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A kind of silicon carbide surface treatment method

A surface treatment, silicon carbide technology, applied in electrical components, semiconductor/solid-state device manufacturing, circuits, etc., can solve the problems of poor controllability, high equipment requirements, and high use costs, and achieve low cost and good controllability.

Active Publication Date: 2017-11-14
BEIJING TIANKE HEDA SEMICON CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] Among them, wet etching has the advantages of high removal efficiency, simple operation, and low cost, but its controllability is poor, and it will produce corrosion pits and impurities that are difficult to remove on the surface.
Although the general dry etching has good controllability and clean substrate surface, it has high cost, strong gas corrosiveness, and high equipment requirements.
At the same time, the above two techniques for etching C-surface silicon carbide are not satisfactory in large-scale areas.

Method used

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  • A kind of silicon carbide surface treatment method
  • A kind of silicon carbide surface treatment method
  • A kind of silicon carbide surface treatment method

Examples

Experimental program
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Effect test

Embodiment 1

[0029] This embodiment provides a silicon carbide surface treatment method, as follows figure 2 The method is described in detail. The silicon carbide surface treatment method provided in this embodiment includes the following steps:

[0030] 1) Provide a 6H-SiC(000-1) silicon carbide wafer 1 of 2×2 square centimeters. Under normal temperature and normal pressure, the silicon carbide wafer 1 is ultrasonically cleaned with acetone and absolute ethanol in sequence, and cleaned with deionized water. , to remove the organic matter on the surface of the silicon carbide wafer 1 . Then use dilute hydrochloric acid, dilute hydrofluoric acid for further ultrasonic cleaning, and clean with deionized water to remove metal impurities and silicon dioxide oxide layer on the surface of silicon carbide wafer 1 . Finally, the cleaned silicon carbide wafer 1 is blown dry with nitrogen.

[0031] 2) Evenly put silicon carbide powder 2 with an average particle size of about 5 microns into the ...

Embodiment 2

[0037] This embodiment provides a silicon carbide surface treatment method, comprising the following steps:

[0038] 1) Provide a 4H-SiC(000-1) silicon carbide wafer 1 of 3×3 square centimeters. Under normal temperature and normal pressure, the silicon carbide wafer 1 is ultrasonically cleaned with acetone and absolute ethanol in sequence, and cleaned with deionized water , to remove the organic matter on the surface of the silicon carbide wafer 1 . Then use dilute hydrochloric acid, dilute hydrofluoric acid for further ultrasonic cleaning, and clean with deionized water to remove metal impurities and silicon dioxide oxide layer on the surface of silicon carbide wafer 1 . Finally, the cleaned silicon carbide wafer 1 is blown dry with nitrogen.

[0039] 2) Evenly put silicon carbide powder 2 with an average particle size of about 10 microns into the WC crucible 3 to ensure that the filling thickness of the silicon carbide powder 2 in the WC crucible 3 exceeds 1 mm, and then pu...

Embodiment 3

[0044] This embodiment provides a silicon carbide surface treatment method, as follows Figure 5 The method is described in detail. The silicon carbide surface treatment method provided in this embodiment includes the following steps:

[0045] 1) A 2-inch 6H-SiC (0001) silicon carbide wafer 21 is provided, and the silicon carbide wafer 21 is ultrasonically cleaned with acetone and absolute ethanol in sequence at room temperature and pressure, and cleaned with deionized water to remove silicon carbide Organic matter on the surface of the wafer 21. Then use dilute hydrochloric acid, dilute hydrofluoric acid for further ultrasonic cleaning, and clean with deionized water to remove metal impurities and silicon dioxide oxide layer on the surface of silicon carbide wafer 21 . Finally, the cleaned silicon carbide wafer 21 is blown dry with nitrogen.

[0046] 2) Evenly fill the silicon carbide powder 22 with an average particle size of about 20 microns into the graphite crucible 24...

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Abstract

The invention provides a silicon carbide surface processing method, comprising: placing silicon carbide powder and a silicon carbide crystal with surfaces to be processed in a vacuum cavity; and heating the silicon carbide powder to a first temperature in order to decompose the powder so as to form Si atmosphere, at least locating the surfaces to be processed of the silicon carbide crystal in the Si atmosphere, and heating the silicon carbide crystal to a second temperature so that the surfaces to be processed of the silicon carbide crystal and the Si atmosphere generate etching reaction.

Description

technical field [0001] The invention relates to a silicon carbide surface treatment method, in particular to a method for etching the surface of a silicon carbide wafer. Background technique [0002] Silicon carbide is one of the wide-bandgap semiconductor materials that has received widespread attention. It has the advantages of low density, large band gap, high breakdown voltage, good thermal stability, excellent frequency response characteristics, and good chemical stability. It is ideal for high-frequency, Ideal substrate material for high voltage, high power devices and blue light emitting diodes. In recent years, with the rise of graphene research, the use of silicon carbide epitaxial graphene has become one of the most promising methods to realize the application of graphene electronic devices. [0003] Silicon carbide wafers as homogeneous or heterogeneous epitaxial substrates are usually cut by mechanical methods and polished mechanically and chemically, such as f...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/04
CPCH01L21/306H01L21/3065H01L29/66053
Inventor 郭丽伟芦伟贾玉萍郭钰李治林陈小龙
Owner BEIJING TIANKE HEDA SEMICON CO LTD
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