Inkjet printing preparation method of thin film, and preparation method of thin film transistor

An inkjet printing and thin film technology, applied in the direction of transistors, electrical solid state devices, semiconductor devices, etc., can solve the problems of increasing process complexity and cost, and achieve the effect of good uniformity and cost reduction

Inactive Publication Date: 2016-10-12
SOUTH CHINA UNIV OF TECH
View PDF3 Cites 15 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The introduction of photolithography

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Inkjet printing preparation method of thin film, and preparation method of thin film transistor
  • Inkjet printing preparation method of thin film, and preparation method of thin film transistor
  • Inkjet printing preparation method of thin film, and preparation method of thin film transistor

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0048] Provided is an ink-jet printing preparation method of a film, in which the shape of the ink-jet printed film is defined by a hydrophobic coffee ring grid. The shape of the film includes a film pattern, a film size, a film thickness, or a film shape.

[0049] The ink-jet printing preparation method of film, comprises the steps:

[0050] a. Preparation of the coffee ring mesh.

[0051] The coffee ring mesh is a hydrophobic polymer coffee ring mesh. The preparation of the coffee ring grid is specifically to inkjet print a hydrophobic line grid with obvious coffee rings on the substrate, and then perform plasma treatment and annealing to obtain the coffee ring grid. The material of the hydrophobic wire mesh can be fluororesin CYTOP, polytetrafluoroethylene (PTFE) or polystyrene (PS).

[0052] b. Spray the ink droplet directly into the grid unit of the coffee ring, dry and post-anneal to obtain a solid film. By adjusting the number of inkjet droplets and ink concentratio...

Embodiment 2

[0062] Provided is an ink-jet printing preparation method of a film, in which the shape of the ink-jet printed film is defined by a hydrophobic coffee ring grid. The shape of the film includes a film pattern, a film size, a film thickness, or a film shape.

[0063] The ink-jet printing preparation method of film, comprises the steps:

[0064] a. Preparation of the coffee ring mesh.

[0065] The coffee ring mesh consists of a lower hydrophilic polymer layer and an upper hydrophobic polymer layer.

[0066] The preparation of the coffee ring grid specifically includes:

[0067] a1. Prepare a hydrophilic polymer layer and anneal on the substrate by methods such as spin coating, pulling, spraying or printing; the material as the hydrophilic polymer layer is polyvinyl alcohol (PVA), polyvinylpyrrolidone (PVP) or polyvinyl Acrylic acid (PAA);

[0068] a2. Re-inkjet printing a hydrophobic line grid with obvious coffee rings; the material of the hydrophobic line grid is fluororesin...

Embodiment 3

[0080] This embodiment provides a CYTOP coffee ring grid to define an indium oxide thin film pattern.

[0081] The preparation method of CYTOP coffee ring mesh is as follows:

[0082] Inkjet printing of CYTOP line grids on Al2O3 substrates. The CYTOP line width is 80um, the row spacing of the grid is set to 160um, and the column spacing is set to 320um. The printed CYTOP has obvious coffee rings.

[0083] Use oxygen plasma to treat the Al2O3 printed with CYTOP line grid, the power is 30W, and the time is 3min, leaving the CYTOP coffee ring grid, and the CYTOP coffee ring grid after plasma treatment is annealed at 120°C for 10min.

[0084] The indium oxide precursor ink was inkjet printed in the CYTOP coffee ring grid unit, the ink concentration was 0.1M, and the ink volume in each unit was the same.

[0085] The indium oxide ink in the CYTOP coffee ring grid unit is dried at 50°C for 5 minutes and annealed at 350°C for 1 hour to form an indium oxide film. The morphology of t...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
Thicknessaaaaaaaaaa
Mobilityaaaaaaaaaa
Login to view more

Abstract

The invention provides an inkjet printing preparation method of a thin film. The inkjet printing preparation method is characterized in that the appearance of the thin film prepared by inkjet printing is defined by a hydrophobic coffee-ring grid, and the appearance of the thin film includes at least one of thin film pattern, thin film size, thin film thickness or thin film morphology. The specific inkjet printing preparation method comprises the steps of: a, preparing the coffee-ring grid; b, and directly spraying ink droplets into units of the coffee-ring grid, and performing drying and post-annealing to obtain the solid-state thin film, wherein the coffee-ring grid is a hydrophobic polymer coffee-ring grid or is composed of a hydrophilic polymer layer at the lower layer and a hydrophobic polymer layer at the upper layer. The inkjet printing preparation method can be used for preparing inorganic or organic material thin films, the prepared thin films are used as a gate electrode layer, a dielectric layer, an active layer or a source/drain electrode of the thin film transistor. The inkjet printing preparation method effectively controls the droplet spreading in the inkjet printing, solves the coffee-ring problem of the prepared film layer, and can be applied to the large-area preparation of the thin film transistor devices.

Description

technical field [0001] The invention belongs to the technical field of semiconductors, and in particular relates to an inkjet printing preparation method and a thin film transistor preparation method using coffee ring grids to define the shape of a film. Background technique [0002] Inkjet printing technology is considered to be an emerging technology that can replace physical vapor deposition technology and realize large-scale, controllable and fine-scale preparation of thin films, and has attracted widespread attention and research. Compared with physical vapor deposition technology, inkjet printing can realize direct deposition of materials and preparation of high-resolution patterns, and has the advantages of simple process and low cost. Based on this, inkjet printing is now widely used in laboratory research on electronic devices such as thin film transistors (TFTs), organic light emitting diodes (OLEDs), radio frequency tags (RFID) and circuit boards. [0003] The co...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): H01L21/02H01L21/336H01L29/786H01L51/05H01L51/40
CPCH01L29/66742H01L29/66969H01L29/786H01L29/7869H01L21/02288H01L21/02697H10K71/135H10K10/462
Inventor 兰林锋李育智王磊彭俊彪
Owner SOUTH CHINA UNIV OF TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products