Growth of SiO2 nanometer mask in gallium nitride film by HVPE method and method thereof

Abstract

The invention relates to a silicon dioxide nano particle dot matrix mask used in a GaN film of hydride gas phase epitaxial growth, and a preparation method thereof, characterized by that a SiO2 nano particle lattie is used as a mask for GaN transversely epitaxial over growth. A layer of metal Al is evaporated by electron beam on a GaN form board firstly. Porous anode alumina (AAO) is prepared by electrochemistry then. A layer of dielectric SiO2 layer is deposited then. AAO is removed by acid solutionor aqueous alkali. Therefore, dot matrix distribution of SiO2 nano particle is obtained on the GaN form board. After cleaning treatment, the form board as a substrate is put in a HVPE reaction chamber for GaN thick film growth. The invention simplifies the photo-etching mask manufacturing technology greatly, and reduces the size of the mask to nanometer level, while metal Al and SiO2 layer can be prepared through electron beam evaporation and sputtering method for batched production.

Description

technical field [0001] The invention relates to a hydride vapor phase epitaxy (HVPE) method for growing SiO in gallium nitride (GaN) films 2 Nanoparticle lattice mask and its preparation method. The invention aims at improving the quality of epitaxially grown GaN materials, and belongs to the field of GaN film preparation. Background technique [0002] GaN material has excellent characteristics such as high luminous efficiency, high thermal conductivity, high temperature resistance, radiation resistance, acid and alkali resistance, high strength and high hardness. In recent years, it has attracted attention as the most advanced semiconductor material in the world. , green, purple, white light-emitting diodes and lasers, GaN has received more applications and attention. However, currently GaN still relies on Al 2 o 3 , GaAs, SiC, Si and other heterogeneous substrates, due to their large lattice mismatch and thermal expansion mismatch coefficients with GaN materials, in th...

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Problems solved by technology

In addition, there are many methods to reduce the dislocation density, but they are all similar to the lateral epitaxy overgrowth (ELOG) technology, but most of them require photolithography and other processes, the process is complicated and the cost is high, and the traditional photolithography method is difficult to prepare nanometer scale mask structure

On the other hand, Benliang Lei et al. have used AAO as a mask to improve the quality of the epitaxial layer [Benliang Lei et al. Electronic and Solid-state Letters, 9(7)G242-G244, 2006], but due to the 2 o 3 It will change to chemically very stable α-Al at high temperature 2 o 3 , GaN may be directly epitaxially grown on its surface, thus affecting the quality of lateral overgrowth

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