Piezoelectric magnetic random access memory and preparation method thereof

Abstract

The disclosure provides a piezoelectric magnetic random access memory and a preparation method thereof. A piezoelectric film is deformed by applying a voltage to both ends of a piezoelectric layer, and the deformation is transferred to a magnetic free layer to control the magnetic moment of the magnetic free layer in a magnetic tunnel junction to generate 90-degree or nearly 90-degree turning, including that the magnetic moment of the magnetic free layer in a vertical tunnel junction turns from the direction perpendicular to the surface of the layer to the in-plane direction (Vertical to Parallel, V-P type), or the magnetic moment of the magnetic free layer has 90-degree or nearly 90-degree turning in the in-plane direction (Parallel to Parallel, P-P type); and by testing the change of thevoltage at both ends of the magnetic tunnel junction, the change of the tunneling resistance is obtained, and the information is further written. The scheme of the disclosure no longer uses a traditional mode of realizing the magnetization reversal of the magnetic free layer by using high-density current, effectively reduces the energy consumption, effectively controls the thermal effect, and further prolongs the operating life of the device.

Description

technical field [0001] The present disclosure relates to the fields of information technology and microelectronics, and in particular, to a piezoelectric magnetic random access memory and a preparation method thereof. Background technique [0002] The currently commercially vigorously developed spin transfer torque-magnetic random access memory (STT-MARM) and the spin-orbit torque-magnetic random access memory (SOT-MRAM) still under laboratory research are both based on the magnetization of the magnetic free layer in the memory cell. The reversal of the magneto-resistance leads to the change of the magneto-resistance, thereby realizing the information storage function, which has the advantages of high speed and non-volatility. [0003] However, since the magnetization reversal of the magnetic free layer in this type of random access memory is realized by current, a very high current density is usually required (10 5 -10 7 A / cm 2 ) can be achieved, which not only leads to ...

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Problems solved by technology

[0003] However, since the magnetization switching of the magnetic free layer in this type of random access memory is realized by electric current, a very high current density (10 5 -10 7 A / cm 2 ) can be realized, which not only leads to excessive energy consumption, but also the thermal effect will greatly reduce the service life of the storage unit

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