Method for producing antireflection film of subwavelength structure

Abstract

A preparation method of an anti-reflecting film with a sub-wavelength structure in the field of chemical industry comprises the following steps: step 1: a silicon chip is washed, heated and cooled to the room temperature; step 2: a porous anodic aluminum oxide template is washed and a release agent is coated on the porous anodic aluminum oxide template by vaporization; step 3: the silicon chip is slowly rotated to evenly spread a photoresist on the surface of the silicon chip, and then rotated at a high speed to remove the excessive photoresist and obtain the thinner and even photoresist; step 4: the porous anodic aluminum oxide template on the surface of which the release agent is coated by vaporization is aligned with the silicon substrate rotatably coated with the photoresist with even thickness, and then the porous anodic aluminum oxide template is pressed into the photoresist layer, and the photoresist is exposed and solidified with an ultraviolet light source; and step 5: after solidification, the porous anodic aluminum oxide template is scaled off, and the obtained photoresist is the anti-reflecting film. The anti-reflecting film prepared by the method has good antireflecting effect on broad band light.

Description

technical field [0001] The invention relates to a method for preparing a thin film in the technical field of chemical industry, in particular to a method for preparing an anti-reflection film with a subwavelength structure. Background technique [0002] Anti-reflection coatings are very important and widely used in optoelectronic devices such as photodetectors, solar cells, semiconductor lasers, and light-emitting diodes (LEDs). When light hits the surface of the optoelectronic device, if there is no anti-reflection treatment on the surface of the device, part of the incident light will cause Fresnel reflection due to the difference in refractive index between the materials on both sides of the interface, resulting in energy loss. For example, on the surface of a monocrystalline silicon solar cell without anti-reflection treatment, the energy loss due to reflection reaches more than 30%; a considerable part of the light emitted by the semiconductor material in the light-emit...

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Problems solved by technology

[0005] After the discovery of prior art literature, "Broadband antireflection gratingsfabricated upon silicon substrates" ("Preparation of wideband antireflection gratings based on silicon substrates")" (Optics Letters, 1999, 24: 1422-1425.) proposed Electron beam exposure and atomic beam etching were used to prepare SWS anti-reflective coatings, but this method has low yield and high cost, and is not suitable for large-scale production; after searching, it was also found that "Antireflective subwavelength structures oncrystalline Si fabricated using directly formed Anodic porous aluminum masks" ("Using anodized porous aluminum templates t

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