42 results about "Conductive atomic force microscopy" patented technology

Apparatus and techniques for extracting information carried in higher eigenmodes or harmonics of an oscillating cantilever or other oscillating sensors in atomic force microscopy and related MEMs work are described. Similar apparatus and techniques for extracting information from piezoelectric, polymer and other materials using contact resonance with multiple excitation signals are also described.

An atomic force microscope (AFM) system capable of imaging multiple physical properties of a sample material at the nanoscale level. The system provides an apparatus and method for imaging physical properties using an electromagnetic coil placed under the sample. Excitation of the coil creates currents in the sample, which may be used to image a topography of the sample, a physical property of the sample, or both.

A sequence or array of electrochemical cells storing both digital and analog data. Both binary code and codes having a higher base may be stored in the memory device to increase information density. Such battery arrays could also provide power for the micro or nanodevice. Devices are microscale and nanoscale in size and utilize electrically conductive atomic force microscopy tips to record and read data stored in the device.

The invention discloses an azafluorene-based small molecule butterfly-shaped organic nanocrystal material and its preparation method and application. The azafluorene-based small-molecule butterfly-shaped organic nanocrystal material has an asymmetric double-sided butterfly-shaped multi-dimensional micron structure , one side is plum-shaped and the other is butterfly-shaped. The invention realizes the controllable preparation of pure organic small molecule nanometer material in the field of multi-dimensional structure. Through the corresponding dynamic growth process and single crystal analysis and other characterization methods, the growth mechanism of this organic nanomaterial and the deep relationship between the morphology and molecular structure were confirmed. In addition, the excellent wire performance of the structure was verified based on the conductive atomic force microscopy platform. The application potential of such organic semiconductor materials in future optoelectronic devices is demonstrated.

The invention relates to a probe of a conducting atomic force microscope. The probe comprises: a substrate of a cantilever probe; a needle tip; and a conductive film, which is arranged at a surface of the needle tip. Besides, the material of the conductive film is graphene. Moreover, the invention provides a method that employs the probe to measure local conductivity of a semiconductor and a needle tip-free near-field optical detection method that employs the probe to measure a terahertz wave band. According to the invention, graphene is utilized, wherein the grapheme has the following characteristics that: the graphene is composed of carbon atoms and is thin to a monatomic layer; and the graphene is a semimetal two-dimensional thin material that has a zero gap; besides, the probe has advantages of good conductivity and high electron mobility; moreover, a Fermi surface can carry out self-adjustment with charging and discharging motions and a carrier injection potential is low. In addition, an electronic plasmon oscillating frequency of the graphene is just at a terahertz wave band; and the graphene has soft materials and strong stability on thermodynamics. The above-mentioned statements are physical bases on which the graphene is utilized to replace a traditional metal material as a plated film of a surface of an atomic force microscope probe, so that the above-mentioned limitations are broken through.

The invention discloses a periodic striped domain structure of a ferroelectric thin film and a characterization method thereof, belonging to the technical field of micro-nano characterization, and the method comprises the following steps: preparing a bismuth ferrite thin film by pulse laser deposition; characterizing it by an X-ray diffractometer The lattice constant is determined to be a rhomboid phase structure, the piezoelectric butterfly curve is used to confirm its ferroelectricity and coercive voltage, and its morphology is characterized by atomic force microscopy; the periodic stripes in nanoferroelectric thin films are characterized by vector piezoelectric force microscopy Banded domains, the three-dimensional domain structure was determined by fine vector piezoelectric force microscopy analysis method; the domain walls of the striped domains were observed to conduct electricity by using conductive atomic force microscopy. The ferroelectric thin film preparation method provided by the present invention can be used in non-volatile, high-density ferroelectric random access memory; at the same time, the provided characterization method can accurately provide the three-dimensional domain structure and domain wall of the periodic strip domain Conduction; provide solutions for the development and characterization of high-density ferroelectric memory devices.

The invention discloses a nanoscale electrode processing method based on an AFM (atomic force microscopy). According to the method, a micrometer level electrode is cut and processed through the controlling on the action force of an AFM probe on a sample and the movement path and speed of the probe, thus the processing of the nanoscale electrode of which a front end has width within100 nanometers is realized, and the detection accuracy and flexibility in a nano fluidic test are increased. The nanoscale electrode processing method provided by the invention can be applied to high-flexibility detection and analysis of the fluid characteristics of fluid in a nano channel in the nano fluidic chip and biology monomolecules.