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Regulating method for storage state of resistive variable memory

A technology for resistive variable memory and storage state, which is applied in the field of memory, can solve the problems of resistance transition fluctuation of resistive variable memory, and achieve the effects of reducing design cost, alleviating volatility, and simple operation

Active Publication Date: 2019-07-16
合肥中科微电子创新中心有限公司
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Problems solved by technology

[0005] The main purpose of the present application is to provide a method for regulating the storage state of the resistive memory, so as to alleviate the problem of large fluctuations in the resistance transition of the resistive memory in the prior art

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  • Regulating method for storage state of resistive variable memory
  • Regulating method for storage state of resistive variable memory
  • Regulating method for storage state of resistive variable memory

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Embodiment

[0054] The resistive variable memory includes a substrate, a seed layer, a first electrode layer, an insulating layer, and a second electrode layer stacked in sequence, wherein the second electrode layer is a ferromagnetic electrode layer, and the substrate is SiO 2 substrate; the seed layer is a Ti metal film with a thickness of 10nm; then, the first electrode layer is a Pt layer with a thickness of 30nm; the insulating layer is HfO with a thickness of 20nm 2 layer; the second electrode layer is a 50nm Fe layer.

[0055] The control method of the resistive variable memory includes:

[0056] Step S1, electrically connect the second electrode layer 3 to the anode of Keithley 4200, electrically connect the first electrode layer 1 to the ground terminal of Keithley 4200, and apply a forward scanning voltage to the second electrode layer 3, called the first voltage , so that the above insulating layer 2 is formed figure 2 As shown in the magnetic channel 100, at this time, the ...

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Abstract

The present application provides a method for regulating the storage state of a resistive variable memory. The resistive variable memory includes two electrode layers and an insulating layer between the two electrode layers. The two electrode layers are respectively the first electrode layer and the second electrode layer. At least one electrode layer is a ferromagnetic electrode layer. The storage state regulation method Including: step S1, applying a first voltage between two electrode layers, so that the potential of at least one ferromagnetic electrode layer is higher than the potential of the other electrode layer, so that a magnetic channel is formed in the insulating layer; step S2, applying a voltage to the two electrodes A second voltage is applied between the layers to cause a phase transition of the ferromagnetic material in one of the ferromagnetic electrode layers. This control method does not involve the fracture process of conductive filaments, which alleviates the fluctuation of resistance transition, and makes the RRAM array formed by RRAM more widely used. This control method is easy to operate, can reduce the cost of memory peripheral circuit design, and is beneficial to Its large-scale integration and practical application.

Description

technical field [0001] The present application relates to the field of memory, and in particular, to a method for regulating and controlling the storage state of a resistive variable memory. Background technique [0002] Resistive RAM (RRAM) utilizes the reversible resistance transition effect of materials to store information. It has the advantages of simple device structure, high speed, low power consumption, and strong embeddability. It is a promising prospect for potential applications in the next generation of non-volatile memory. of memory. [0003] However, one of the most important challenges in practical applications is the fluctuation of its transition parameters. Well controlling the changes of these parameters can reduce the fluctuation of RRAM and improve the reliability of devices. Especially in the ECM (electrochemical metallization mechanism) type RRAM, there are fluctuations in the growth and fracture of conductive filaments, including the size of the filam...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L45/00
CPCH10N70/24H10N70/8416
Inventor 龙世兵李磊磊滕蛟刘琦吕杭炳刘明
Owner 合肥中科微电子创新中心有限公司
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