Nano composite phase-change material and preparation method thereof

A phase change material and nanocomposite technology, which is applied in the field of nanocomposite phase change materials and its preparation, can solve problems such as the influence of C-RAM device reliability, improve data retention capabilities, enhance dielectric properties and breakdown resistance, The effect of increasing heat capacity

Active Publication Date: 2009-09-02
SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
View PDF0 Cites 8 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In addition, larger grains are contradictory to the current trend of shrinking size in the research and development of phase change memory, and the emergence of large grains has a negative impact on the reliability of C-RAM devices

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Nano composite phase-change material and preparation method thereof
  • Nano composite phase-change material and preparation method thereof
  • Nano composite phase-change material and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

preparation example Construction

[0028] For the preparation of phase change composite materials, we can adopt the mixed preparation method of phase change materials and ferroelectric materials, and mix the phase change materials and ferroelectric materials evenly, so that the ferroelectric materials can evenly disperse the phase change materials into nanometer particles with uniform size and shape. size region, thereby limiting the reversible phase change of phase change materials to a tiny region.

[0029] In the material preparation process, the ferroelectric material is compounded in the phase change material, and the phase change material is evenly divided into regions with controllable size and shape by the ferroelectric material, so that the phase change of the phase change material is limited to a small area, and the growth of its grains is prevented. big. After the ferroelectric material is introduced, the obtained composite material maintains the original reversible phase transition characteristics. ...

Embodiment

[0038] Preparation of nanocomposite phase change materials—Ge by magnetron sputtering 2 Sb 2 Te 5 with Ba 0.5 Sr 0.5 TiO 3 complex.

[0039] 1) Clean two (100) oriented silicon substrates, prepare a 100nm thick tungsten electrode 2 on one of the silicon substrates 1, as Figure 1a shown.

[0040] 2) Deposit a silicon oxide layer 3 on the substrate with tungsten electrodes again, with a thickness of 100nm, such as Figure 1b shown.

[0041] 3) A small hole with a diameter of 200nm is carved on the silicon oxide by using the exposure-etching process. The exposure method used is electron beam exposure, and the etching method is reactive ion etching. The structure is as follows: Figure 1c shown.

[0042] 4) Prepare the nanocomposite phase change material 4 on the silicon substrate and the silicon substrate with tungsten electrodes. Using Ge 2 Sb 2 Te 5 alloy target and Ba 0.5 Sr 0.5 TiO 3 Thin films were prepared by simultaneous sputtering of two targets. During ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
Login to view more

Abstract

The invention relates to a novel nano composite phase-change material and a preparation method thereof. The nano composite phase-change material is characterized in that a phase-change material and a ferroelectric material are compounded, and the ferroelectric material separates the phase-change material into even nano-scale areas with controllable shapes and sizes so as to limit the phase change of the phase-change material within a small area; and simultaneously, because the ferroelectric material has good dielectric and insulating properties, the ferroelectric material enhances the dielectric property and breakdown resisting capability of the composite material, inhibits the growth of phase-change material crystals, promotes the specific resistance of the material, and increases the heat capacity of the material. The novel nano composite phase-change material applied to a memory is favorable for achieving high-density storage, improves heating efficiency during programming of a phase-change memory, reduces the power consumption of the memory, improves the storage speed, and promotes data retention capability, fatigue property, radiation resistance and the like.

Description

technical field [0001] The invention belongs to the technical field of microelectronics, and in particular relates to a nanocomposite phase-change material and a preparation method thereof. Background technique [0002] Phase change memory (C-RAM) is an emerging semiconductor memory, compared with the existing semiconductor storage technologies, including conventional volatile technologies, such as static random access memory (SRAM), dynamic random access memory (DRAM) ), etc., and non-volatile technologies, such as ferroelectric random access memory (FeRAM), electrically erasable programmable read-only memory (EEPROM), flash memory (FLASH), etc., have non-volatile, long cycle life ( >10 13 time), small component size, low power consumption, multi-level storage, high-speed reading, anti-radiation, high and low temperature resistance (-55-125 ° C), anti-vibration, anti-electronic interference and simple manufacturing process (can be compared with existing The integrated ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): H01L45/00C23C14/34C23C14/14C23C14/08
Inventor 宋三年宋志棠万旭东谢志峰封松林
Owner SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap