Single-crystal-silicon surface mechanical damage detecting method based on conductivity variation

A technology of mechanical damage and detection methods, which is applied in the direction of measuring devices, instruments, scanning probe microscopy, etc., can solve the problems of difficult to adjust the detection position in time, the detection process and results are out of sync, and the sample preparation process is complicated, etc. The results are online controllable, low cost and high efficiency
CN108333390AInactive Publication Date: 2018-07-27SOUTHWEST JIAOTONG UNIV
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Patent Information

Authority / Receiving Office
CN · China
Current Assignee / Owner
SOUTHWEST JIAOTONG UNIV
Publication Date
2018-07-27
Estimated Expiration
Not applicable · inactive patent

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Abstract

The invention discloses a single-crystal-silicon surface mechanical damage detecting method based on conductivity variation. The method includes the following steps of placing a clean and dry to-be-detected single-crystal-silicon wafer into a conductive atomic power microscope sample cavity, scanning a to-be-detected damage area to obtain a surface topography and a current distribution diagram, comparing and analyzing a scanning result, and finding the position of the single-crystal-silicon surface mechanical damage to obtain the detection result. In the method, scanning and detecting are conducted by means of a micro tip of an atomic power microscope, the contact pressure is far smaller than the clinical contact pressure of single crystal silicon during yielding, and a sample can not be damaged. The method is suitable for detecting the mechanical damage generated in the cutting, grinding, polishing and other machining processes of single-crystal-silicon surfaces.
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Description

technical field

[0001] The invention belongs to the technical field of single crystal silicon, and in particular relates to a detection method for mechanical damage on the surface of single crystal silicon based on conductivity change. Background technique

[0002] Single crystal silicon is widely used in the manufacture of semiconductor devices and integrated circuits due to its excellent mechanical and electronic properties. The surface quality of monocrystalline silicon directly affects the performance and life of the manufactured devices. Therefore, it is particularly important to detect surface damage in the production process of single crystal silicon.

[0003] The nano-scale damage of single crystal silicon is mainly caused by contact processing methods such as cutting and polishing. At present, the commonly used detection methods mainly include transmission electron microscopy (TEM), X-ray diffraction and micro-Raman spectroscopy. The sample preparation process of ...

Claims

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