Polysilicon floating gate memorizer based on organic field effect transistor and preparation method therefor.

Abstract

The invention discloses a polysilicon floating gate memorizer based on an organic field effect transistor and a preparation method therefor. A gate electrode employs a heavy-doping low-resistance monocrystalline silicon substrate with a thickness of 100-300nm; a gate insulation dielectric layer is formed on the surface of the silicon substrate of the gate electrode; a polysilicon floating gate is embedded between the gate insulation dielectric layer and a tunneling insulation dielectric layer and employed as a charge storage unit; the tunneling insulation dielectric layer is formed on the surface of the floating gate; an organic semiconductor material is grown on the surface of the tunneling insulation dielectric layer and forms an active layer of a device; vacuum vapor plating of metal through metal masks is carried out on the surface of the active layer, and a source electrode and a drain electrode of the device are formed. The beneficial effects are that a work voltage of a floating gate memorizer based on an organic field effect transistor is decreased, high-density storage of a device is achieved, the device maintaining performance is raised, and the device manufacturing cost is lowered.

Description

technical field [0001] The invention belongs to the technical field of electronic components, and relates to a polysilicon floating gate memory based on an organic field effect transistor and a preparation method thereof. Background technique [0002] With the continuous development of electronic information technology, electronic information products have gradually penetrated into every aspect of people's life, work and study. People's demand for low-cost, low-power, portable and miniaturized electronic devices is increasing. The traditional silicon-based It is difficult for non-volatile memory to meet the above new requirements. Organic floating gate memory is a new type of organic electronic device developed based on organic thin film field effect transistor. Attention is a new type of electronic device with very promising application prospects in the future. [0003] The structure of organic floating gate memory is similar to that of organic field effect transistors (OF...

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Problems solved by technology

[0005] The purpose of the present invention is to provide a polysilicon floating gate memory based on an organic field effect transistor and a preparation method thereof, so as to solve the problems of high operating voltage and high manufacturing cost of the existing organic field effect transistor floating gate memory

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