37 results about "Hydrogen passivation" patented technology

The invention provides a process method for improving the performance of a beta-Ga2O3 device through low-energy proton irradiation, and relates to the technical field of electronic components, and the method comprises the following steps: carrying out low-energy proton irradiation on the basis of irradiation experiment parameters at a preset environment temperature; low-energy proton irradiation with different fluence is carried out on the beta-Ga2O3 Schottky diode in a preset incidence mode to determine irradiation process data, and in combination with deep level transient spectroscopy (DLTS) analysis and device simulation, defect evolution and a hydrogen passivation mechanism caused in a beta-Ga2O3 epitaxial layer after low-energy proton incidence are revealed. According to the method, the cognitive limitation that traditional radiation must cause performance degradation of devices is broken through, and the field of low-energy proton irradiation which is not fully researched is focused.

The invention provides a solar cell and a photovoltaic module, and relates to the technical field of photovoltaics. The solar cell includes: a cell body including a first surface and a second surface opposite to each other in a thickness direction thereof, and a side surface connecting the first surface and the second surface, the side surface including a cut surface and a non-cut surface; and a cutting surface passivation layer formed on the cutting surface, wherein the cutting surface passivation layer is provided with a plurality of first microstructures protruding along the direction away from the battery body. In the invention, firstly, the hydrogen content in the passivation layer of the cutting surface is relatively high, and the hydrogen passivation effect and the field passivation effect are good; secondly, the convex first microstructure has an uneven surface, so that the light trapping effect of the passivation layer on the cutting surface can be improved; and thirdly, the convex first microstructures can also play a role in dispersing stress, so that stress concentration is avoided, and the risk of cracking or breaking is reduced.

An offshore hydrogen production platform hydrogen production equipment cooling system comprises a gas-liquid treater, a hydrogen purification device, a chilled water machine, a hydrogen compressor and a hydrogenation machine, an inlet of the gas-liquid treater is connected with an electrolytic bath, and an outlet of the gas-liquid treater is sequentially connected with a hydrogen passivation device, the hydrogen compressor, a buffer gas tank, the hydrogen compressor, a hydrogen storage tank and the hydrogenation machine. The hydrogen adding machine is communicated with the hydrogen-powered ship and provides hydrogen for the hydrogen-powered ship, and the refrigerating unit is connected with the hydrogen passivating device through a pipeline to form a circulating pipeline. Aiming at the characteristics of offshore and shallow sea areas and a fixed hydrogen production platform, when hydrogen production equipment is cooled, required fresh water is provided through cooling of the air cooling radiator arranged on the main deck of the platform, so that the situation that seawater with poor cleanliness in the offshore and shallow sea areas flows through a plate heat exchanger to cool the fresh water to be provided is avoided; the cooling efficiency is improved.

This application provides a passivation structure and its preparation method, as well as a silicon solar cell and its preparation method. The passivation structure includes a first aluminum oxide layer, a first aluminum nitride layer, a second aluminum oxide layer, and a second aluminum nitride layer stacked together. The first aluminum oxide layer directly contacts the silicon edge and repairs cutting damage and dangling bonds through chemical passivation. It adapts to the p-type silicon region with a negative fixed charge. The first aluminum nitride layer passivates the n-type silicon with a positive fixed charge. The high hydrogen content enhances defect repair, and the dense structure blocks impurities from intruding. The second aluminum oxide layer supplements the negative charge to improve the passivation effect of the p-type silicon and forms stress complementarity with the aluminum nitride layer to prevent film cracking. The second aluminum nitride layer resists stringing and lamination damage, blocks moisture and corrosion, and ensures long-term performance. This structure achieves optimal simultaneous passivation of p / n-type silicon through charge complementarity and synergistic hydrogen passivation, improving the minority carrier lifetime at the cell edge, the implicit open-circuit voltage, and the module power, and solving the pain points of incomplete passivation and poor stability.

The invention provides a passivation method and a preparation method of a solar cell, a photovoltaic module and a photovoltaic system. The passivation method comprises the following steps: depositing a passivation layer on the surface of a P-type doping layer; heating the solar cell to a first preset temperature; depositing an antireflection layer on the surface of the passivation layer; after the antireflection layer is formed, the solar cell is heated to a second preset temperature for annealing, and the first preset temperature and the second preset temperature are both higher than the deposition temperature when the antireflection layer is formed. According to the passivation method of the solar cell, part of redundant hydrogen generated in aluminum oxide and silicon nitride is slowly released in advance at the temperature higher than the deposition temperature between and after the deposition of the antireflection layer, and generation of poor film explosion is avoided. Meanwhile, the compactness of the thin film layer is increased to a certain extent, a good protection barrier is formed for hydrogen passivation, UV attenuation is improved, and UV60 attenuation is reduced to 0.64% from 0.94% in the past.

The invention provides a low-temperature passivation method and application of a BC battery, and relates to the technical field of solar batteries. Specifically, the method comprises the following steps: sequentially depositing on the surface of a silicon substrate to obtain a La-doped Al2O3 layer, a SiO2 layer and an F-doped SiNx layer, and further obtaining a silicon material loaded with a three-layer passivation structure; all deposition temperatures in the low-temperature passivation method are less than or equal to 180 DEG C. The ultralow-temperature passivation process is provided for the back contact solar cell, the plasma-assisted ALD deposition process and the material doping modification method are innovatively combined, the temperature of the passivation process is reduced to 180 DEG C or below, and meanwhile the efficient passivation effect that iVoc is larger than or equal to 738 mV is achieved; and the problems of electrode warping, interface composite defects or unstable hydrogen passivation and the like caused by a high-temperature process are effectively solved.

The application provides a surface passivation treatment method for optimizing a tunneling oxide passivation battery, which comprises the following steps: in a BOE cleaning step, placing an annealed silicon wafer into a mixed solution of a tank cleaning device, cleaning the silicon wafer in the mixed solution for more than 120s, taking out the silicon wafer and cleaning the silicon wafer with sufficient DIW, then placing the silicon wafer into an acid solution, taking out the silicon wafer and cleaning the silicon wafer with a large amount of DIW, and bubbling in the cleaning process, and finally passivating the surface of the silicon wafer by using an (NH4)2S solution; and in a reflection reduction film manufacturing step, the reflection reduction film is divided into three layers for preparation. The application utilizes sulfur passivation of the P-type emitter of the battery, assists accumulation of negative charges of aluminum oxide to enhance the field passivation effect, passivates the silicon surface dangling bond, releases the process window reduction caused by the accumulation of [H] source for hydrogen passivation in the preparation process of silicon nitride, and reduces the performance attenuation caused by the escape of [H] in the long-term use of the battery assembly.

The invention discloses a photovoltaic module preparation method and a photovoltaic module, and belongs to the field of photovoltaic technology, and the method comprises the steps: carrying out the series welding and typesetting of battery pieces, carrying out the series welding and typesetting of at least two battery pieces provided with substrates and passivation layers, and obtaining a battery string layer; ultraviolet light irradiation: irradiating the surface of the cell string layer by adopting ultraviolet light with preset cumulative irradiation dose and preset temperature so as to enable the passivation layer to release free hydrogen elements, and enabling the free hydrogen elements to react with dangling bonds in the substrate to form first chemical bonds; the preset cumulative irradiation amount of the ultraviolet light is 0.0001 kWh / m < 2 >-1 kWh / m < 2 > and comprises values at two ends; the preset temperature is 25-200 DEG C and comprises the values of the two ends, and obtaining the ultraviolet-irradiated battery string layer. According to the invention, the hydrogen passivation on the surface of the substrate can be improved, the fixed charge is enhanced, the interface state density is reduced, the open-circuit voltage and the fill factor can be improved, and finally the photoelectric conversion efficiency of the assembly can be improved.

This invention relates to an annealing apparatus and method for HIT (High-Intensity Interval) solar cells. The apparatus includes: a furnace body with an internal cavity capable of accommodating solar cells coated with silver paste; a light source connected to the furnace body for irradiating the silver-painted solar cells to anneal them; wherein the wavelength range of the light source is between 300-750 nm; and an exhaust system including an inlet, a supply outlet, and an outlet; the inlet is located within the furnace body and is connected to the supply outlet, which is located inside the furnace body; the outlet is located on the furnace body to exhaust gases from the furnace. This invention adds a 300-750 nm spectral light source to irradiate the top (or bottom) of the HIT cell, which helps to anneal H (high-intensity interval) cells present in the silicon and interface layer. + Convert to H 0 This achieves the effects of enhanced annealing and hydrogen passivation.

The invention relates to the technical field of photovoltaics, in particular to a hydrogen ion control method in a battery sintering process, which comprises the following steps of: judging target-state hydrogen ions required by a silicon substrate according to the type of a doping interface of the silicon substrate, and enabling a hydrogen-containing passivation film layer to at least load the target-state hydrogen ions; in the sintering process of the silicon substrate, applying a parallel magnetic field parallel to the silicon substrate and a vertical magnetic field vertical to the silicon substrate to the silicon substrate and the hydrogen-containing passivation film layer; the parallel magnetic field is used for controlling target-state hydrogen ions to move towards the silicon substrate; hydrogen ions with the polarity opposite to that of the target-state hydrogen ions are marked as non-target-state hydrogen ions; the vertical magnetic field is used for enabling non-target-state hydrogen ions to be far away from a grid line of the hydrogen-containing passivation film layer; through a parallel magnetic field, target-state hydrogen ions are directionally driven to a corresponding interface according to the doped interface difference of a silicon substrate, and defect passivation is strengthened; and non-target hydrogen is repelled by a vertical magnetic field, so that the non-target hydrogen is prevented from interfering metal grid line contact, and the battery efficiency and reliability are effectively improved.

The present application discloses a back contact solar cell and a photovoltaic module. In one example, a back contact solar cell includes a semiconductor substrate, a first doped semiconductor part, a second doped semiconductor part, a first dielectric passivation layer, and a second dielectric passivation layer. Each of the first dielectric passivation layer and the second dielectric passivation layer includes a first passivation sub-layer having a field passivation function. A conductivity type of the first doped semiconductor part is opposite to that of fixed charges of the first passivation sub-layer. Each of the first dielectric passivation layer and the second dielectric passivation layer further includes a second passivation sub-layer having a chemical passivation function. The first passivation sub-layer of the first dielectric passivation layer includes a hydrogen-containing passivation layer. A portion of the hydrogen-containing passivation layer has micro-structures.

The invention discloses a solar cell and a photovoltaic module, and belongs to the technical field of photovoltaics. A cutting surface is formed on at least one side surface of the battery piece, and the side surfaces of the battery piece except the cutting surface are non-cutting surfaces; the non-cutting surface is provided with a first passivation layer and a second passivation layer which are sequentially arranged in the direction away from the non-cutting surface, the second passivation layer is a hydrogen passivation layer, and the first passivation layer and the second passivation layer do not cover the cutting surface; the cutting surface is provided with a third passivation layer; the third passivation layer is plated around a non-cutting surface adjacent to the cutting surface and covers part of the second passivation layer; and the ratio of the winding plating length of the third passivation layer to the overall length of the non-cutting surface subjected to winding plating is 1 / 60-1 / 8 and comprises values at the two ends. The three-layer laminated passivation film layer structure is formed in the side edge winding plating area, and the laminated passivation film layer structure is beneficial to preventing hydrogen from overflowing, so that the passivation stability of the cutting surface is improved.

The invention discloses a passivation method of a back contact cell, the back contact cell and a photovoltaic module. The passivation method of the back contact battery comprises the steps that ultraviolet laser is adopted for conducting laser treatment on a P area and an N area on the back face of the back contact battery, the power density of the ultraviolet laser acting on the P area is higher than that of the ultraviolet laser acting on the N area, and / or the power density of the ultraviolet laser acting on the N area is lower than that of the P area. The processing time of the ultraviolet laser acting on the P region is longer than the processing time of the ultraviolet laser acting on the N region; and carrying out laser treatment on the back surface of the back contact battery by adopting visible laser. Therefore, the back surface of the back contact battery is subjected to zoning treatment by adopting ultraviolet laser, the hydrogen passivation effect of the N region and the P region can be improved, impurities and defects are reduced, the carrier recombination rate is reduced, and a defect structure caused by excessive hydrogen sources is not easy to generate; compared with ultraviolet laser, the penetration depth of the visible laser is deeper, hydrogen passivation treatment can be performed on the silicon substrate, and the passivation effect of the silicon substrate is improved.

The utility model relates to the technical field of solar cells, and discloses a hydrogen passivation composite film for a solar cell, the solar cell, an assembly of the solar cell and a power station. The hydrogen passivation composite film for the solar cell comprises a silicon wafer and a silicon nitride film arranged on the surface of the silicon wafer, a first TiOx layer is arranged on the surface of the silicon nitride film, and the molar ratio of titanium atoms to oxygen atoms in the first TiOx layer is 0.1-0.5; a selective second TiOx layer is also arranged in a local area of the surface of the first TiOx layer, and the molar ratio of titanium atoms to oxygen atoms in the second TiOx layer is 1.5-3. According to the hydrogen passivation composite film for the solar cell, the first TiOx layer and the selective second TiOx layer are sequentially arranged on the silicon nitride film, so that the problem that hydrogen in the silicon nitride film overflows outwards can be solved, the function of preventing the hydrogen from overflowing is achieved, and the chemical passivation effect of a silicon wafer of the solar cell is improved; the method has the advantages of simple process, low cost, good blocking effect on metal slurry, reduction of the thickness of the polycrystalline silicon layer, reduction of parasitic absorption, and improvement of the double-sided rate, the open-circuit voltage and the cell efficiency.

The application discloses a solar cell, a preparation method thereof and a solar cell module. The solar cell comprises a silicon substrate, a tunneling oxide layer arranged on at least one side surface of the silicon substrate, and a doped layer arranged on a side of the tunneling oxide layer away from the silicon substrate. The doped layer comprises a doped polysilicon layer and a doped amorphous silicon / microcrystalline silicon layer arranged at intervals in a first direction, and the doped polysilicon layer and the doped amorphous silicon / microcrystalline silicon layer on the same side of the silicon substrate have the same doping type. The tunneling oxide layer and the doped amorphous silicon / microcrystalline silicon layer are adopted in a non-metal region, high passivation effect can be achieved only by a subsequent hydrogen passivation process without a high-temperature annealing process, and optical parasitic absorption can be effectively reduced. Meanwhile, the doped film layer in a metal region is subjected to laser annealing to obtain a doped polysilicon layer, the activated concentration of a doped element is improved, and the contact resistivity is effectively reduced.

This invention provides a perovskite solar cell, its fabrication method, and a three-terminal tandem solar cell, specifically relating to the field of solar cell fabrication technology. The fabrication method for this perovskite solar cell involves first preparing a first transport layer on a silicon substrate. Using atomic layer deposition (ALD) technology, a perovskite thin film is formed on the surface of the first transport layer, followed by in-situ annealing to obtain a perovskite absorber layer. Then, a second transport layer, a buffer layer, and a transparent conductive layer are sequentially fabricated on the surface of the perovskite absorber layer to obtain the perovskite solar cell. ALD's self-limiting reaction is insensitive to silicon textured surfaces, overcoming the bottleneck of uneven film formation in traditional processes. This results in a perovskite layer with precise thickness, dense density without pinholes, and consistent grain orientation, significantly suppressing interface / bulk recombination and improving carrier lifetime. In-situ annealing avoids thermal damage and promotes hydrogen passivation of the silicon surface, synergistically improving Voc and FF.

The application discloses a hydrogen passivation method for a solar cell and application thereof, and belongs to the technical field of solar cells. The method comprises at least twice hydrogen passivation, at least once of which is carried out before printing after a back film and at least once of which is carried out after sintering before printing after the back film. Light injection hydrogen passivation is carried out before printing after the back film, hydrogen atoms in a silicon nitride passivation film are activated by temperature rising, then the valence state of the hydrogen atoms is controlled by light irradiation, so that the hydrogen atoms are combined with a P emitter and an N-type base and a recombination center (a defect) to form a non-recombination center, a preliminary passivation effect is achieved, then secondary hydrogen passivation is carried out by electric injection or light injection after printing and sintering, damage caused by a sintering high-temperature process to passivation effect of a cell piece can be repaired to the maximum extent, the adverse effect of a sintering procedure on hydrogen passivation is improved, the conversion efficiency of the cell piece is improved, and the light-induced degradation resistance is improved.

The invention relates to the technical field of solar cells, in particular to a solar cell, a preparation method thereof and a photovoltaic module. The solar cell comprises a silicon substrate, a doping layer, an oxygen-containing passivation layer, a hydrogen-containing passivation layer, an aluminum nitride layer and an antireflection layer. The silicon substrate has a light receiving surface. The doping layer, the oxygen-containing passivation layer, the hydrogen-containing passivation layer, the aluminum nitride layer and the antireflection layer are sequentially stacked on the light receiving surface in the direction away from the silicon substrate. According to the solar cell, the influence of ultraviolet rays on the chemical passivation effect can be reduced, the early degradation risk of the solar cell is further reduced, the conversion efficiency attenuation rate of the solar cell is slowed down, the service life of a photovoltaic module using the solar cell is prolonged, and the working efficiency of the photovoltaic module is improved.

The application provides a passivation method of a solar cell, a solar cell and a photovoltaic module, which can be widely applied to the technical field of solar cells. The passivation method of the solar cell comprises the following steps: performing light treatment and electric treatment on a silicon substrate to form a cell piece; depositing a preset material on the surface of the cell piece to form a hydrogen supplement layer; wherein the preset material is different from the film layer material on the surface of the cell piece; the preset material contains hydrogen; performing annealing treatment on the cell piece containing the hydrogen supplement layer to passivate defect areas in the hydrogen in the preset material; and etching the hydrogen supplement layer by using a preset chemical agent to obtain a cell piece after hydrogen passivation. Before testing the cell piece, the hydrogen supplement layer is arranged on the surface of the cell piece, and the defect areas of the cell piece are passivated by annealing, which is beneficial to preventing carrier recombination and improving cell conversion efficiency.

The embodiment of the invention provides a surface treatment method of an amorphous silicon film, a preparation method of a solar cell and the solar cell, and the surface treatment method of the amorphous silicon film comprises the steps: obtaining a silicon wafer, and sequentially depositing a tunneling oxide layer and a phosphorus-doped amorphous silicon film on the back surface of the silicon wafer; carrying out pre-crystallization on the amorphous silicon thin film by adopting continuous laser with the wavelength of 492 to 577nm; and carrying out annealing treatment on the pre-crystallized amorphous silicon thin film. According to the embodiment of the invention, the continuous laser in a specific wavelength range is adopted to process the amorphous silicon film, because the instantaneous heating rate is high, a part of the amorphous silicon film is crystallized in advance, and at the moment, a part of hydrogen is still remained in the film, the annealing process is further optimized to be matched with the previous laser treatment, so that auger recombination can be reduced, and the production efficiency is improved. And hydrogen in the film can be fully released to passivate the surface defects of the silicon wafer, so that the passivation effect is improved.

The invention relates to the technical field of metal materials, and discloses a deep-sea high-pressure-resistant hydrogen embrittlement-resistant titanium alloy pipe and a manufacturing method thereof.The deep-sea high-pressure-resistant hydrogen embrittlement-resistant titanium alloy pipe comprises a titanium alloy, and the chemical composition of the deep-sea high-pressure-resistant hydrogen embrittlement-resistant titanium alloy pipe comprises, by weight, 5.0-6.0 parts of aluminum, 2.5-3.5 parts of vanadium, 0.7-1.3 parts of molybdenum, 0.5-1.1 parts of niobium, 0.2-0.4 part of gadolinium, 0.05-0.15 part of tin and the balance titanium and inevitable impurities. The manufacturing method comprises the steps of smelting and ingot manufacturing, blank forging, ultrasonic-assisted multi-stage solid-phase rotary extrusion forming and stress relief annealing. Molybdenum, niobium and gadolinium elements are added into the titanium alloy, an ultrasonic-assisted multi-stage solid-phase rotary extrusion process is combined, a composite oxide film for inhibiting hydrogen permeation is formed on the surface of the alloy, and meanwhile, a nanoscale intermetallic compound capable of reversibly absorbing and desorbing hydrogen is formed in a matrix through in-situ induction to serve as a hydrogen capture trap. The titanium alloy pipe prepared by the method has a superfine grain structure, and the coordination of double hydrogen embrittlement-resistant mechanisms of internal hydrogen buffering and surface hydrogen passivation is realized.

The invention discloses a solar cell hydrogen passivation method, a preparation method and a solar cell, in the invention, hydrogen passivation is carried out on a solar cell piece by adopting a light injection mode, and meanwhile, a front metal grid line and a back metal grid line of the solar cell piece are communicated through an electric connection structure, so that a photo-generated current loop is formed; the photo-generated current is injected into the solar cell again, the hydrogen passivation effect generated by the photo-generated current can be matched with the hydrogen passivation effect generated by light injection, and meanwhile, the hydrogen is driven to reach the silicon interface by the injection of the photo-generated current, so that the hydrogen passivation effect of the light injection is further enhanced, and the hydrogen passivation effect of the light injection can be further improved while the hydrogen passivation effect is ensured. And the hydrogen passivation temperature and illumination intensity are reduced. According to the invention, an external power supply controller is not needed in the electric connection structure, external current injection is not needed, and more energy and cost are saved.

The invention relates to the technical field of electro-catalytic materials, in particular to an iron monatomic catalyst with a hydrogen passivated carbon edge, a preparation method and application, iron in the catalyst is anchored in a nitrogen-doped carbon carrier in an atomic-scale dispersion form, Fe-N4 active sites are formed, and rich active centers are provided; the nitrogen-doped carbon carrier has a rich edge structure, and carbon atoms on the edge structure are passivated by hydrogen atoms. The abundant edge structure provides an open coordination environment and relatively high electron density for Fe-N4 active sites, and is beneficial to adsorption and activation of oxygen molecules. The hydrogen passivation treatment only aims at edge carbon atoms, does not change the geometrical configuration of Fe-N4 active sites, does not generate negative effects on the catalytic activity of the Fe-N4 active sites, can enable the catalyst to still show excellent oxygen reduction reaction catalytic activity on the premise of keeping high stability, and realizes perfect balance of activity and stability.

A display device includes: a light emitting element on a substrate; a third-first transistor and a third-second transistor connected in series between a gate electrode of the first transistor and a drain electrode of the first transistor; a first metal layer on the substrate and comprising a gate electrode of the third-first transistor and a gate electrode of the third-second transistor; a hydrogen passivation layer on the first metal layer; a semiconductor region of each of a first transistor, the third-first transistor, and the third-second transistor on the hydrogen passivation layer; a gate electrode on the capping layer; a first bias electrode on a same layer as the gate electrode of the first transistor and overlapping the semiconductor region of the third-first transistor; and a second bias electrode on a same layer as the first bias electrode and overlapping the semiconductor region of the third-second transistor.

This application relates to the solar cell technology field and provides a passivation contact structure, a solar cell, a module, and a system. The passivation contact structure for a solar cell includes a silicon substrate and a first silicon oxide layer, a doped layer, a second silicon oxide layer, and a passivation layer sequentially disposed on the silicon substrate. The first silicon oxide layer includes a dilute region in a localized area, and the silicon oxide material content in the first silicon oxide layer is reduced in the dilute region. In this way, the dilute region in the first silicon oxide layer allows high-speed passage of H, effectively improving the H passivation effect and reducing the difficulty of heat treatment control.

The invention discloses a GaAs-based long-wavelength avalanche photodiode and a preparation method thereof, and relates to the technical field of semiconductors, the GaAs-based long-wavelength avalanche photodiode comprises a GaAs substrate, a deformation growth layer and an InP-based APD functional layer; the deformation growth layer is used for realizing lattice constant transition from the GaAs substrate to the InP-based APD functional layer; the InP-based APD functional layer comprises an n-type contact layer, a multiplication layer, a charge layer, a gradient layer, an absorption layer and a window layer, and the charge layer is formed by injecting C elements into an intrinsic material layer through ions. According to the invention, the deformation growth layer is integrated on the GaAs substrate and cooperates with a special charge layer process, so that a set of complete low-cost and high-performance solution is constructed; the fundamental lattice mismatch problem of growing a high-quality InP-based material on a cheap substrate is solved, and monolithic integration is realized; the hydrogen passivation problem of traditional doping is eliminated, and accurate and stable control over breakdown voltage and gain is achieved; the combination of the two realizes significant breakthrough in cost, performance and reliability of the long-wavelength APD.

The invention provides wafer caching equipment, a wafer caching method and vertical batch type epitaxial process equipment. The heating unit of the wafer caching equipment enables the interior of the temporary storage cavity to be vacuum before hydrogen passivation, atmosphere and impurities in the temporary storage cavity can be removed, the surface of the wafer is prevented from being oxidized in the initial stage, the wafer is heated to the initial temperature by the heating unit when hydrogen passivation starts, and in the hydrogen passivation process, the surface of the wafer is heated to the initial temperature by the heating unit. The temperature of the wafer is dynamically maintained between the initial temperature and the final temperature, the gas input unit introduces mixed gas of nitrogen and hydrogen into the temporary storage cavity during hydrogen passivation, the vacuum unit extracts the nitrogen and the hydrogen in the temporary storage cavity during hydrogen passivation, and the pressure of the temporary storage cavity is maintained to be not lower than 100 torr in combination with the gas input unit; and hydrogen passivation is realized on the surface of the wafer, so that the surface of the wafer is prevented from being oxidized during long-time waiting.

The application provides a perovskite crystalline silicon laminated solar cell and a preparation method thereof. The method comprises the following steps: preparing a Topcon precursor cell comprising a front surface passivation contact structure and a back surface passivation anti-reflection structure, sequentially depositing and removing an oxide layer on the n-type doped polycrystalline silicon layer, repeating the above-mentioned sequentially depositing and removing oxide layer steps for several times to obtain a hydrogen passivated n-type doped polycrystalline silicon layer, forming an intermediate layer on the surface of the hydrogen passivated n-type doped polycrystalline silicon layer, and combining a perovskite top cell on the surface of the intermediate layer to obtain the perovskite crystalline silicon laminated solar cell. The application replaces the silicon nitride anti-reflection layer on the N surface of the traditional Topcon silicon bottom cell with a multilayer oxide layer, thereby effectively avoiding the adverse effects of the silicon nitride anti-reflection layer which is difficult to remove on the perovskite crystalline silicon laminated solar cell.

The invention belongs to the field of solar photovoltaics, and provides a TOPCon composite perovskite laminated cell and a preparation method thereof.According to the laminated cell, on the basis that a polycrystalline silicon layer is thinned, hydrogen passivation of the polycrystalline silicon layer is achieved by arranging a hydrogenated PN junction, the polycrystalline silicon layer can also be effectively used as a middle connecting layer, and therefore the performance of the polycrystalline silicon layer is improved. Therefore, tunneling recombination of carriers in the laminated device is realized. According to the laminated cell, the traditional tedious steps and process dependence of back SiNx manufacturing and hydrogen passivation and fine removal are abandoned, the bad influence caused by HF acid post-treatment is eliminated, meanwhile, the traditional scheme of forming a middle connecting layer by ITO sputtering is abandoned, the influence of sputtering damage on a device is avoided, and the production efficiency is improved. And the performance of the bottom cell and the laminated cell and the repeatability and expandability of production and manufacturing are ensured.

The utility model discloses a solar cell, which is applied to the field of photovoltaic technology and comprises a cell sheet. A cutting surface is formed on the side surface of at least one side of the battery piece; at least one first passivation layer and at least one second passivation layer are arranged on the cutting surface in a layered manner; the first passivation layer is a field passivation layer; the second passivation layer is a hydrogen passivation layer. According to the utility model, two passivation layers with different effects of field passivation and hydrogen passivation are arranged on the cutting surface along the thickness direction in a layered manner, so that the passivation protection effect on the cutting surface is improved.