A Multi-valued Storage Unit Based on Co-control of Conductive Filament and Polarization

A technology of multi-value storage and conductive wire, which is applied in the field of information technology storage, can solve the problems of low storage density and Si process incompatibility, and achieve the effect of enhancing conductivity, reducing resistance and improving structure

Inactive Publication Date: 2018-03-30
XIANGTAN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] The present invention aims at the destructive reading of the existing ferroelectric memory, which requires the use of expensive electrode materials, and a series of problems such as the need for epitaxial growth films, low storage density, and incompatibility with Si technology. The purpose of the present invention is to provide a It can realize non-destructive reading, adopt non-epitaxial ferroelectric thin film, and has high storage density and multi-valued storage unit compatible with Si process. The ferroelectric memory unit enables the device to realize low voltage by adding a semiconductor functional layer Writing and reading, multi-value storage, overcomes the limitations of using epitaxial ferroelectric film, probe writing and reading multi-value storage, expensive substrate, expensive electrode material and incompatibility with Si process in the past, conducive to industrialization

Method used

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  • A Multi-valued Storage Unit Based on Co-control of Conductive Filament and Polarization
  • A Multi-valued Storage Unit Based on Co-control of Conductive Filament and Polarization
  • A Multi-valued Storage Unit Based on Co-control of Conductive Filament and Polarization

Examples

Experimental program
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Effect test

Embodiment 1

[0018] The prepared Ag / ZnO(2%Mn doped) / Pb(Zr 0.52 Ti 0.48 )O 3 / Pt A multi-valued storage unit based on conductive filament and polarization co-control includes the following steps:

[0019] (1) Preparation of Pt top electrode substrate

[0020] The Si substrate coated with the Pt bottom electrode was cleaned and dried.

[0021] (2) Pb(Zr 0.52 Ti 0.48 )O 3 Ferroelectric thin film

[0022] In a vacuum chamber, the Pb(Zr 0.52 Ti 0.48 )O 3 The target is installed on the target rack, and the mechanical pump and the molecular pump are turned on in turn to vacuumize. Wait until the pressure in the vacuum chamber reaches 1×10 -6 At about mTorr, place the cleaned Pt substrate on the substrate holder, and adjust the distance between the substrate and the target to be 60 mm. Evacuate the pressure in the vacuum chamber to 3×10 -4 Pa, turn on the KrF solid-state laser (wavelength: 248 nm), adjust the laser single pulse energy to 200 mJ, and the laser repetition frequency to...

Embodiment 2

[0029] Prepared Ag / ZnO(Mn2%) / BiFeO 3 / Pt A multi-valued storage unit based on conductive filament and polarization co-control is similar to the main process in Example 1, the difference is that BiFeO 3 The preparation parameters are oxygen pressure 13Pa, deposition temperature 675°C, and the thickness is 2-5nm. In this embodiment, the storage of 4 different resistance states is realized.

Embodiment 3

[0031] Prepared Ag / ZnO(Mn2%) / BaTiO 3 / Pt A multi-valued storage unit based on conductive filament and polarization co-control is similar to the main process in Example 1, the difference is that BaTiO 3 The preparation parameters are oxygen pressure 2.6Pa, deposition temperature 675°C, and the thickness is 2-5nm. In this embodiment, the storage of 2-10 different resistance states is realized.

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Abstract

The invention relates to a multi-valued storage unit based on the co-control of conductive filaments and polarization. The multi-valued storage unit based on the co-control of conductive filaments and polarization consists of a bottom electrode, a ferroelectric functional layer, a semiconductor Functional layer and top electrode; the multi-value storage unit realizes the characteristics of multi-value storage through the migration of the top electrode metal atoms in the semiconductor functional layer, and the polarization reversal and oxygen vacancy concentration change of the ferroelectric functional layer, which can realize non- Destructive reading and high storage density, in addition to simple operation, low operating voltage, and compatible with Si process, can realize low voltage writing and reading, overcome the ferroelectric tunnel junction in the past using probes to write and read multiple values Storage, the use of expensive substrates, expensive electrode materials, and the limitations of incompatibility with Si technology, and the realization of multi-value storage, is conducive to the realization of industrialization.

Description

technical field [0001] The invention belongs to the field of information technology storage, and in particular relates to a multi-valued storage unit based on the co-control of conductive filaments and polarization. Background technique [0002] Non-volatile memory is a type of memory that can retain information even in a power-off state, and it has a large market share in electronic devices. However, the operating voltage, read / write time, fatigue resistance, and storage density of existing memories are approaching their physical limits. Ferroelectric memory has attracted extensive attention due to its advantages of fast read speed, low power consumption and high storage density. At present, the ferroelectric memory that has been commercialized is a destructive read device based on a capacitive structure. This destructive read method needs to rewrite the information state after reading, and the continuous erasing / rewriting process greatly reduces the The life of the stora...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L45/00
CPCH10N70/245H10N70/883H10N70/8836
Inventor 王金斌侯鹏飞钟向丽
Owner XIANGTAN UNIV
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