Method for preparing anode aluminum oxide thin film with thick barrier layer

A technology of anodized aluminum and anodic oxidation, which is applied in the field of materials, can solve problems such as breakdown, and achieve the effects of high breakdown voltage, wide application prospects, and high specific surface area

Inactive Publication Date: 2008-01-16
SHANGHAI JIAO TONG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, this barrier layer structure with only a...

Method used

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Examples

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Embodiment 1

[0020] This embodiment 1 is implemented under the following conditions of implementation and technical requirements:

[0021] In the first step, the aluminum foil that has not been annealed and electrochemically polished is placed in a 6% phosphoric acid solution with ethylene glycol as a solvent for the first anodic oxidation, the temperature is 5 ° C, and the current density is constant at 5 mA cm -2 , the oxidation time is 300s.

[0022] In the second step, the porous anodic aluminum oxide film obtained by the above oxidation is cleaned with deionized water, and the second step of anodic oxidation is carried out in a 5% ammonium sebacate solution with ethylene glycol as a solvent, and the temperature is 50 ℃, the current is constant at 5mA cm -2 , until the breakdown voltage (450V) is reached. In this process, under the action of electric field, Al 3+ Migrate to the electrolyte / oxide film interface, O 2- / OH - Migrating to the oxide film / metal interface, the aluminum o...

Embodiment 2

[0025] This embodiment 2 is implemented under the following conditions of implementation and technical requirements:

[0026] In the first step, the aluminum foil that has not been annealed and electrochemically polished is placed in a 6% oxalic acid solution with ethylene glycol as a solvent for the first anodic oxidation, the temperature is 10 ° C, and the current density is constant at 5 mA cm -2 , the oxidation time is 600s.

[0027] In the second step, the porous anodized aluminum oxide film obtained by the above oxidation is cleaned with deionized water, and the second step of anodic oxidation is carried out in a 5% ammonium sebacate solution with ethylene glycol as a solvent, and the temperature is 55 ℃, the current is constant at 7mA cm -2 , until the breakdown voltage (453V) is reached. In this process, under the action of electric field, Al 3+ Migrate to the electrolyte / oxide film interface, O 2- / OH - Migrating to the oxide film / metal interface, the aluminum ox...

Embodiment 3

[0030] This embodiment 3 is implemented under the following conditions of implementation and technical requirements:

[0031] In the first step, the aluminum foil that has not been annealed and electrochemically polished is placed in a 6% sulfuric acid solution with ethylene glycol as a solvent for the first anodic oxidation, the temperature is 25 ° C, and the current density is constant at 5 mA cm -2 , the oxidation time is 20min.

[0032]In the second step, the porous anodized aluminum oxide film obtained by the above oxidation is cleaned with deionized water, and the second step of anodic oxidation is carried out in a 5% boric acid solution with ethylene glycol as a solvent, the temperature is 60 ° C, and the current Constantly 10mA cm -2 , until the breakdown voltage (455V) is reached. In this process, under the action of electric field, Al 3+ Migrate to the electrolyte / oxide film interface, O 2- / OH - Migrating to the oxide film / metal interface, the aluminum oxide fi...

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Abstract

A preparation method of anodic aluminum oxide film with thick barrier layer is provided, which belongs to the field of material technology. The method comprises: the first-step oxidation: placing an aluminum foil (without annealing and electrochemical polishing treatment) in an acid electrolyte containing water or ethylene glycol as solvent, performing the first-step anodic oxidation in a constant current or voltage mode to obtain a porous anodic aluminum oxide film; the second-step oxidation: performing the second-step oxidation of the porous anodic aluminum oxide film produced by the first-step oxidation in a neutral electrolyte containing water or ethylene glycol as solvent in a constant current mode until the breakdown voltage is reached. With this preparation method, the aluminum oxide film has high specific surface area and thick barrier layer and simultaneously exhibits larger electrostatic capacitance and higher breakdown voltage, and is widely used in field of high-performance aluminum electrolytic capacitor and other micro-electronics.

Description

technical field [0001] The invention relates to a preparation method in the technical field of materials, in particular to a preparation method of an anodic aluminum oxide film with a thick barrier layer. Background technique [0002] In the past fifty years, anodized aluminum oxide film has been widely studied and applied in industrial production and scientific research. From the structure, the anodized aluminum oxide film can be divided into dense type and porous type. Dense oxide film is a kind of dense, amorphous and uniform aluminum oxide, which can be obtained by anodizing aluminum in neutral electrolyte. This aluminum oxide film has good dielectric properties and can be used as anode foil for aluminum electrolytic capacitors. Porous oxide film, consisting of a barrier layer close to the metal and an outer layer of porous alumina, can be obtained by anodizing aluminum in an acidic electrolyte. The distribution of micropores in the porous layer is highly ordered, sho...

Claims

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Application Information

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IPC IPC(8): C25D11/12
Inventor 李东栋姜传海蒋建华王晓燕任鑫
Owner SHANGHAI JIAO TONG UNIV
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