5 results about "Hydrogen passivation" patented technology

This application provides a passivation structure and its preparation method, as well as a silicon solar cell and its preparation method. The passivation structure includes a first aluminum oxide layer, a first aluminum nitride layer, a second aluminum oxide layer, and a second aluminum nitride layer stacked together. The first aluminum oxide layer directly contacts the silicon edge and repairs cutting damage and dangling bonds through chemical passivation. It adapts to the p-type silicon region with a negative fixed charge. The first aluminum nitride layer passivates the n-type silicon with a positive fixed charge. The high hydrogen content enhances defect repair, and the dense structure blocks impurities from intruding. The second aluminum oxide layer supplements the negative charge to improve the passivation effect of the p-type silicon and forms stress complementarity with the aluminum nitride layer to prevent film cracking. The second aluminum nitride layer resists stringing and lamination damage, blocks moisture and corrosion, and ensures long-term performance. This structure achieves optimal simultaneous passivation of p / n-type silicon through charge complementarity and synergistic hydrogen passivation, improving the minority carrier lifetime at the cell edge, the implicit open-circuit voltage, and the module power, and solving the pain points of incomplete passivation and poor stability.

This invention provides a perovskite solar cell, its fabrication method, and a three-terminal tandem solar cell, specifically relating to the field of solar cell fabrication technology. The fabrication method for this perovskite solar cell involves first preparing a first transport layer on a silicon substrate. Using atomic layer deposition (ALD) technology, a perovskite thin film is formed on the surface of the first transport layer, followed by in-situ annealing to obtain a perovskite absorber layer. Then, a second transport layer, a buffer layer, and a transparent conductive layer are sequentially fabricated on the surface of the perovskite absorber layer to obtain the perovskite solar cell. ALD's self-limiting reaction is insensitive to silicon textured surfaces, overcoming the bottleneck of uneven film formation in traditional processes. This results in a perovskite layer with precise thickness, dense density without pinholes, and consistent grain orientation, significantly suppressing interface / bulk recombination and improving carrier lifetime. In-situ annealing avoids thermal damage and promotes hydrogen passivation of the silicon surface, synergistically improving Voc and FF.

The application provides a passivation method of a solar cell, a solar cell and a photovoltaic module, which can be widely applied to the technical field of solar cells. The passivation method of the solar cell comprises the following steps: performing light treatment and electric treatment on a silicon substrate to form a cell piece; depositing a preset material on the surface of the cell piece to form a hydrogen supplement layer; wherein the preset material is different from the film layer material on the surface of the cell piece; the preset material contains hydrogen; performing annealing treatment on the cell piece containing the hydrogen supplement layer to passivate defect areas in the hydrogen in the preset material; and etching the hydrogen supplement layer by using a preset chemical agent to obtain a cell piece after hydrogen passivation. Before testing the cell piece, the hydrogen supplement layer is arranged on the surface of the cell piece, and the defect areas of the cell piece are passivated by annealing, which is beneficial to preventing carrier recombination and improving cell conversion efficiency.

The application provides a perovskite crystalline silicon laminated solar cell and a preparation method thereof. The method comprises the following steps: preparing a Topcon precursor cell comprising a front surface passivation contact structure and a back surface passivation anti-reflection structure, sequentially depositing and removing an oxide layer on the n-type doped polycrystalline silicon layer, repeating the above-mentioned sequentially depositing and removing oxide layer steps for several times to obtain a hydrogen passivated n-type doped polycrystalline silicon layer, forming an intermediate layer on the surface of the hydrogen passivated n-type doped polycrystalline silicon layer, and combining a perovskite top cell on the surface of the intermediate layer to obtain the perovskite crystalline silicon laminated solar cell. The application replaces the silicon nitride anti-reflection layer on the N surface of the traditional Topcon silicon bottom cell with a multilayer oxide layer, thereby effectively avoiding the adverse effects of the silicon nitride anti-reflection layer which is difficult to remove on the perovskite crystalline silicon laminated solar cell.