Method for manufacturing gallium nitride nano-wire with tungsten auxiliary heat anneal

Abstract

The invention which relates to a method for preparing GaN nanometer lines by assisting the thermal annealing with tungsten is characterized by adopting the metallic tungsten (W) as a catalyst; in theprocess of preparing the GaN nanometer lines with the thermal annealing, a GaN nanometer line is formed through thermal annealing in the atmosphere of N2 after a thin W layer is evaporated from electron beams of a GaN template. The metallic tungsten thin film is introduced as the catalyst for the growth GaN nanometer lines, and the metallic W can aggregate at high temperature while the GaN at a lower layer is decomposed to cause the metallic W layer to form separate porous netted structure so as to expose partial GaN films, and at the same time, the separated metallic Ga and N atoms are combined into slender GaN nanometer lines under the effect of the catalyst of metallic W. The method is simple and easily implemented only by depositing or sputtering a thin metallic W layer and is suitablefor scientific experiments and batching production.

Description

technical field [0001] The invention relates to a preparation method for preparing gallium nitride (GaN) nanowires by tungsten-assisted thermal annealing. The invention aims at making high-quality, high-aspect-ratio GaN nanowires, and belongs to the technical field of material preparation. Background technique [0002] Low-dimensional structure semiconductor materials exhibit many excellent properties due to quantum effects, which has aroused great enthusiasm for research. Due to the confinement effect of the quantum size, the electronic energy state of the quantum wire material presents a V-shaped, T-shaped or oblique T-shaped energy level structure similar to atom splitting. Due to the separation of energy levels, quantum wire materials are more likely to meet the requirements of particle number inversion necessary for lasers, so they are suitable for making lasers. At the same time, quantum wires are used to make lasers. Due to the quantum confinement effect, the thres...

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Problems solved by technology

[0006] However, the above preparation methods have relatively high requirements on the reaction source, gas path structure and experimental equipment.

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