36results about How to "Low preparation requirements" patented technology

The present invention relates to double laser beam synchronizing welding method and apparatus for T-shaped joint. The present invention features that the laser beam from one laser source is split into two laser beams, which are focused onto two sides of the T-shaped joint with two independent welding heads, and two welding powder feeders are used to convey powder to two sides of laser molten pool for sync welding. For realizing the said sync welding, one welder is proposed, which has one laser to produce main laser beam, one laser splitting and focusing unit to form two sync laser beams, and one powder feeder to produce two powder flows. The sync welding from two sides of the T-shaped joint results in high welding efficiency, and simultaneous cooling and contraction of two-in-one molten pool favorable to control in the stress and deformation.

The invention provides a fluorescent mark immunity test strip detector, belonging to the technical field of fluorescent mark immunity sample test strip detection. The structure comprises an optical system, a testing jig (1), a shell (8), a data collecting system and a control system; wherein the optical system comprises an excitation light source (3), a light filter (4) and a dim light CCD sensor (6); the data collecting system consists of a dim light CCD sensor data collecting circuit and a PC; the control system comprises a light reverse feed back constant light intensity automatic control circuit. Two excitation light source modes are provided in the invention, the excitation of 2-4 types of wave length can be switched, the structure is simple and reasonable, the operation is convenient and the different test requirements can be satisfied; the detailed distribution condition of the two fluorescent mark lines of a testing zone and a quality control zone on the test strip can be attained in one step; the image brightness of the CCD fluorescent mark line can be enhanced; the testing sensitivity can be improved; and the testing period of the test strip is shorter than 1min.

The invention discloses a multi-diameter rock core dual-ring direct tension rock tensile strength tester. The tester comprises three parts such as a loading system, a pressure monitoring and data acquisition system and a loading rack and sample clamping system. The loading system comprises an upper pressure disc, a ball head, a ball seat, a tower-shaped spring, a spherical hinge end cover, an oil cylinder, a lower pressure disc, a guide sleeve and a guide plate. The pressure monitoring and data acquisition system comprises a sensor and data acquisition subsystem, a pressure digital display screen, a monitoring compression gauge and a notebook computer data acquisition subsystem. The loading rack and sample clamping system comprises a diameter-variable rock sample inner ring pressure disc, a diameter-variable rock sample outer ring pressure disc, a lower crossbeam, stand columns, stand column fixed rings and an upper crossbeam. The tester can monitor and record the whole rock sample drawing damage test process, fast determine a tensile strength quantitative value in direct drawing of a rock, has a rigorous and reliable test principle and process and fill a gap in the research field at home.

The invention relates to a zirconium base amorphous composite material, containing a main material shown as the general formula: [(Zr1-xHfx)52Al10Cu30.5(Ni1-yFey)7.5)100-a-bYaMb, wherein x is the ratio of the atomic number of Hf to the total atomic number of Hf and Zr, and x ranges from 0 to 0.3; y is the ratio of the atomic number of Fe to the total atomic number of Fe and Ni, and y ranges from 0 to 0.3; a is the atomic percentage of Y, b is the atomic percentage of M, a is more than 0 and less than or equal to 8, and b is more than or equal to 0.01 and less than or equal to 15; M is one or more of La series metal elements, Ti, V, Nb, Ta, Cr, Mo, W, Mn and Si; and by taking the total volume of the zirconium base amorphous composite material as a reference, the content of an amorphous phase in the amorphous composite material is 50-95%, and the content of a crystalline phase is 5-50%. The zirconium base amorphous composite material provided by the invention has good comprehensive performance..

The invention relates to a method for etching gallium nitride nano-wire array by using a dry method, which is characterized in that nano-particle lattice of metal Ni is taken as a mask film and the nano-particle lattice of Ni is manufactured by anodic alumina; in the manufacture of the nano-particle lattice of the GaN, first, a layer of metal As is deposited on a GaN template; second, vesicular anodic alumina is generated by adopting an electrochemical method; then, an electron beam evaporates a layer of metal Ni layer and the anodic alumina is removed by alkaline liquor. As pore arrangement and aperture size of the anodic alumina are uniform, the nano-particle lattice of the metal Ni can be obtained on the GaN template. Then, the template is placed in inductively coupled plasma or a reaction chamber reacting ion etching to be etched; at last, Ni nano-particle is removed by acid to obtain the nano-wire array of GaN. The method provided by the invention is simple and easy and the manufactured nano-wire array of GaN is applicable to the manufacture of photoelectric devices such as LED or LD.

The invention provides a continuous detector for multi-wavelength excited fluorescence labeling immune test strips and belongs to the technical field of fluorescence labeling immune sample detection. The continuous detector consists of a mechanical transmission system, an optical system and an image acquisition system. Fluorescence labeling immune test strips in a test strip placing groove (17) fall into a test strip chute (3) and are pushed to a light source turntable (18) by a rotating chute disk (1) to be detected. An LED excitation light source (12), a slit (13) and a light filter (14) are mounted at the rectangular hole in the light source turntable (18), and fluorescent light is subjected to stray light filtration, focused by a focusing lens (15), then received by a CCD linear array sensor (16) and finally treated by the image acquisition system to realize detection of the immune test strips. The continuous detector has the advantages that continuous on-line detection and different-wavelength fluorescence test strip detection are achieved, light intensity control is realized to lower the test strip preparation demands, noise is eliminated effectively, the wave crests of the detected fluorescent light are accurately read, and the detection precision is improved.

The invention relates to a method for controlling the hardness of low-alloy high-strength steel laser composite welds, which belongs to the technical field of welding engineering. In the invention, consumable electrode arc is positioned before the laser focus along the welding direction, the distance between the consumable electrode arc and the laser focus is controlled, so as to lead interaction to be maintained between the laser induced plasma of the laser and the plasma of the consumable electrode arc and to form a molten pool; the molten pool is shallow in the covering area of the consumable electrode arc, and deep in the laser induced plasma area; non-consumable electrode arc is positioned behind the laser focus along the welding direction, the distance between the non-consumable electrode arc and the laser focus is controlled, so that no marked interaction can appear between the laser induced plasma and the plasma of the non-consumable electrode arc, and simultaneously the non-consumable electrode arc is stably burnt with the assistance of the laser induced plasma. The method enhances the absorbing capacity of a work piece to the laser power, improves the bridging capability of laser welding, reduces the cooling rate of the welding seam and the microhardness of the connector, and improves the mechanical properties of the welding seam.

The invention provides a contact angle measuring instrument which comprises a mounting structure (10), a light source (20), an imaging device (30) and a loading structure (40). The light source and the imaging device are arranged at intervals on the mounting structure. The loading structure is movably arranged between the light source and the imaging device in the horizontal direction. The loading structure (40) comprises an objective table (41) used for placing samples and also comprises an angle adjustment structure (42) arranged below the objective table (41). The angle adjustment structure (42) enables the objective table (41) to be angle-adjustably arranged between the light source (20) and the imaging device (30). By the technical scheme, problems of a contact angle measuring instrument in the prior art, such as difficulty in image analysis in later stage and large measurement error, can be effectively solved.

A routing-free LED packaging structure and a preparation method therefor are disclosed. The routing-free LED packaging structure comprises an LED chip and a die-bonding substrate; the LED chip is arranged on the die-bonding substrate in a side-down manner; the LED chip and the die-bonding substrate are glued through insulation die-bonding adhesive; the side face of the side-down LED chip is coated with the insulation die-bonding adhesive; conductive silver adhesive for enabling the LED chip and the die-bonding substrate to be electrically communicated is coated on the insulation die-bonding adhesive on the side face of the LED chip; the LED chip is arranged in the side-down manner; the LED chip is glued on the die-bonding substrate through the insulation die-bonding adhesive; meanwhile, the insulation die-bonding adhesive is coated on the periphery, the side faces and the bottom of the side-down LED chip and then the LED chip is roasted and cured; the conductive silver adhesive is dispensed on the insulation die-bonding adhesive on the side face of the LED chip and then the LED chip is roasted and cured; and the LED chip is wrapped with potting adhesive. According to the preparation method, the LED chip is arranged in the side-down manner, and then die-bonding for two times by the die-bonding glue is performed, so that the purpose of electrically communicating the chip with the die-bonding substrate is fulfilled, and meanwhile, the light-emitting of the chip is reinforced, the packaging process is simple and the yield of the packaged product is high.

The invention relates to a cellulose microsphere with uniform size, and a preparation method thereof. The preparation method comprises: atomizing cellulose dissolved in an alkali solution into small liquid droplets, making the small liquid droplets contact a high-temperature hot gas flow to cure, washing, and drying to obtain the regular spherical particles with uniform size and highly concentrated particle size distribution. With the method of the present invention, the influence of the surface tension of the traditional curing agent solution on the shape and the structure of the microsphereparticles is avoided, the addition of the emulsifier is not required during the preparation of the cellulose solution, the product contains less impurities, and the cost is low, such that the method is suitable for industrialization.

The invention discloses a spicy green pepper sauce and a preparation method thereof, and belongs to the technical field of chili sauce production and processing. The preparation method comprises the following raw materials in parts by weight: 56-80 parts of dried chilies, 3-5 parts of pickled chilies, 2-4 parts of pickled gingers, 2-4 parts of pickled capsicum frutescens, 9-11 parts of garlic, 15-23 parts of Chinese prickly ash, 56-68 parts of vegetable oil, 5-8 parts of thick broad-bean sauce, 3-5 parts of chicken essence seasoning, 2-4 parts of monosodium glutamate, 1-3 parts of cooking wine, 1-3 parts of soy sauce, 3-5 parts of spices, 2-4 parts of sesame seeds, 4-6 parts of white granulated sugar, 1-3 parts of salt and 0.5-1.5 parts of food additives. The spicy green pepper sauce and the preparation method thereof provided by the invention have the advantages that the ratio is reasonable, the taste is mellow, the color, fragrance and taste are good, the seasoning requirements of mixing noodles, mixing rice, dipping sauce, cooking dishes and steaming fish in daily diet of people loving to eat spicy peppers can be met, the application range is wide, and thus the applicable crowd is expanded.

The invention discloses a torasemide raw material. The torasemide raw material is prepared from the following components in parts by weight: 40-60 parts of torasemide and 3-10 parts of citric acid. According to the torasemide raw material, the requirements for the preparation process can be reduced, the production of too many related substances can be avoided, and the quality stability of productsis improved. The invention further provides a preparation method of the torasemide raw material.

In procedure for preparing GaN film through HVPE, an Al film layer is deposited on GaN template. Next, after anodic oxidation of electrochemical method, even porous meshy anodic alumina is formed. Then, GaN layer is developed in HVPE system. Porous anodic alumina can be used as mask in micro area since its pore diameter is small (10nm-200nm), pores are steep and distributed evenly. Because of selectivity of epitaxy in vapor phase, GaN is developed at lower layer of GaN in HVPE growth. Then, through procedure of lateral epitaxial growth, integrated GaN film is connected and formed. Advantages are: lowering dislocation density of GaN in growth, raising quality of GaN layer The invention simplifies technique for preparing mask through photo etching and is suitable to mass production.

The present invention features that during hydride vapor phase epitaxy (HVPE) of preparing GaN film, low temperature AlN insert layer structure is adopted. During HVPE of preparing GaN film, one AlN film is first low temperature deposited, and after high temperature annealing, further HVPE grows GaN layer. The introduction of low temperature AlN insert layer releases the stress of GaN film further growing on the low temperature AlN insert layer to raise the quality of GaN film. The method is simple and feasible, and has no strict requirement on the crystallization quality of low temperature AlN insert layer. The method may be adopted in scientific experiment and mass production, and the AlN layer may be prepared through chemical vapor phase deposition, molecular beam epitaxy, sputtering or other process.