Processing method of gap filling and manufacturing method of shallow trench isolation groove

Abstract

The invention discloses a processing method of gap filling, which is used for forming a thin film on a semiconductor substrate with a gap and completely filling the gap. The processing method comprises the following steps: using a method of high-density plasma chemical vapor deposition (PCVD) to fill the gap; using nitrogen trifluoride to etch the overhang deposited in the corner of the gap; afterintroducing hydrogen gas for hydrogen passivating treatment, introducing oxygen gas to react with the residual hydrogen gas after hydrogen passivating treatment, and discharging all the gases in thereaction chamber; and then, returning to carry out the gap filling operation until the filling of the gap is completed. The embodiment of the processing method of gap filling can remove the residual hydrogen gas in the reaction chamber by introducing the oxygen gas after the hydrogen passivating treatment so as to prevent the hydrogen gas from being introduced into the generated thin film, avoid various kinds of performance reduction caused by the generation of H2 and improve the performance of the thin film. The invention also discloses a manufacturing method of a shallow trench isolation groove, which can improve the performance of an isolation groove thin film.

Description

technical field [0001] The invention relates to integrated circuit manufacturing technology, in particular to a gap filling processing method and a shallow trench isolation groove manufacturing method. Background technique [0002] At present, integrated circuit technology has entered the era of ultra-large-scale integrated circuits. As the process size of integrated circuits develops to 65 nanometers or even finer structures, the aspect ratio (that is, the ratio of the depth of the gap to the width of the gap) in some devices has reached 4:1 or even higher. In this case, higher technological requirements are put forward for the filling of various gaps, especially the filling of gaps with high aspect ratios. [0003] Chemical vapor deposition (Chemical Vapor Deposition, CVD) is able to deposit a film (Film) on a semiconductor substrate by means of a chemical gas reaction, thus filling the gap (usually referred to as gap filling, or gap-fill) It has been widely used in the ...

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Problems solved by technology

[0013] The above hydrogen passivation method can effectively remove F element, but the H2 used to remove F element will still have after the reaction Part remains in the chamber and enters the generated STI film in the subsequent gap-fill operation

h 2 After entering the STI film, many performance parameters of the film will be reduced: for example, the density of the STI film will decrease, the uniformity will deteriorate, and the etching rate will increase, which will affect the etching effect. At the same time, the thermal stability of the STI film will also decrease; In addition, the H in STI films 2 There is also a possibility of migration to Si-SiO 2 The interface of the interface causes it to appear interface states (Interface States)

[0014]It can be seen that although the STI film after the hydrogen passivation process has eliminated the influence of the F element, the H2 still degrades the performance of the film

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