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Zirconium oxide resistance memorizer film preparation method and test method of resistance change property of zirconium oxide resistance memorizer film

A resistance memory and thin film preparation technology, which is applied in the field of microelectronic materials, can solve the problems of expensive equipment and achieve the effect of low equipment, good film quality, and smooth and dense surface

Inactive Publication Date: 2013-05-08
XIAN UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] The purpose of the present invention is to provide a method for preparing a zirconia resistance memory film, which solves the problems of expensive equipment and high cost in the existing preparation methods

Method used

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  • Zirconium oxide resistance memorizer film preparation method and test method of resistance change property of zirconium oxide resistance memorizer film
  • Zirconium oxide resistance memorizer film preparation method and test method of resistance change property of zirconium oxide resistance memorizer film
  • Zirconium oxide resistance memorizer film preparation method and test method of resistance change property of zirconium oxide resistance memorizer film

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preparation example Construction

[0033] The method for testing the resistance switching characteristics of the zirconia resistance memory film prepared by the above preparation method, the specific steps are as follows:

[0034] Step 1. Connect the zirconia resistance memory film with four wires. The wires are gold wires with a purity of 99.9%. The wires are connected to the test points with metal indium. Two of the wires are connected to the platinum layer of the top electrode. Independent, the other two leads are connected to the bottom electrode yttrium barium copper oxide superconducting film, which is separated and independent;

[0035] Step 2, fix the zirconia resistance memory film connected with four leads on the sample stage, and then put it into the material comprehensive physical property measuring instrument for the Voltage-Current characteristic curve (Voltage-Current) test, in which the material comprehensive physical property measuring instrument Set it to the electrical performance test, that ...

Embodiment 1

[0039] Step 1, in the glove box that relative humidity is not greater than 40%RH, zirconium n-butoxide, acetylacetone and dehydrated alcohol are mixed with the mol ratio of 1:1:40, then mixed solution is stirred on magnetic stirrer 2h to The solution was clarified, and then it was sealed and aged for 24 hours to obtain the zirconia sol.

[0040] Step 2, at room temperature, use the zirconia sol prepared in step 1 as the precursor solution, use the yttrium barium copper oxide superconducting film of the lanthanum aluminate single crystal substrate as the substrate to pull the zirconia film, and then use the dipping and pulling method A zirconia gel film was prepared on a superconducting electrode by a film pulling machine, and then placed in the air to dry naturally for 10 minutes;

[0041] Step 3, annealing the zirconia gel film prepared in step 2 in an annealing furnace at 500°C, the annealing treatment is carried out in the atmosphere, the annealing time is 20min, after the ...

Embodiment 2

[0049] Step 1, in a glove box with a relative humidity not greater than 40%RH, zirconium n-butoxide, acetylacetone and absolute ethanol are mixed with a molar ratio of 1:1:45, and then the mixed solution is stirred on a magnetic stirrer for 1.5h After the solution is clarified, it is sealed and aged for 20 hours to obtain the zirconia sol.

[0050] Step 2, at room temperature, use the zirconia sol prepared in step 1 as the precursor solution, use the yttrium barium copper oxide superconducting film of the lanthanum aluminate single crystal substrate as the substrate to pull the zirconia film, and then use the dipping and pulling method A zirconia gel film was prepared on a superconducting electrode by a film pulling machine, and then placed in the air to dry naturally for 8 minutes;

[0051] Step 3, annealing the zirconia gel film prepared in step 2 in an annealing furnace at 500°C, the annealing treatment is carried out in the atmosphere, the annealing treatment time is 15min...

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Abstract

The invention discloses a zirconium oxide resistance memorizer film preparation method. The method comprises a first step of enabling zirconium oxide colloidal sol to serve as precursor solution, a second step of enabling a yttrium barium copper oxide superconducting film of a lanthanum aluminate single crystal substrate to serve as a substrate pulling zirconium oxide film, a third step of producing a zirconium oxide gel film on a superconducting electrode by adopting of a dipping and pulling method, a fourth step of carrying out annealing treatment for the zirconium oxide gel film and natural cooling of the zirconium oxide gel film and a fifth step of carrying out upper current conducting cap sputtering for the zirconium oxide gel film to obtain a zirconium oxide resistance memorizer film. The invention further discloses a test method of the resistance change property of the zirconium oxide resistance memorizer film prepared by means of the preparation method, the zirconium oxide resistance memorizer film is connected by adopting of a four-lead method, leads are connected with a test point through metal indium, the zirconium oxide resistance memorizer film is fixed on a sample platform and then is placed in a material comprehensive physical property measuring device and a volt-ampere characteristic curve test is carried out on the zirconium oxide resistance memorizer film. The zirconium oxide resistance memorizer film preparation method is simple in craft, low in equipment price and low in cost. The zirconium oxide resistance memorizer film of the resistance change property is environment-friendly, low in cost and easy to operate.

Description

technical field [0001] The invention belongs to the technical field of microelectronic materials, and relates to a method for preparing a zirconia resistance memory film, and also relates to a method for testing the resistive properties of the zirconia resistance memory film. Background technique [0002] The existing zirconia resistance memory film preparation methods are mainly magnetron sputtering method and pulsed laser deposition method. The magnetron sputtering method is to fill an appropriate amount of argon in high vacuum, A high DC voltage is applied between (coating chamber walls), and a magnetron abnormal glow discharge is generated in the coating chamber to ionize the argon gas; the argon ions are accelerated by the cathode and bombard the surface of the cathode target, sputtering the atoms on the target surface deposited on the surface of the substrate to form a thin film. The pulsed laser deposition method is a vacuum physical deposition process. It focuses a ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L45/00G01R27/08G01R31/00
Inventor 李颖赵高扬金龙
Owner XIAN UNIV OF TECH
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