfaces are welded and annealed; and S5, the welding area is naturally cooled, and composite welding is completed. By applying double laser, the temperature gradient is remarkably reduced, and thermal deformation is reduced; and CO2 laser post-welding annealing is carried out, so that the interface stress is effectively eliminated.

The invention provides a preparation method of a doped polycrystalline silicon layer and a preparation method and application of a TBC battery, and relates to the technical field of solar cells, and the preparation method comprises the following steps: depositing the doped polycrystalline silicon layer on a tunneling oxide layer, and then annealing; wherein deposition of the doped polycrystalline silicon layer and annealing serve as one procedure, the process of preparing the doped polycrystalline silicon layer comprises at least two procedures, the annealing temperature in each procedure is lower than the deposition temperature, and the deposition temperatures in the adjacent procedures are decreased progressively. And the cell conversion efficiency is improved.

The invention discloses a composite fluorine removal agent and a preparation method thereof, and belongs to the technical field of water treatment. The preparation method of the composite fluorine removal agent comprises the following steps: dipping biomass charcoal in a lanthanum-containing solution, and calcining to obtain a La2O3 / charcoal carrier; the La2O3 / carbon carrier, nano-hydroxyapatite, MgO and magnetic Fe3O4 particles are mixed and then subjected to heat treatment, and a composite material is obtained; mixing the composite material, tetraethoxysilane and a solvent, dropwise adding ammonia water into the mixture for catalytic hydrolysis, and then annealing to obtain a SiO2-coated composite material; and mixing and granulating the SiO2 coated composite material and a binder, and then activating to obtain the composite fluorine removal agent. The method realizes the preparation of the composite fluorine removal agent which is wide in pH application range, can be recycled and can be suitable for efficient treatment of low-concentration fluorine wastewater.

The invention discloses a PEDOT: PSS / n-Si solar cell with a MoOx multifunctional interface layer and a preparation method of the PEDOT: PSS / n-Si solar cell. Comprising the following steps: (1) preparing a photovoltaic device by adopting a monocrystalline silicon wafer; (2) adding DMSO and a surfactant Triton X-100 into the PEDOT: PSS aqueous solution, and carrying out magnetic stirring to prepare a precursor solution; (3) removing surface oxides from the n-type silicon wafer by using an HF solution; then, deionized water is used for cleaning the HF acid solution left on the silicon wafer, and finally nitrogen is used for purging and drying the silicon wafer; (4) spin-coating the PEDOT: PSS precursor solution prepared in the step (2) on the surface of the silicon wafer, and then annealing to form a film; (5) depositing a layer of MoOx film on the PEDOT: PSS film obtained in the step (4) by adopting a thermal evaporation method; (6) preparing an Ag grid line electrode on the PEDOT: PSS / MoOx thin film; and (7) depositing a layer of metal electrode on the back surface of the sample obtained in the step (6). According to the invention, Ag is in contact with MoOx to form an Ag / MoOx electrode, so that the contact potential barrier between PEDOT: PSS / Ag is reduced. The solar cell manufacturing method is simple and easy to implement, and can be used for large-scale production.

The present invention relates to a preparation process of a high-density tungsten-copper alloy. The preparation process comprises: mixing oxide powder of copper having a certain proportion with oxide powder of tungsten in a dual-power mixer, performing crushing and activation treatment on the mixed powder in a high-speed crusher, and then reducing in a hydrogen atmosphere to obtain the nano tungsten-copper composite powder; and carrying out sheathing, degassing, and hot isostatic pressing treatment on the nano tungsten-copper composite powder, carrying out thermoplastic processing, and then carrying out annealing treatment to obtain the high-density tungsten-copper alloy. The process of the present invention is simple and controllable, has high operability, and is easy to industrialize; the phenomena of component segregation caused by preparation of the tungsten-copper alloy by an infiltration method, and uneven crystal grain size caused by particle aggregation and growth are avoided; and the proportion of the two-phase components can be accurately regulated, so that the tungsten-copper alloy with a tungsten content of 5%-95% can be prepared. The density (relative density) of the prepared tungsten-copper alloy reaches 99.6% or above; the oxygen content is lower than 40 ppm; the alloy has a uniform structure; the crystal grains are fine; and the present invention has wide application prospects and popularization value.

The invention provides a large-size CVD (chemical vapor deposition) polycrystalline diamond film surface grinding method, belongs to the technical field of diamond material processing, and aims to solve the technical problems of low CVD polycrystalline diamond chemical mechanical grinding and polishing efficiency and high consumption. The preparation method comprises the following steps: firstly, carrying out graphical processing on the surface of a CVD polycrystalline diamond film by adopting a laser processing method, then plating diamond micro-powder with a nano-thickness catalyst layer, then mixing the diamond micro-powder with the catalyst layer and an oxidizing agent to obtain a grinding liquid, then grinding the polycrystalline diamond film, and finally carrying out annealing treatment to obtain the polycrystalline diamond film with the nano-thickness catalyst layer. And further obtaining the polycrystalline diamond film with low internal stress and nanoscale roughness on the surface. According to the method, the processing efficiency of the polycrystalline diamond film can be improved to a great extent and the surface roughness can be reduced through the surface patterning of the CVD polycrystalline diamond film, the plating of the diamond micro-powder catalyst layer and the grinding fluid preparation coupled grinding processing effect.

The invention provides a perovskite thin film and a preparation method and application thereof, and the preparation method of the perovskite thin film comprises the steps: coating a substrate with a perovskite raw material solution, and then carrying out the annealing treatment, thereby obtaining a first composite material; performing ultrasonic treatment on the first composite material in an anti-solvent containing oxide nanoparticles to obtain a second composite material; and removing the anti-solvent on the second composite material, and then carrying out heat treatment to obtain the perovskite thin film. According to the preparation method of the perovskite thin film, the surface of the perovskite thin film can be polished through the ultrasonic action of the oxide nanoparticles, an amorphous region is removed, and the crystallinity of the surface of the thin film is enhanced; meanwhile, the crystallinity and the stability of the film can be further improved through heat treatment.

The invention discloses a method for preparing an oxide transistor based on a secondary post-annealing process and application thereof, and belongs to the field of integrated circuit micro-nano electronic devices. According to the method, after the structure of the oxide transistor is prepared, the oxide transistor is treated in a pre-annealing mode, and then secondary annealing treatment is carried out on the oxide transistor. The thermal stability of the oxide transistor can be improved based on the secondary post-annealing process, the carrier concentration of an active film of the oxide transistor prepared by the method is stable, the field effect mobility of the oxide transistor exceeds 60 cm < 2 > / volt.s, and the comprehensive characteristics of the device reach the international first-class level. And the application of the oxide phase inverter can be realized, and the method has wide development prospect and practical application potential. The method has the advantages of simple steps, convenience in operation and low cost.

Provided is a non-oriented electrical steel sheet that is excellent in iron loss and magnetic anisotropy under high magnetic flux and high frequency conditions, and a method for manufacturing the same. [Solution] A method for producing a grain-oriented electrical steel sheet includes the steps of heating a slab containing, by weight, 1.5 to 6.5% Si, 0.0005 to 3.5% Al, 0.01 to 3.0% Mn, 0.005 to 5.0% Cr, 0.0005 to 0.03% S, the balance being Fe and other unavoidable impurities, at 1050 to 1220°C, finish hot rolling the slab to obtain a hot-rolled sheet, hot-rolling the hot-rolled sheet at 850 to 1150°C for 30 to 300 seconds, cold-rolling the hot-rolled sheet that has been annealed to obtain a cold-rolled sheet, heating the cold-rolled sheet, and rolling the heated cold-rolled sheet. and final annealing at 600 to 1150°C for 10 to 300 seconds, wherein the cold rolling satisfies the following [Relationship 2], wherein the heating rate in the temperature range of 300 to 500°C during heating is 5 to 150°C / s, and the gas atmosphere in the temperature range of 500 to 750°C during the final annealing is composed of, by volume, 15 to 99.99% hydrogen, 0.0001 to 0.0030% oxygen, and the balance being an inert gas, and the oxygen content in the gas atmosphere in the temperature range of 800 to 1100°C during the final annealing is 1 to 1.5 times that in the temperature range of 500 to 750°C. [Relationship 2] Maximum temperature of cold-rolled sheet surface during cold rolling < 200 × cold rolling reduction / 100 + 40

The invention discloses medium-low alloy ultra-high strength steel and a preparation method thereof, the anisotropy index of the medium-low alloy ultra-high strength steel is 88%-100%, and the anisotropy index is equal to transverse performance / longitudinal performance. The preparation method comprises the steps that a consumable remelting ingot is obtained, and according to the mass percentage, the purity requirement is that S is smaller than or equal to 0.001%, P is smaller than or equal to 0.002%, O is smaller than or equal to 0.0015%, N is smaller than or equal to 0.0050%, and Ti is smaller than or equal to 0.0050%; carrying out high-temperature homogenization treatment on the consumable remelting ingot; upsetting and drawing cogging is conducted on the self-consuming remelting ingot subjected to homogenization treatment, the total forging ratio of upsetting and drawing cogging is not smaller than 15, an intermediate billet is obtained, one-time heating forming is conducted on the intermediate billet, and a formed bar with the required specification is obtained; and the formed bar is subjected to normalizing and ultra-refining and then is annealed and put in storage, and the medium-low alloy ultra-high strength steel is obtained. The longitudinal and transverse performance difference of the medium-low alloy ultrahigh-strength steel bar is reduced, and the problem that the transverse and longitudinal toughness and plasticity difference of an existing medium-low alloy ultrahigh-strength steel bar is too large is solved.

This invention relates to the fields of semiconductor information storage and artificial synaptic devices, specifically to a biological synaptic intrinsically self-assembled topological phase-change memristor and its fabrication method. The fabrication method includes: providing a substrate; depositing a bottom electrode; and depositing SrFeO on the bottom electrode. x The thin film serves as the storage medium layer; the storage medium layer undergoes heat treatment, including in-situ annealing and post-annealing. By controlling the oxygen pressure difference between in-situ and post-annealing, the single-component SrFeO is made more efficient. x An intrinsically self-assembled superlattice structure, characterized by alternating vertical and horizontal orientation regions of oxygen vacancy channels, spontaneously forms within the thin film. This structure restricts the formation sites of conductive filaments, significantly improving the consistency and stability of the device's resistive switching cycle. The process of this invention is simple, requiring no introduction of a second-phase material. The resulting memristor requires no electrical formation, exhibits a high on / off ratio, multi-level storage, and short-term synaptic plasticity, making it applicable to neuromorphic computing chips and artificial intelligence devices.

The invention discloses a friction stir welding tool and method for an aluminum alloy thin plate of a satellite cabin plate. The tool comprises a tool base, side jacking devices, a base support and a pressing device, the side jacking devices are oppositely arranged on the two sides of the tool base, the base support and the pressing device which are vertically opposite are arranged between the two side jacking devices, and areas on the two sides of a welding seam are thoroughly compacted through cooperation of the base support and the pressing device; the side jacking device and the downward pressing device are each provided with an air cylinder. By means of the tool, the assembling and welding size can be controlled, and overall deformation can be controlled through enough pressing blocks. Areas on the two sides of a friction stir welding seam are thoroughly compacted through a base support and a pressing device, then the walking rollers are designed to conduct real-time pressing and fixing in front of the welding seam, and the welding area is controlled to generate thermal deformation. According to the method, a better thin plate friction stir welding parameter interval is provided, the welding efficiency is improved, and the welding seam quality is improved. The post-welding weld joint tensile strength is not lower than that of a base material through post-welding fire heat treatment.

The invention belongs to the technical field of copper alloys, and particularly relates to a brass alloy material and a preparation method and application thereof. The performance bottleneck of the brass alloy material is broken through through multi-scale optimization by utilizing component design-phase state regulation and control-process cooperation, so that the cutting machinability, corrosion resistance and mechanical properties of the brass alloy material are synergistically improved. A two-step heat treatment method is adopted, quenching is conducted through solid solution, annealing is conducted after quenching, staged heat treatment is conducted, a high beta phase is reserved in the solid solution stage, the beta phase is partially decomposed through annealing, the beta phase proportion is reduced, the alpha phase is increased, an alpha + beta double-phase structure is obtained, the beta phase proportion is dynamically reduced from 60%-80% to 20%-30%, the beta phase proportion is dynamically adjusted and controlled, and the mechanical property of the alloy is improved. The brass alloy material has the advantages of good processability and corrosion resistance, improvement of the chip breaking property, maintenance of the corrosion resistance of a copper matrix, improvement of the hardness and strength of the brass alloy material, improvement of the cutting chip breaking capability and avoidance of brittleness increase.

The invention relates to the technical field of metal material surface chemical heat treatment, in particular to W-containing ultrahigh-strength steel, a preparation method thereof and a surface carbon-nitrogen composite strengthening process. The preparation method comprises the following steps of smelting preparation of steel, forging cogging forming, annealing heat treatment after forging of a bar, carburization, subzero treatment and surface pressurization nitriding. The ultrahigh strength steel comprises the following chemical components: 0.27-0.34 wt.% of C; 0.4 to 1.4 wt.% of Cr; 9 to 10 wt.% of Ni; 6 to 8 wt.% of Co; 1.5 to 2.5 wt.% of Mo; 1.1 to 1.6 wt.% of W; and the balance of Fe and impurity elements. The highest hardness of the carbonitriding layer of the W-containing ultrahigh-strength steel is not lower than 900 HV, the tensile strength of the steel is not lower than 2000 MPa, the yield strength is not lower than 1700 MPa, the impact absorption capacity is not lower than 60 J, and the service condition requirements of gears for aero-engines are met.

The invention discloses a P-type thin film transistor and a preparation method thereof, and belongs to the field of integrated circuit micro-nano electronic devices. According to the invention, a germanium / aluminum film periodic alternating laminated structure is used as an active layer, and crystallization is promoted through a post-annealing process, so that the characteristics of the P-type transistor are realized. The prepared thin film transistor is excellent in performance, has practical application potential, is simple in process flow and low in cost, can be compatible with an existing oxide transistor platform, is expected to realize a thin film transistor CMOS circuit cooperatively integrated with an oxide device, and is of great significance to sustainable development and industrial upgrading in the field of integrated circuits.

The invention discloses a high-strength and high-elongation lining spring wire and a processing method thereof, and the processing method comprises the following steps: carrying out one-time continuous cold rolling on an SUS304 stainless steel raw wire, annealing, and cooling to obtain the high-strength and high-elongation lining spring wire. According to the method, the SUS304 stainless steel raw wire is subjected to annealing treatment after being subjected to one-time continuous cold rolling, original rolling state delivery of the lining spring wire is overturned, the tensile strength and the ductility are improved through optimization and innovation of process design and delivery in a state after heat treatment, and the method is suitable for production and machining of large-specification high-elasticity lining springs; cost waste caused by repeated rolling and solid solution is avoided, and the machining cost is saved.

This invention relates to the field of new energy vehicle power battery manufacturing technology, specifically a fully automated laser welding and packaging process for lithium iron phosphate battery cells used in new energy vehicles. The process includes: S1. The cell shell is made of 6061 aluminum alloy containing niobium, yttrium, and lanthanum, sandblasted, then ultrasonically cleaned with an ethanol solution containing a silane coupling agent, and dried at 85-95℃; S2. The cover plate is made of 304 stainless steel containing 0.15-0.25wt% zirconium and 0.06-0.08wt% cerium, and the sealing groove is pre-cured with modified polyimide adhesive and then butt-fitted to the shell; S3. The weld seam is pre-coated with a nano-coating containing 0.1-0.3wt% titanium hydride, pulsed welded using a 1064nm fiber laser, and protected with a mixture of argon, helium, and nitrogen gas; S4. Post-weld annealing, ultrasonic treatment by immersion in a titanate aqueous solution, and finally vacuum drying. This process optimizes the shell and cover plate materials, resulting in stable welding quality, high weld strength, good corrosion resistance, improved cell sealing performance and long-term reliability, fully automated operation, and excellent production efficiency and product consistency.

The invention discloses a preparation method of a semiconductor device, and relates to the technical field of semiconductor manufacturing. The preparation method comprises the steps that a first wafer bonding piece and a second wafer bonding piece are pre-cleaned respectively, pre-cleaning comprises megasonic assisted SC1 cleaning, and supercritical CO2 drying treatment is carried out on the pre-cleaned first wafer bonding piece and the pre-cleaned second wafer bonding piece respectively to remove moisture of the first wafer bonding piece and the second wafer bonding piece; performing surface activation on the first wafer bonding sheet and the second wafer bonding sheet; and bonding and connecting the first wafer bonding sheet and the second wafer bonding sheet in a silicon-oxygen bonding mode to prepare the semiconductor device. According to the preparation method, the cleaning effect can be improved, the surface roughness can be improved, the water remaining in the hole cavity structure after cleaning can be effectively removed, and the situation that the yield of the semiconductor device is reduced due to the fact that excessive water forms steam bubbles during annealing after bonding is prevented.

The present invention discloses a ferroelectric double annealing process capable of enhancing the storage window. In this method, pre-annealing is performed before growing the functional layer of the ferroelectric memory, and post-annealing is performed after growing the upper electrode. The pre-annealing means putting the memory with the to-be-grown functional layer into an annealing furnace, heating it at a speed V1 in the atmosphere of nitrogen. When the temperature reaches between 200 and 500 degrees Celsius, hold for a time T1. After T1, perform rapid annealing. When the temperature drops to between 40 and 60 degrees Celsius, take out the memory with the to-be-grown functional layer. The post-annealing means putting the memory with the grown upper electrode into the annealing furnace, heating it at a speed V2 in the atmosphere of nitrogen. When the temperature reaches between 400 and 700 degrees Celsius, hold for a time T2. After T2, perform rapid annealing. When the temperature drops to between 40 and 60 degrees Celsius, take out the memory with the grown upper electrode. Compared with the functional layer without pre-annealing, the present invention can have a larger storage window.

This invention provides a 5-series aluminum alloy sheet and its preparation method, relating to the field of aluminum alloy technology. The preparation method includes: S1, mixing the metal raw materials of the 5-series aluminum alloy sheet according to a specified ratio and sequentially melting and casting to obtain an aluminum alloy ingot; S2, sequentially subjecting the aluminum alloy ingot to homogenization treatment, hot rolling treatment, first cold rolling treatment, intermediate annealing, and second cold rolling treatment to obtain a cold-rolled sheet; S3, sequentially subjecting the cold-rolled sheet to final annealing, cooling treatment, and straightening treatment to obtain the 5-series aluminum alloy sheet; wherein the Fe element content in the 5-series aluminum alloy sheet is not less than 0.25% by mass, the final annealing temperature is 520~550℃, the final annealing holding time is 10~60s, the final annealing heating rate is 5~15℃ / s, and the cooling rate of the cooling treatment is 8~16℃ / s. The prepared 5-series aluminum alloy sheet exhibits excellent mechanical properties, formability, and surface quality.

METHOD FOR MANUFACTURING A COATED STEEL SHEET, GALVANIZED STEEL STRIP, GALVANIZED STEEL STRIP, SPOT-WELDED JOINT OF AT LEAST TWO METAL SHEETS AND USE OF A COATED STEEL SHEET. The present invention relates to a method for manufacturing a steel strip, a steel strip with controlled decarburization depth, a spot-welded joint and the use of said steel strip or said spot-welded joint. This invention is particularly suitable for the automotive industry due to the improved resistance to liquid metal embrittlement (LME) along with the target mechanical properties.

The application provides a preparation method of bronze etching material, which comprises the following steps: preparing a bronze etching blank, homogenizing annealing the bronze etching blank to obtain a bronze etching blank for use; roughing the bronze etching blank for use, rolling the roughed bronze etching blank to a first predetermined thickness and cutting edges, and then annealing to obtain a first blank; first finish rolling and first tempering the first blank to obtain a second blank; second finish rolling and second tempering the second blank to obtain a third blank, and the processing rate of the second finish rolling is 30%-35%; third finish rolling and third tempering the third blank to obtain a fourth blank, and the processing rate of the third finish rolling is 10.0-12.5%; fourth finish rolling and fourth tempering the fourth blank to obtain a first finished product, and the processing rate of the fourth finish rolling is 10.0-15.5%; and cleaning and passivating the first finished product to obtain bronze etching strip material. The preparation method of the bronze etching material can realize rapid forming of the bronze etching material and industrialized mass production.

The application discloses a preparation method of a hybrid seed layer assisted growth perovskite film and a perovskite-crystalline silicon laminated solar cell, and belongs to the technical field of solar cells. The perovskite film preparation method provided by the application comprises the following steps: (1) wetly depositing a hybrid seed layer solution on the surface of a substrate, and cooling after heat treatment to obtain a hybrid seed layer; and (2) dryly depositing an inorganic metal salt on the surface of the hybrid seed layer to form an inorganic metal salt layer, and then performing annealing treatment to obtain a perovskite film. The hybrid seed layer has the functions of crystal nucleus induction activity and interface regulation, a stable solid-solid reaction interface is constructed between the substrate and the precursor layer through a low-temperature liquid phase pre-deposition process, and bidirectional interface passivation, crystallization orientation regulation and energy level optimization are simultaneously realized, so that the photoelectric conversion efficiency and long-term operation stability of the laminated cell are significantly improved, and excellent batch preparation repeatability is achieved.

The invention provides a micro thermoelectric equipment processing method, and belongs to the technical field of micro thermoelectric equipment manufacturing. According to the method, firstly, a bottom electrode is processed, then, a P-type thermoelectric leg Sb2Te3 and an N-type thermoelectric leg Bi2Te3 are processed, then, a top suspended electrode is processed, developing liquid is diluted, the developing time is gradually prolonged, photoresist is dissolved to the upper surfaces of the thermoelectric legs or is 0-1 m lower than the upper surfaces of the thermoelectric legs, then, washing is carried out immediately, the undissolved photoresist is reserved at the moment, and finally, the top suspended electrode is processed. Therefore, the electrode serves as a sacrificial layer and helps to complete bridging between the top electrode and the thermoelectric leg, and finally annealing treatment is carried out. The manufacturing process provided by the invention is completely compatible with the processing process of the existing silicon-based microelectronic equipment, and has good universality and compatibility; a multi-layer vertical structure is formed by adopting an alternating process of an ultraviolet lithography technology and a magnetron sputtering technology, and wide-band photoelectric detection and on-chip local temperature regulation and control can be realized.

The invention provides a method for preparing a perovskite thin film through ultrasound, and the method comprises the steps: coating a substrate with a perovskite raw material precursor solution, and then carrying out the annealing treatment, thereby obtaining a first composite material; placing the first composite material in a saturated solution of a perovskite raw material, preheating the first composite material, and then synchronously starting gradient heating and ultrasonic treatment to obtain a second composite material; and carrying out heat treatment on the second composite material to obtain the perovskite thin film. According to the method for ultrasonically preparing the perovskite thin film, the solid thin film formed by coating and annealing the perovskite raw material precursor solution is subjected to gradient heating and ultrasonic treatment in the saturated solution of the perovskite raw material at the same time, perovskite microcrystals can be separated out in an anti-temperature manner, and the perovskite microcrystals are ultrasonically grown on the perovskite thin film; the secondary growth of the perovskite thin film on the substrate coated with the perovskite thin film is realized, and the crystallization property of the thin film is improved.