42 results about "Surface capping" patented technology

The invention provides a method for automatically detecting the coverage rate of a blade part after shot blasting, which realizes objective evaluation and screening of the surface coverage rate of the part based on an intelligent platform, and comprises the following steps: S1, establishing a database for comparison through sample coverage rate calibration; s2, performing shot blasting treatment on the part to form a to-be-detected surface; s3, the part subjected to shot blasting treatment is fixedly arranged in a designated area and transferred to a detection platform; s4, carrying out image acquisition on the shot blasting area of the part by adopting intelligent visual equipment; s5, comparing the acquired image with a calibration picture in a database through image analysis software, and judging a coverage rate value of the part; and S6, re-checking and post-processing the judgment result, and screening out qualified parts. According to the method, the roughness of parts such as blades after shot blasting can be quantitatively detected, and the coverage condition of the parts after surface treatment can be more objectively judged; the detection efficiency can be improved, and the problem of missing detection can be effectively avoided.

Disclosed in the present invention are a micro-lens preparation method and a micro-lens structure. The micro-lens preparation method comprises: S1, forming, in a first region of a surface of a base material, a first photoresist layer having a specified pattern structure; S2, forming a protective layer on the surface of the base material, and superimposing the protective layer on the first photoresist layer to form a protection structure; S3, forming a metal layer in a third region of the surface of the base material, wherein a second region is in an exposed state, the second region surrounds the first region, and the third region surrounds the second region; and S4, synchronously etching the base material covered with the protection structure and the metal layer on the surface until the specified pattern structure is formed in the first region of the surface of the base material and a recess-shaped structure is formed in the second region. In the present invention, by means of first preparing a photoresist spherical structure on the base material, and then preparing a step structure for supporting a micro-lens, the situation in an existing process of non-uniform photoresist coating caused by first preparing a step structure and then preparing a photoresist spherical lens is avoided, thereby improving the uniformity of a prepared micro-lens and the yield of a product.

The invention provides a preparation method and application of a surface pyramid multistage ordered piezoresistive sensor, and the method comprises the steps: firstly obtaining a Si substrate of which the surface is covered with a SiO2 film, and the crystal orientation of the Si substrate is lt; 100 gt; ; the surface of the SiO2 thin film is covered with a photoresist layer, a plurality of groups of dots are exposed on the photoresist layer, and each group is composed of three rows of dots which are arranged in parallel; after developing by using a developing solution, carrying out plasma etching on the exposed SiO2 so as to expose the Si substrate; removing the photoresist, and performing wet etching on the exposed Si by using a NaOH solution to obtain a silicon template; pouring a conductive material on the silicon template, heating and curing the conductive material, and stripping the conductive material from the silicon template to obtain the sensing layer of the surface pyramid multistage ordered piezoresistive sensor, the dependence of the sensor on the electrode contact area and compressibility is improved, and the sensitivity and the sensing range are improved.

The invention discloses metallization of low-melting-point slurry based on a groove capping plate structure, and relates to the field of solar photovoltaic cell manufacturing. According to the metallization method of the low-melting-point slurry based on the groove capping plate structure, firstly, an insulating material is used on the surface of a battery silicon wafer, a groove structure with a preset pattern is formed through silk-screen printing, and then after a groove is solidified, the bottom and the side wall of the groove are covered with low-melting-point alloy slurry. And covering the surface of the low-melting-point slurry with a layer of insulating material, pre-curing, completely coating the slurry, providing physical constraint, and finally carrying out heating curing treatment, so that the low-melting-point slurry forms a continuous dense conductive layer. According to the method, through groove physical confinement and cover plate coating, melting flow of the low-melting-point slurry is restrained, electrode continuity and conductive uniformity are ensured, the problems of oxidation and agglomeration are solved, the low-cost low-melting-point slurry is used for replacing precious metal slurry, the cost of an electrode material is remarkably reduced, and therefore the manufacturing cost of a photovoltaic cell is further reduced.

To provide pellets for various fields such as pharmaceuticals, foods, and electronic components at low cost with stable quality.SOLUTION: In a pellet such as a tablet, a tab, or a chip including a core composed of a powder-molded body and a coating film covering the surface of the core, the coating film contains an aggregate that is a self-assembled body of noble metal nanoparticles made of gold, silver, or platinum-group metals having an average diameter of 100 nm or less, and a Raman-active chemical substance such as adenine that exhibits SERS, and is characterized in that the manufacturing process is controlled by measuring the Raman scattering intensity of the chemical substance.SELECTED DRAWING: Figure 4

The invention discloses a preparation method of a mask plate for evaporation of a high-resolution OLED (Organic Light Emitting Diode). The preparation method comprises the following steps: S1) covering one side surface of a glass substrate with a metal layer; (S2) a light resistor is formed on the side, away from the substrate layer, of the metal layer, a plurality of first through holes are formed in the light resistor, and the first through holes correspond to a to-be-evaporated area on the display substrate; s3) etching a region, which is not covered by the photoresist, on the metal layer, and forming a second through hole communicated with the first through hole on the metal layer; s4) removing the light resistance; and S5) performing plasma etching on the area, which is not covered by the metal layer, on the glass substrate, and forming a third through hole communicated with the second through hole in the glass substrate. The mask plate is formed through cooperation of the glass substrate and the metal layer, the evaporation pattern is defined through the metal layer (provided with the second through holes), and the high-resolution effect of the display substrate can be achieved when the mask plate is used in cooperation with the high-density third through holes formed in the glass substrate.

A device includes a substrate comprising a first standoff, a second standoff, a third standoff, a first cavity, a second cavity, and a bonding material covering a portion of the first, the second, and the third standoff. The first cavity is positioned between the first and the second standoffs, and the second cavity is positioned between the second and the third standoffs. The first cavity comprises a first cavity region and a second cavity region separated by a portion of the substrate extruding thereto, and wherein a depth associated with the first cavity region is greater than a depth associated with the second cavity. A surface of the first cavity is covered with a getter material.

The invention relates to a component (1) having an outer surface (1a) covered with a coating (2) comprising at least: a) a first layer (3), and a first layer deposited on the outer surface (1a) of the component (1) and comprising at least two sub-layers (3a, 3b): i) a first sub-layer (3a) made of a material comprising at least one element selected from the group consisting of chromium, nickel, cobalt, phosphorus, nitrogen, niobium, alloys thereof and mixtures thereof; ii) a second sub-layer (3b) deposited on the first sub-layer (3a) and made of a material comprising at least two elements selected from the group consisting of chromium, nickel, tungsten, cobalt, carbon, nitrogen, alloys thereof and mixtures thereof; iii) a third sub-layer (3c) deposited on the second sub-layer (3b) and made of a material comprising at least one element selected from the group consisting of chromium, nickel, titanium, silicon, cobalt, phosphorus, nitrogen, alloys thereof and mixtures thereof, and b) a second layer (4) deposited on the first layer (3), the second layer being an amorphous carbon layer.

An object of the present disclosure is to provide a film that has high water slidability, and a substrate having a surface covered with the film. The present disclosure provides a film having the properties of a sliding velocity of 150 mm / s or more at an inclination angle of 30° and an average surface roughness (Ra) of 1 μm or less, and further provides a substrate having a surface covered with the film.

The invention relates to the technical field of machine tool table tops, and discloses a preparation method for an aviation-grade clean workshop machine tool table top, which comprises the following steps: in a clean environment with a clean grade not lower than ISO5 grade, placing a polyurethane (PU) substrate on the machine tool table top; the surface of the PU substrate is subjected to through hole and precision treatment according to a preset array through a machining assembly in the machining and monitoring arm; the surface of a polyurethane (PU) substrate is covered with a composite functional coating, and the composite functional coating is subjected to thermocuring. According to the method, operation is conducted in the high-cleanliness environment with the whole process not lower than the ISO 5 level, and key links such as base plate pretreatment, profiling supporting system assembling, composite function coating coating and curing and in-situ precise grinding and polishing are strictly controlled, so that the extremely low particle release characteristic of the machine tool table top is fundamentally ensured; according to the method, the risk that the table top becomes a pollution source due to friction, abrasion or material volatilization in the precise machining or assembling process is effectively avoided.

The invention relates to a method for cleaning a component (1) made up of several components (12, 13), wherein the components (12, 13) of the component (1) have cavities (19), wherein the entire component (1) is first provided with a coating that covers the surfaces (4, 7, 16) to be protected, then the cavity (19) is cleaned by a pickling agent, then the cavity (19) is filled with a coating material that is activated by the application of heat and leads to a coating of the surface inside the cavity (19) and simultaneously leads to at least partial evaporation or removal of the coating from the masked surfaces (4, 7, 16).

This invention discloses a method for determining the thickness of electrochemically deposited gold, silver, and palladium noble metal capping layers, comprising the following steps: 1) preparing standard samples by electrochemically depositing nickel of different thicknesses onto a pure copper substrate, followed by gold, silver, and palladium plating; 2) testing the capping layer thickness of the standard samples using scanning electron microscopy (SEM) backscattered electron imaging technology; 3) testing the intensity of X-ray characteristic spectral lines of different capping layer thicknesses using SEM energy dispersive spectroscopy (EDS) technology, and determining optimized test conditions; constructing a surface capping layer thickness calibration curve based on SEM EDS technology; 4) detecting the electrochemically deposited capping layer thickness of different types of samples. This method can accurately determine the thickness of bonding lines or thin films of noble metal capping layers prepared by electrochemical deposition processes in the integrated circuit field, filling the technical gap of rapid measurement for such products. The detection process is convenient and fast, and the detection results are accurate and consistent.

A substrate processing method of the invention includes accommodating a substrate having an upper surface covered with a liquid film and being placed on a support member having a flat plate-like shape in a horizontal position, into an internal space of a processing chamber, filling the internal space with the processing fluid in a supercritical state, and discharging the processing fluid from the internal space. A first ejection port ejects the processing fluid in a horizontal direction toward a space between a bottom surface among wall surfaces of the processing chamber and a lower surface of the support member. Additionally, after an internal pressure of the internal space exceeds a critical pressure of the processing fluid, a second ejection port ejects the processing fluid in a horizontal direction toward a space between a ceiling surface among the wall surfaces and an upper surface of the substrate.

The invention relates to a method for cleaning a part (1) consisting of a plurality of components (12, 13), wherein the components (12, 13) of the part (1) have cavities (19), wherein the entire part (1) is first provided with a covering which covers the surfaces (4, 7, 16) to be protected, the cavity (19) is then cleaned by a pickle, the cavity (19) is then filled with a coating material which is activated by the application of heat and leads to a coating of the surface within the cavity (19) and simultaneously leads to an at least partial evaporation or removal of the covering from the masked surfaces (4, 7, 16).

A hard coating (30; 40; 50; 60; 70; 80) that is to be applied to a surface of a substrate (12) in such a way that it covers the surface of the substrate (12), wherein the hard coating (30; 40; 50; 60; 70; 80) has a total thickness (Ttotal) in the range of 0.5 - 20 µm and comprises three types of layers (32, 34, 36; 32, 52, 54) that are stacked alternately on top of each other, wherein the three types of layers (32, 34, 36; 32, 52, 54) consist of two types of single-composition layers (32, 34; 32, 52) and one nanolayer alternating layer (36; 54), wherein the two types of single-composition layers (32, 34; 32, 52) are formed by two of each of an A composition, a B composition and a C composition, wherein the nanolayer interlayer (36; 54) contains two types of nanolayers (32n, 34n; 32n, 52n) which are formed by two of each of the A composition, the B composition and the C composition and which are stacked alternately on top of each other;the A composition is a nitride represented by the composition formula AlaCrb′, where the atomic ratios a, b, c satisfy 0.30 ≤ a ≤ 0.85, 0.15 ≤ b ≤ 0.70, 0 ≤ c ≤ 0.10 and a + b + c = 1, and where the optional additional component ′ at least one type of element is selected from B, C, Ti, V, Y, Zr, Nb, Mo, Hf, Ta and W; the B composition is a nitride represented by the composition formula AldCreSif&bgr; wherein the atomic ratios d, e, f, g satisfy 0.20 ≤ d ≤ 0.85, 0.10 ≤ e ≤ 0.50, 0.03 ≤ f ≤ 0.45, 0 ≤ g ≤ 0.10 and d + e + f + g = 1 and wherein the optional additional component &bgr; at least one type of element is selected from B, C, Ti, V, Y, Zr, Nb, Mo, Hf, Ta and W; the C composition is a nitride defined by the composition formula AlhCri(SiC)j&ggr;is represented, wherein the atomic ratios h, i, j, k satisfy 0.20 ≤ h ≤ 0.85, 0.10 ≤ i ≤ 0.50, 0.03 ≤ j ≤ 0.45, 0 ≤ k ≤ 0.10 and h + i + j + k = 1 and wherein the optional additional component �ggr; is at least one type of element selected from B, C, Ti, V, Y, Zr, Nb, Mo, Hf, Ta and W; each of the two types of single composition layers (32, 34; 32, 52) has a thickness (T1, T2) in a range of 0.5 - 1000 nm; and each of the two types of nanolayers (32n, 34n; 32n, 52n) has a thickness in the range of 0.5 - 500 nm and the nanolayer interlayer (36; 54) has a thickness (T3) in the range of 1 - 1000 nm.;

The present invention belongs to the technical field of metal surface laser processing, and specifically relates to a method and device for the precise preparation of metal surface microstructures based on nanosecond lasers. Nanosecond laser processing equipment is used to scan and process a metal sample whose surface is covered with a flowing liquid film; wherein the flowing liquid film is a carbon nanotube suspension, which is used to remove the deposited residues generated during the processing. The present invention can quickly and efficiently create a microstructure of the required shape and arrangement on the metal surface, solving the problem of uneven and poorly formed metal surface microstructures after nanosecond laser processing, and can significantly improve the efficiency and quality of nanosecond laser microstructure processing, improve the microstructure, and enhance surface performance. At the same time, the process is simple, flexible, and the operation is simple and efficient.

The present invention provides a method for measuring the thickness of metal with a surface coating and a transient two-state response, and relates to the field of metal geometric dimension measurement. The measurement method uses pulse current excitation, and the coil magnetic flux will have positive pulse and negative pulse responses. As the metal thickness increases, the rising speed of the positive pulse response and the falling speed of the negative pulse response will gradually decrease and stabilize. Based on the above rules, a metal thickness measurement method based on the steady-state values ​​of the positive pulse and negative pulse responses of the pulse excitation response, a metal thickness measurement method combining the transient two-state of the pulse response and the transient response transition characteristic points, and a metal thickness measurement method in the stable area of ​​the dual-probe pulse response are proposed. The present invention reveals the intrinsic relationship between the transient two-state response of the magnetic flux and the metal thickness, constructs a characteristic characterization method and parameters for the metal thickness properties, and has the advantages of high measurement accuracy, small error, fast response, simplicity and convenience, etc. The advantages are particularly obvious when there is a coating on the metal surface.

A method of selectively depositing a film onto a first substrate surface relative to a second substrate surface. The method includes soaking a substrate surface comprising hydroxyl terminations with a silyl amine to form silyl ether terminations and depositing a film onto surfaces other than the silyl ether termination surface.

The utility model relates to the technical field of appearance defect detection, and discloses a detection device for detecting the surface coating quality of a material to be detected, which comprises a steam module comprising a cover body and a steam generator arranged in the cover body; a moving channel is formed in the cover body and penetrates through the cover body in the first direction. The visual detection module is arranged at the downstream of the steam module along the first direction and is used for acquiring surface image information of the to-be-detected material; and the material conveying module comprises a carrier, the carrier is movably arranged in the first direction, and the carrier is suitable for driving the to-be-detected material to penetrate through the moving channel and reach the visual detection module. According to the utility model, the steam module is used for quickly covering steam on the surface of the to-be-detected material so as to form a uniform film on the surface of the to-be-detected material, steam water drops can amplify the difference between a coating qualified area and a defect area, and on the basis, the image information acquired by the visual detection module can clearly display the outline of the defect area, so that the quality of the to-be-detected material is improved. Therefore, the detection precision and the detection efficiency of the whole equipment are improved.

The present application relates to a kind of flexible plate copper circuit surface covering film removal method, first with single solvent soak softening covering film resin layer, obtain first intermediate state;Then the PI layer of first intermediate state covering film is heat treated, so that PI layer film bubble, delamination, fall off, obtain second intermediate state;Finally, second intermediate state is cleaned, and residual solvent is absorbed, and after drying, third intermediate state is obtained, i.e., finished surface resin layer and PI layer are cleaned, and copper circuit is not damaged;If necessary, ultraviolet laser treatment can be added after obtaining third intermediate state, and the resin remaining on the flexible plate is removed in depth, which provides the possibility for effective failure analysis of flexible plate.

A method for processing the inner surface of a medium-wave infrared focal plane detector cold shield relates to the field of infrared photoelectric detector manufacturing and specifically comprises the following steps: cleaning the machined surface of the detector cold shield and covering the portion of the cold shield surface that does not require blackening with aluminum foil; vapor-depositing an InSb film as a base layer onto the inner surface of the detector cold shield, increasing the partial pressure of Ar gas in a vacuum chamber during vapor deposition, and then covering the inner surface of the detector cold shield with the InSb film again to complete the preparation of the InSb film; preparing a ZnS film on the exterior of the InSb film by ion vapor deposition; after the ion vapor deposition is completed, filling the vacuum chamber with Ar gas, and performing high-temperature baking and annealing on the cold shield; the InSb polycrystalline film prepared by the present invention has a strong film / substrate bonding strength, i.e., adhesion, and is not easy to fall off, thereby achieving good surface coverage; and covering the surface of the InSb polycrystalline film with a layer of ZnS anti-reflection film by ion vapor deposition to ensure that the InSb film has a high absorptivity of incident medium-wave infrared light.

A hard coating (30; 50; 60; 70; 80; 90) to be applied to the surface of a substrate (12) in such a way as to cover the surface of the substrate (12), wherein the hard coating (30; 50; 60; 70; 80; 90) has a total thickness (Ttotal) in the range of 0.5 - 20 µm and comprises three types of layers (32, 38, 40; 34, 38, 42; 36, 40, 42) stacked alternately, wherein the three types of layers (32, 38, 40; 34, 38, 42; 36, 40, 42) consist of a single-composition layer (32; 34; 36) and two types of nanolayer alternating layers (38, 40; 38, 42; 40, 42) consist of the single composition layer (32; 34; 36) being formed by an A composition, a B composition and a C composition, and wherein the two types of nanolayer interlayers (38, 40; 38, 42;40, 42) nanolayers (32n, 34n, 36n) are contained, which are alternately layered on top of each other and which are formed by two of three combinations consisting of a combination of the A composition and the B composition, a combination of the A composition and the C composition and a combination of the B composition and the C composition, such that the nanolayers (32n, 34n; 32n, 36n) contained in one (38; 40) of the two types of nanolayer alternating layers (38, 40; 38, 42; 40, 42) are formed by one of the two of the three combinations and that the nanolayers (32n, 36n; 34n, 36n) contained in the other (40; 42) of the two types of nanolayer alternating layers (38, 40; 38, 42; 40, 42) are formed by one of the two of the three combinations 36n) are formed by the other of the two of the three combinations; the A composition is a nitride which is given by the composition formula AlaCrnSic&agr;is represented where the atomic ratios a, b, c, d satisfy 0.30 ≤ a ≤ 0.80, 0.15 ≤ b ≤ 0.65, 0 ≤ c ≤ 0.45, 0 ≤ d ≤ 0.10 and a + b + c + d = 1, where Si and α are optional additional components and where the optional additional component α at least one type of element is selected from B, C, Ti, V, Y, Zr, Nb, Mo, Hf, Ta and W; the B composition is a nitride represented by the composition formula CreBfSig&bgr;hre, where the atomic ratios e, f, g, h satisfy 0.40 ≤ e ≤ 0.95, 0.05 ≤ f ≤ 0.30, 0 ≤ g ≤ 0.45, 0 ≤ h ≤ 0.10 and e + f + g + h = 1, where Si and μ are optional additional components and where the optional additional component μ at least one type of element is selected from C, Al, Ti, V, Y, Zr, Nb, Mo, Hf, Ta and W; the C composition is a nitride defined by the composition formula AliCrj(SiC)k&ggr;l is represented, wherein the atomic ratios i, j, k, l satisfy 0.20 ≤ i ≤ 0.85, 0.10 ≤ j ≤ 0.50, 0.03 ≤ k ≤ 0.45, 0 ≤ l ≤ 0.10 and i + j + k + l = 1 and wherein the optional additional component ↑ is at least one type of element selected from B, Ti, V, Y, Zr, Nb, Mo, Hf, Ta and W; the single composition layer (32; 34; 36) has a thickness (T1) in a range of 0.5 - 1000 nm; and each of the nanolayers (32n, 34n, 36n) that form the two types of nanolayer interlayers (38, 40; 38, 42; 40, 42) has a thickness in the range of 0.5 - 500 nm and each of the two types of nanolayer interlayers (38, 40; 38, 42; 40, 42) has a thickness (T2, T3) in the range of 1 - 1000 nm.

This invention relates to a femtosecond laser deposition probe and a micro / nano localized deposition device based on a femtosecond laser, which relates to the field of nanofabrication, specifically to the field of surface metallization process equipment technology and the field of probe technology used in this process. It solves the problems of existing probes being unable to simultaneously excite electrochemical reactions and conduct laser light, and the high optical path transmission loss in existing deposition devices. The probe comprises multiple parallel single-mode silica optical fibers, each fiber having a tapered end and its outer surface covered with a metal layer. The laser emitted by the femtosecond laser transmission system in the deposition device is guided by the fiber probe (301) to the surface metallization processing area within the movable reaction pool system (4), and the end of the fiber probe (301) also serves as the working electrode for the chemical reaction within the movable reaction pool system (4). The femtosecond laser deposition probe is suitable for systems combining laser and chemical reactions.

This utility model discloses an adhesive coating device for medical and sanitary dressing substrates, relating to the field of medical and sanitary dressing substrate production technology. It includes a main body with a processing platform inside. A first adhesive outlet is installed at the front end of the main body above the processing platform. A roller is rotatably connected inside the main body behind the first adhesive outlet, and a drying device is installed inside the main body behind the roller. In this utility model, material on the processing platform first passes through the first adhesive outlet, and with the help of the roller, a thin adhesive layer is applied to the material surface. After initial drying by the drying device, the material passes through a second adhesive outlet, and with the help of rollers, a second adhesive layer is applied to the material surface, ensuring the adhesive layer reaches a specified thickness. Compared to one-time molding, two-time molding prevents inconsistent drying speeds between the inner and outer layers of the adhesive layer, which could lead to different shrinkage stresses and reduce the adhesion between the adhesive layer and the material.

The present disclosure relates to a test structure and a method for making the same, wherein the test structure comprises: a substrate, a test circuit, a crack stop groove and a sealing layer, wherein the substrate comprises a cutting area; the test circuit is formed in the cutting area; the crack stop groove is formed in the cutting area, and the crack stop groove is arranged on the side of the test circuit; the sealing layer is formed on the surface of the substrate, covering the crack stop groove so that a gas gap is formed in the crack stop groove. The crack stop groove solves the problem that when a wafer is cut along a cutting path, the cutting path cracks due to the influence of the metal layer in the test circuit, and the cutting stress is transferred to the grain area, which may damage the grain area, and is conducive to improving the product yield and stability.

A hard coating (30; 50; 60; 70; 80; 90) to be applied to the surface of a substrate (12) in such a way as to cover the surface of the substrate (12), wherein the hard coating (30; 50; 60; 70; 80; 90) has a total thickness (Ttotal) in the range of 0.5 - 20 µm and comprises three types of layers (32, 38, 40; 34, 38, 42; 36, 40, 42) stacked alternately, wherein the three types of layers (32, 38, 40; 34, 38, 42; 36, 40, 42) consist of a single-composition layer (32; 34; 36) and two types of nanolayer alternating layers (38, 40; 38, 42; 40, 42) consist of the single composition layer (32; 34; 36) being formed by an A composition, a B composition and a C composition, and wherein the two types of nanolayer interlayers (38, 40; 38, 42;40, 42) nanolayers (32n, 34n, 36n) are contained, which are alternately layered on top of each other and which are formed by two of three combinations consisting of a combination of the A composition and the B composition, a combination of the A composition and the C composition and a combination of the B composition and the C composition, such that the nanolayers (32n, 34n; 32n, 36n) contained in one (38; 40) of the two types of nanolayer alternating layers (38, 40; 38, 42; 40, 42) are formed by one of the two of the three combinations and that the nanolayers (32n, 36n; 34n, 36n) contained in the other (40; 42) of the two types of nanolayer alternating layers (38, 40; 38, 42; 40, 42) are formed by one of the two of the three combinations 36n) are formed by the other of the two of the three combinations; the A composition is a nitride which is given by the composition formula AlaCrbSic&agr;is represented where the atomic ratios a, b, c, d satisfy 0.30 ≤ a ≤ 0.85, 0.10 ≤ b ≤ 0.65, 0.01 ≤ c ≤ 0.45, 0 ≤ d ≤ 0.10 and a + b + c + d = 1 and where the optional additional component Σ at least one type of element is selected from B, C, Ti, V, Y, Zr, Nb, Mo, Hf, Ta and W; the B composition is a nitride represented by the composition formula AleTifSig&bgr;hre, satisfying the atomic ratios e, f, g, h 0.01 ≤ e ≤ 0.85, 0.05 ≤ f ≤ 0.90, 0.05 ≤ g ≤ 0.45, 0 ≤ h ≤ 0.10 and e + f + g + h = 1, and where the optional additional component &bgr; at least one type of element is selected from B, C, Cr, V, Y, Zr, Nb, Mo, Hf, Ta and W; the C composition is a nitride defined by the composition formula AliCrj(SiC)k&ggr;l is represented, wherein the atomic ratios i, j, k, l satisfy 0.20 ≤ i ≤ 0.85, 0.10 ≤ j ≤ 0.50, 0.03 ≤ k ≤ 0.45, 0 ≤ l ≤ 0.10 and i + j + k + l = 1 and wherein the optional additional component ↑ is at least one type of element selected from B, Ti, V, Y, Zr, Nb, Mo, Hf, Ta and W; the single composition layer (32; 34; 36) has a thickness (T1) in a range of 0.5 - 1000 nm; and each of the nanolayers (32n, 34n, 36n) that form the two types of nanolayer interlayers (38, 40; 38, 42; 40, 42) has a thickness in the range of 0.5 - 500 nm and each of the two types of nanolayer interlayers (38, 40; 38, 42; 40, 42) has a thickness (T2, T3) in the range of 1 - 1000 nm.

To provide a technique that can reduce processing defects that may be caused by introducing a processing fluid at a high flow rate into a processing chamber, and can be executed in a short time.SOLUTION: A substrate processing method according to the present invention includes steps of: accommodating a substrate whose upper surface is covered with a liquid film in an internal space of a processing chamber in a state where the substrate is placed on a plate-like support member in a horizontal posture; filling the internal space with a processing fluid in a supercritical state; and discharging the processing fluid from the internal space. Supply of the processing fluid is started from a first discharge port that ejects the processing fluid in a horizontal direction toward a space between a bottom surface of a chamber wall surface and a lower surface of the support member. In addition, after an internal pressure of the internal space exceeds a critical pressure, supply of a pressurized processing fluid into the internal space is started from a second discharge port that ejects the processing fluid in the horizontal direction toward a space between a ceiling surface of the chamber wall surface and the upper surface of the substrate.SELECTED DRAWING: Figure 2

Disclosed are exemplary methods for applying metal amalgams for performance enhancement as thermal interface materials. In exemplary embodiments, a method comprises stenciling or screen printing first and second metal amalgams onto respective first and second opposing thermal transfer surfaces, sides, or substrates in a thermal joint, e.g., within an electronic device. The first and second metal amalgams may establish a thermal path through which heat is flowable from the first thermal transfer surface or substrate (e.g., heat source, etc.) to the first metal amalgam, from the first metal amalgam to the second metal amalgam, and from the second metal amalgam to the second thermal transfer surface or substrate (e.g., heat sink, heat spreader, other heat removal / dissipation structure, etc.). The double-sided printing method allows the metal amalgams to provide robust wetting and surface coverage of both the first and second opposing thermal transfer surfaces, sides, or substrates defining the thermal joint.

The invention discloses a preparation method of a three-dimensional surface high-density non-communicated phosphorescent speckle coating, and relates to the technical field of temperature and strain synchronous measurement, and the preparation method comprises the following steps: step 1, applying a surface modifier on the surface of a substrate to form a low surface modification layer so as to reduce surface energy; 2, spraying a water-based phosphorescent coating layer on the modified layer, wherein the coating comprises a phosphorescent material and a binder; 3, the sprayed phosphorescent coating is subjected to high-temperature curing to form an island-shaped phosphorescent speckle coating, the feature size of a non-communicated island-shaped structure of the island-shaped phosphorescent speckle coating is 5-5 mm, the interval is 1-1 mm, and the coverage rate is larger than 70%. Through surface energy regulation and control, the water-based phosphorescent coating can be induced to spontaneously form an intensive random island-shaped structure. The prepared phosphorescent speckles are high in surface coverage rate, the temperature response characteristic of the phosphorescent material can be completely reserved, and sufficient gray scale characteristics can be effectively provided for a digital image correlation method due to the randomness of the island-shaped speckles and the high contrast ratio of the patterns, so that the strain measurement requirement is met.