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Preparation method of passivated emitter and rear side cell (PERC) and passivated emitter and rear total diffused (PERT) solar cells

A technology for solar cells and silicon wafers, applied in circuits, photovoltaic power generation, electrical components, etc., to achieve the effects of easy implementation, improved hydrogen passivation, and simple and easy methods

Inactive Publication Date: 2015-11-25
北京飞行博达电子有限公司
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Problems solved by technology

[0009] However, the PECVD process and the sintering process do not maximize the hydrogen passivation effect of the SiNx film. Therefore, those skilled in the art need to provide a preparation method for PERC and PERT solar cells to further improve the hydrogen passivation of the silicon nitride film. Passivation to improve the conversion efficiency of solar cells

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  • Preparation method of passivated emitter and rear side cell (PERC) and passivated emitter and rear total diffused (PERT) solar cells
  • Preparation method of passivated emitter and rear side cell (PERC) and passivated emitter and rear total diffused (PERT) solar cells

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Embodiment Construction

[0039] In order to make the purpose, technical solution and advantages of the present invention clearer, the following will further describe the implementation of the present invention in detail in conjunction with the accompanying drawings. Those skilled in the art can easily understand other advantages and effects of the present invention from the contents disclosed in this specification. The present invention can also be implemented or applied through other different specific embodiments, and various modifications or changes can be made to the details in this specification based on different viewpoints and applications without departing from the spirit of the present invention.

[0040] The above and other technical features and beneficial effects will be combined with the embodiments and the accompanying Figures 1 to 2 The preparation method of the PERC and PERT solar cells of the present invention will be described in detail. figure 1 It is a schematic flow chart of the...

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Abstract

The invention discloses a preparation method of passivated emitter and rear side cell (PERC) and passivated emitter and rear total diffused (PERT) solar cells, and belongs to the technical field of silicon solar cells. A heat treatment technology is added on the basis of an existing technology, so that the hydrogen passivation effect of a silicon nitride film is further improved; carrier recombination is lowered; the electrical properties of the solar cells are improved; the open-circuit voltage of the cells is improved by 10-15mV; and the efficiency of the cells is improved by 0.3%-0.5%. In addition, sintering furnace equipment on an existing enterprise production line is fully utilized by a fast heat treatment technology; the equipment investment is fully reduced; the manufacturing cost of the cells is not increased; and the method disclosed by the invention is simple and feasible, easy to realize, relatively low in cost, and suitable for popularization and application.

Description

technical field [0001] The invention belongs to the technical field of silicon solar cells, and relates to a preparation method of PERC and PERT solar cells. Background technique [0002] Conventional fossil fuels are being exhausted day by day. Among the existing sustainable energy sources, solar energy is undoubtedly the cleanest, most common and most potential alternative energy source. Solar power generation devices, also known as solar cells or photovoltaic cells, can directly convert solar energy into electrical energy. The principle of power generation is based on the photovoltaic effect of semiconductor PN junctions. High-efficiency solar cells are an important direction for the development of solar cells. For example, P-type substrate PERC (passivated emitter and rear side cell) cells and N-type substrate PERT (passivated emitter and rear total diffused) cells are current research hotspots. [0003] The preparation method of PERC cell comprises the following steps:...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/0216
CPCH01L31/02167Y02E10/50
Inventor 张勤杰傅建奇满建秋于满
Owner 北京飞行博达电子有限公司
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