262 results about "Porous anodic aluminum oxide" patented technology

PCT No. PCT/JP97/02965 Sec. 371 Date Nov. 2, 1998 Sec. 102(e) Date Nov. 2, 1998 PCT Filed Aug. 26, 1997 PCT Pub. No. WO98/09005 PCT Pub. Date Mar. 5, 1998A plurality of recesses having the same interval and array as those of pores of an alumina film, which are to be formed in anodizing, are formed on a smooth surface of an aluminum plate in advance, and then, the aluminum plate is anodized. With this process, the roundness of the pores of the porous anodized alumina film and the uniformity of pore size are improved, and the pores are regularly arrayed at a predetermined interval. The recesses are formed by pressing a substrate having a plurality of projections on its surface against the aluminum plate surface to be anodized.

The present invention relates to controlled growth of carbon nanotube (CNT) arrays via chemical vapor deposition (CVD) using novel porous anodic aluminum oxide (AAO) templates, which have been seeded with transition metal catalysts. The resulting CNT bundles may be dense and long and can be used for numerous applications. Further, the porous AAO templates and the CNTs grown thereby, can be functionalized and used for separation of chemical species, hydrogen storage, fuel cell electrocatalyst and gas flow membranes, other catalytic applications, and as a bulk structural material.

The invention relates to an intensive anodic oxidation process to prepare porous anodic alumina film. An aluminum sheet is as an anode; a platinum sheet as a cathode; argon as shielded gas; mixed solution of perchloric acid with absolute alcohol as electrochemical polishing compound for the aluminum sheet; mixed solution of oxalic acid, absolute alcohol and deionized water as electrolyte; and mixed solution of phosphoric acid, chromic acid and deionized water as alumina film corrodent. Through aluminum sheet annealing, purging, electrochemical polishing, mild anodic oxidation, corrosion on aluminum sheet oxide film, intensive anodic oxidation and stripping oxide film, and finally, pale yellow, high purity and ordered porous-structured nanometer-leveled alumina film is achieved; The alumina film pore is in circular shape sized in 30 to 35nm, pore distance in 80 to100nm and pore depth in 162.4 micrometers; growth rate of the alumina film is 54 micrometers/h, which is 27 times higher than 2 micrometers/h of growth rate of anodic oxidation aluminum film prepared through mild anodic oxidation process.

The invention discloses a modulation method for shape morphing of a hole of an anodic aluminum oxide template, which comprises the following steps: I. removing grease and dirt of the surface of annealing-treated or untreated aluminium foil, and then carrying out electrochemical polishing treatment on the aluminium foil for later use; II. forming pit patterns on the surface of the aluminium foil by adopting an electrochemical oxidation method or a hard template mechanical pitting method; and III. carrying out noncontinuous oxidation and chambering on the aluminium foil the surface of which is provided with the pit patterns in an acid electrolyte to form various three-dimensional morphing-type aluminum oxide nanopore array structures by the combination control of electrolyte composition, electrolyte temperature, oxidation voltage, oxidation and chambering frequency and oxidation and chambering time. The modulation method uses existing equipment, has simple implementation and can manufacture various three-dimensional morphing shape-adjustable porous anodic aluminum oxide templates in manner of low cost and big area.

The invention discloses a silver nanometer column array erected on the orifice of a porous alumina template and a preparation method and application thereof. The silver nanometer column array is characterized in that silver nanometer columns with the heights of 30-200 nanometers and the diameters of 30-60 nanometers are sequentially hexagonally arrayed on the periphery of the orifice of the porous anodic alumina template with taper holes; and silver nanometer particles with the particle size of 5-40 nanometers are attached to the walls of the taper holes. The preparation method comprises the following steps of: firstly placing an aluminum sheet into an oxalic acid solution, and carrying out anodization at direct-current voltage for at least 2 hours; then placing into a phosphorus-chromium acid mixed solution, and soaking for at least 3 hours to obtain an intermediate product; then firstly placing the intermediate product into the oxalic acid solution, carrying out the anodization at the direct-current voltage for at least 20 seconds, then placing the intermediate product into a phosphorus acid solution, and soaking for at least 1 minute; repeating the process for at least 10 times to obtain the alumina template with the holes in the shape of the taper holes; and then placing the alumina template into an ion sputter for silver sputtering so as to prepare a target product. The silver nanometer column array disclosed by the invention can be used as an active base of surface-enhanced Raman scattering; and the content of rhodamine or tetrachlorobiphenyl which is attached to the silver nanometer column array is measured by using a laser Raman spectrometer.

A preparation method of anodic aluminum oxide film with thick barrier layer is provided, which belongs to the field of material technology. The method comprises: the first-step oxidation: placing an aluminum foil (without annealing and electrochemical polishing treatment) in an acid electrolyte containing water or ethylene glycol as solvent, performing the first-step anodic oxidation in a constant current or voltage mode to obtain a porous anodic aluminum oxide film; the second-step oxidation: performing the second-step oxidation of the porous anodic aluminum oxide film produced by the first-step oxidation in a neutral electrolyte containing water or ethylene glycol as solvent in a constant current mode until the breakdown voltage is reached. With this preparation method, the aluminum oxide film has high specific surface area and thick barrier layer and simultaneously exhibits larger electrostatic capacitance and higher breakdown voltage, and is widely used in field of high-performance aluminum electrolytic capacitor and other micro-electronics.

The invention provides a method for preparing a graphene nanopore array, which comprises the following steps: 1) coating a carbon source solution on the surface of a porous anodic alumina (PAA) template; 2) pressing the PAA template with the carbon source coated on the surface (obtained in the step 1)) on the surface of a metal base, peeling the PAA template, and ensuring that the carbon source is reserved on the surface of the metal base and the carbon source reserves a pattern which is consistent with that on the surface of the PAA template; and 3) performing annealing treatment on the obtained metal base in the presence of a mixed gas flow of hydrogen gas and argon gas, thus converting the carbon source into the graphene nanopore array. The nanopore array obtained by the invention is an interconnected nanopore array structure rather other a single nanopore or several nanopores; and the pore size of the nanopores can be regulated through the template effect of the PAA itself, and can be further regulated through growing and etching in the later stage. Thus, the pore size controllability is very excellent.

The present invention relates to the field of porous anode alumina templates, particularly to a preparation method for an anode alumina template having a gradient nanometer pore size. According to the preparation method, a porous anode alumina template is immersed in an inorganic acid aqueous solution, and then is rapidly pulled out of the inorganic acid aqueous solution to obtain the anode alumina template having a gradient nanometer pore size, wherein the gradient nanometer pore size has a characteristic of large lower portion and small upper portion. According to the present invention, the preparation method has characteristics of convenience and rapidness, and various anode alumina templates having different gradient pore size changes can be prepared by changing the concentration and the temperature of the inorganic acid aqueous solution, and the pulling-out time.

The invention discloses a method for preparing highly ordered porous anodic alumina films in superhigh speed, relating to the application fields including the surface treating field of nonferrous metal and the preparation and application field of new materials in nanometer structures. Aluminum materials are used as anodes without high-temperature annealing or chemical polishing, a mixed solution containing oxalic acid, aluminum sulfate and ethylene glycol is used as an improved oxalic acid electrolyte system, the primary electrolysis is performed in the common technology, the secondary electrolysis is performed at the electrolyte temperature of 25 to 65 DEG C and under the direct-current electrolytic voltage of 30 to 50V after an oxide layer formed by the primary electrolysis is removed, and then the superhigh-speed growing method of porous anodic alumina films is directly realized; the growing speed is from 20 to 200 mum/h and is 10 to 50 times higher than that of the common technology for preparing the highly ordered porous anodic alumina films. The method does not need complicated thermal annealing and polishing, low-temperature requirements or high voltage and only needs a common water bath to stably prepare the highly ordered porous anodic alumina films in superhigh speed in a very wide temperature range.

A preparation method of an anti-reflecting film with a sub-wavelength structure in the field of chemical industry comprises the following steps: step 1: a silicon chip is washed, heated and cooled to the room temperature; step 2: a porous anodic aluminum oxide template is washed and a release agent is coated on the porous anodic aluminum oxide template by vaporization; step 3: the silicon chip is slowly rotated to evenly spread a photoresist on the surface of the silicon chip, and then rotated at a high speed to remove the excessive photoresist and obtain the thinner and even photoresist; step 4: the porous anodic aluminum oxide template on the surface of which the release agent is coated by vaporization is aligned with the silicon substrate rotatably coated with the photoresist with even thickness, and then the porous anodic aluminum oxide template is pressed into the photoresist layer, and the photoresist is exposed and solidified with an ultraviolet light source; and step 5: after solidification, the porous anodic aluminum oxide template is scaled off, and the obtained photoresist is the anti-reflecting film. The anti-reflecting film prepared by the method has good antireflecting effect on broad band light.

The invention discloses a tapered super-surface structure based photovoltaic photoelectric detector and a preparation method thereof. The photoelectric detector comprises a metal substrate whose surface includes a 3D nanometer cone array structure, a semiconductor file layer whose forbidden band width is greater than incident photon energy, and a metal film layer; and the metal substrate, the semiconductor film layer and the metal film layer are arranged successively from bottom to top. The preparation method comprises that a porous anodised aluminum film is prepared on the aluminum substrate, the anodised aluminum film in the surface of the aluminum substrate is removed, and the semiconductor film layer and the metal film layer are prepared then. The metal substrate, the semiconductor film layer and the metal film layer for the super-surface structure, the thickness of the metal film layer, the material thickness of the semiconductor layer or a structural parameter of a nanometer cone is controlled to regulate and control the frequency range of super-absorption. The photoelectric detector is simple in preparation technology, convenience is provided for large-area preparation, complex micro nano processing is not needed, and high-effeminacy broadband wide-angle photoelectric detection can be realized.

The present invention relates to a sensor chip for biomedical and micro-nano structured substances and a method for manufacturing the same. The sensor chip includes plural metal nanoparticles and a porous anodized aluminum oxide film. The plural metal nanoparticles are completely contained in holes of the porous anodized aluminum oxide film and located at the bottom of the holes, and an aluminum oxide layer covering the second end of the holes has a thickness of 1 nm to 300 nm. When analytes such as biomedical molecules are provided in contact with the sensor chip, a Raman signal can be detected based on the Raman spectroscopy. The structure of the sensor chip of the present invention is uncomplicated and the manufacturing steps thereof are simple, and therefore the sensor chip of the present invention is of great commercial value. Also, a method of manufacturing the above sensor chip is disclosed.

The invention belongs to the field of lithium ion batteries and discloses a preparation method for a silicon-carbon composite nano tube array. The preparation method for the silicon-carbon composite nano tube array is characterized by comprising the following steps: raising the temperature of a porous-anode aluminum oxide template under inert gas; introducing acetylene gas; generating a carbon nano tube array on the surface of the template by high-temperature gas-phase decomposition of acetylene; vacuumizing and introducing the inert gas, hydrogen and silane after the temperature is raised; decomposing silane to obtain a coaxial carbon nano tube and silicon nano tube array in the template; and removing silicon oxide on the surface of the template by using a hydrofluoric acid aqueous solution and drying to obtain the silicon-carbon composite nano tube array. According to the preparation method for the silicon-carbon composite nano tube array, the silicon-carbon composite nano tube array with controllable pipe diameter, pipe length and wall thickness, and uniform size can be obtained by two-step chemical vapor deposition and hydrofluoric acid corrosion; in a whole production process, complicated equipment is not used and process steps are simple, so that large-scale industrial production is facilitated; the stability of the silicon-carbon composite nano tube array is good.

The invention relates to a method used mixed acid electrolyte to manufacture high ordered multi-hole anodic alumina die plate. In order to further reduce oxidation voltage, barrier layer thickness, and increase nanometer hole array orderliness, the alumina die plate is manufactured as follows: using the mixed acid of sulfuric acid and oxalic acid as electrolyte; their content are 100-200g/L and 50-150g/L; de-oiling; oxide layer removing; electro polishing; double steps anodic oxidation manufacturing multi-hole anodic alumina die plate. The invention reduces reduce oxidation voltage and barrier layer thickness to make nanometer hole diameter rise from 20nm to 45-55nm. This is good for the further application of multi-hole alumina die plate.

In one embodiment, SWNTs are synthesized from an embedded catalyst in a modified porous anodic alumina (PAA) template. Pd is electrodeposited into the template to form nanowires that grow from an underlying conductive layer beneath the PAA and extend to the initiation sites of the SWNTs within each pore. Individual vertical channels of SWNTs are created, each with a vertical Pd nanowire back contact. Further Pd deposition results in annular Pd nanoparticles that form on portions of SWNTs extending onto the PAA surface. Two-terminal electrical characteristics produce linear I-V relationships, indicating ohmic contact in the devices.

The invention discloses a method for preparing a porous anodic alumina film by using industrial pure aluminum. By controlling process conditions such as voltage, electrolyte category, temperature, concentration and the like, a nano-scale porous alumina template with narrow diameter distribution range is prepared. The method is carried out in ice-water bath, and has the advantages of low used raw material cost, simple equipment, convenient operation and easy control; and the hole diameter of the alumina template obtained by the method is about 50 to 60 nanometers, and is evenly distributed.

The invention relates to a fabricating method of a soft template with a nanometer structure, which is characterized in that the soft template is duplicated by a porous anodic aluminum oxide template. The pore diameter of porous anodic aluminum oxide is usually 10-500 nm, holes of the porous anodic aluminum oxide are straight and are evenly distributed, the porous anodic aluminum oxide template can be used as a mother template and can be duplicated to form the soft template with high resolution and high duplication accuracy, therefore, the fabricating cost and the fabricating period of the template are reduced. The invention has the remarkable characteristics of low fabricating cost of the template, short period and simple process, and can realize large-area impression because the duplicated soft template can be repeatedly used.

The invention discloses a method for preparing an indium/tellurium porous nanowire array, and belongs to the technical field of preparation of porous materials and nano materials. The method is characterized by comprising the following steps: preparing a porous anode alumina template (PAA) by using a two-step anodization method, preparing an electrolytic deposition solution consisting of a high-purity In salt or compound, a salt or compound of Te, a pH conditioning agent, an additive and deionized water, and performing electrochemical deposition on In and Te elements in pore canals of the alumina template by adopting a pulse electrochemical deposition technology, using the electrolytic deposition solution containing the In and Te elements and taking metal-sprayed PAA template as an anode and graphite as a cathode under certain deposition parameters and conditions, so as to finally obtain a one-dimensional ordered In/Te porous nanowire array. The method has the effects and benefits that the preparation is simple, the cost is low, and components and structures are easy to regulate and control; the array has a significant potential application prospect in fields of energy, catalysis, adsorption, thermoelectricity, optics, electrics and the like, and particularly has great values in application of sensors.