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2results about How to "Achieve read" patented technology

RFID tag reading methods and equipment

ActiveCN116916470Bachieve readRealize the mappingConnection managementRadio transmissionComputation complexityTrunking
This application provides a method and device for reading RFID tags. The method described in this application enables cellular networks to read RFID tags. During the reading process, it ensures compatibility between the cellular network and existing passive RFID tags, achieving a mapping between tag status and RRC status, thereby increasing the compatibility of the cellular network and improving the tag reading distance without modifying existing tag products. Furthermore, the method described in this application can be executed by a relay device, thus avoiding increased computational complexity and power consumption for the tags. It is compatible with passive RFID tags already deployed in business scenarios, ensuring smooth technological evolution.
Owner:CHINA MOBILE COMM LTD RES INST +2

Memory cell and method of making the same, three-dimensional memory and method of operating the same

ActiveCN114093910Bachieve readImplement writingRead-only memories
The present disclosure provides a memory cell, comprising: a stack layer laminated on a substrate, comprising: a plurality of channel holes penetrating through the stack layer and part of the substrate; wherein at least one second laminated material layer in the stack layer after forming the plurality of channel holes is etched to form a ring-shaped limiting structure; a gate dielectric layer located on the surface of the plurality of channel holes after the ring-shaped limiting structure is etched; a channel layer located on the surface of the gate dielectric layer; a resistance variable layer located on the surface of the channel layer corresponding to the ring-shaped limiting structure; wherein the gate voltage applied to the at least one second laminated material layer and the bit line pulse signal connected with the channel layer are controlled to change the resistance state of the resistance variable layer, so as to realize the reading, writing or erasing operation of the memory cell on the resistance variable layer. The present disclosure also provides a preparation method of the memory cell, a three-dimensional memory and an operation method thereof.
Owner:INST OF MICROELECTRONICS CHINESE ACAD OF SCI LTD

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