Method for dipositing high-dielectric constant material on chip using atomic layer diposition method

Abstract

Methods of forming hafnium oxide, zirconium oxide and nanolaminates of hafnium oxide and zirconium oxide are provided. These methods utilize atomic layer deposition techniques incorporating nitrate-based precursors, such as hafnium nitrate and zirconium nitrate. The use of these nitrate based precursors is well suited to forming high dielectric constant materials on hydrogen passivated silicon surfaces.

Description

Background of the invention [0001] The present invention relates to a method of manufacturing an integrated circuit (IC), in particular to a method of forming a high dielectric constant (k) material on silicon. [0002] Current Si VLSI technology uses silicon dioxide as the gate dielectric in MOS devices. As device dimensions continue to be miniaturized, the thickness of the silicon dioxide layer must also be reduced to maintain the same capacitance between the gate region and the channel region. Thicknesses of less than 2 nanometers (nm) are expected in the future. However, the large tunneling currents that occur through such a thin silicon dioxide layer necessitate consideration of other materials. Materials with high dielectric constants can make the gate dielectric layer thinner, thereby alleviating the problem of tunneling current. These so-called high-k dielectric films are defined herein as having a large dielectric constant relative to silicon dioxide. Silicon diox...

AI Technical Summary

Problems solved by technology

One problem with using high-k materials is the formation of interfacial silica or silicate layers with lower dielectric constants during standard processing

Large ligands also take up enough space, and steric hindrance prevents uniform monolayer deposition

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