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A ferro-resistance variable memory and its writing method, reading method and preparation method

An iron resistance variable memory technology, which is applied to electrical components and other directions, can solve the problems of low storage density, increase the resistance ratio of high and low resistance states, and increase the storage window of the iron resistance variable memory, so as to increase the storage window, increase the The effect of the on-off ratio

Active Publication Date: 2021-10-19
SOUTH UNIVERSITY OF SCIENCE AND TECHNOLOGY OF CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] The invention provides a ferro-resistance variable memory and its writing method, reading method and preparation method, which increase the resistance ratio of the high and low resistance states of the switch layer under the action of an electric field, increase the storage window of the ferro-resistance variable memory, and solve the problem of Solve the problem of small storage window and low storage density of ferro-resistive variable memory at the present stage

Method used

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  • A ferro-resistance variable memory and its writing method, reading method and preparation method
  • A ferro-resistance variable memory and its writing method, reading method and preparation method
  • A ferro-resistance variable memory and its writing method, reading method and preparation method

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Embodiment 1

[0043] Usually, the conventional ferro-RRAM directly injects electrons from the top electrode (for example, a metal material layer) to the ferroelectric layer. When the material of the bottom electrode is the same, the conductivity of the top electrode determines the degree of difficulty of electron injection, that is The resistance ratio (R OFF / R ON ). The current RRAM R OFF / R ON less than 10 3 , that is, the storage window is small.

[0044] Wherein, the resistance ratio of the high and low resistance states of the switch layer determines the size of the storage window of the FRAM; meanwhile, the size of the storage window of the FRAM directly determines the storage density of the FRAM. Specifically, the greater the resistance ratio of the high and low resistance states of the switch layer is, the larger the storage window of the ferro-resistance variable memory is, and thus the higher the storage density of the ferro-resistance variable memory is.

[0045] Based on ...

Embodiment 2

[0082] Figure 10 It is a schematic flowchart of a writing method of a ferro-resistive variable memory provided in Embodiment 2 of the present invention, see Figure 10 , on the basis of the first embodiment above, the ferroelectric RRAM provided by this embodiment includes a substrate layer, a bottom electrode, a switch layer and a top electrode stacked in sequence; the switch layer includes a ferroelectric layer and is adjacent to the ferroelectric layer at least one semiconductor layer. The writing method of the ferro-resistive variable memory provided in this embodiment includes:

[0083] S210. Obtain a write instruction of the ferro-resistive variable memory.

[0084] Wherein, the write instruction refers to a machine instruction obtained by a control circuit connected to the ferro-resistive variable memory, which exemplarily includes corresponding instructions such as typing characters or pasting pictures, and the acquisition path exemplarily includes using a keyboard ...

Embodiment 3

[0093] Figure 11 It is a schematic flowchart of a method for reading ferro-resistive memory provided in Embodiment 3 of the present invention, see Figure 11 , on the basis of the first embodiment above, the ferroelectric RRAM provided by this embodiment includes a substrate layer, a bottom electrode, a switch layer and a top electrode stacked in sequence; the switch layer includes a ferroelectric layer and is adjacent to the ferroelectric layer at least one semiconductor layer. The writing method of the ferro-resistive variable memory provided in this embodiment includes:

[0094] S310. Obtain a read instruction of the FRAM.

[0095] Wherein, wherein, the reading instruction refers to a machine instruction obtained by a control circuit connected to the ferro-resistive variable memory, exemplarily including instructions corresponding to displaying characters, displaying pictures, playing audio and video, etc., and the obtaining path includes clicking the mouse and other ac...

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Abstract

The invention discloses a ferro-resistance variable memory, a writing method, a reading method and a preparation method thereof. The ferroelectric RRAM includes a substrate layer, a bottom electrode, a switch layer and a top electrode stacked in sequence; the switch layer includes a ferroelectric layer and at least one semiconductor layer adjacent to the ferroelectric layer; the iron The electric layer is polarized under the application of an electric field for changing the potential barrier of the switch layer. In the present invention, at least one semiconductor layer is added to the switch layer, and the semiconductor layer is adjacent to the ferroelectric layer, which is equivalent to adding a variable barrier layer, which increases the resistance ratio of the high and low resistance states of the switch layer under the action of an electric field , that is, the storage window of the ferro-resistive variable memory is increased, and the high-density storage of the ferro-resistive variable memory is realized, and the problem of a small storage window of the ferro-resistive variable memory is solved.

Description

technical field [0001] Embodiments of the present invention relate to the field of semiconductors and storage devices, and in particular to a ferro-resistive variable memory, a writing method, a reading method, and a manufacturing method thereof. Background technique [0002] Ferroelectric materials have two stable polarization states, and the ferroelectric switching rate is very fast under the action of an external electric field. Especially with the development of modern thin film technology, ferroelectric materials have been widely studied and applied. Ferromagnetic Random Access Memory (FRAM or FeRAM for short) is the earliest commercialized non-volatile memory, which mainly uses the two polarization states of ferroelectric materials to flip under the action of an applied electric field to encode the values ​​in Boolean algebra respectively. 0 and 1, to achieve information storage. [0003] The typical structure of FRAM at this stage is: top electrode-ferroelectric mate...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L45/00
CPCH10N70/801H10N70/011
Inventor 徐泽东陈朗
Owner SOUTH UNIVERSITY OF SCIENCE AND TECHNOLOGY OF CHINA
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