The disclosure provides a piezoelectric magnetic
random access memory and a preparation method thereof. A piezoelectric film is deformed by applying a
voltage to both ends of a piezoelectric layer, and the deformation is transferred to a magnetic free layer to control the
magnetic moment of the magnetic free layer in a magnetic
tunnel junction to generate 90-degree or nearly 90-degree turning, including that the
magnetic moment of the magnetic free layer in a vertical
tunnel junction turns from the direction perpendicular to the surface of the layer to the in-plane direction (Vertical to Parallel, V-P type), or the
magnetic moment of the magnetic free layer has 90-degree or nearly 90-degree turning in the in-plane direction (Parallel to Parallel, P-P type); and by testing the change of thevoltage at both ends of the magnetic
tunnel junction, the change of the tunneling resistance is obtained, and the information is further written. The scheme of the disclosure no longer uses a traditional mode of realizing the
magnetization reversal of the magnetic free layer by using high-density current, effectively reduces the
energy consumption, effectively controls the
thermal effect, and further prolongs the
operating life of the device.