11results about How to "Overcome size" patented technology

The invention provides a design method of a variable-size variable-density lattice structure wing with optimized heat dissipation load, and relates to the technical field of aerospace engineering, and the design method comprises the following steps: S10: carrying out variable cross-section design on a D-type unit to obtain a variable cross-section D-type unit, taking the variable cross-section D-type unit as a lattice unit configuration, and filling the wing to form a skin lattice structure; the skin lattice structure of the wing comprises a skin and a lattice filling area; s20, cell element variable-size design is adopted for the dot matrix units, and variable-size dot matrix units are constructed; s30, according to the stress field of the wing, cell element variable-density design is adopted for the variable-size dot matrix units, and variable-size variable-density dot matrix units are constructed; and S40, establishing a wing configuration. The variable-cross-section D-type unit is used as a dot matrix unit configuration, deep coupling of integrated design of heat dissipation and bearing performance is achieved through variable-size and variable-density design, application scenes are flexibly adjusted, and complex working condition requirements are met.

The invention discloses a silicon nitride crystal based on a physical vapor transport method and a preparation method thereof, and the preparation method comprises the following steps: laying silicon nitride powder as a raw material at the bottom of a graphite crucible, fixing a seed crystal on a top cover of the crucible, placing the device in single crystal growth equipment, vacuumizing, heating to 1000-1300 DEG C, filling nitrogen to 800-1000 mbar, and preserving heat for 1-3 hours, the method comprises the following steps of: heating to the temperature of between 1,600 and 2,000 DEG C, inhibiting the decomposition of silicon nitride, continuously heating to the temperature of between 1,600 and 2,000 DEG C, adjusting the air pressure in equipment to 100 to 300 mbar, and promoting the silicon nitride to be decomposed into silicon steam and nitrogen. And controlling the temperature of a seed crystal area to be 1500-1700 DEG C and the axial temperature gradient to be 10-50 DEG C / cm, so that Si and N substances in a gas phase are crystallized on the surface of the seed crystal to generate a silicon nitride crystal. And after the crystal grows, filling inert gas and slowly cooling to room temperature to finally prepare the complete silicon nitride crystal. The preparation method disclosed by the invention is accurate in process and high in crystal quality, and the prepared silicon nitride crystal has the particle size of more than 500 microns and the purity of more than 5N, and is suitable for the field of application of high-end materials.

A large-diameter tension-compression decoupling fusion type linear separation device is composed of a separation ring, an inner supporting protection cover, an exploder base, an energy-gathered cutting rope assembly, a connecting fastener, an exploder and the like, an energy-gathered cutting rope is arranged in the protection cover, after the exploder transmits detonation energy to a cutting rope main charge through a detonation propagation assembly, a shaped charge cover is driven by detonation waves to form metal jet flow, and the metal jet flow is separated from the inner supporting protection cover. And the separation ring is cut and separated. According to the large-diameter tension-compression decoupling fusion type linear separation device, tension-compression decoupling is conducted on high-magnitude loads transmitted by a projectile body through tolerance control of the separation ring and the inner supporting protection cover, and the large-diameter tension-compression decoupling fusion type linear separation device has the advantages of being simple in structure, reliable in separation performance, high in bearing capacity, large in connection rigidity, light in weight, convenient and fast to install and the like.

This application provides a laser head mounting assembly and a laser engraving machine. The laser head mounting assembly includes a housing, a heat sink, and a laser module. The housing has a receiving cavity. The heat sink is located within the receiving cavity and is stationary relative to the housing. The laser module includes a laser generator and a laser output head. The laser output head is connected to the laser generator and receives the laser light generated by the laser generator to output laser light to the workpiece to be engraved. The laser generator is connected to the heat sink and suspended in the receiving cavity. The laser generator has a first mounting part, which is mounted on the heat sink and elastically abuts against the side wall of the heat sink facing the first mounting part. This maintains the elastic mounting state of the laser generator relative to the heat sink, ensuring the fit between the first mounting part and the heat sink, guaranteeing the installation stability of the laser generator relative to the heat sink, overcoming assembly tolerances and dimensional tolerances, and improving the installation convenience of the laser head mounting assembly.

A large-diameter tension-compression decoupling fusion type linear separation device is composed of a separation ring, an inner support protective cover, a detonator seat, an energy-gathering cutting cable assembly, a connecting fastener and a detonator, the protective cover is internally provided with the energy-gathering cutting cable, after the detonation energy is transmitted to the main charge of the cutting cable through the transmission assembly of the detonator, the shaped charge is driven by the detonation wave to form a metal jet to cut and separate the separation ring, the high-level load transmitted by the projectile body is tension-compression decoupled through the tolerance control of the separation ring and the inner support protective cover, and a large-diameter tension-compression decoupling fusion type linear separation device is given, which has the advantages of simple structure, reliable separation performance, high bearing capacity, large connection stiffness, light weight, convenient installation and the like.

The application relates to the field of boiler equipment construction, and discloses a multi-stage reference control anti-twisting hoisting method for a supercritical boiler spiral water-cooled wall, which comprises the following steps: demarcating a first-stage reference according to the column position of a boiler steel frame, and demarcating three-stage references on a spiral water-cooled wall module; hoisting a rigid beam into position, aligning the rigid beam according to the first-stage reference, and demarcating a second-stage reference on the surface of the rigid beam; hoisting the spiral water-cooled wall module into a field and suspending the spiral water-cooled wall module on the side of the rigid beam; applying a transverse traction force to the spiral water-cooled wall module through an operating chain fall, so that the spiral water-cooled wall module approaches the rigid beam until the three-stage reference and the second-stage reference meet preset alignment requirements; implementing temporary welding to fix the spiral water-cooled wall module and the rigid beam, and repeatedly executing the assembling steps in the height direction layer by layer. The application utilizes deformation absorption to cut off the physical path of the error transmission to high altitude, prevents the module from being twisted, and improves the assembling precision of the heating surface.

The present invention discloses a high-precision shunt welding tool, including a welding tool base plate for fixing the shunt assembly, a connecting plate assembly, a positioning plate assembly, a guide rod, a fixed guide rail slider assembly, a support block, a quick clamp and an insulating base plate; a connecting plate assembly is provided at one end of the welding tool base plate, and a support block and a quick clamp are provided at the other end; the positioning plate assembly, the fixed guide rail slider assembly and the shunt assembly are all installed between the connecting plate assembly and the support block; the fixed guide rail slider assembly, the guide rod, the positioning plate assembly, the support block and the quick clamp are all installed on the insulating base plate above the welding tool base plate. The present invention drives the positioning plate assembly to position the shunt assembly in the B direction and the A direction respectively by pulling the quick clamp, thereby ensuring the welding accuracy of the shunt assembly. The technical solution of the present invention can reliably position the shunt and adjust the welding accuracy and temperature, meeting the demand for welding shunts with complex structures and high dimensional accuracy requirements.

The invention provides a preparation method and application of a size-controllable high-crystallinity stannous niobate single crystal. The preparation method comprises the following steps: mixing stannous chloride, niobium pentoxide and halogenated metal salt by adopting a molten salt method to obtain a mixed salt, carrying out molten salt reaction on the mixed salt in an inert gas atmosphere, and annealing to obtain the high-crystallinity stannous niobate single crystal from the nanometer level to the micron level. According to the technical scheme, the metal salt with the low melting point serves as a reaction medium and is evenly mixed with niobium oxide and stannous chloride to be subjected to the molten salt reaction, the high-crystallinity stannous niobate single crystal material with the controllable size can be prepared by adjusting the technological conditions and the proportion of the raw materials in the reaction process, single crystals with the uniform size are obtained, and the preparation method is simple and easy to implement. The effective migration distance of carriers can be effectively controlled, so that the carriers can be transmitted to the surface of the single crystal from the inside to react, and stannous niobate single crystal materials with different sizes can be obtained according to actual requirements.

The present invention provides a compressor and a refrigeration unit with the effect of reducing the pressure drop of supplementary air. The compressor includes a shell, a compression chamber is formed inside the shell, and a supplementary air chamber is also provided on the shell. The compressor and refrigeration unit with the effect of reducing the pressure drop of supplementary air provided by the present invention directly provide the supplementary air chamber on the shell, which overcomes the problem in the prior art that an additional buffer tank is provided on the supplementary air pipeline to reduce the vibration caused by the supplementary air pipeline and increase the cost and size of the unit, effectively simplifies the unit structure, reduces the cost of the unit, and at the same time reduces the diameter of the connecting hole, reduces the connection time and the connecting area between adjacent tooth grooves, thereby reducing the problem of gas leakage between adjacent tooth grooves, thereby achieving the purpose of reducing pressure pulsation and reducing pressure drop, and improving the volumetric efficiency of the compressor during compression, thereby improving the efficiency of the compressor and the refrigeration unit.

The invention discloses a preparation method of a large-size graphene heat-conducting film. Before splicing, the graphene oxide film is clamped by two layers of tight polyester cloth, the graphene oxide film is placed in deionized water to be soaked, the cohesiveness of the graphene oxide film in the follow-up splicing process is effectively improved by means of the swelling capacity of graphene oxide in water, and finally the large-size graphene heat conduction film with the high tensile breaking strength is obtained. The limitation on the size and equipment in the preparation process of the graphene heat-conducting film in the prior art is overcome.

The invention provides a preparation method of NiP2 crystals, i.e., NiP2 single crystals with different sizes and shapes are successfully prepared by adopting oscillation type heating to control the nucleation number of the crystals and controlling the cooling rate at the same time. Belongs to the technical field of material science. The crystal growth method provided by the invention has the advantages of simple process, low cost and controllable crystal size and shape. The method not only solves the problem that the large-size NiP2 single crystal is difficult to grow, but also has great significance for the development of a traditional crystal growth technology and a semiconductor preparation process.