High density phase change memory and preparation method thereof
A phase-change memory, high-density technology, applied in semiconductor/solid-state device manufacturing, semiconductor devices, electric solid-state devices, etc., can solve problems such as insufficient diode drive current, complex manufacturing process, and inability to meet the operating current requirements of phase change units. , to reduce the number of photolithography, simplify the process, and achieve the effect of high-density storage
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Embodiment 1
[0045] In the following specific embodiments of the present invention, please refer to figure 1 ,figure 1 It is a schematic structural diagram of a high-density phase change memory according to the first preferred embodiment of the present invention. like figure 1 As shown, a high-density phase change memory of the present invention includes, from bottom to top, Schottky diodes 105 and 106 , a phase change layer 107 and an upper electrode 108 . The Schottky diode includes a semiconductor layer 105 and a metal layer 106 that can form a Schottky barrier with the semiconductor layer 105 ; the metal layer 106 also serves as the lower electrode of the phase change layer 107 .
[0046] The high-density phase change memory of the present invention can be disposed on a semiconductor substrate 101 . The semiconductor layer 105 , the metal layer 106 , the phase change layer 107 and the upper electrode 108 are in a flat layer structure stacked from bottom to top.
[0047] In this embo...
Embodiment 2
[0054] Please refer to Figure 2-Figure 7 , Figure 2-Figure 7 is preparation figure 1 A schematic diagram of the process steps of a high-density phase change memory. like Figure 2-Figure 7 As shown, a method for preparing a high-density phase-change memory of the present invention can be used to prepare a high-density phase-change memory in the above-mentioned first embodiment, and may include the following steps:
[0055] Step S01 : providing a P-type semiconductor substrate, and forming an N-type heavily doped layer on the surface of the P-type semiconductor substrate.
[0056] like figure 2 As shown, a conventional P-type Si substrate 101 can be used, and an N-type heavily doped layer 102 is formed on the surface of the P-type Si substrate 101 by ion implantation. In this embodiment, the implanted element may be As.
[0057] Step S02 : forming shallow trench isolation on the P-type semiconductor substrate.
[0058] like image 3 As shown, grooves 103 are formed o...
Embodiment 3
[0068] Please refer to Figure 8 , Figure 8 It is a schematic structural diagram of a high-density phase change memory according to the second preferred embodiment of the present invention. like Figure 8 As shown, a high-density phase change memory of the present invention includes, from bottom to top, Schottky diodes 205 and 208 , a phase change layer 211 and an upper electrode 212 . The Schottky diode includes a semiconductor layer 205 and a metal layer 208 that can form a Schottky barrier with the semiconductor layer. The metal layer 208 also serves as the lower electrode of the phase change layer.
[0069] Different from the first embodiment, in this embodiment, the high-density phase change memory can be arranged on a semiconductor substrate 201; The metal layer 208 is connected with a flat bottom surface and vertical sidewalls, that is, it has a cross-sectional shape such as an "L" shape; the metal layer 208 is stacked with the semiconductor layer 205 below it thro...
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