111 results about "Lanthanum aluminate" patented technology

The invention belongs to the field of inorganic materials, particularly relates to a thermal protection coating with component gradient change and a preparation method. The thermal protection coating comprises two components of M1 and M2, wherein the M1 is selected from one of YSZ, lanthanum aluminate, mulite or BSAS, the M2 is selected from one of Ln2Zr2O7, Ln2Ce2O7, Ln2SiO5, Ln2Si2O7 or MoSi2, and Ln is selected from rare earth elements the atom coefficients of which are 57-71, Y or Sc. The thermal protection coating has the characteristics of good coating compactness, high bonding strength with a substrate, low thermal conductivity and the like and has favorable thermal shock resistance.

The invention discloses a metal nano particle-doped rare earth lanthanum aluminate light-emitting material, which belongs to the field of preparation of rare earth lanthanum aluminate light-emitting materials. The material has the chemical general formula of La1-x AlO3:Lnx@My, wherein @ is a cladding, and M is a metal nano particle and is selected from at least one of Ag, Au, Pt, Pd and Cu; and Ln is rare earth metal and is selected from one of Tm, Sm and Tb or a mixture of Sm and Tb, x is more than zero and smaller than or equal to 0.2, and y is a molar ratio of M and Al and is more than zero and smaller than or equal to 1*10<-2>. The invention also discloses a preparation method of the meal nano particle-doped rare earth lanthanum aluminate light-emitting material. The rare earth lanthanum aluminate light-emitting material prepared by doping the metal nano particle has the advantages of high stability and better light-emitting performance. The preparation method of the invention has simple process, low equipment requirement, no pollution and easy control and is suitable for industrialized production.

The invention provides a full-color phosphor of a single substrate single mixed lanthanum aluminate base with adjustable colors as well as a manufacture method. The invention belongs to the technical fields of photoelectric materials and apparatuses. The chemical formula of the phosphor is La1-aAlO3:Eua,Li<+>b, wherein, accounted by molal quantity, a is equal to or more than 0.02 and equal to or less than 0.2; b is equal to or more than 0.00 and equal to or less than 0.4; under the excitation of lights with wavelengths of 250nm to 400nm, the phosphor can simultaneously have three emission areas which include the blue lights the emission wavelengths of which are 440nm, the green lights the emission wavelengths of which are 515nm and the red lights the emission wavelengths of which are 592 and 618nm for composing the white light. The manufacture process is as follows: the weighed materials are dissolved into alcohol for forming serum and manufactured into powder through ultrasonic surging and drying; then the mixed gas of N2 and H2 is used as the reduction atmosphere for obtaining the phosphor under high temperature ignition. The spectrum characteristics of the phosphor can be effectively adjusted through adjusting the preparation technical conditions which include the ignition time, the ignition temperature, the reduction atmosphere and the adding concentration of a charge compensation agent of Li<+>. The full-color phosphor can be used for the white light apparatuses of a white light LED, a fluorescent lamp, and the like.

The present invention provides an infrared energy-saving coating material and applications thereof, and belongs to the technical field of infrared energy-saving materials, wherein a high-emissivity infrared energy-saving material is adopted as a core component, and a dispersant accounting for 3-5% of the mass of the infrared energy-saving coating material, a liquid binder accounting for 10-50% of the mass of the infrared energy-saving coating material, and a stabilizer accounting for 2-5% of the mass of the infrared energy-saving coating material are added to prepare the infrared energy-saving coating material, wherein the high-emissivity infrared energy-saving material adopts lanthanum aluminate of the perovskite structure as a main phase, 0.01-0.25 mole of second main group element ions is doped at the lanthanum site, and 0.02-0.5 mole of transition metal element ions is doped at the aluminum site. According to the present invention, the highest emissivity of the prepared infrared energy-saving coating material can achieve 0.95, and the prepared infrared energy-saving coating material has good high temperature stability, and has great application potential in the high temperature thermal industry furnace kiln energy saving field.

The invention relates to a method for preparing nanometer lanthanum aluminate powders. The method comprises the following steps: mixing and stirring microemulsion with the composite of Span80 and Tween80 as the surfactant, with n-butanol as the assistant surfactant and respectively with water solution of lanthanum nitrate and aluminum nitrate and ammonia water as the aqueous phase; after separation, washing and drying, incinerating the product at 750-1000 DEG C to obtain globular lanthanum aluminate powders with high purity, light agglomeration and particle diameter range of 20-60mm. The method of the invention solves problems of the traditional nanometer lanthanum aluminate powder preparing method, including high temperature, large lanthanum aluminate powder size, morphological irregularity and serious agglomeration. The product can be used as key materials for microwave devices such as wave filters, harmonic oscillators, superconductive films, etc., and can also be applied as the catalyst for oxidative coupling of methane as well as hydrogenization and hydrogenolysis of hydrocarbons.

The invention discloses a method for preparing lanthanum aluminate/lanthanum chromate by spraying pyrolysis and belongs to the technical field of materials. The method comprises the following steps: (1) dissolving lanthanum chloride and aluminium chloride or chromium chloride to prepare solution; (2) adopting air as carrier gas, spraying the solution into a roasting furnace to carry out spraying pyrolysis and obtaining roasting slag; (3) calcining the roasting slag to obtain the lanthanum aluminate or the lanthanum chromate. The method disclosed by the invention has the advantages that the reaction temperature and the reaction time for producing the lanthanum aluminate are reduced; and proved by analysis results of X-ray diffraction of a product secondarily roasted, the crystal form of the product is an inclined and square hexahedron, so that the defects such as high reaction temperature of a solid-phase synthesis method and non-uniform particle size and distribution and irregular shape of the product are effectively avoided.

The invention belongs to the technical field of nano-pillar LED preparation, and discloses a nano-pillar LED grown on a strontium tantalum lanthanum aluminate substrate and a preparation method thereof. The nano-pillar LED grown on a strontium tantalum lanthanum aluminate substrate comprises a strontium tantalum lanthanum aluminate substrate, an AlN nucleation layer grown on the strontium tantalum lanthanum aluminate substrate, a GaN nano-pillar template grown on the AlN nucleation layer, an AlN/GaN super lattice layer grown on the GaN nano-pillar template, a non-doped GaN layer grown on the AlN/GaN super lattice layer, an n-type doped GaN layer grown on the non-doped GaN layer, an InGaN/GaN quantum well grown on the n-type doped GaN layer, and a p-type doped GaN layer grown on the InGaN/GaN quantum well. The substrate material is of low cost. A nano-pillar array prepared is size-controllable and of uniform orientation. The obtained nano-pillar LED has low defect density and excellent electrical and optical properties.

This invention relates to a new heterojunction material with magnetoelectric resistance property, including the doped manganese oxide layer generated in the substrate, and the auxiliary layer generated on the said doped manganese oxide layer; the doped manganese oxide layer is generated on the auxiliary layer, and the auxiliary layer is generated on the doped manganese oxide layer, which in turn stacking; preparing the two materials heterojunction magnetoelectric resistance material. Also, the doped manganese oxides can periodically and alternately stack with the three materials of strontium titanate and lanthanum aluminum, or strontium titanate and barium titanate, or barium titanate and lanthanum aluminate, to prepare the multilayer membrane of the three materials and the magnetoelectric resistance heterojunction material of superlattice structure, in which the doped manganese oxide layers thickness being 0.8nm~5mum, the auxiliary layer thickness being 0.8nm~5mum. The said heterojunction material has low-field high sensitivity magnetoelectric resistance property, and 30% greater magnetoelectric resistance changing rate even at room temperature and it has very wide applications in the magnet recording, the magnetic header and the sensors.

The invention belongs to the technical field of infrared energy conservation, and relates to a high-emissivity infrared energy-saving material and a preparation method thereof. The high-emissivity infrared energy-saving material takes lanthanum aluminate with a perovskite structure as a main phase, and raw materials of the high-emissivity infrared energy-saving material comprise lanthanum oxide, aluminum oxide, a doping agent I and a doping agent II, which are used for preparing the lanthanum aluminate main phase; wherein the doping agent I is calcium oxide, and the doping agent II is chromiumoxide; 0.1-0.2 mol of calcium ions are doped at the lanthanum site per unit mol, and 0.1-0.2 mol of chromium ions are doped at the aluminum site per unit mol; the raw materials of the high-emissivityinfrared energy-saving material also comprise zirconium oxide; wherein the zirconium oxide and calcium oxide are subjected to a solid-phase reaction to generate second main-phase calcium zirconate, generation of a low-melting-phase (CaLa) Al3O7 is inhibited or reduced through the solid-phase reaction, and zirconium ions subjected to the solid-phase reaction with calcium ions in calcium oxide areprovided by zirconium oxide. The material has the characteristics of high emissivity, high temperature resistance, high stability and high compatibility.

The invention relates to a kind of lanthanum aluminate phosphor of alkaline manganese metal halide activation which is used for a plasma display panel (PDP) with green emission, and its mixture preparing. The phosphor has following formula: Ln (2-x-y) B22O36: Mnx.Ay, in which: Ln is selected from: La, Y, Gd, Tb, and their combinations of lanthanide metal, in which, La: 0.57 <= La <= 1. 782, and Y: 0 <= Y <= 0.19, and Gd: 0.198 <= Gd <= 0.95, and Tb: 0 <= Tb <= 0.19. A is selected from Li, Na, K, and their combinations. B is selected from Al and the combination of Al and Ga, in which, 0.01 <= x <= 0.1, and 0.01 <= y <= 0.1. When the phosphors are excited by the radiation of 147nm and 173nm of different composition of xenon gas mixture, the phosphors has energy band emission in the green region, and it reachs the peak at 515nm.

The invention discloses a preparation method of a high temperature superconducting coated conductor La0.7Sr0.3MnO3 buffer layer thin film. The preparation method mainly comprises the steps of a, lanthanum nitrate, strontium nitrate and manganese nitrate are dissolved in N, N-dimethyl formamide to form an anhydrous solution, wherein the number ratio of lanthanum ions, strontium ions and manganese ions is 7:3:10; b, polyvinylpyrrolidone K30 is added into the anhydrous solution of step a to form colloid; c, the colloid prepared by step b is coated on a lanthanum aluminum oxide substrate, and then drying in an infrared drying box is carried out; and d, a substrate plate which is dried by step c is placed in a tube type furnace, undergoes thermal insulation at the temperature of 160 to 220 DEG C, is slowly heated to the temperature of 500 to 540 DEG C for thermal insulation, and finally undergoes annealing at the temperature of 830 to 870 DEG C. According to the method, a good LSMO thin film with a smooth surface can extends and grows on the lanthanum aluminum oxide (LaAlO3) substrate; and the method has the advantages of low preparation cost and less environment pollution, and is suitable for mass production.

The invention discloses a preparation method of a gadolinium-barium-copper-oxygen compact film. The preparation method comprises the following steps of: dissolving gadolinium trifluoroacetate, barium trifluoroacetate and copper trifluoroacetate in methanol to obtain a first trifluoroacetate precursor solution; adding a chelating agent and the first trifluoroacetate precursor solution into an agitator, agitating and reacting to form a complex, and fixing the volume of the complex in a methanol and propanoic acid mixed solution to obtain a second trifluoroacetate precursor solution; uniformly coating the second trifluoroacetate precursor solution on a lanthanum aluminate monocrystalline substrate by adopting a spin-coating method, and then, placing the lanthanum aluminate monocrystalline substrate coated with a coating layer in a thermal decomposition furnace to carry out thermal decomposition to obtain a precursor film with a smooth surface; and placing the precursor film in a tube furnace to carry out crystallization treatment, dropping a temperature in the tube furnace to the temperature of oxygen diffusion treatment after the crystallization treatment to carry out the oxygen diffusion treatment, and cooling along with the furnace to obtain the gadolinium-barium-copper-oxygen compact film. The preparation method is simple in process and reasonable in design, and further, is easy to operate, and the gadolinium-barium-copper-oxygen compact film prepared by adopting the preparation method has the smooth surface, is flat and compact, and is excellent in performance.

The invention belongs to the technical field of multiple quantum wells of nanometer arrays, and discloses an InGaN/GaN nano-pillar multiple quantum well grown on a strontium tantalum lanthanum aluminate substrate and a preparation method thereof. The InGaN/GaN nano-pillar multiple quantum well grown on a strontium tantalum lanthanum aluminate substrate comprises an AlN nucleation layer grown on a La<0.3> Sr<1.7>AlTaO<6> substrate, a GaN nano-pillar template grown on the AlN nucleation layer, an AlN/GaN super lattice layer grown on the nano-pillar template, and an InGaN/GaN nano-pillar multiple quantum well grown on the AlN/GaN super lattice layer. A nano-pillar array prepared is size-controllable and of uniform orientation. The obtained multiple quantum well has low defect density and excellent electrical and optical properties.