Heterojunction material with magnetoresistance characteristics
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A magnetoresistance and heterojunction technology, which is applied in the fields of magnetic field-controlled resistors, magnetic objects, magnetic films, etc. Effect
Inactive Publication Date: 2007-07-04
INST OF PHYSICS - CHINESE ACAD OF SCI
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However, due to the doped manganese oxide at room temperature and low f
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Embodiment 1
[0028] Referring to FIG. 1 , a 2-stacked heterojunction material with magnetoresistance properties is fabricated.
[0029] Using laser molecular beam epitaxy equipment, select n-type single crystal Si with a resistivity of 2-6Ω.cm and 2 inches of single-sided polishing as the substrate 1, and adopt conventional laser molecular beam epitaxy technology, at 1×10 -2 Under the oxygen condition of Pa, epitaxial growth of 250nm thick La on Si substrate 1 0.9 Sr 0.1 MnO 3 The thin film is used as the doped manganese oxide layer 2. Then at 1×10 -3 Under the oxygen condition of Pa, in the 250nm thick La 0.9 Sr 0.1 MnO 3 An oxygen-deficient strontium titanate film with a thickness of 100 nm was epitaxially grown on the film 2 as the first auxiliary layer 3, at 1×10 -3 Under the oxygen condition of Pa, the prepared SrTiO 3-δ The δ of the thin film is about 0.4. A 2-stacked heterojunction material with magnetoresistance properties is prepared, in which the doped manganese oxide la...
Embodiment 2
[0031] According to the preparation process of Example 1, use BrTiO 3-δ Instead of SrTiO 3-δ Doping manganese oxide 2, preparing the second auxiliary layer 4 made of doped manganese oxide 2 and oxygen-deficient barium titanate layer, to form a 2-stacked heterojunction material with magnetoresistance characteristics.
Embodiment 3
[0033] According to the preparation process of Example 1, use LaAlO 3-δ Instead of SrTiO 3-δ Make the third auxiliary layer 5, prepare the third auxiliary layer 5 made of the doped manganese oxide layer 2 and the oxygen-deficient lanthanum aluminate, and make a heterojunction material with magnetoresistance characteristics of 2 stacks.
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Abstract
This invention relates to a new heterojunction material with magnetoelectric resistance property, including the doped manganese oxide layer generated in the substrate, and the auxiliary layer generated on the said doped manganese oxide layer; the doped manganese oxide layer is generated on the auxiliary layer, and the auxiliary layer is generated on the doped manganese oxide layer, which in turn stacking; preparing the two materials heterojunction magnetoelectric resistance material. Also, the doped manganese oxides can periodically and alternately stack with the three materials of strontium titanate and lanthanum aluminum, or strontium titanate and barium titanate, or barium titanate and lanthanum aluminate, to prepare the multilayer membrane of the three materials and the magnetoelectric resistance heterojunction material of superlattice structure, in which the doped manganese oxide layers thickness being 0.8nm~5mum, the auxiliary layer thickness being 0.8nm~5mum. The said heterojunction material has low-field high sensitivity magnetoelectric resistance property, and 30% greater magnetoelectric resistance changing rate even at room temperature and it has very wide applications in the magnet recording, the magnetic header and the sensors.
Description
technical field [0001] The invention relates to a heterojunction material, in particular to a series of heterojunction materials with magnetoresistance properties. Background technique [0002] Doped lanthanum manganate (LaMnO 3 ) is a functional material with giant magnetoresistance properties, as described in Document 1: Ken-ichi Chahara, Toshiyuki Ohno, Masahiro Kafai and Yuzoo Kozono, Appl. Phys. Lett. 63, 1990 (1993). Another example is document 2: S. Jin, T. H. Tiefel, M. McCormack, R. A. Fastnacht, R. Ramesh, and L. H. Chen, Science 264, 423 (1994)). The application of this material in magnetic recording, magnetic head and sensor etc. has attracted people's interest and attention at present, such as literature 3: M.Rajeswari, A.Goyal, A.K.Raychaudhuri, M.C.Robson, G.C.Xiong, C.Kwon, R. Described in Ramesh, R.L. Greene and T. Venkatesan, Appl. Phys. Lett. 69, 851 (1996). However, due to the doped manganese oxide at room temperature and low field conditions, its sens...
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