Method for preparing two-sided silicon nano-wire array

Abstract

The invention relates to a silicon nano-wire, in particular to a method for preparing a two-sided silicon nano-wire array. According to the method, a silicon surface is etched by combining the corrosivity of a solution and the catalysis of metal ions at low temperature to form the silicon nano-wire array. The method comprises the following steps of: cleaning the silicon surface; passivating the surface of a silicon wafer by using hydrogen; covering a uniform layer of silver nanoparticle network on each of two surfaces of the silicon wafer by using a chemical plating method; preparing the two-sided silicon nano-wire array; and removing excessive silver nanoparticles. The method has the advantages that: expensive equipment and high-temperature environment are avoided in the preparation process, and the method is easy to operate and control, low in cost and high in efficiency, and can be applied to large-scale industrial production.

Description

technical field [0001] The invention relates to silicon nanowires, in particular to a method for preparing a double-sided silicon nanowire array. Background technique [0002] Silicon nanowires have many novel physical properties that are significantly different from other low-dimensional semiconductor materials, such as electricity, optics, magnetism, and mechanics, which make them ideal for field-effect devices, single-electron storage devices, photodetection devices, nanosensors, and high-efficiency light-emitting devices. It has potential applications in solar cells, especially in improving solar cell light absorption, spectral response, effective electron-hole separation and anti-reflection, etc., so the research of one-dimensional silicon nanowires has received great attention; The preparation methods of nanowire arrays include Bottom-Up method and Top-Down method, wherein the Bottom-Up method is mainly based on Fe, Au, Ni, Ti, SiO x etc. as catalysts or directly usi...

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Problems solved by technology

The Bottom-Up method and the dry etching bulk silicon surface method usually need to be prepared under high temperature conditions using relatively sophisticated and expensive equipment. These factors lead to a significant increase in the preparation cost of silicon nanowire arrays, and at the same time, the preparation efficiency is also low. It is not too high, so it is difficult to achieve a wide range of industrial applications; this paper proposes a method of wet etching silicon surface to prepare silicon nanowire arrays, the schematic diagram of which is shown in Figure 1 shows that this method is prepared at a lower temperature by using the corrosiveness of the solution, and has the advantages of simple operation and no equipment The advantages of demand and easy control

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