126 results about "Hydrogen passivation" patented technology

The invention is a hydrogen passivation shut down system for a fuel cell power plant (10). An anode flow path (24) is in fluid communication with an anode catalyst (14) for directing hydrogen fuel to flow adjacent to the anode catalyst (14), and a cathode flow path (38) is in fluid communication with a cathode catalyst (16) for directing an oxidant to flow adjacent to the cathode catalyst (16) of a fuel cell (12). Hydrogen fuel is permitted to transfer between the anode flow path (24) and the cathode flow path (38). A hydrogen reservoir (66) is secured in fluid communication with the anode flow path (24) for receiving and storing hydrogen during fuel cell (12) operation, and for releasing the hydrogen into fuel cell (12) whenever the fuel cell (12) is shut down.

The invention is a hydrogen passivation shut down system for a fuel cell power plant (10, 200). During shut down of the plant (10, 200), hydrogen fuel is permitted to transfer between an anode flow path (24, 24′) and a cathode flow path (38, 38′). A controlled-oxidant flow device (209) near an oxygen source (58′) permits a minimal amount of atmospheric oxygen to enter the power plant (200) during shut down to equalize pressure between ambient atmosphere and the flow paths (24′, 28′) and to keep limited atmospheric oxygen entering the power plant (200) through the device (209) as far as possible from fuel cell flow fields (28′, 42′). A non-leaking hydrogen inlet valve (202), a non-leaking cathode exhaust valve (208), and a combined oxidant and fuel exhaust line (206) also minimize penetration of oxygen into the shut down power plant (200).

Methods for manufacturing textured selective emitter back contact solar cells, and solar cells made in accordance therewith. A separate antireflective coating is preferably deposited, which also preferably provides simultaneous hydrogen passivation. The high sheet resistance and low sheet resistance selective emitter diffusions may be performed in either order.

The invention relates to a method for preparing a crystalline silicon solar cell. The method specifically comprises the following steps of: 1) performing wet texturing, and performing reactive ion etching, passivation and deionization for secondary texturing; and 2) diffusing a silicon chip obtained by the step 1), and sequentially performing edge etching, removal of phosphorosilicate glass, hydrogen passivation, deposition of a silicon nitride film, silk screening of cathode, anode and back aluminum, and sintering. In the method for preparing the crystalline silicon solar cell, the method for prolonging the optical distance of light in crystalline silicon and reducing light reflection loss is mainly provided; and the crystalline silicon chip prepared by the method provided by the invention has relatively lower surface reflectivity, and the hydrogen passivation performed before the deposition of the silicon nitride film can reduce silicon dangling bonds, form Si-H, reduce surface states, increase short-circuit current and fulfill the aim of improving the conversion efficiency.

The invention discloses a crystalline silicon solar cell resisting to a PID effect. The crystalline silicon solar cell comprises a silicon substrate and a passive film arranged on the silicon substrate. The passive film comprises a compact layer SiO2, a loose layer SiO2, a compact layer Si3N4 and a loose layer Si3N4 all of which sequentially deposit on the front surface of the silicon substrate in a laminated mode. In addition, the invention relates to a manufacturing method of the crystalline silicon solar cell. The manufacturing method comprises the steps of texture making, diffusion, etching, oxidation, PECVD, silk-screen printing and sintering test. Double SiO2/Si3N4 films composed of an SiO2 passive film growing under the low temperature and an Si3N4 film are adopted so as to obviously improve the performance of the solar cell and enhance the passivation effect of the surface of the solar cell, wherein the Si3N4 film is formed in the PECVD mode and has the hydrogen passivation function and good antireflection effect.

The invention provides a novel double-sided PERC battery structure and a preparation process thereof. The front and back passivation layers of the battery are symmetrical, which greatly reduces the warpage of the double-sided battery and improves the mechanical load strength of the module. On the basis of ensuring the anti-PID performance of the battery, the laminated passivation structure adoptsa unique surface passivation layer deposition process to optimize the optical (anti-reflection effect) and electrical (hydrogen passivation effect) performance of the front and back surfaces, and to achieve the improvement and enhancement of the front conversion efficiency, double-sided ratio and anti-LID effect of the battery. The double-sided PERC battery process adopted by the invention The SiO2 and AlOx layers on the front and back sides are formed simultaneously by thermal oxidation and ALD respectively, and the SiNx/SiNy/SiOxNy/SiOx layers on the front and back sides are formed by PECVDdeposition respectively. The deposition order of the front and back sides can be adjusted.

A method for fabricating a semiconductor device includes: forming a transistor in a semiconductor substrate; forming a capacitor including a hydrogen-containing top electrode over the transistor; and performing an annealing process for hydrogen passivation after the capacitor is formed.

The invention discloses a preparation method of passivated emitter and rear side cell (PERC) and passivated emitter and rear total diffused (PERT) solar cells, and belongs to the technical field of silicon solar cells. A heat treatment technology is added on the basis of an existing technology, so that the hydrogen passivation effect of a silicon nitride film is further improved; carrier recombination is lowered; the electrical properties of the solar cells are improved; the open-circuit voltage of the cells is improved by 10-15mV; and the efficiency of the cells is improved by 0.3%-0.5%. In addition, sintering furnace equipment on an existing enterprise production line is fully utilized by a fast heat treatment technology; the equipment investment is fully reduced; the manufacturing cost of the cells is not increased; and the method disclosed by the invention is simple and feasible, easy to realize, relatively low in cost, and suitable for popularization and application.

The invention is a hydrogen passivation shut down system for a fuel cell power plant (10, 200). During shut down of the plant (10, 200), hydrogen fuel is permitted to transfer between an anode flow path (24, 24′) and a cathode flow path (38, 38′). A passive hydrogen bleed line (202) permits passage of a smallest amount of hydrogen into the fuel cell (12′) necessary to maintain the fuel cell (12′) in a passive state. A diffusion media (204) may be secured in fluid communication with the bleed line (202) to maintain a constant, slow rate of diffusion of the hydrogen into the fuel cell (12′) despite varying pressure differentials between the shutdown fuel cell (12′) and ambient atmosphere adjacent the cell (12′).

The invention discloses a hydrogen passivation processing method for a solar cell, which comprises the steps of setting the illumination intensity of a light source, and irradiating the solar cell ina suspended manner by using the light source; heating the solar cell by radiation heat generated by the light source; and cooling the solar cell by using a cooling medium, and enabling the solar cellto be maintained at a constant temperature, wherein irradiation, heating and cooling are performed on the solar cell simultaneously, so that the appropriateness rate of the solar cell in the hydrogenpassivation processing process is improved. Accordingly, the invention further provides a hydrogen passivation processing device for implementing the method.

The invention provides a fabrication method of an n-type solar cell. The fabrication method comprises the steps of performing surface texturing and cleaning on an n-type silicon substrate; fabricatingan emitter on a front surface of the silicon substrate; performing insulation processing; fabricating a back-surface field and a back-surface passivation layer; fabricating a front-surface passivation and anti-reflection film; patterning the front surface and a back surface to form an electrode paste layer containing a conductive constituent; performing first thermal treatment process; performingsecond thermal treatment process; and comparing the second thermal treatment process with the first thermal treatment process. By the thermal treatment process for twice, the contact resistance and the series resistance of a battery electrode can be reduced, the sintering temperature can be reduced, the influence of high-temperature sintering on the emitter of the battery and passivation performance of a surface field is reduced, and the battery sintering process window can be expanded; and by thermal treatment for twice, the hydrogen passivation performance of a passivation film can be improved, the integral electrical performance conversion efficiency is improved, so that optimal passivation performance and optimal contact performance are simultaneously achieved.

The invention discloses a heterojunction battery layered hydrogen passivation method, a hydrogen passivation device, a battery, a battery module and a solar power station. According to the hydrogen passivation method, at least one time of hydrogen passivation treatment is carried out on the semi-finished product of the heterojunction battery during the heterojunction battery preparation process, and in the case of hydrogen passivation treatment, the semi-finished product of the heterojunction battery is heated and irradiated by a light source. The heterojunction battery layered hydrogen passivation method adopts the hydrogen passivation process during the heterojunction battery preparation process, high-concentration hydrogen atoms can be diffused to the interface of a silicon crystal, a silicon dangling bond on the interface can be better passivated, and the surface recombination rate of the silicon crystal is significantly reduced.

A method for fabricating a semiconductor device includes forming an upper structure in which a bottom electrode, a dielectric layer, a top electrode and a plasma protection layer are sequentially stacked on a lower structure, exposing the upper structure to a plasma treatment, and exposing the plasma-treated upper structure and the lower structure to a hydrogen passivation process.

The invention discloses a photo-induced hydrogen passivation and defect repair device for an LED (Light Emitting Diode) silicon solar cell. The device comprises a test bed for placing the silicon solar cell and keeping the temperature constant, and further comprises an LED light source system, an optical convergence system and a controller, wherein the LED light source system comprises an LED array for emitting light; the optical convergence system is arranged on a light emitting path of the LED array, and is used for converging the light emitted by the LED array to a detection area of the test bed; and the controller is used for modifying the parameters of the light emitted by the LED array as well as analyzing and calculating the passivation and defect parameters of the silicon solar cell. The device improves the conversion efficiency of the solar cell by passivating impurity defects in crystalline silicon, passivating a silicon material and repairing lattice defects such as dislocation in a polycrystalline silicon material.

The invention relates to an amorphous silicon passivation N-type back contact battery and a manufacturing method thereof. The battery comprises an N-type silicon wafer substrate, a P-type doping layer and an N-type amorphous silicon layer are arranged on the back of the N-type silicon wafer substrate, and electrodes are arranged on the P-type doping layer and the N-type amorphous silicon layer. The manufacturing method of the battery comprises steps of forming the P-type doping layer on the back of the N-type silicon wafer substrate in a diffusion manner through a mask mode; forming a groove in the back of a diffused silicon wafer; and depositing the N-type amorphous silicon layer in the groove through a mask mode. The P-type doping layer and the N-type amorphous silicon layer form a P-type emitting electrode and an N-type back field on the back of the back contact battery, and the electrodes are arranged on the P-type emitting electrode and the N-type back field. The N-type amorphous silicon layer is formed by the silicon wafer, an electric field in the back contact battery is formed by utilizing a good hydrogen passivation effect and a good field passivation effect of the N-type amorphous silicon layer, a passivation effect is improved, the efficiency of the battery is improved obviously, a process is simple, and production efficiency is improved.

The invention discloses a processing method of gap filling, which is used for forming a thin film on a semiconductor substrate with a gap and completely filling the gap. The processing method comprises the following steps: using a method of high-density plasma chemical vapor deposition (PCVD) to fill the gap; using nitrogen trifluoride to etch the overhang deposited in the corner of the gap; afterintroducing hydrogen gas for hydrogen passivating treatment, introducing oxygen gas to react with the residual hydrogen gas after hydrogen passivating treatment, and discharging all the gases in thereaction chamber; and then, returning to carry out the gap filling operation until the filling of the gap is completed. The embodiment of the processing method of gap filling can remove the residual hydrogen gas in the reaction chamber by introducing the oxygen gas after the hydrogen passivating treatment so as to prevent the hydrogen gas from being introduced into the generated thin film, avoid various kinds of performance reduction caused by the generation of H2 and improve the performance of the thin film. The invention also discloses a manufacturing method of a shallow trench isolation groove, which can improve the performance of an isolation groove thin film.

The invention discloses a hydrogen passivation technology for improving a light failure problem of a mono-crystalline solar cell. The technology comprises the following steps: regulating the conversion quantity, between the high compound state and the low compound state, of B-O defect in a silicon substrate by using the H in the SiN:H film on the solar cell surface and controlling the current andtemperature and like elements exerted on a cell, and regulating the passivation quantity on the B-O defect by the H by using the current, thereby achieving a new stable state, wherein this state cannot return to the high compound state to influence the cell efficiency due to the illumination, so that the failure rate is reduced to within 1.5% under the standard light failure testing condition whenthe efficiency reduction degree of the mono-crystalline solar cell is within 0.07%. The technology disclosed by the invention is not limited to the mono-crystalline solar cell, and further comprisesmono-crystalline-like and polycrystalline solar cells, and the photoelectric conversion efficiency of the cell cannot be reduced by the light failure improved obtained on the polycrystalline solar cell. The technology temperature, the current and the time selected by the invention are easy to achieve and control; the technology is simple in method, obvious in effect, and capable of being compatible with the industrial production, and has high practical value.

The invention relates to a hydrogen passivation method for a solar cell, which comprises the following steps: (1) keeping the solar cell in a temperature range of 100 DEG C to 400 DEG C; (2) simultaneously applying a forward voltage to a pn junction of the solar cell to reduce a built-in potential. The method disclosed by the invention has the beneficial effects of solving the difficult problem how to introduce high-concentration hydrogen atom into a solar cell matrix, having an obvious passivation effect on impurities and defects in a semiconductor material matrix and reducing recombination activity of the semiconductor material matrix used as an electronic-hole composite center; the method is beneficial for improving conversion efficiency of the solar cell. Meanwhile, the method can be well compatible to the manufacturing process of an existing solar cell piece, is easy for industrialization implementation and has high practical value.

The invention discloses a PECVD coating technology used for preparing an assembly anti-PID crystal silicon solar energy battery, and an anti-PID solar energy battery assembly can be prepared under prerequisite that the transition efficiency of battery piece is not decreased. The method is characterized in that a silicon nitride- silicon dioxide-silicon nitride lamination antireflection film is deposited on a silicon chip surface, the lamination antireflection film has the characteristics that the internal layer silicon nitride membrane has good hydrogen passivation effect, transition efficiency of battery piece is not decreased, a silica membrane has Na4 ions obstruction characteristic, so that the assembly has anti-PID effect. The technology has the beneficial effect that the PECVD coating technology is adjusted, no equipment is added, battery process operation is not increased, the anti-PID effect can be realized under prerequisite that transition efficiency of battery piece is not decreased; The scheme is simple and feasible, cost is low, the technology can be used for large industrial production; the technology is suitable for all the tubular type PECVD coating equipment for monocrystalline or polycrystalline crystal silicon solar energy battery.

The invention discloses a silicon wafer back-surface annealing and front-side coating integrated method, which comprises the following steps of carrying out laser grooving on the back surface of a silicon wafer by utilizing laser equipment, placing the silicon wafer subjected to laser grooving into a deposition device, introducing reaction gas SiH4 and NH3 and N2 into the deposition cavity of thedeposition device for deposition so as to coat the front surface of the silicon wafer. According to the silicon wafer back surface annealing and front surface coating integrated method, the laser grooving is carried out before the front surface coating process, and the back annealing is carried out by utilizing the medium-high-temperature oxygen-free environment in the PECVD process, and meanwhile, the front-surface film coating can be synchronously completed, no extra annealing process is added; the thermal shock, thermal damage and crystal lattice defects caused by the high-energy laser grooving on the back surface can be recovered and restored; and the composite rate of the damaged surface of the silicon wafer after laser is further reduced, and the method also can be used for carryingout hydrogen passivation on the position of the back grooving (window opening), so that the minority carrier lifetime of the silicon wafer damaged by the laser is prolonged, and the efficiency of thesolar cell is further improved.