Preparation method of novel ferroelectric topological domain storage unit

A memory cell, ferroelectric technology, applied in electrical components, circuits, electrical solid devices, etc., can solve the problem of unclear size limit, and achieve the effect of high application prospect, convenient regulation, and not easy to interfere with external electric field.

Pending Publication Date: 2020-08-14
SOUTH CHINA NORMAL UNIVERSITY
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  • Abstract
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  • Claims
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Problems solved by technology

However, the size limit of the performance of a single nano-island is not yet clear, and there are limitations in future integrated high-density devices

Method used

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  • Preparation method of novel ferroelectric topological domain storage unit
  • Preparation method of novel ferroelectric topological domain storage unit
  • Preparation method of novel ferroelectric topological domain storage unit

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Embodiment

[0031] The preparation method of the novel ferroelectric topological domain memory unit of this embodiment specifically includes the following steps:

[0032] S1: Preparation of BFO thin films by pulsed laser deposition method: STO (SrTiO 3 ) single crystal substrate, a layer of 30nm thick BFO (BiFeO 3 ) film (such as figure 1 Shown), the preparation parameters of the pulsed laser deposition method are as follows:

[0033] Energy (mJ / cm 3 )

Pulse frequency (Hz) temperature(℃) Oxygen pressure (Pa) 300 8 650 10

[0034] S2: Deposit a layer of gold coating on the surface of the BFO film by thermal evaporation: by heating the gold source in the evaporator, its atoms are vaporized and escaped from the surface, forming a vapor influx and entering the surface of the BFO film, solidifying to form solid gold plating, to obtain ferroelectric materials (such as figure 2 shown). Wherein, the deposition rate of gold is set at 2 angstroms per second duri...

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Abstract

The invention discloses a preparation method of a novel ferroelectric topological domain storage unit. The preparation method comprises the following steps: S1, depositing a layer of BFO (BiFeO3) thinfilm on an STO (SrTiO3) single crystal substrate in a (001) direction by adopting a pulse laser deposition method; s2, deposting a gold plating layer on the surface of the BFO thin film through a thermal evaporation method, and preparing a ferroelectric material; s3, preparing a storage unit: scraping the surface of the gold plating layer in the S2 by adopting a conductive atomic force microscope(PFM) probe, scraping off a local gold plating layer to expose a BFO region, grounding gold at the periphery of the BFO region to serve as a gold electrode, and taking the center of the BFO region asa BFO electrode to prepare the storage unit; and S4, regulation and control of the storage unit: applying a point voltage to the BFO electrode to induce the BFO region to form a central convergence domain or a central divergence domain. Compared with the prior art, the topological domain which is convenient to regulate and control and high in stability is prepared, and high-density storage can beachieved.

Description

technical field [0001] The invention relates to the technical field of ferroelectric materials, in particular to a preparation method of a novel ferroelectric topological domain storage unit. Background technique [0002] In the context of the era of big data, the size of traditional semiconductor chips has approached the quantum limit, making it difficult to develop further. This has prompted people to explore storage devices based on new semiconductor electronic material systems to meet the growing storage needs of human beings. Among them, the ferroelectric memory under the ferroelectric material system is a new type of memory. In ferroelectric materials, ferroelectric domain walls, as an ultra-thin heterojunction, have many novel physical properties, such as good electrical conductivity, easy to be erased and generated artificially, etc., so it is realized by domain wall regulation Data storage can greatly increase storage density, shorten response time, and reduce syst...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/11504H01L27/11507
CPCH10B53/10H10B53/30
Inventor 高兴森杨文达陈超田国
Owner SOUTH CHINA NORMAL UNIVERSITY
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