Strong anodic oxidation method for preparing porous pellumina

A technology of porous alumina and anodizing, applied in electrolytic coatings, surface reaction electrolytic coatings, coatings, etc., can solve the problem of slow growth rate of aluminum oxide film thickness

Inactive Publication Date: 2008-03-12
TAIYUAN UNIV OF TECH
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Problems solved by technology

[0005] Using sulfuric acid, oxalic acid, or phosphoric acid as the electrolyte, the anodizing method performed near the optimum value of the oxidation voltage is called mild anodization, or MA method for short. The disadvantage is that the porous aluminum oxide film is prepa

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  • Strong anodic oxidation method for preparing porous pellumina
  • Strong anodic oxidation method for preparing porous pellumina
  • Strong anodic oxidation method for preparing porous pellumina

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Embodiment Construction

[0112] The present invention will be further described below in conjunction with accompanying drawing:

[0113] As shown in Figure 1, it is a flow chart of the preparation process, and each preparation parameter must be strictly controlled and operated in sequence.

[0114] The chemical substances and materials required by the equipment must be strictly weighed, and must not exceed the maximum and minimum ranges.

[0115] The aluminum flakes required for the preparation of porous anodized aluminum membranes must be strictly selected, with a purity of 99.999%. The dimensions, specifications, and surface roughness of the aluminum flakes and platinum flakes must be consistent, so as not to affect the voltage transmission and stability of the cathode and anode.

[0116] The annealing of aluminum sheets should be carried out in a quartz tube annealing furnace under the protection of argon gas. The annealing temperature is 500°C±3°C. The temperature and time must be strictly control...

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Abstract

The invention relates to an intensive anodic oxidation process to prepare porous anodic alumina film. An aluminum sheet is as an anode; a platinum sheet as a cathode; argon as shielded gas; mixed solution of perchloric acid with absolute alcohol as electrochemical polishing compound for the aluminum sheet; mixed solution of oxalic acid, absolute alcohol and deionized water as electrolyte; and mixed solution of phosphoric acid, chromic acid and deionized water as alumina film corrodent. Through aluminum sheet annealing, purging, electrochemical polishing, mild anodic oxidation, corrosion on aluminum sheet oxide film, intensive anodic oxidation and stripping oxide film, and finally, pale yellow, high purity and ordered porous-structured nanometer-leveled alumina film is achieved; The alumina film pore is in circular shape sized in 30 to 35nm, pore distance in 80 to100nm and pore depth in 162.4 micrometers; growth rate of the alumina film is 54 micrometers/h, which is 27 times higher than 2 micrometers/h of growth rate of anodic oxidation aluminum film prepared through mild anodic oxidation process.

Description

Technical field: [0001] The invention relates to a strong anodic oxidation method for preparing porous aluminum oxide film, which belongs to the field of film forming technology on the surface of non-ferrous metal materials. Background technique: [0002] Aluminum is a relatively active metal, which can naturally form an oxide film with a thickness of several hundred nanometers in the air. This oxide film is amorphous, thin and porous, and has low mechanical strength, which cannot meet the requirements of functional applications. To obtain an oxide film layer with special functions, the aluminum surface must be treated. In the electrolyte, aluminum is used as an anode for electrolytic treatment to form an oxide film on the aluminum surface, which is called aluminum anodic oxidation. The anodic aluminum oxide film is divided into barrier type and There are two types of porous type. Usually, a dense barrier oxide film can be obtained by anodizing in a neutral electrolyte, whil...

Claims

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Application Information

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IPC IPC(8): C25D11/10
Inventor 许并社黄平梁建刘光焕杨冬刘旭光马淑芳
Owner TAIYUAN UNIV OF TECH
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