53 results about "Surface capping" patented technology

A lubricant composition is disclosed that comprises: (a) a lubricant and (b) at least one molybdenum-containing compound in the form of surface-capped nanosized particles of the general formula: (Z)n(X—R)m wherein Z is an inorganic moiety comprising molybdenum and sulfur in the form of particles having dimensions in the range of from about 1 to about 100 nm; (X—R) is a surface-capping reagent wherein R is a C4 to C20 straight or branched-chain alkyl or alkylated cycloalkyl radical or radicals and X is a functional group capable of specific sorption and / or chemical interaction with molybdenum / sulfur moiety; n is the number of molecules of Z in the particles; m is an integer representing the amount of surface-capping reagents relative to a single particle; and the ratio of m to n is in the range of from about 1:1 to about 10:1.

The invention provides a shell, method for manufacturing the shell and mould for manufacturing the shell. The shell comprises a film, a base body and a display window. The film is covered on the surface of base body and the display window, which are made of different materials, disposed in one plane and connects with each other.The integral molding process of film, base body and display window for the shell is as follows: placing film in cavity of mould, molding the base body and the display window which are separately binding with the film, pressing display window in mould by compression mechanism of mould, then shell is obtained and taken out. The invention can accomplish seamless bond for base body and display window, stable binding quality, and high production efficiency; shell quality is promoted by covering film on base body and display window to smooth shell and compressing in mold for obtaining smooth display window.

The invention relates to a silicon nano-wire, in particular to a method for preparing a two-sided silicon nano-wire array. According to the method, a silicon surface is etched by combining the corrosivity of a solution and the catalysis of metal ions at low temperature to form the silicon nano-wire array. The method comprises the following steps of: cleaning the silicon surface; passivating the surface of a silicon wafer by using hydrogen; covering a uniform layer of silver nanoparticle network on each of two surfaces of the silicon wafer by using a chemical plating method; preparing the two-sided silicon nano-wire array; and removing excessive silver nanoparticles. The method has the advantages that: expensive equipment and high-temperature environment are avoided in the preparation process, and the method is easy to operate and control, low in cost and high in efficiency, and can be applied to large-scale industrial production.

The invention provides a method for reducing the diameter of a self-crimping micron tube by virtue of metal nanoparticles. The method comprises the following steps: depositing a buffer layer on a substrate or a virtual substrate; depositing a sacrificial layer on the buffer layer; depositing a strain thin film on the sacrificial layer; carrying out primary photoetching and corrosion, wherein the strain thin film forms a table-board, so that the sacrificial layer is exposed; carrying out secondary photoetching and forming a pattern window by using photoresist; depositing a metal thin film, and annealing at a high temperature, wherein the metal thin film forms the metal nanoparticles; and laterally corroding the sacrificial layer, wherein the strain thin film covering the metal nanoparticles on the surface is self-crimped to form the tube. On the premise of not changing the thickness of the thin film and strain, the diameter of the self-crimping micron tube can be remarkably reduced just by virtue of the metal nanoparticles and the self-crimping micron tube with the diameter which is near to 1 micron can be easily prepared, and even the nanotube with the diameter which is lower to several hundred nanometers and a regular array can be easily prepared. Meanwhile, the method can ensure that the micron tube or the nanotube has excellent mechanical and structural characteristics.

The present invention provides a member coated with thermal barrier coating film having a metal substrate, the surface of which is covered with an adhesive layer (bond coat layer) composed of a heat resisting alloy and a thermal barrier film layer (thermal barrier coating layer) composed of a heat resisting ceramic formed on the adhesive layer, and a thermal spraying powder used for the formation of the adhesive layer, characterized in that the adhesive layer is a MCrAlX alloy (wherein M is at least one metal selected from among Fe, Ni and Co, and X is at least one metal selected from among Y, Hf, Ta, Cs, Pt Zr, La and Th), and an element capable of inhibiting the growth of an oxide layer (TGO) which is grown between the adhesive layer and the thermal barrier film layer by the exposure to a high temperature is added to the adhesive layer.

We have discovered a method of improving step coverage of a copper seed layer deposited over a semiconductor feature surface which is particularly useful for small size features having a high aspect ratio. Using a contact via as an example of a high aspect ratio feature, we have demonstrated that despite previously-held views, it is possible to increase the copper seed layer coverage simultaneously at the bottom of the via and on the wall of the via by increasing the percentage of the depositing copper species which are ions. The percentage of species ionization which is necessary to obtain sufficient step coverage for the copper seed layer is a function of the aspect ratio of the feature. For features having a 0.25 mum or smaller feature size, an aspect ratio of about 3:1 requires that about 50% or more of the copper species be ions at the time of deposition on the substrate. As the aspect ratio increases to about 4:1, the percentage of species which are ions is preferably increased to between about 60% and 70%. When the aspect ratio is about 5:1 or greater, the percentage of species which are ions is preferably increased to greater than 80%. This increase in the percentage of copper species which are ionized can be achieved using techniques known in the art, such as, for example, laser ablation of the copper target, electron cyclotron resonance, hollow cathode, and applicants' preferred technique, an inductively coupled RF ion metal plasma. We have further discovered that when an inductively coupled plasma is used to increase ionization, an increase in power to the ionization source is not enough to obtain the desired percentage of ions in many cases. It is also necessary to increase the plasma gas pressure. Typically the plasma gas is argon, and the argon pressure in the copper seed layer deposition chamber is increased to fall within the range of about 20 to about 100 mT, preferably between about 30 mT and 70 mT.

A method for fabricating a semiconductor device structure includes applying a stress buffer material onto a semiconductor device structure and spreading the stress buffer material. When the stress buffer material is spread, it substantially fills recesses formed in a surface of the semiconductor device structure and imparts the stress buffer material with a substantially planar surface. The thickness of the stress buffer material covering the surface of the semiconductor device structure may be less than the depths of the recesses. The surface may remain substantially uncovered by the material.

The present invention is directed to a non-contact, single-component developing system for electrophotographic machines that effectively reduces the impact of adhesion forces on the development process. The developing system of the present invention utilizes a single-component toner that tends to reduce the adhesion forces that hold the toner particles on a toner support member. Preferably, the toner is combined with large and small silica particles having a concentration by weight that results in an optimum surface coverage of toner particles by large and small silica particles that facilitates a reduction in the adhesion forces holding the toner particles on the toner support member.

The invention discloses a metal net and a manufacturing method thereof. The manufacturing method of the metal net comprises the steps that a substrate is provided; a metal base material is formed on the surface of the substrate; the metal base material is covered with a photoresist layer, and the photoresist layer forms a net-shaped pattern through an exposure and development process; an etching process is carried out so as to remove the part, not covered with the photoresist layer, of the metal base material; the photoresist layer is removed; a metal layer is formed to coat the metal base material; and the metal base material is stripped from the substrate so as to form the metal net. Therefore, the metal net with overall thickness being smaller is formed. Besides, the metal layer is formed after the photoresist layer is removed so as to coat the metal base material, and the hole sizes on the formed metal net can be controlled by controlling the forming thickness of the metal layer. Furthermore, the yield can be improved through the manner of manufacturing metal nets of the same specification or different specifications on the two sides of the substrate correspondingly.

A surface cover having a polarized adhesive material bonded or operably connected to at least a portion of a substrate. The polarized adhesive material may be a hot melt adhesive material. The substrate may have little or no electret capabilities. The electrostatic charge of the polarized adhesive material may allow the surface cover to be removed from a mounting surface for positional adjustment during the application of the surface cover to the mounting surface. Once at its desired location, and / or aligned with the patterns, characters, or images on an adjacent surface cover, the polarized adhesive material may be activated. The adhesive force provided by the activated polarized adhesive material may provide a sufficient force for adhering surface cover along the mounting surface, thereby making the dissipation or loss of electrostatic charge inconsequential to the ability of the surface cover to remain at its desired position along the mounting surface.

The invention relates to a transverse earth borrowing method applied to a roadbed by a Luoyang shovel, belonging to the technical field of roadway maintenance. The method solves the problems of existing earth borrowing devices and methods applied to the roadbed that the social work function and service life of the road are affected, personal security of workers is hard to ensure, and the earth borrowing efficiency is low. The method specifically comprises the following steps: ensuring that the roadbed at an earth borrowing opening is 1m higher than the highest earth borrowing opening; cleaning weed and surface capping mass away from a side slope by a shovel, and the distributing points; digging a platform at each earth borrowing opening, pouring a cement concrete horizontal table which is 50cm long, 15cm wide and 5cm high outside each earth borrowing opening, measuring by adopting a leveling instrument, and burying a snap joint at each of the front and rear ends of the horizontal table; preserving the poured concrete horizontal table for at least 7 days; starting borrowing earth when the Luoyang shovel reaches a specified earth borrowing opening; and filling earth blocks in a prepared aluminum box from at the middle part of the head of the Luoyang shovel and finally sealing the aluminum box. The method provided by the invention is used for transversely borrowing earth for the roadbed.

A clamp (51) for connecting panels in a surface coating structure on a base frame comprises a fixable element (100) and a rotatable element (200) having an upper part (220), projecting after its rotation from the fixable element (100) and provided with end (21, 22) of engagement in lateral grooves of adjacent panels. The rotatable element (200) has an intermediate part (280) and a lower part (290)which are constituted by two coaxial discs, the disc of the intermediate part (280) having a smaller diameter than the disc of the lower part (290). The fixable element (100) has two communicating coaxial holes (10, 11) housing the intermediate part (280) and the lower part (290) with a wide coupling to allow rotation of the rotatable element (200) with respect to the fixable element (100). A manufacturing process of the clamp (51) is also described.

The invention discloses a method for reducing surface ice adhesion strength of a silicon wafer, which comprises the following steps of: S10, preparing micropores with the height of 1.1 microns on thesurface of a silicon material, S20, covering the surface of the silicon material with the micropores with a PDMS film, and cleaning the surface of the silicon material with the micropores by using oxygen plasma before the PDMS film is adhered to the surface of the silicon material with the micropores, and S30, curing the PDMS film on the surface of the silicon material. The method S10 for preparing the micropores in the surface of the silicon material comprises the following substeps of: S101, spin-coating photoresist on the surface of the silicon material, S102, exposing the photoresist in amicropore region to be prepared, and S103, etching the exposure area.