A magnetic tunnel junction device and a magnetic random access memory device thereof

Abstract

A magnetic tunnel junction device and a magnetic random access memory device thereof are disclosed, The device relates to an artificial antiferromagnetic device capable of assistingturnover of a freemagnetic layer and a fixed magnetic layer, wherein the artificial antiferromagnetic device can realize the transition from the antiferromagnetic state to the ferromagnetic state through the electric field control, and cooperates with the fixed magnetic layer to assist the free magnetic layer to turn over. A magnetic random access memory device include a magnetic tunnel junction through which a current passes and that free magnetic lay flips under the assistance of an electric field. After the free magnetic layer flips, the electric field is removed, and the composite multilayer structure is returned to the antiferromagnetic state from the ferromagnetic state, while the free magnetic layer remains in the flipped state, so as to realize the data writing. A magnetic random access memory device is composed of a synthetic multilayer film structure and a magnetic tunnel junction and the purpose of writing data is achieved through the combined action of an electric field and an electric current. That magnetic random access memory device has the advantages of high speed, low power consumption and nonvolatility.

Description

technical field [0001] The present invention relates to circuits and devices with magnetic / ferromagnetic materials or structures and applications thereof, more specifically, to an artificial antiferromagnet controlled by an electric field and a magnetic random access memory (MARAM) using it for auxiliary erasing and writing. Background technique [0002] A magnetic tunnel junction (called MTJ) is composed of two layers of magnetic metal (such as iron, cobalt, nickel) and an ultra-thin insulating layer (such as aluminum oxide, or magnesium oxide) sandwiched between the two magnetic metal layers. If a bias voltage is applied between two magnetic metal layers, since the insulating layer is very thin, electrons can pass through its potential barrier by tunneling effect. Under a given bias voltage, the size of the tunneling current / tunneling resistance depends on the relative orientation of the magnetization in the two ferromagnetic layers. This phenomenon is called tunneling mag...

AI Technical Summary

Problems solved by technology

However, the spin polarization current applied to spin-transfer torque-random memory is generally in the range of 10 6 to 10 7 A / cm 2 , a larger spin-polarized current will limit the arrangement density of the memory cell array and consume more power

Images