Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Method for preparing nano texture through local anodic oxidation

A local anodizing and nanotexturing technology, applied in the manufacture of microstructure devices, microstructure technology, gaseous chemical plating, etc., can solve the problems of micro-friction, adhesion, affecting operation and service life, etc., to reduce surface adhesion strength, good anti-adhesion performance

Inactive Publication Date: 2012-07-04
GUANGXI UNIV
View PDF2 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, due to the huge specific surface area, the moving parts of MOEMS / NOEMS have problems such as serious adhesion and micro-friction during operation, which directly affect its normal operation and service life

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for preparing nano texture through local anodic oxidation
  • Method for preparing nano texture through local anodic oxidation

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0015] Preparation of Hydroxylated Single Crystal Silicon Surface First soak the single crystal silicon surface of the single crystal silicon wafer in 1% HF aqueous solution for hydrogen passivation for 4 minutes; take out the hydrogen passivated single crystal silicon wafer , ultrasonically cleaned in deionized water, and then blown dry with nitrogen;

[0016] The preparation of surface nano-texture edited the computer script according to the preset pattern, and imported the computer script into the online control software (SPM console, the same for the following examples) of the conductive atomic force microscope (model CSPM 4000, the same for the following examples), Draw a circular pattern with a preset surface coverage of 15%; operate a conductive atomic force microscope, and perform oxidation processing under the conditions of a controlled pulse voltage of 40mV, a pulse width of 50ms and a relative humidity of 15%, and the processed single crystal silicon wafer The sur...

Embodiment 2

[0018] Preparation of Hydroxylated Single Crystal Silicon Surface First soak the single crystal silicon surface of the single crystal silicon wafer in 2% HF aqueous solution for hydrogen passivation for 2 minutes; take out the hydrogen passivated single crystal silicon wafer , ultrasonically cleaned in deionized water, and then blown dry with nitrogen;

[0019] Preparation of surface nano-texture Edit the computer script according to the preset pattern, import the computer script into the online control software of the conductive atomic force microscope, and draw a triangle figure with a preset surface coverage rate of 18%; operate the conductive atomic force microscope , under the conditions of controlling the pulse voltage of 70mV, the pulse width of 80ms and the relative humidity of 65%, the oxidation process was carried out, and the nano-texture on the surface of the processed single crystal silicon wafer was confirmed by scanning with a conductive atomic force microscope...

Embodiment 3

[0021] Preparation of Hydroxylated Single Crystal Silicon Surface First soak the single crystal silicon surface of the single crystal silicon wafer in 2% HF aqueous solution for hydrogen passivation for 2 minutes; take out the hydrogen passivated single crystal silicon wafer , ultrasonically cleaned in deionized water, and then blown dry with nitrogen;

[0022] Preparation of surface nano-texture Edit the computer script according to the preset pattern, import the computer script into the online control software of the conductive atomic force microscope, draw a preset rectangular figure with a surface coverage of 20%; operate the conductive atomic force microscope , under the conditions of controlling the pulse voltage of 80mV, the pulse width of 90ms and the relative humidity of 85%, the oxidation process was carried out, and the nano-texture on the surface of the processed single crystal silicon wafer was confirmed by scanning with a conductive atomic force microscope, and ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a method for preparing nano texture through local anodic oxidation. In the method, the nano texture is prepared by adopting a local anodic oxidation method based on a conductive atomic force microscopy, and the height (0.5-12nm) of the nano texture can be controlled through selecting different pulse voltages, pulse widths and surface humidity values. With the application of the nano texture, the large-area contact with the surface of a micro-nano optical mechanical and electrical system device can be effectively blocked, and the surface adhesive force of the micro-nano optical mechanical and electrical system device can be remarkably reduced. Therefore, the surface nano texture prepared by the method has good anti-adhesion performance.

Description

technical field [0001] The invention relates to a method for preparing a nano-texture, in particular to a method for preparing a nano-texture by partial anodic oxidation. Background technique [0002] In the past two decades, micro-nano-opto-electromechanical systems (MOEMS / NOEMS) have achieved rapid development due to their lower cost and excellent performance. With the advancement of modern science and technology, people are constantly pursuing micro-devices with small scale and perfect performance to meet the requirements in the fields of information, biology, environment, medicine, aerospace and smart weapons. These trends have a profound impact on the development of modern manufacturing science and technology. However, due to the huge specific surface area, the moving parts of MOEMS / NOEMS have problems such as serious adhesion and micro-friction during operation, which directly affect its normal operation and service life. At present, micro-nano opto-mechanical system...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): B81C1/00
Inventor 莫宇飞黄福川卢朝霞杨茂立
Owner GUANGXI UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com