Heterojunction battery layered hydrogen passivation method, hydrogen passivation device, battery, battery module and solar power station

Abstract

The invention discloses a heterojunction battery layered hydrogen passivation method, a hydrogen passivation device, a battery, a battery module and a solar power station. According to the hydrogen passivation method, at least one time of hydrogen passivation treatment is carried out on the semi-finished product of the heterojunction battery during the heterojunction battery preparation process, and in the case of hydrogen passivation treatment, the semi-finished product of the heterojunction battery is heated and irradiated by a light source. The heterojunction battery layered hydrogen passivation method adopts the hydrogen passivation process during the heterojunction battery preparation process, high-concentration hydrogen atoms can be diffused to the interface of a silicon crystal, a silicon dangling bond on the interface can be better passivated, and the surface recombination rate of the silicon crystal is significantly reduced.

Description

technical field [0001] The invention relates to the technical field of battery sheet manufacturing, in particular to a layered hydrogen passivation method for a heterojunction battery, a hydrogen passivation device, a battery, a battery assembly and a solar power supply station. Background technique [0002] Heterojunction solar cells have attracted the attention of researchers at home and abroad because of their characteristics such as low process temperature, high conversion efficiency, good cell stability and low temperature coefficient. In general, there are a large number of interface state defects on the surface of silicon wafers, which are mainly caused by a large number of dangling bond defects on the surface of silicon wafers, which are effective photogenerated carrier recombination centers. Both experimental and theoretical results show that when the interface state defect density is too large, the open-circuit voltage, fill factor, and conversion efficiency of the...

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Problems solved by technology

However, for various impurities, crystal defects, or interface state defects on the surface of silicon wafers in conventional crystalline silicon cells, TopCon cells, rear passivation cells, or heterojunction cells, the hydrogen source for passivation is mostly the one that has been plated on the silicon cell. Thin film layers or optional stacks of dielectric materials and semiconductor materials such as hydrogen-containing silicon nitride (SiN x :H), silicon oxynitride (SiO x N y :H), alumina (AlO x :H), silicon oxide (SiO x :H), aluminum oxynitride (AlO x N y :H), amorphous silicon (a-Si:H), nano-silicon (nc-Si:H), microcrystalline silicon (μc-Si:H), polycrystalline silicon (poly-Si:H), or silicon carbide (μc -SiC:H), etc., after the completion of the entire battery production, the hydrogen atoms are diffused through other regions of the device through a high-temperature or long-term passivation process. This passivation process can only be applied on the surface or near the surface of the silicon crystal (usually less than a few microns) to introduce hydrogen, and it is impossible to introduce high concentration of hydrogen atoms in the matrix and the required area of ​​the interface, so the passivation effect of hydrogen atoms on the impurities and defects inside the solar cell matrix and the interface is very limited

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