Low temperature insert layer in gallium nitride film grown through hydride gas phase epitaxy and its preparing method

Abstract

The present invention features that during hydride vapor phase epitaxy (HVPE) of preparing GaN film, low temperature AlN insert layer structure is adopted. During HVPE of preparing GaN film, one AlN film is first low temperature deposited, and after high temperature annealing, further HVPE grows GaN layer. The introduction of low temperature AlN insert layer releases the stress of GaN film further growing on the low temperature AlN insert layer to raise the quality of GaN film. The method is simple and feasible, and has no strict requirement on the crystallization quality of low temperature AlN insert layer. The method may be adopted in scientific experiment and mass production, and the AlN layer may be prepared through chemical vapor phase deposition, molecular beam epitaxy, sputtering or other process.

Description

technical field [0001] The invention relates to a low-temperature insertion layer in a gallium nitride (GaN) film grown by a hydride vapor phase epitaxy (HVPE) method and a preparation method. The invention aims at improving the quality of epitaxially grown GaN film, and belongs to the technical field of material preparation. technical background [0002] In recent years, HVPE technology has been widely used in the preparation of GaN materials. Due to the high growth rate, simple equipment and low preparation cost of this material growth method, it is a main method for preparing self-supporting GaN substrates. At present, thick-film GaN substrates have been successfully prepared by using this method [R.J.Molnar et al.J.Cryst.Growth, V178, 147, 1997.]. Since the current HVPE epitaxial thick film GaN usually uses Al 2 o 3 , GaAs and other substrates, their lattice mismatch and thermal mismatch with GaN materials are relatively large, so there are large stress and high disl...

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Problems solved by technology

T.Paskova et al. used directly at the temperature of 1000 ℃ in Al 2 o 3 The AlN film sputtered on top serves as a buffer layer, which reduces the defect density in the GaN layer grown by HVPE, but the growth temperature of AlN is as high as 1000 °C, which requires high quality of the AlN film, and it is difficult to control the conditions during preparation; W. Zhang et al. The method of growth interruption has also greatly reduced the defect density in the GaN material grown by HVPE; but so far there are few reports on the use of low-temperature AlN insertion layers to reduce the defect density in HVPE grown GaN

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