Patents
Literature
Patsnap Copilot is an intelligent assistant for R&D personnel, combined with Patent DNA, to facilitate innovative research.
Patsnap Copilot

158results about How to "Guaranteed low temperature stability" patented technology

Nanofiltration membrane with nanometer hybridized desalination layer

The invention discloses a nanofiltration membrane with a nanometer hybridized desalination layer. The desalination layer formed through interphase hybridization of an inorganic nanoparticle with a particle size of 1 to 1000 nm and polyamide or polyimide is arranged on a porous supporting layer of the membrane. A preparation method for the nanofiltration membrane mainly comprises the following steps: pre-dispersion of the nanoparticle, preparation of a solution A, preparation of a solution B, interfacial polymerization, surface polishing and roller squeezing, rinsing with deionized water, moisture retention with glycerin and drying, wherein air drying and sulfonation can be carried out after surface polishing and roller squeezing. According to the invention, nanometer hybridization effects of a high polymer nano-material in the nanofiltration membrane are made full use of, so hydrophilic performance, antioxidation performance and anti-pollution performance of the nanofiltration membrane are improved, and the nanofiltration membrane has the advantages of low pollution, great flux and a high removal rate. The preparation method is scientific and reasonable, enables the nanometer composite nanofiltration membrane with a specific nanoparticle and polyamide hybridized desalination layer to be prepared and has higher ion selectivity, low pollution capability and temperature stability.
Owner:VONTRON TECH CO LTD

Nuclear shell type long-acting antibacterial emulsion and preparation method thereof

The invention relates to a nuclear shell type long-acting antibacterial emulsion. The nuclear shell type long-acting antibacterial emulsion comprises the following raw material components: water, n-butyl acrylate, isobutyl acrylate, isooctyl acrylate, styrene, methyl methacrylate, vinyl acetate, guanidinium oligomer macromonomers, an emulsifying agent, an initiating agent, a cross-linking agent and sodium bicarbonate. The preparation method comprises the following steps: preparing each raw material component; adding water, the emulsifying agent and isooctyl acrylate into a reactor, stirring, heating to 60-70 DEG C, adding the initiating agent to initiate reaction, and after the emulsion becomes blue, maintaining for 60-120 minutes, so as to obtain a nuclear layer emulsion; maintaining the temperature at 70-80 DEG C, adding n-butyl acrylate, heating to 81-85 DEG C, maintaining the temperature, cooling, and discharging, so as to obtain the nuclear shell type long-acting antibacterial emulsion. According to the preparation method, guanidinium and guazatine oligomers are taken as antibacterial functional groups, and guanidyl serves as a main antimicrobial group, has an obvious antibacterial effect and is very safe to human bodies. The preparation method for the nuclear shell type long-acting antibacterial emulsion is simple, rapid, environmentally friendly and suitable for industrial production, and the operation is easy.
Owner:GUANGXI UNIV

System for High Efficiency Solid-State Light Emissions and Method of Manufacture

In one embodiment of the invention, a bonding material is used to bond a substitute substrate to the LED, wherein the bonding material does not including gold or tin. The bonding material preferably includes gallium (Ga), such as a combination of Ga and Al or Cu. This bonding material has high thermal conductivity, high strength, high temperature stability and is low cost. In another embodiment of the invention, the substitute substrate is first thinned before it is bonded to the LED structure, so that the substitute substrate is flexible and conforms to the shape of the LED structure. In yet another embodiment of the invention, an apparatus is used for bonding a substitute substrate to a LED which comprises a plurality of semiconductor epitaxial layers, said semiconductor epitaxial layers having been grown on the growth substrate so that said semiconductor epitaxial layers are curved in shape. The apparatus comprises a conduit for evacuating a region near the substitute substrate on a side of the substitute substrate that is opposite to that of said semiconductor epitaxial layers. Gas pressure is applied on the semiconductor epitaxial layers, and the substitute substrate conforms to the shape of said semiconductor epitaxial layers as a result of pressure applied. A bonding material is used for bonding said substitute substrate to the semiconductor epitaxial layers.
Owner:DICON FIBEROPTICS

Bismuth ferrite-barium titanate based high-temperature lead-free piezoelectric ceramic with low dielectric loss and high-temperature stability and preparation method thereof

The invention discloses bismuth ferrite-barium titanate based high-temperature lead-free piezoelectric ceramic with low dielectric loss and high-temperature stability and a preparation method thereof. The bismuth ferrite-barium titanate based high-temperature lead-free piezoelectric ceramic has a formulation composition with a general formula of (Bi<1-w>Mw)(Fe<1-t>Me'''t)O<3-x>BaTiO<3+y>Bi(Me'0.5Me''0.5)O<3+z>Bi(Zn0.5Ti0.5)O<3+u>NdCoO<3+m>P<+n>MnCO3, where x, y, z, u, m, n, t and w represent mol fractions; x is more than 0 and no more than 0.4; y is no less than 0 and no more than 0.1; z is more than 0 and less than 0.05; u is no less than 0 and no more than 0.1; m is more than 0 and no more than 0.1; n is more than 0 and no more than 0.1; w is no less than 0 and no more than 0.1; and t is no less than 0 and no more than 0.1. In the general formula, M and Me''' are trivalent metal elements; Me'' and M' respectively are a divalent metal element and a pentavalent metal element; and P is a sintering auxiliary agent. The piezoelectric ceramic provided by the invention has low dielectric loss and high-temperature stability and can be applied to the field of high temperature.
Owner:GUILIN UNIV OF ELECTRONIC TECH

High performance multilayer ceramic capacitor medium and preparation method thereof

The invention discloses a multilayer ceramic capacitor medium with a formula of {[(1-x)BaTiO3+xNBT]+y wt% Nb2O5}+z wt% MgO+a wt% Glass+b wt% RE2O3+c wt% MnCO3; wherein x=0.1-0.25, and x is the mole percentage content of [(1-x)BaTiO3+xNBT]; y=2.2-2.8, and y is the mass percentage content of additional Nb2O5 on a basis of [(1-x)BaTiO3+x NBT]; z=1.0-2.0, a=1-7, b=0-0.015, c=0-0.5; and z, a, b, c aremass percentage contents of additional raw materials on a basis of {[(1-x)BaTiO3+xNBT]+y wt% Nb2O5}; NBT=natrium bismuth titanate; RE=La, Nd, or Gd; and Glass is a self-made additive, wherein the formula of Glass is 1-15% SnO2+0-22% PbO+2-26% TiO2+0-42% Bi2O3+5-39% B2O3. The preparation method comprises steps that: (1) the additive and NBT are prepared; (2) a clinker is fired according to the formula of [(1-x)BaTiO3-xNBT]-y wt% Nb2O5; (3) blending, ball-milling, drying, and grinding are carried out according to the formula; (4) the material is granulated, pressed, and shaped; (5) the product is sintered under a temperature of 1100 DEG C-1200 DEG C; and (6) silver electrode are fired, and the product is tested. The invention provides a multilayer ceramic capacitor medium material with an excellent temperature stable form (X9R form). The material is adaptable under a working temperature above 200 DEG C.
Owner:TIANJIN UNIV

Method for monitoring temperature of annealing machine bench

The invention relates to a method for monitoring the temperature of an annealing machine bench. The method is characterized by comprising the following steps of: forming a cobalt metal layer and a cobalt metal protective layer on the surface of a wafer; performing an annealing process on the wafer so as to form a cobalt silicide layer; performing an etching process on the wafer, removing the cobalt metal layer which is not reacted to form the cobalt silicide layer, and measuring the resistance value of the cobalt silicide layer; and acquiring a monitoring temperature value according to a corresponding relation database of the resistance value and a temperature value, and monitoring the temperature of the annealing machine bench according to the monitoring temperature value. By the method for monitoring the temperature of the annealing machine bench, the low temperature of the annealing machine bench can be monitored and the stability of a low temperature process of the annealing machine bench can be objectively reflected by using the characteristics that the sensitive temperature of a cobalt silicide sheet resistance to the annealing machine bench is between 500 and 900 DEG C. Theuniformity of sheet resistances can be easily controlled, and the uniformity of temperatures can be easily adjusted by a deposition method for depositing metals.
Owner:CSMC TECH FAB2 CO LTD

System for high efficiency solid-state light emissions and method of manufacture

In one embodiment of the invention, a bonding material is used to bond a substitute substrate to the LED, wherein the bonding material does not including gold or tin. The bonding material preferably includes gallium (Ga), such as a combination of Ga and Al or Cu. This bonding material has high thermal conductivity, high strength, high temperature stability and is low cost. In another embodiment of the invention, the substitute substrate is first thinned before it is bonded to the LED structure, so that the substitute substrate is flexible and conforms to the shape of the LED structure. In yet another embodiment of the invention, an apparatus is used for bonding a substitute substrate to a LED which includes a plurality of semiconductor epitaxial layers, said semiconductor epitaxial layers having been grown on the growth substrate so that said semiconductor epitaxial layers are curved in shape. The apparatus includes a conduit for evacuating a region near the substitute substrate on a side of the substitute substrate that is opposite to that of said semiconductor epitaxial layers. Gas pressure is applied on the semiconductor epitaxial layers, and the substitute substrate conforms to the shape of said semiconductor epitaxial layers as a result of pressure applied. A bonding material is used for bonding said substitute substrate to the semiconductor epitaxial layers.
Owner:DICON FIBEROPTICS

Method for Enhancing High Temperature and Low Temperature Resistance of Aluminum Electrolytic Capacitors

The invention discloses a method for enhancing the high temperature resistance and low temperature resistance of an aluminum electrolytic capacitor, which includes the preparation of an electrolyte, and the electrolyte includes the following raw materials in parts by weight: main solvent: 48-80%; auxiliary solvent: 10-32%, solute : 15-30%, additives: 0.3-3.2%, wherein, the solvent composed of the main solvent and the auxiliary solvent is a liquid with low saturated vapor pressure; the solute is tetramethylammonium maleate, ammonium adipate, triethylamine, One or more of 1,2-dimethylimidazolium phosphoric acid and phosphorous acid. Due to the selection of solvents with low saturated vapor pressure, the ratio of solutes is increased to ensure that the electrolyte does not condense at low temperature and the solutes do not precipitate; adding hydrogen absorbing agents and water suppressing agents reduces the internal pressure of the product; adding inhibitors and low leakage agents, The occurrence of high-temperature characteristic defects such as too fast recovery of electric leakage is prevented; the invention can also effectively ensure the low-temperature stability of the electrolyte, and provide guarantee for the stable operation of the LED driving power supply.
Owner:ZHAOQING BERYL ELECTRONICS TECH

Sealing gasket covered with carbon-fiber covering yarn and preparation method of sealing gasket

The invention discloses a sealing gasket covered with carbon-fiber covering yarn. The sealing gasket comprises two mixed padding layers, a reinforcing fiber layer and a carbon-fiber covering yarn layer, wherein the reinforcing fiber layer is located between the two mixed padding layers, and the carbon-fiber covering yarn layer is arranged at the outer side of the sealing gasket in a covering manner. The sealing gasket is made of polytetrafluoroethylene, nitrile rubber, graphite, natural rubber, coke powder, vermiculite powder, barite powder, aramid fibers and glass fibers, and therefore the sealing gasket has the beneficial effects of being quite low in friction coefficient, quite good in high temperature stability and heat shock resistance, quite high in strength and heat conductivity coefficient, low in expansion coefficient, quite high in electrical resistivity, resistant to corrosion and capable of allowing microwaves or infrared rays to permeate and the like, the natural rubber is quite high in elasticity, and therefore the sealing gasket is quite good in elasticity and plasticity; the periphery of the sealing gasket is covered with the carbon-fiber covering yarn layer, and therefore the sealing gasket has the beneficial effects of being quite high in acid resistance, alkali resistance, corrosion resistance and abrasion resistance; and in addition, the sealing gasket is subjected to vulcanization treatment, so that the sealing gasket is durable and not prone to aging.
Owner:DONGTAI HUAYANG GLASS FIBER

Surface acoustic wave sensor with low loss and high temperature stability

The invention provides a surface acoustic wave sensor with low loss and high temperature stability, which comprises a piezoelectric substrate, an input interdigital transducer and an output interdigital transducer which are deposited on the piezoelectric substrate and sensitive membranes covered on the piezoelectric substrate, the input interdigital transducer and the output interdigital transducer. The piezoelectric substrate is made of crystal materials with high electromechanical coupling factor and high temperature stability, and the piezoelectric substrate adopts LGS, LGT, LGN, gallium phosphate, Sr3TaGa3Si2O14, Sr3NbGa3Si2O14, Ca3TaGa3Si2O14, Ca3NbGa3Si2O14, Sr3Ga2Ge4O14 and lithium tetraborate. The input interdigital transducer excites and spreads acoustic waves in the piezoelectricsubstrate, the output interdigital transducer is used for receiving the acoustic waves, when a loaded object to be tested reacts with the sensitive membranes, the features of the acoustic waves are changed, and a conclusion of the features of the object to be tested is obtained by detecting the changes. The surface acoustic wave sensor improves the performances of the sensor on the structural aspect and realizes the practical surface acoustic wave sensor with low loss and high temperature stability.
Owner:INST OF ACOUSTICS CHINESE ACAD OF SCI
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products