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Method for preparing indium/tellurium porous nanowire array

A porous nanowire and nanowire technology, applied in the field of porous materials and nanomaterial preparation, can solve the problem of not combining porous nanowires, and achieve the effects of composition and structure regulation, simple preparation, and easy composition and structure.

Inactive Publication Date: 2014-03-12
DALIAN UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, there is still no report on the preparation of porous nanowires combining indium and tellurium

Method used

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  • Method for preparing indium/tellurium porous nanowire array
  • Method for preparing indium/tellurium porous nanowire array
  • Method for preparing indium/tellurium porous nanowire array

Examples

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Embodiment 1

[0021] The PAA template was prepared by a secondary anodization method, and a gold film with a thickness of 100 nm to 200 nm was deposited on its backside and on the backside by sputtering evaporation as an electrode. An electrodeposition solution was then prepared, which consisted of TeO 2 , InCl 3 ·4H 2 O, tartaric acid, HNO 3 solution composition. 5mM TeO 2 Dissolved in a small amount of deionized water, at a constant temperature of 60 ℃, under the condition of magnetic stirring, add concentrated HNO dropwise with a dropper 3 After the solution became clear, the resulting solution was poured into a solution containing 2.5 mM InCl 3 ·4H 2 In the solution of O and 0.133M tartaric acid, the required electrolyte is obtained, and the pH value of the obtained electrolyte is 1. Using the pulsed electrochemical deposition method, the gold-sprayed PAA template was used as the anode, and the graphite was used as the cathode. The power was turned on, and the deposition potentia...

Embodiment 2

[0026] The PAA template was prepared by a secondary anodization method, and a gold film with a thickness of 100 nm to 200 nm was deposited on its backside and on the backside by sputtering evaporation as an electrode. An electrodeposition solution was then prepared, which consisted of TeO 2 , InCl 3 ·4H 2 O, citric acid, HNO 3 solution composition. 5mM TeO 2 Dissolved in a small amount of deionized water, at a constant temperature of 60 ℃, under the condition of magnetic stirring, add concentrated HNO dropwise with a dropper 3 After the solution became clear, the resulting solution was poured into a solution containing 2.5 mM InCl 3 ·4H2 In the solution of O and 0.133M citric acid, the required electrolyte is obtained, and the pH value of the obtained electrolyte is 1. Using the pulsed electrochemical deposition method, the gold-sprayed PAA template was used as the anode, and the graphite was used as the cathode. The power was turned on, and the deposition potential was ...

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Abstract

The invention discloses a method for preparing an indium / tellurium porous nanowire array, and belongs to the technical field of preparation of porous materials and nano materials. The method is characterized by comprising the following steps: preparing a porous anode alumina template (PAA) by using a two-step anodization method, preparing an electrolytic deposition solution consisting of a high-purity In salt or compound, a salt or compound of Te, a pH conditioning agent, an additive and deionized water, and performing electrochemical deposition on In and Te elements in pore canals of the alumina template by adopting a pulse electrochemical deposition technology, using the electrolytic deposition solution containing the In and Te elements and taking metal-sprayed PAA template as an anode and graphite as a cathode under certain deposition parameters and conditions, so as to finally obtain a one-dimensional ordered In / Te porous nanowire array. The method has the effects and benefits that the preparation is simple, the cost is low, and components and structures are easy to regulate and control; the array has a significant potential application prospect in fields of energy, catalysis, adsorption, thermoelectricity, optics, electrics and the like, and particularly has great values in application of sensors.

Description

technical field [0001] The invention belongs to the technical field of preparation of porous materials and nanometer materials, and relates to a method for preparing an indium / tellurium (In / Te) porous nanowire array. Background technique [0002] The development of novel synthetic methods for nanomaterials with controllable compositional shape and size is an important area of ​​nanotechnology research. The intrinsic properties of nanoscale materials mainly depend on factors such as their composition, structure size, and morphology. Therefore, inorganic nanomaterials with special morphologies have always been the research hotspots of materials scientists. Nanoporous material refers to a material with a large number of certain nano-sized pore structures and a relatively high specific surface area. Compared with bulk materials and general nanomaterials, nanoporous materials generally have the characteristics of low relative density, high specific surface area, heat insulation,...

Claims

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Application Information

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IPC IPC(8): C25D7/04C25D5/18C25C5/02B82Y40/00
Inventor 薛方红汪晓允黄昊董星龙
Owner DALIAN UNIV OF TECH
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