48 results about "Hydrogen passivation" patented technology

The invention discloses a preparation method of a bottom cell of a perovskite / crystalline silicon laminated solar cell, which comprises the following steps of: providing a bottom cell precursor with a surface heavily doped silicon layer and / or an emitter layer exposed, and depositing a hydrogen-rich metal oxide layer on the front surface or double surfaces of the bottom cell precursor by adopting an ALD (Atomic Layer Deposition) method; depositing a hydrogen injection passivation layer on the emitter layer on the back surface of the bottom cell precursor by adopting a PECVD method; printing low-aluminum-content silver paste on the hydrogen injection passivation layer to obtain a metal electrode grid line, and drying, shaping and slightly sintering the metal electrode grid line; and placing the lightly sintered bottom cell precursor in LECO equipment, and carrying out single-sided LECO treatment on a back metal electrode of the bottom cell to obtain the bottom cell. The preparation method is simple, streamline production is easy, the bottom cell precursor does not need to be additionally processed, the bottom cell precursor on a production line can be cut out for back metal electrode preparation and subsequent single-side LECO processing, and preparation and removal of a front metal electrode of the bottom cell are not needed.

The invention provides a process method for improving the performance of a beta-Ga2O3 device through low-energy proton irradiation, and relates to the technical field of electronic components, and the method comprises the following steps: carrying out low-energy proton irradiation on the basis of irradiation experiment parameters at a preset environment temperature; low-energy proton irradiation with different fluence is carried out on the beta-Ga2O3 Schottky diode in a preset incidence mode to determine irradiation process data, and in combination with deep level transient spectroscopy (DLTS) analysis and device simulation, defect evolution and a hydrogen passivation mechanism caused in a beta-Ga2O3 epitaxial layer after low-energy proton incidence are revealed. According to the method, the cognitive limitation that traditional radiation must cause performance degradation of devices is broken through, and the field of low-energy proton irradiation which is not fully researched is focused.

The invention provides a solar cell and a photovoltaic module, and relates to the technical field of photovoltaics. The solar cell includes: a cell body including a first surface and a second surface opposite to each other in a thickness direction thereof, and a side surface connecting the first surface and the second surface, the side surface including a cut surface and a non-cut surface; and a cutting surface passivation layer formed on the cutting surface, wherein the cutting surface passivation layer is provided with a plurality of first microstructures protruding along the direction away from the battery body. In the invention, firstly, the hydrogen content in the passivation layer of the cutting surface is relatively high, and the hydrogen passivation effect and the field passivation effect are good; secondly, the convex first microstructure has an uneven surface, so that the light trapping effect of the passivation layer on the cutting surface can be improved; and thirdly, the convex first microstructures can also play a role in dispersing stress, so that stress concentration is avoided, and the risk of cracking or breaking is reduced.

The invention relates to the technical field of solar cells, and particularly discloses a method for improving UV attenuation of an N-type crystalline silicon solar cell and the N-type crystalline silicon solar cell. The method comprises the following steps: depositing an aluminum oxide film layer on the surface of N-type crystalline silicon; then, bombardment gas is adopted for conducting gas ionization bombardment treatment on the surface of the aluminum oxide film layer, and the bombardment gas is one or more combinations of laughing gas and rare gas and at least comprises laughing gas; and finally depositing a silicon nitride film layer. The laughing gas ionization bombardment can form a more compact aluminum nitride or aluminum oxynitride hydrogen blocking layer and release hydrogen, and the rare gas ionization bombardment can increase the negative charge density of the aluminum oxide film layer. Silicon nitride deposition, silk-screen printing, sintering and light injection processes do not need to be adjusted, no negative influence is caused on the short-circuit current and contact resistivity of the cell, the field passivation effect can be improved while the hydrogen passivation proportion is reduced, UV attenuation is effectively improved, and the full-life-cycle power generation amount of the cell is improved.

An offshore hydrogen production platform hydrogen production equipment cooling system comprises a gas-liquid treater, a hydrogen purification device, a chilled water machine, a hydrogen compressor and a hydrogenation machine, an inlet of the gas-liquid treater is connected with an electrolytic bath, and an outlet of the gas-liquid treater is sequentially connected with a hydrogen passivation device, the hydrogen compressor, a buffer gas tank, the hydrogen compressor, a hydrogen storage tank and the hydrogenation machine. The hydrogen adding machine is communicated with the hydrogen-powered ship and provides hydrogen for the hydrogen-powered ship, and the refrigerating unit is connected with the hydrogen passivating device through a pipeline to form a circulating pipeline. Aiming at the characteristics of offshore and shallow sea areas and a fixed hydrogen production platform, when hydrogen production equipment is cooled, required fresh water is provided through cooling of the air cooling radiator arranged on the main deck of the platform, so that the situation that seawater with poor cleanliness in the offshore and shallow sea areas flows through a plate heat exchanger to cool the fresh water to be provided is avoided; the cooling efficiency is improved.

This application provides a passivation structure and its preparation method, as well as a silicon solar cell and its preparation method. The passivation structure includes a first aluminum oxide layer, a first aluminum nitride layer, a second aluminum oxide layer, and a second aluminum nitride layer stacked together. The first aluminum oxide layer directly contacts the silicon edge and repairs cutting damage and dangling bonds through chemical passivation. It adapts to the p-type silicon region with a negative fixed charge. The first aluminum nitride layer passivates the n-type silicon with a positive fixed charge. The high hydrogen content enhances defect repair, and the dense structure blocks impurities from intruding. The second aluminum oxide layer supplements the negative charge to improve the passivation effect of the p-type silicon and forms stress complementarity with the aluminum nitride layer to prevent film cracking. The second aluminum nitride layer resists stringing and lamination damage, blocks moisture and corrosion, and ensures long-term performance. This structure achieves optimal simultaneous passivation of p / n-type silicon through charge complementarity and synergistic hydrogen passivation, improving the minority carrier lifetime at the cell edge, the implicit open-circuit voltage, and the module power, and solving the pain points of incomplete passivation and poor stability.

The present invention specifically discloses a PECVD process for improving the film explosion of TOPCON batteries, comprising the following steps: (1) placing a graphite boat filled with silicon wafers in a furnace tube; (2) filling the furnace tube with nitrogen for protection; (3) performing step-by-step heating and constant-temperature hydrogen passivation treatment; (4) evacuating the furnace tube; (5) introducing NH3 and N2O into the furnace tube for ionization; (6) depositing silicon nitride; (7) evacuating the furnace tube and filling the furnace tube with nitrogen to return to atmospheric pressure; and (8) transporting the graphite boat out of the furnace tube. The present invention effectively reduces the film explosion rate of TOPCon batteries during the preparation process and improves the efficiency of the battery; in particular, by step-by-step heating and adding nitrous oxide and ammonia ionization before the silicon nitride film layer, N-H bonds are formed inside the film layer, thereby reducing hydrogen overflow and improving film explosion, thereby achieving a better hydrogen passivation effect.

The invention provides a passivation method and a preparation method of a solar cell, a photovoltaic module and a photovoltaic system. The passivation method comprises the following steps: depositing a passivation layer on the surface of a P-type doping layer; heating the solar cell to a first preset temperature; depositing an antireflection layer on the surface of the passivation layer; after the antireflection layer is formed, the solar cell is heated to a second preset temperature for annealing, and the first preset temperature and the second preset temperature are both higher than the deposition temperature when the antireflection layer is formed. According to the passivation method of the solar cell, part of redundant hydrogen generated in aluminum oxide and silicon nitride is slowly released in advance at the temperature higher than the deposition temperature between and after the deposition of the antireflection layer, and generation of poor film explosion is avoided. Meanwhile, the compactness of the thin film layer is increased to a certain extent, a good protection barrier is formed for hydrogen passivation, UV attenuation is improved, and UV60 attenuation is reduced to 0.64% from 0.94% in the past.

The invention provides a low-temperature passivation method and application of a BC battery, and relates to the technical field of solar batteries. Specifically, the method comprises the following steps: sequentially depositing on the surface of a silicon substrate to obtain a La-doped Al2O3 layer, a SiO2 layer and an F-doped SiNx layer, and further obtaining a silicon material loaded with a three-layer passivation structure; all deposition temperatures in the low-temperature passivation method are less than or equal to 180 DEG C. The ultralow-temperature passivation process is provided for the back contact solar cell, the plasma-assisted ALD deposition process and the material doping modification method are innovatively combined, the temperature of the passivation process is reduced to 180 DEG C or below, and meanwhile the efficient passivation effect that iVoc is larger than or equal to 738 mV is achieved; and the problems of electrode warping, interface composite defects or unstable hydrogen passivation and the like caused by a high-temperature process are effectively solved.

The invention relates to a passivation layer film material for a photovoltaic cell and a preparation method of the passivation layer film material, and belongs to the technical field of photovoltaic cells. The passivation layer is a thin film of a SiNx-TiO2-SiOyNz sandwich laminated structure, SiNx hydrogen passivation and TiO2 field effect shielding are carried out, the interface state density is remarkably reduced, the service life of a device carrier is prolonged, the gradient oxygen-nitrogen ratio of SiOyNz is regulated and controlled, the fixed charge density is stabilized at the order of magnitude of 1010, the threshold voltage drift defect caused by the high fixed charge density of the traditional SiNx layer is weakened, and the performance of the device is improved. The laminated structure design inhibits the charge injection effect and enhances the dynamic stability, meanwhile, the atomic layer deposition process of a traditional Al2O3 layer is avoided, the passivation process complexity is reduced, the production equipment is simplified, the production efficiency is improved, and a new method is provided for industrial production of photovoltaic devices.

The application provides a surface passivation treatment method for optimizing a tunneling oxide passivation battery, which comprises the following steps: in a BOE cleaning step, placing an annealed silicon wafer into a mixed solution of a tank cleaning device, cleaning the silicon wafer in the mixed solution for more than 120s, taking out the silicon wafer and cleaning the silicon wafer with sufficient DIW, then placing the silicon wafer into an acid solution, taking out the silicon wafer and cleaning the silicon wafer with a large amount of DIW, and bubbling in the cleaning process, and finally passivating the surface of the silicon wafer by using an (NH4)2S solution; and in a reflection reduction film manufacturing step, the reflection reduction film is divided into three layers for preparation. The application utilizes sulfur passivation of the P-type emitter of the battery, assists accumulation of negative charges of aluminum oxide to enhance the field passivation effect, passivates the silicon surface dangling bond, releases the process window reduction caused by the accumulation of [H] source for hydrogen passivation in the preparation process of silicon nitride, and reduces the performance attenuation caused by the escape of [H] in the long-term use of the battery assembly.

The invention discloses a photovoltaic module preparation method and a photovoltaic module, and belongs to the field of photovoltaic technology, and the method comprises the steps: carrying out the series welding and typesetting of battery pieces, carrying out the series welding and typesetting of at least two battery pieces provided with substrates and passivation layers, and obtaining a battery string layer; ultraviolet light irradiation: irradiating the surface of the cell string layer by adopting ultraviolet light with preset cumulative irradiation dose and preset temperature so as to enable the passivation layer to release free hydrogen elements, and enabling the free hydrogen elements to react with dangling bonds in the substrate to form first chemical bonds; the preset cumulative irradiation amount of the ultraviolet light is 0.0001 kWh / m < 2 >-1 kWh / m < 2 > and comprises values at two ends; the preset temperature is 25-200 DEG C and comprises the values of the two ends, and obtaining the ultraviolet-irradiated battery string layer. According to the invention, the hydrogen passivation on the surface of the substrate can be improved, the fixed charge is enhanced, the interface state density is reduced, the open-circuit voltage and the fill factor can be improved, and finally the photoelectric conversion efficiency of the assembly can be improved.

Provided is a method for producing an epitaxial silicon wafer having a high hydrogen-based passivation effect. This method for producing an epitaxial silicon wafer (100) is characterized by comprising: a first step for irradiating the surface of a silicon wafer (10) with a beam containing cluster ions of SiHx (x is an integer of 1-3) ions (12A) and C2Hy (y is an integer of 2-5) ions (12B), and forming a modified layer (14) on the surface layer portion of the silicon wafer (10); and a second step in which a silicon epitaxial layer (16) is formed on the modified layer (14), the total dose of the silicon epitaxial layer (16) being 6.00 * 1013-1.00 * 1015 ions / cm2 inclusive, the dose of C2Hy ions (12B) exceeding 1.00 * 1014 ions / cm2 inclusive and 3.00 * 1014 ions / cm2 inclusive, and the ratio of the number of implanted Si atoms to the number of implanted C atoms [Si / C] being 0.3-1.6 inclusive.

This invention relates to an annealing apparatus and method for HIT (High-Intensity Interval) solar cells. The apparatus includes: a furnace body with an internal cavity capable of accommodating solar cells coated with silver paste; a light source connected to the furnace body for irradiating the silver-painted solar cells to anneal them; wherein the wavelength range of the light source is between 300-750 nm; and an exhaust system including an inlet, a supply outlet, and an outlet; the inlet is located within the furnace body and is connected to the supply outlet, which is located inside the furnace body; the outlet is located on the furnace body to exhaust gases from the furnace. This invention adds a 300-750 nm spectral light source to irradiate the top (or bottom) of the HIT cell, which helps to anneal H (high-intensity interval) cells present in the silicon and interface layer. + Convert to H 0 This achieves the effects of enhanced annealing and hydrogen passivation.

The present application relates to the technical field of solar cell technology and discloses a method for preparing a solar cell and a solar cell. The method for preparing a solar cell of the present application comprises: providing an initial sliced ​​cell having a cross section; performing an oxidation treatment on the cross section to form an oxide layer; forming a hydrogen-containing passivation layer on a surface of the oxide layer away from the cross section; performing a hydrogen passivation activation treatment on a surface of the hydrogen-containing passivation layer away from the oxide layer to release hydrogen ions in the hydrogen-containing passivation layer to the cross section, thereby forming a passivated sliced ​​cell. By performing an oxidation treatment on the cross section of the initial sliced ​​cell to form an oxide layer, dangling bonds on the cross section are saturated to improve the passivation effect; performing a hydrogen passivation activation treatment on a surface of the hydrogen-containing passivation layer away from the oxide layer to release hydrogen ions in the hydrogen-containing passivation layer to the cross section, thereby passivating the damaged area of ​​the cross section and repairing internal defects of the cross section, thereby improving the performance of the sliced ​​cell.

The invention relates to the technical field of photovoltaics, in particular to a hydrogen ion control method in a battery sintering process, which comprises the following steps of: judging target-state hydrogen ions required by a silicon substrate according to the type of a doping interface of the silicon substrate, and enabling a hydrogen-containing passivation film layer to at least load the target-state hydrogen ions; in the sintering process of the silicon substrate, applying a parallel magnetic field parallel to the silicon substrate and a vertical magnetic field vertical to the silicon substrate to the silicon substrate and the hydrogen-containing passivation film layer; the parallel magnetic field is used for controlling target-state hydrogen ions to move towards the silicon substrate; hydrogen ions with the polarity opposite to that of the target-state hydrogen ions are marked as non-target-state hydrogen ions; the vertical magnetic field is used for enabling non-target-state hydrogen ions to be far away from a grid line of the hydrogen-containing passivation film layer; through a parallel magnetic field, target-state hydrogen ions are directionally driven to a corresponding interface according to the doped interface difference of a silicon substrate, and defect passivation is strengthened; and non-target hydrogen is repelled by a vertical magnetic field, so that the non-target hydrogen is prevented from interfering metal grid line contact, and the battery efficiency and reliability are effectively improved.

The present application discloses a back contact solar cell and a photovoltaic module. In one example, a back contact solar cell includes a semiconductor substrate, a first doped semiconductor part, a second doped semiconductor part, a first dielectric passivation layer, and a second dielectric passivation layer. Each of the first dielectric passivation layer and the second dielectric passivation layer includes a first passivation sub-layer having a field passivation function. A conductivity type of the first doped semiconductor part is opposite to that of fixed charges of the first passivation sub-layer. Each of the first dielectric passivation layer and the second dielectric passivation layer further includes a second passivation sub-layer having a chemical passivation function. The first passivation sub-layer of the first dielectric passivation layer includes a hydrogen-containing passivation layer. A portion of the hydrogen-containing passivation layer has micro-structures.

The invention discloses a solar cell and a photovoltaic module, and belongs to the technical field of photovoltaics. A cutting surface is formed on at least one side surface of the battery piece, and the side surfaces of the battery piece except the cutting surface are non-cutting surfaces; the non-cutting surface is provided with a first passivation layer and a second passivation layer which are sequentially arranged in the direction away from the non-cutting surface, the second passivation layer is a hydrogen passivation layer, and the first passivation layer and the second passivation layer do not cover the cutting surface; the cutting surface is provided with a third passivation layer; the third passivation layer is plated around a non-cutting surface adjacent to the cutting surface and covers part of the second passivation layer; and the ratio of the winding plating length of the third passivation layer to the overall length of the non-cutting surface subjected to winding plating is 1 / 60-1 / 8 and comprises values at the two ends. The three-layer laminated passivation film layer structure is formed in the side edge winding plating area, and the laminated passivation film layer structure is beneficial to preventing hydrogen from overflowing, so that the passivation stability of the cutting surface is improved.

The invention discloses a passivation method of a back contact cell, the back contact cell and a photovoltaic module. The passivation method of the back contact battery comprises the steps that ultraviolet laser is adopted for conducting laser treatment on a P area and an N area on the back face of the back contact battery, the power density of the ultraviolet laser acting on the P area is higher than that of the ultraviolet laser acting on the N area, and / or the power density of the ultraviolet laser acting on the N area is lower than that of the P area. The processing time of the ultraviolet laser acting on the P region is longer than the processing time of the ultraviolet laser acting on the N region; and carrying out laser treatment on the back surface of the back contact battery by adopting visible laser. Therefore, the back surface of the back contact battery is subjected to zoning treatment by adopting ultraviolet laser, the hydrogen passivation effect of the N region and the P region can be improved, impurities and defects are reduced, the carrier recombination rate is reduced, and a defect structure caused by excessive hydrogen sources is not easy to generate; compared with ultraviolet laser, the penetration depth of the visible laser is deeper, hydrogen passivation treatment can be performed on the silicon substrate, and the passivation effect of the silicon substrate is improved.

The utility model relates to the technical field of solar cells, and discloses a hydrogen passivation composite film for a solar cell, the solar cell, an assembly of the solar cell and a power station. The hydrogen passivation composite film for the solar cell comprises a silicon wafer and a silicon nitride film arranged on the surface of the silicon wafer, a first TiOx layer is arranged on the surface of the silicon nitride film, and the molar ratio of titanium atoms to oxygen atoms in the first TiOx layer is 0.1-0.5; a selective second TiOx layer is also arranged in a local area of the surface of the first TiOx layer, and the molar ratio of titanium atoms to oxygen atoms in the second TiOx layer is 1.5-3. According to the hydrogen passivation composite film for the solar cell, the first TiOx layer and the selective second TiOx layer are sequentially arranged on the silicon nitride film, so that the problem that hydrogen in the silicon nitride film overflows outwards can be solved, the function of preventing the hydrogen from overflowing is achieved, and the chemical passivation effect of a silicon wafer of the solar cell is improved; the method has the advantages of simple process, low cost, good blocking effect on metal slurry, reduction of the thickness of the polycrystalline silicon layer, reduction of parasitic absorption, and improvement of the double-sided rate, the open-circuit voltage and the cell efficiency.

The application discloses a solar cell, a preparation method thereof and a solar cell module. The solar cell comprises a silicon substrate, a tunneling oxide layer arranged on at least one side surface of the silicon substrate, and a doped layer arranged on a side of the tunneling oxide layer away from the silicon substrate. The doped layer comprises a doped polysilicon layer and a doped amorphous silicon / microcrystalline silicon layer arranged at intervals in a first direction, and the doped polysilicon layer and the doped amorphous silicon / microcrystalline silicon layer on the same side of the silicon substrate have the same doping type. The tunneling oxide layer and the doped amorphous silicon / microcrystalline silicon layer are adopted in a non-metal region, high passivation effect can be achieved only by a subsequent hydrogen passivation process without a high-temperature annealing process, and optical parasitic absorption can be effectively reduced. Meanwhile, the doped film layer in a metal region is subjected to laser annealing to obtain a doped polysilicon layer, the activated concentration of a doped element is improved, and the contact resistivity is effectively reduced.

This invention provides a perovskite solar cell, its fabrication method, and a three-terminal tandem solar cell, specifically relating to the field of solar cell fabrication technology. The fabrication method for this perovskite solar cell involves first preparing a first transport layer on a silicon substrate. Using atomic layer deposition (ALD) technology, a perovskite thin film is formed on the surface of the first transport layer, followed by in-situ annealing to obtain a perovskite absorber layer. Then, a second transport layer, a buffer layer, and a transparent conductive layer are sequentially fabricated on the surface of the perovskite absorber layer to obtain the perovskite solar cell. ALD's self-limiting reaction is insensitive to silicon textured surfaces, overcoming the bottleneck of uneven film formation in traditional processes. This results in a perovskite layer with precise thickness, dense density without pinholes, and consistent grain orientation, significantly suppressing interface / bulk recombination and improving carrier lifetime. In-situ annealing avoids thermal damage and promotes hydrogen passivation of the silicon surface, synergistically improving Voc and FF.

The application discloses a hydrogen passivation method for a solar cell and application thereof, and belongs to the technical field of solar cells. The method comprises at least twice hydrogen passivation, at least once of which is carried out before printing after a back film and at least once of which is carried out after sintering before printing after the back film. Light injection hydrogen passivation is carried out before printing after the back film, hydrogen atoms in a silicon nitride passivation film are activated by temperature rising, then the valence state of the hydrogen atoms is controlled by light irradiation, so that the hydrogen atoms are combined with a P emitter and an N-type base and a recombination center (a defect) to form a non-recombination center, a preliminary passivation effect is achieved, then secondary hydrogen passivation is carried out by electric injection or light injection after printing and sintering, damage caused by a sintering high-temperature process to passivation effect of a cell piece can be repaired to the maximum extent, the adverse effect of a sintering procedure on hydrogen passivation is improved, the conversion efficiency of the cell piece is improved, and the light-induced degradation resistance is improved.

The invention relates to the technical field of solar cells, in particular to a solar cell, a preparation method thereof and a photovoltaic module. The solar cell comprises a silicon substrate, a doping layer, an oxygen-containing passivation layer, a hydrogen-containing passivation layer, an aluminum nitride layer and an antireflection layer. The silicon substrate has a light receiving surface. The doping layer, the oxygen-containing passivation layer, the hydrogen-containing passivation layer, the aluminum nitride layer and the antireflection layer are sequentially stacked on the light receiving surface in the direction away from the silicon substrate. According to the solar cell, the influence of ultraviolet rays on the chemical passivation effect can be reduced, the early degradation risk of the solar cell is further reduced, the conversion efficiency attenuation rate of the solar cell is slowed down, the service life of a photovoltaic module using the solar cell is prolonged, and the working efficiency of the photovoltaic module is improved.

The application provides a passivation method of a solar cell, a solar cell and a photovoltaic module, which can be widely applied to the technical field of solar cells. The passivation method of the solar cell comprises the following steps: performing light treatment and electric treatment on a silicon substrate to form a cell piece; depositing a preset material on the surface of the cell piece to form a hydrogen supplement layer; wherein the preset material is different from the film layer material on the surface of the cell piece; the preset material contains hydrogen; performing annealing treatment on the cell piece containing the hydrogen supplement layer to passivate defect areas in the hydrogen in the preset material; and etching the hydrogen supplement layer by using a preset chemical agent to obtain a cell piece after hydrogen passivation. Before testing the cell piece, the hydrogen supplement layer is arranged on the surface of the cell piece, and the defect areas of the cell piece are passivated by annealing, which is beneficial to preventing carrier recombination and improving cell conversion efficiency.

The embodiment of the invention provides a surface treatment method of an amorphous silicon film, a preparation method of a solar cell and the solar cell, and the surface treatment method of the amorphous silicon film comprises the steps: obtaining a silicon wafer, and sequentially depositing a tunneling oxide layer and a phosphorus-doped amorphous silicon film on the back surface of the silicon wafer; carrying out pre-crystallization on the amorphous silicon thin film by adopting continuous laser with the wavelength of 492 to 577nm; and carrying out annealing treatment on the pre-crystallized amorphous silicon thin film. According to the embodiment of the invention, the continuous laser in a specific wavelength range is adopted to process the amorphous silicon film, because the instantaneous heating rate is high, a part of the amorphous silicon film is crystallized in advance, and at the moment, a part of hydrogen is still remained in the film, the annealing process is further optimized to be matched with the previous laser treatment, so that auger recombination can be reduced, and the production efficiency is improved. And hydrogen in the film can be fully released to passivate the surface defects of the silicon wafer, so that the passivation effect is improved.

The invention provides a preparation method of a hydrogen-rich AlOx passive film and a BC battery piece, on a pretreated precursor, aluminum hydroxide-rich layers are deposited on two sides of a silicon wafer by adopting an ALD technology, in the deposition process, aluminum oxide precursor trimethylaluminum TMA and H2O are alternately and circularly introduced into a reaction cavity in a pulse form, and annealing is performed after the passive film is deposited; wherein the pulse time ratio of TMA to H2O is (1-4) / (6.5-10.5), and the pulse time is controlled to be 1-15 s. By adjusting the pulse time proportion of TMA and H2O, the H content in the reaction process is increased; meanwhile, the number of circulation turns of TMA and H2O is increased, the effective thickness of aluminum oxide is increased, the purging time, temperature and annealing time are adjusted, the problem of membrane explosion caused by high hydrogen content is solved, the chemical passivation and H passivation characteristics of the battery are improved, the passivation performance of the BC battery is promoted to be improved, and the efficiency of the battery is improved.

The invention provides a TOPCon cell and a preparation method thereof, and relates to the technical field of solar cells, and the TOPCon cell comprises a silicon substrate; and a back intrinsic amorphous silicon layer and a P-type amorphous silicon layer are sequentially laminated on the back of the silicon substrate. A back intrinsic amorphous silicon layer (a-Si: H (I)) and a P-type amorphous silicon layer (a-Si: H (p)) are used as a back passivation structure, and the method has the following advantages that (1) passivation is realized by adopting an amorphous silicon (a-Si) film, the interface defect state density of the amorphous silicon layer is effectively reduced through hydrogen passivation, and the surface recombination rate is obviously lower than that of an existing tunneling oxide layer and polycrystalline silicon composite structure; and (2) the wide band gap characteristic (about 1.7-1.8 eV) of the amorphous silicon can more effectively inhibit carrier recombination.

The invention discloses a method for improving a TOPCon battery by optimizing an antireflection passivation film. The method comprises the following steps: cleaning an original silicon wafer and texturing; boron expansion and knot pushing; removing BSG and polishing the back surface; depositing a tunnel oxide layer and an intrinsic polycrystalline silicon layer; phosphorus diffusion doping; pSG is removed, and a protective layer is plated on the front side and oxidized on the back side; depositing an AlOx layer on the front side; depositing an anti-reflection silicon nitride film on the front side; depositing a silicon nitride film on the back; carrying out metallization; wherein in the process of depositing the antireflection silicon nitride thin film on the front side, plasma oxidation treatment is carried out on the AlOx layer before silicon nitride deposition; in the process of depositing the silicon nitride film on the back surface, a multi-step silicon nitride deposition process is adopted, and plasma hydrotreatment is carried out before each step of silicon nitride deposition. Through the synergistic effect of front oxygen vacancy repair and back hydrogen passivation enhancement, the passivation effect of the TOPCon battery is integrally improved. The method can be realized by adding a plasma treatment step without modifying the existing equipment.

The invention relates to the technical field of metal materials, and discloses a deep-sea high-pressure-resistant hydrogen embrittlement-resistant titanium alloy pipe and a manufacturing method thereof.The deep-sea high-pressure-resistant hydrogen embrittlement-resistant titanium alloy pipe comprises a titanium alloy, and the chemical composition of the deep-sea high-pressure-resistant hydrogen embrittlement-resistant titanium alloy pipe comprises, by weight, 5.0-6.0 parts of aluminum, 2.5-3.5 parts of vanadium, 0.7-1.3 parts of molybdenum, 0.5-1.1 parts of niobium, 0.2-0.4 part of gadolinium, 0.05-0.15 part of tin and the balance titanium and inevitable impurities. The manufacturing method comprises the steps of smelting and ingot manufacturing, blank forging, ultrasonic-assisted multi-stage solid-phase rotary extrusion forming and stress relief annealing. Molybdenum, niobium and gadolinium elements are added into the titanium alloy, an ultrasonic-assisted multi-stage solid-phase rotary extrusion process is combined, a composite oxide film for inhibiting hydrogen permeation is formed on the surface of the alloy, and meanwhile, a nanoscale intermetallic compound capable of reversibly absorbing and desorbing hydrogen is formed in a matrix through in-situ induction to serve as a hydrogen capture trap. The titanium alloy pipe prepared by the method has a superfine grain structure, and the coordination of double hydrogen embrittlement-resistant mechanisms of internal hydrogen buffering and surface hydrogen passivation is realized.