15 results about "Hydrogen passivation" patented technology

The invention provides a process method for improving the performance of a beta-Ga2O3 device through low-energy proton irradiation, and relates to the technical field of electronic components, and the method comprises the following steps: carrying out low-energy proton irradiation on the basis of irradiation experiment parameters at a preset environment temperature; low-energy proton irradiation with different fluence is carried out on the beta-Ga2O3 Schottky diode in a preset incidence mode to determine irradiation process data, and in combination with deep level transient spectroscopy (DLTS) analysis and device simulation, defect evolution and a hydrogen passivation mechanism caused in a beta-Ga2O3 epitaxial layer after low-energy proton incidence are revealed. According to the method, the cognitive limitation that traditional radiation must cause performance degradation of devices is broken through, and the field of low-energy proton irradiation which is not fully researched is focused.

An offshore hydrogen production platform hydrogen production equipment cooling system comprises a gas-liquid treater, a hydrogen purification device, a chilled water machine, a hydrogen compressor and a hydrogenation machine, an inlet of the gas-liquid treater is connected with an electrolytic bath, and an outlet of the gas-liquid treater is sequentially connected with a hydrogen passivation device, the hydrogen compressor, a buffer gas tank, the hydrogen compressor, a hydrogen storage tank and the hydrogenation machine. The hydrogen adding machine is communicated with the hydrogen-powered ship and provides hydrogen for the hydrogen-powered ship, and the refrigerating unit is connected with the hydrogen passivating device through a pipeline to form a circulating pipeline. Aiming at the characteristics of offshore and shallow sea areas and a fixed hydrogen production platform, when hydrogen production equipment is cooled, required fresh water is provided through cooling of the air cooling radiator arranged on the main deck of the platform, so that the situation that seawater with poor cleanliness in the offshore and shallow sea areas flows through a plate heat exchanger to cool the fresh water to be provided is avoided; the cooling efficiency is improved.

This application provides a passivation structure and its preparation method, as well as a silicon solar cell and its preparation method. The passivation structure includes a first aluminum oxide layer, a first aluminum nitride layer, a second aluminum oxide layer, and a second aluminum nitride layer stacked together. The first aluminum oxide layer directly contacts the silicon edge and repairs cutting damage and dangling bonds through chemical passivation. It adapts to the p-type silicon region with a negative fixed charge. The first aluminum nitride layer passivates the n-type silicon with a positive fixed charge. The high hydrogen content enhances defect repair, and the dense structure blocks impurities from intruding. The second aluminum oxide layer supplements the negative charge to improve the passivation effect of the p-type silicon and forms stress complementarity with the aluminum nitride layer to prevent film cracking. The second aluminum nitride layer resists stringing and lamination damage, blocks moisture and corrosion, and ensures long-term performance. This structure achieves optimal simultaneous passivation of p / n-type silicon through charge complementarity and synergistic hydrogen passivation, improving the minority carrier lifetime at the cell edge, the implicit open-circuit voltage, and the module power, and solving the pain points of incomplete passivation and poor stability.

The present application discloses a back contact solar cell and a photovoltaic module. In one example, a back contact solar cell includes a semiconductor substrate, a first doped semiconductor part, a second doped semiconductor part, a first dielectric passivation layer, and a second dielectric passivation layer. Each of the first dielectric passivation layer and the second dielectric passivation layer includes a first passivation sub-layer having a field passivation function. A conductivity type of the first doped semiconductor part is opposite to that of fixed charges of the first passivation sub-layer. Each of the first dielectric passivation layer and the second dielectric passivation layer further includes a second passivation sub-layer having a chemical passivation function. The first passivation sub-layer of the first dielectric passivation layer includes a hydrogen-containing passivation layer. A portion of the hydrogen-containing passivation layer has micro-structures.

This invention provides a perovskite solar cell, its fabrication method, and a three-terminal tandem solar cell, specifically relating to the field of solar cell fabrication technology. The fabrication method for this perovskite solar cell involves first preparing a first transport layer on a silicon substrate. Using atomic layer deposition (ALD) technology, a perovskite thin film is formed on the surface of the first transport layer, followed by in-situ annealing to obtain a perovskite absorber layer. Then, a second transport layer, a buffer layer, and a transparent conductive layer are sequentially fabricated on the surface of the perovskite absorber layer to obtain the perovskite solar cell. ALD's self-limiting reaction is insensitive to silicon textured surfaces, overcoming the bottleneck of uneven film formation in traditional processes. This results in a perovskite layer with precise thickness, dense density without pinholes, and consistent grain orientation, significantly suppressing interface / bulk recombination and improving carrier lifetime. In-situ annealing avoids thermal damage and promotes hydrogen passivation of the silicon surface, synergistically improving Voc and FF.

The application provides a passivation method of a solar cell, a solar cell and a photovoltaic module, which can be widely applied to the technical field of solar cells. The passivation method of the solar cell comprises the following steps: performing light treatment and electric treatment on a silicon substrate to form a cell piece; depositing a preset material on the surface of the cell piece to form a hydrogen supplement layer; wherein the preset material is different from the film layer material on the surface of the cell piece; the preset material contains hydrogen; performing annealing treatment on the cell piece containing the hydrogen supplement layer to passivate defect areas in the hydrogen in the preset material; and etching the hydrogen supplement layer by using a preset chemical agent to obtain a cell piece after hydrogen passivation. Before testing the cell piece, the hydrogen supplement layer is arranged on the surface of the cell piece, and the defect areas of the cell piece are passivated by annealing, which is beneficial to preventing carrier recombination and improving cell conversion efficiency.

The embodiment of the invention provides a surface treatment method of an amorphous silicon film, a preparation method of a solar cell and the solar cell, and the surface treatment method of the amorphous silicon film comprises the steps: obtaining a silicon wafer, and sequentially depositing a tunneling oxide layer and a phosphorus-doped amorphous silicon film on the back surface of the silicon wafer; carrying out pre-crystallization on the amorphous silicon thin film by adopting continuous laser with the wavelength of 492 to 577nm; and carrying out annealing treatment on the pre-crystallized amorphous silicon thin film. According to the embodiment of the invention, the continuous laser in a specific wavelength range is adopted to process the amorphous silicon film, because the instantaneous heating rate is high, a part of the amorphous silicon film is crystallized in advance, and at the moment, a part of hydrogen is still remained in the film, the annealing process is further optimized to be matched with the previous laser treatment, so that auger recombination can be reduced, and the production efficiency is improved. And hydrogen in the film can be fully released to passivate the surface defects of the silicon wafer, so that the passivation effect is improved.

The invention relates to the technical field of electro-catalytic materials, in particular to an iron monatomic catalyst with a hydrogen passivated carbon edge, a preparation method and application, iron in the catalyst is anchored in a nitrogen-doped carbon carrier in an atomic-scale dispersion form, Fe-N4 active sites are formed, and rich active centers are provided; the nitrogen-doped carbon carrier has a rich edge structure, and carbon atoms on the edge structure are passivated by hydrogen atoms. The abundant edge structure provides an open coordination environment and relatively high electron density for Fe-N4 active sites, and is beneficial to adsorption and activation of oxygen molecules. The hydrogen passivation treatment only aims at edge carbon atoms, does not change the geometrical configuration of Fe-N4 active sites, does not generate negative effects on the catalytic activity of the Fe-N4 active sites, can enable the catalyst to still show excellent oxygen reduction reaction catalytic activity on the premise of keeping high stability, and realizes perfect balance of activity and stability.

A display device includes: a light emitting element on a substrate; a third-first transistor and a third-second transistor connected in series between a gate electrode of the first transistor and a drain electrode of the first transistor; a first metal layer on the substrate and comprising a gate electrode of the third-first transistor and a gate electrode of the third-second transistor; a hydrogen passivation layer on the first metal layer; a semiconductor region of each of a first transistor, the third-first transistor, and the third-second transistor on the hydrogen passivation layer; a gate electrode on the capping layer; a first bias electrode on a same layer as the gate electrode of the first transistor and overlapping the semiconductor region of the third-first transistor; and a second bias electrode on a same layer as the first bias electrode and overlapping the semiconductor region of the third-second transistor.

The application provides a perovskite crystalline silicon laminated solar cell and a preparation method thereof. The method comprises the following steps: preparing a Topcon precursor cell comprising a front surface passivation contact structure and a back surface passivation anti-reflection structure, sequentially depositing and removing an oxide layer on the n-type doped polycrystalline silicon layer, repeating the above-mentioned sequentially depositing and removing oxide layer steps for several times to obtain a hydrogen passivated n-type doped polycrystalline silicon layer, forming an intermediate layer on the surface of the hydrogen passivated n-type doped polycrystalline silicon layer, and combining a perovskite top cell on the surface of the intermediate layer to obtain the perovskite crystalline silicon laminated solar cell. The application replaces the silicon nitride anti-reflection layer on the N surface of the traditional Topcon silicon bottom cell with a multilayer oxide layer, thereby effectively avoiding the adverse effects of the silicon nitride anti-reflection layer which is difficult to remove on the perovskite crystalline silicon laminated solar cell.

The invention belongs to the field of solar photovoltaics, and provides a TOPCon composite perovskite laminated cell and a preparation method thereof.According to the laminated cell, on the basis that a polycrystalline silicon layer is thinned, hydrogen passivation of the polycrystalline silicon layer is achieved by arranging a hydrogenated PN junction, the polycrystalline silicon layer can also be effectively used as a middle connecting layer, and therefore the performance of the polycrystalline silicon layer is improved. Therefore, tunneling recombination of carriers in the laminated device is realized. According to the laminated cell, the traditional tedious steps and process dependence of back SiNx manufacturing and hydrogen passivation and fine removal are abandoned, the bad influence caused by HF acid post-treatment is eliminated, meanwhile, the traditional scheme of forming a middle connecting layer by ITO sputtering is abandoned, the influence of sputtering damage on a device is avoided, and the production efficiency is improved. And the performance of the bottom cell and the laminated cell and the repeatability and expandability of production and manufacturing are ensured.

The utility model discloses a solar cell, which is applied to the field of photovoltaic technology and comprises a cell sheet. A cutting surface is formed on the side surface of at least one side of the battery piece; at least one first passivation layer and at least one second passivation layer are arranged on the cutting surface in a layered manner; the first passivation layer is a field passivation layer; the second passivation layer is a hydrogen passivation layer. According to the utility model, two passivation layers with different effects of field passivation and hydrogen passivation are arranged on the cutting surface along the thickness direction in a layered manner, so that the passivation protection effect on the cutting surface is improved.

The present disclosure is applicable to the technical field of solar cells, and provides a passivated contact structure, a solar cell, a module, and a system. The passivated contact structure of a solar cell includes: a silicon substrate; and a first silicon oxide layer, a doped layer, a second silicon dioxide layer and a passivation layer, which are sequentially disposed on the silicon substrate, wherein a local region of the first silicon oxide layer includes a thinned region, and the proportion of a silicon oxide content in the first silicon oxide layer is reduced in the thinned region. Thus, the thinning of the local region of the first silicon oxide layer allows H to quickly pass through, so that a H passivation effect can be effectively improved, and the heat treatment control difficulty is reduced.

The application provides a wafer caching device, a method and a vertical batch epitaxy process device. The heating unit of the wafer caching device forms a vacuum in the temporary storage cavity before hydrogen passivation, can remove the atmosphere and impurities in the temporary storage cavity, avoids the surface of the wafer from being oxidized in the initial stage, heats the wafer to an initial temperature at the beginning of hydrogen passivation, dynamically maintains the temperature of the wafer between the initial temperature and a terminal temperature during hydrogen passivation, the gas input unit inputs a mixed gas of nitrogen and hydrogen into the temporary storage cavity during hydrogen passivation, the vacuum unit extracts the nitrogen and hydrogen in the temporary storage cavity during hydrogen passivation, and the pressure of the temporary storage cavity is maintained to be not lower than 100 torr in combination with the gas input unit, so that the surface of the wafer is hydrogen passivated, and the surface of the wafer is prevented from being oxidized during long-time waiting.

The invention discloses a method for growing a tunneling oxide layer of an XBC battery, and relates to the technical field of XBC battery manufacturing, and the method comprises the steps: enabling a silicon wafer to enter a furnace tube after cleaning, and setting the standby temperature of the furnace tube to be 450 DEG C; vacuumizing, raising the temperature of the furnace tube to 500-530 DEG C, controlling the pressure of the furnace tube to be low pressure, and respectively introducing nitrogen and oxygen carrying water vapor to grow a first tunneling oxide layer; after the growth is finished, the furnace tube starts to be heated and vacuumized, and the furnace tube is purged by nitrogen and vacuumized; raising the temperature of the furnace tube to 600-630 DEG C, introducing oxygen at the same time, closing the vacuum pump to stop vacuumizing operation, and enabling the pressure of the furnace tube to return to normal pressure to grow a second tunneling oxide layer; and after the growth is finished, purging and vacuumizing. The low-temperature growth stage can avoid thermal damage to the silicon wafer caused by high temperature in the traditional process, the yield of the silicon wafer is improved, hydrogen ions in wet oxygen can achieve hydrogen passivation, and the passivation performance of the tunneling oxide layer is improved by matching with the dense oxide layer grown in dry oxygen, so that the photoelectric conversion efficiency of the XBC battery is improved.