Method for monitoring temperature of annealing machine bench

Abstract

The invention relates to a method for monitoring the temperature of an annealing machine bench. The method is characterized by comprising the following steps of: forming a cobalt metal layer and a cobalt metal protective layer on the surface of a wafer; performing an annealing process on the wafer so as to form a cobalt silicide layer; performing an etching process on the wafer, removing the cobalt metal layer which is not reacted to form the cobalt silicide layer, and measuring the resistance value of the cobalt silicide layer; and acquiring a monitoring temperature value according to a corresponding relation database of the resistance value and a temperature value, and monitoring the temperature of the annealing machine bench according to the monitoring temperature value. By the method for monitoring the temperature of the annealing machine bench, the low temperature of the annealing machine bench can be monitored and the stability of a low temperature process of the annealing machine bench can be objectively reflected by using the characteristics that the sensitive temperature of a cobalt silicide sheet resistance to the annealing machine bench is between 500 and 900 DEG C. Theuniformity of sheet resistances can be easily controlled, and the uniformity of temperatures can be easily adjusted by a deposition method for depositing metals.

Description

【Technical field】 [0001] The invention relates to a semiconductor process monitoring method, in particular to a method for monitoring the temperature of an annealing machine. 【Background technique】 [0002] With the continuous development of semiconductor manufacturing process, the use of metal silicide as a dielectric layer that can reduce contact resistance is becoming more and more common. An effective method is needed to monitor the temperature of the annealing machine in the semiconductor process. At present, the temperature monitoring of the annealing machine generally uses an implant control chip, which performs ion implantation in advance, and then measures the square resistance after the annealing is activated. The square resistance is sensitive to the annealing machine. Therefore, the change of the sheet resistance can reflect the change of the annealing temperature, but the injection control chip usually needs to be activated at a higher temperature (>950°C) an...

AI Technical Summary

Problems solved by technology

An effective method is needed to monitor the temperature of the annealing machine in the semiconductor process. At present, the temperature monitoring of the annealing machine generally uses an implant control chip, which performs ion implantation in advance, and then measures the square resistance after the annealing is activated. The square resistance is sensitive to the annealing machine. Therefore, the change of the sheet resistance can reflect the change of the annealing temperature, but the injection control chip usually needs to be activated at a higher temperature (>950°C) and has a high sensitivity, and the monitoring temperature range is higher than 950 °C, there is no effective control method for temperature monitoring of annealing machines below this temperature

Images