Application of alumina as mask for growing gallium nitride film by hydride vapour-phase epitaxial

A hydride vapor phase, epitaxial growth technology, applied in electrical components, semiconductor/solid-state device manufacturing, circuits, etc., can solve problems such as reducing the density of material growth defects, and achieve improved availability, low preparation requirements, and uniform distribution. Effect

Inactive Publication Date: 2010-01-13
DAHOM FUJIAN ILLUMINATION TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

But so far there is no report on the combination of the two, that is, the use of porous anodized alumin

Method used

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  • Application of alumina as mask for growing gallium nitride film by hydride vapour-phase epitaxial

Examples

Experimental program
Comparison scheme
Effect test

Example Embodiment

[0021] Example 1

[0022] Grown on Al by MOCVD 2 O 3 The GaN on the substrate is used as a template, and the thickness of the template is 20 microns. Then a 2μm thick metal Al thin layer is deposited on the template by electron beam evaporation at a temperature of 500 ℃, and then the template with the metal layer is put into oxalic acid The solution (0.3mol / L) was anodized at room temperature with a voltage of 40 volts for 40 minutes, and then the template was immersed in a phosphoric acid solution (5wt%) for 30 minutes to remove the part of the aluminum oxide at the bottom of the pore that was in contact with the lower layer of GaN. In this way, a micro-area mask for GaN growth is made. Then put the template into the HVPE reaction chamber, in the N 2 The atmosphere is heated to 800℃, and NH is passed through 3 The GaN layer of the protection template was grown by HCl at 1050°C. The sample measurement results show that the dislocation density of the GaN film grown by this method...

Example Embodiment

[0023] Example 2

[0024] Using HVPE grown on SiC substrate as a template, the template thickness is 100 microns, and then a 60nm Al film is deposited by sputtering method, and then a porous mesh alumina mask is made as described in Example 1 as the growth GaN mask.

Example Embodiment

[0025] Example 3

[0026] The MBE method was used to grow GaN as a template on a GaAs substrate with a thickness of 0.5 microns, and then an Al thin layer was grown using the method as in Example 1, the thickness of the Al film was 500nm, and the template was first placed in a sulfuric acid (15wt%) solution. Anodize, and then soak in a mixed solution of phosphoric acid and chromic acid for 30 minutes. The mixed solution is made up of 6 wt% phosphoric acid and 1.8 wt% chromic acid in a volume ratio of 1:1. The dislocation density of the finally grown GaN film is greatly reduced, which is similar to that described in Embodiment 1.

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Abstract

In procedure for preparing GaN film through HVPE, an Al film layer is deposited on GaN template. Next, after anodic oxidation of electrochemical method, even porous meshy anodic alumina is formed. Then, GaN layer is developed in HVPE system. Porous anodic alumina can be used as mask in micro area since its pore diameter is small (10nm-200nm), pores are steep and distributed evenly. Because of selectivity of epitaxy in vapor phase, GaN is developed at lower layer of GaN in HVPE growth. Then, through procedure of lateral epitaxial growth, integrated GaN film is connected and formed. Advantages are: lowering dislocation density of GaN in growth, raising quality of GaN layer The invention simplifies technique for preparing mask through photo etching and is suitable to mass production.

Description

technical field [0001] The invention relates to the application of porous anodic aluminum oxide (AAO) as a mask when growing a gallium nitride (GaN) film by a hydride vapor phase epitaxy (HVPE) method. The invention aims at improving the quality of epitaxially grown GaN materials, and belongs to the technical field of material preparation. Background technique [0002] In recent years, HVPE technology has been widely used in the preparation of GaN materials. Due to the high growth rate, simple equipment and low preparation cost of this material growth method, it is a main method for preparing self-supporting GaN substrates. At present, thick-film GaN substrates have been successfully prepared by using this method [R.J.Molnar et al.J.Cryst.Growth, V178, 147, 1997]. Since the current HVPE epitaxial thick film GaN usually uses Al 2 o 3 , GaAs and other substrates, their lattice mismatch and thermal mismatch with GaN materials are relatively large, so there are large stress ...

Claims

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Application Information

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IPC IPC(8): H01L21/31
Inventor 雷本亮于广辉齐鸣叶好华孟胜李爱珍
Owner DAHOM FUJIAN ILLUMINATION TECH
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