Preparation method of novel ferroelectric topological domain storage unit
A memory cell, ferroelectric technology, applied in electrical components, circuits, electrical solid devices, etc., can solve the problem of unclear size limit, and achieve the effect of high application prospect, convenient regulation, and not easy to interfere with external electric field.
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[0031] The preparation method of the novel ferroelectric topological domain memory unit of this embodiment specifically includes the following steps:
[0032] S1: Preparation of BFO thin films by pulsed laser deposition method: STO (SrTiO 3 ) single crystal substrate, a layer of 30nm thick BFO (BiFeO 3 ) film (such as figure 1 Shown), the preparation parameters of the pulsed laser deposition method are as follows:
[0033] Energy (mJ / cm 3 )
Pulse frequency (Hz) temperature(℃) Oxygen pressure (Pa) 300 8 650 10
[0034] S2: Deposit a layer of gold coating on the surface of the BFO film by thermal evaporation: by heating the gold source in the evaporator, its atoms are vaporized and escaped from the surface, forming a vapor influx and entering the surface of the BFO film, solidifying to form solid gold plating, to obtain ferroelectric materials (such as figure 2 shown). Wherein, the deposition rate of gold is set at 2 angstroms per second duri...
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