Eureka AIR delivers breakthrough ideas for toughest innovation challenges, trusted by R&D personnel around the world.

Electrically-induced reduction method for degraded graphene oxide

A graphene oxide, electric induction technology, applied in the reduction of graphene oxide, preparation and nano-etched graphene field, can solve the problem of zero band gap characteristic barrier and so on

Inactive Publication Date: 2012-06-20
FUDAN UNIV
View PDF1 Cites 7 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The high electron mobility of graphene made it the earliest application in high-frequency devices, but the zero-bandgap characteristic has become a major obstacle for the application of graphene in logic devices

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Electrically-induced reduction method for degraded graphene oxide
  • Electrically-induced reduction method for degraded graphene oxide
  • Electrically-induced reduction method for degraded graphene oxide

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0018] The method of using a conductive atomic force microscope to electrically induce the reduction of graphene oxide proposed by the present invention is relatively stable and reliable, and can be used as a conventional means to complete the reduction of graphene oxide. Described below is an embodiment of using a conductive atomic force microscope to electrically induce the reduction of graphene oxide proposed by the present invention.

[0019] In the drawings, for the convenience of illustration, the size of lines and structures does not represent the actual size. Although these diagrams do not completely and accurately reflect the actual scale of the instrument and circuit, they still completely reflect the general working principle of the instrument and the basic structure of the working circuit during the reduction process.

[0020] Firstly, the cleaned silicon substrate 101 is doped to form a highly doped substrate. Among them, the doping method is ion implantation, an...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention belongs to the technical field of manufacturing for carbon-based integrated circuit, and particularly relates to a reduction method for degraded graphene oxide. The reduction method for degraded graphene oxide disclosed by the invention comprises the following steps of: performing controllable reduction on a graphene oxide on a conductive substrate by a contact probe electrically-induced reduction method; and controlling the ingredients of the reduced graphene oxide by controlling the voltage applied by the probe of a conductive atomic force microscopy, thereby controlling the resistivity of the reduced graphene oxide. The method for reducing a graphene oxide by a conductive contact probe is a novel method for reducing a graphene oxide, and the method can be directly applied to preparation for planar device with nanoscale, thereby greatly simplifying the complexity of preparation for the device. Additionally, the method can also be used as basic machining process for grapheme-based electronic device.

Description

technical field [0001] The invention belongs to the technical field of carbon-based integrated circuit manufacturing, and in particular relates to a reduction method of graphene oxide. In particular, it relates to a method for preparing and nanoetching graphene using conductive atomic force microscopy (C-AFM). Background technique [0002] In the field of semiconductor manufacturing, with the improvement of integration and the reduction of line width, silicon, the material basis of current integrated circuits, has gradually reached its material processing limit - 10 nanometers of line width, while silicon-based integrated circuits cannot achieve this after 11 nanometers. Breaking through its physical limitations includes current transmission loss, quantum effects, thermal effects, etc., so it is difficult to produce products with stable performance and higher integration. The semiconductor industry seems to have encountered an insurmountable bottleneck. [0003] However, in...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): C01B31/04C01B32/19
Inventor 周鹏孙清清魏红强张卫
Owner FUDAN UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com