53 results about "Silica hydride" patented technology

Methods for processing a substrate are described herein. Methods can include positioning a substrate in a processing chamber, maintaining the processing chamber at a temperature below 400° C., flowing a reactant gas comprising either a silicon hydride or a silicon halide and an oxidizing precursor into the process chamber, applying a microwave power to create a microwave plasma from the reactant gas, and depositing a silicon oxide layer on at least a portion of the exposed surface of a substrate.

The invention relates to a siloxane-based elastomer intended for controlling the permeation of drugs, wherein the elastomer includes 3,3,3,-trifluoropropyl groups attached to the Si-atoms of the siloxane units. The invention relates also to a method for the preparation of a siloxane-based elastomer including 3,3,3,-trifluoropropyl substituents, where the elastomer is intended for controlling the permeation of drugs. In the method either i) a 3,3,3,-trifluoropropyl-substituted vinyl-functional polysiloxane component and a silicon hydride-functional crosslinking agent are crosslinked in the presence of a catalyst, or ii) a 3,3,3,-trifluoropropyl-substituted polysiloxane component is crosslinked in the presence of a peroxide catalyst.

A method for preparing a microporous silicone resin which can be used to form low dielectric constant films useful for electrical insulating coatings on electronic devices comprising (A) contacting a hydridosilicon containing resin with an alkenyltriarylsilane in the presence of a platinum group metal-containing hydrosilation catalyst effecting formation of a silicon resin where at least 5 percent of silicon atoms are substituted with at least one triarylsilylalkylene group and at least 45 percent of silicon atoms are substituted with at least one hydrogen atom and (B) heating the silicon resin of step (A) in an inert atmosphere at a temperature sufficient to effect thermolysis of the triarylsilylalkylene groups from the silicon atoms.

Disclosed are novel phosphine-phosphoramidite compounds which may be employed in combination with a catalytically-active metal to effect a wide variety of reactions such as asymmetric hydrogenations, asymmetric reductions, asymmetric hydroborations, asymmetric olefin isomerizations, asymmetric hydrosilations, asymmetric allylations, asymmetric conjugate additions, and asymmetric organometallic additions. Also disclosed are a process for the preparation of the phosphine-phosphoramidite compounds, metal complex compounds comprising at least one of the phosphine-phosphoramidite compounds and a catalytically-active metal and hydrogenation processes utilizing the metal complex compounds.

Disclosed is a crosslinked polysiloxane network comprising both residual Si—H linkages and a Lewis acid catalyst, wherein the network is derived from a linear hydridosiloxane, a branched hydridosiloxane, a cyclic hydridosiloxane or a mixture of a linear hydridosiloxane or branched hydridosiloxane and a cyclic hydridosiloxane. Disclosed also is a method to produce the crosslinked polysiloxane network, alternatively accompanied by a silane with aliphatic, aromatic, or cycloaliphatic substituents by reacting in the presence of an effective amount of a Lewis acid catalyst a linear hydridosiloxane, a branched hydridosiloxane, a cyclic hydridosiloxane or a mixture of a linear hydridosiloxane or branched hydridosiloxane and a cyclic hydridosiloxane.

An optical semiconductor device in which an optical semiconductor element connected to a silver-plated copper lead frame is sealed with an addition curing silicone resin composition, the addition curing silicone resin composition having (A) organopolysiloxane that contains an aryl group and an alkenyl group and does not contain an epoxy group; (B) organohydrogenpolysiloxane that has at least two hydrosilyl groups per molecule and an aryl group, the organohydrogenpolysiloxane that contains 30 mol % or more of an HR₂SiO_0.5 unit in a constituent unit having an amount that a molar ratio of the hydrosilyl group in the component (B) with respect to the alkenyl group in the component (A) is 0.70 to 1.00; and (C) a hydrosilylation catalyst having a catalytic amount.

Disclosed is a method for preparing a thermoplastic elastomer, the method comprising: (I) mixing (A) a rheologically stable polyamide resin with a melting point or a glass transition temperature of 25°C to 275°C, (B) a mixture comprising the following substances Silicone base: (B') 100 parts by weight of pure diorganopolysiloxane rubber having a plasticity of at least 30 and containing an average of at least 2 alkenyl groups in its molecule and (B") 5-200 parts by weight Reinforcing filler, the weight ratio of the silicone base to the polyamide resin is greater than 35:65-85:15, (C) 0.1-5 parts by weight of hindered phenolic compound, relative to every 100 parts by weight of the polyamide and the silicon An oxane base, (D) an organic silicon hydride compound containing an average of at least 2 silicon-bonded hydrogen groups in its molecule and (E) a hydrosilylation catalyst, components (D) and (E) present in an amount sufficient to vulcanize the diorganopolysiloxane (B'); and (II) dynamically vulcanize the diorganopolysiloxane (B'), wherein at least one thermoplastic elastomer selected from tensile strength or elongation The thermoplastic elastomer has bulk properties at least 25% greater than the respective properties of a corresponding simple blend of diorganopolysiloxanes which are not vulcanized, and the thermoplastic elastomer has an elongation of at least 25%.

A method of manufacturing a purified product of a liquid medium-chain alkyl-modified polydimethylsiloxane that is free of a specific (unpleasant) odor and is practically odorless, the method comprising the steps of: [A] synthesizing a liquid medium-chain alkyl-modified polydimethylsiloxane by carrying out a hydrosilylation reaction between a hydrosilyl-containing polydimethylsiloxane and an α-olefin with 4 to 18 carbon atoms; and [B] subjecting a crude product of the liquid medium-chain alkyl-modified polydimethylsiloxane obtained in preceding step [A] to an odor-removing treatment by conducting a hydrogenation reaction which is carried out in the presence of a hydrogenation catalyst.

The invention discloses a preparation method of a silica gel sealing medium partition plate, relating to a preparation method of a heat-resistant sealing gasket. The silica gel sealing medium partition plate comprises the following raw material components in parts by weight: 100 parts of dimethyl siloxane and vinyl siloxane polymers, 50 parts of special white carbon black for silicon rubber, 2 parts of zinc oxide, 6 parts of silane, 10 parts of silicon hydride oil, 1 part of DBPMH (2,5-dimethyl-2,5-di (tert-butylperoxy) hexane) and 1.5 parts of boric acid ester and is prepared by copolymerizing, forming and vulcanizing the raw materials in parts by weight per se. The silica gel sealing medium partition plate is formed by copolymerizing dimethyl siloxane and a small amount of vinyl siloxane, wherein the content of vinyl is 0.1%-0.3%, the tensile strength of a finished product reaches 7.2 MPa, the elongation at break reaches 600%, the hardness reaches 61 (A), the breakdown voltage reaches 19 Mv/m, the volume resistance reaches 9.2*1014 omega.cm, the brittleness temperature reaches -65 DEG C, and the using temperature range is -50 DEG C-+250 DEG C.

The present invention relates to a process of making a polymerizable hybrid polysiloxane or a polymerizable hybrid siloxane. The process includes reacting an organopolysiloxane or organosiloxane having an average of at least 3 silicon hydride (SiH) groups per molecule, a polyoxyethylene, and a catalyst. The process also optionally includes adding a stabilizer, a catalytic inhibitor, a solvent, and an unsaturated reactant selected from substituted and unsubstituted unsaturated organic compounds.

The invention discloses a 3D structured light 940 nm narrow-band optical filter and a preparation method thereof; the optical filter includes a substrate, wherein a silicon oxide layer and a siliconhydride layer are alternately evaporated on one surface of the substrate; the other surface of the substrate is alternately evaporated with silicon oxide layers and silicon hydride layers, the total number of the silicon oxide layers and the silicon hydride layers on each surface is set to be 20-40, the thickness of the silicon oxide layer on each surface is set to be 1300-2000nm, and the thickness of the silicon hydride layer on each surface is set to be 400-800nm. According to the optical filter, the refractive index of silicon hydride can be controlled to 3.8-4.5, the refractive index of silicon dioxide can reach 1.4-1.6, and the requirement for large angle and small offset can be met; the adopted film system scheme is accurate in wavelength positioning and good in steepness; the spacelayer is made of a high-refractive-index silicon hydride material, and the coupling layer is made of a low-refractive-index silicon dioxide material, so that the offset caused by the angle effect is smaller than that caused by the low-refractive-index material.

The invention provides an infrared band-pass filtering structure which is formed by alternately stacking a plurality of silicon aluminum hydride layers and a plurality of lower refractive index layers, the lower refractive index layers are oxide, the infrared band-pass filtering structure is provided with a passband which is at least partially overlapped within the wavelength range of 800 nm to 1600 nm, the passband is provided with a central wavelength, and the incident angle of the central wavelength is changed from 0 degree to 30 degrees, the magnitude deviation amplitude of the central wavelength is smaller than 11 nm; the infrared band-pass filter is characterized in that the infrared band-pass filtering structure is formed on a first side surface of a substrate, and an anti-reflection layer is formed on a second side surface, opposite to the first side surface, of the substrate; therefore, the sputtering efficiency can be improved, the manufacturing cost can be greatly reduced, the warping amount of the film layer can be reduced, and the problem that corners are prone to breakage during post-processing cutting is solved.

The present invention relates to a curable organopolysiloxane composition, which comprises:

(A) an organocyclosiloxane having alkenyl groups, represented by the following formula (I)

wherein n=3 or 4;

(B) a hydrosilicone resin of formula (II)

(R¹R²R³SiO_1/2)_m.(R⁴R⁵SiO_2/2)_D.(R⁶SiO_3/2)_T.(SiO_4/2)_Q  (II)

wherein R¹ to R⁵ are identical or different groups selected from organic groups and hydrogen atom, and at least one of R¹ to R⁵ is a hydrogen atom directly bonded to a silicon atom, and on average at least two hydrogen atoms directly bonded to silicon atoms are contained in one hydrosilicone resin molecule, R⁶ is an organic group identical to or different from R¹ to R⁵, as organic groups R¹ to R⁶ may independently be linear/branched alkyl or alkenyl groups having 1-20 carbon atoms or halides thereof; cycloalkyl groups or cycloalkenyl groups having 5-25 carbon atoms or halides thereof;

M, T and Q each represents a number ranging from 0 to less than 1, 0<D<1, M+D+T+Q=1, and T+Q>0; and

(C) platinum-based catalysts.

The invention provides a terrace and a construction method thereof, and belongs to the research field of terraces. The invention provides a terrace for overcoming the problem that the exiting terrace material cannot be directly applied to a swimming pool. The terrace is prepared from the following components in parts by weight: 25-30 parts of sawdust, 30-40 parts of plastic, 10-20 parts of polyacrylate, 10-15 parts of butyl acetate, 3-5 parts of corundum powder, 3-5 parts of butadiene rubber, 5-10 parts of hydrogenated silicon oil, 1-3 parts of plasticizer, 0.2-0.3 part of preservative, 3-5 parts of diethylene triamine and 2-4 parts of toner. The terrace provided by the invention is used for reducing possible risks of hard bottom and side walls of the swimming pool on users, reinforcing the adaptability of the inner walls of the swimming pool on impact caused by water, non-water and different water temperatures and enhancing the adaptability of the swimming pool, so that the terrace is conducive to popularization and application.

Provided is a catalyst which comprises a compound represented by formula (1) and which exhibits activity for at least one type of reaction selected from among hydrosilylation reaction or hydrogenation reaction with respect to an aliphatic unsaturated bond and hydrosilane reduction reaction with respect to a carbon-oxygen unsaturated bond or a carbon-nitrogen unsaturated bond. Formula (1): M_n(L_m) {M represents Fe, Co, or Ni having an oxidation number of 0, L represents an isocyanide ligand represented by formula (2), n denotes an integer of 1-8, and m denotes an integer of 2-12. Formula (2): (CN)_x—R¹ (R¹ represents a mono- to trivalent-organic group having 1-30 carbon atoms, optionally being substituted by a halogen atom, and optionally having interposed therein one or more atoms selected from among O, N, S, and Si; and x denotes an integer of 1-3)}.

The invention relates to the technical field of sputtering film forming, and particularly discloses a film coating method and facility. The method comprises the steps that argon ion plasma bombardmentis conducted on a target material in the inertia environment, and accordingly a first silicon film clad layer is formed on the surface of a to-be-coated piece; ionization is conducted on the first silicon film clad layer in the hydrogen-rich environment, and accordingly the first silicon film clad layer is converted into a silane clad layer; argon ion plasma beam bombardment is conducted on the target material in the inertia environment, and accordingly a second silicon film clad layer is formed on the surface of the silane clad layer; and ionization is conducted on the second silicon film clad layer in the hydrogen-rich environment, and accordingly the second silicon film clad layer is converted into a silicon dioxide clad layer. The film coating method and facility can solve the problemthat according to a traditional film coating technology, poorness is likely to be caused due to slag falling.

Cationic silicon (II) compounds catalyze reaction of organosiloxanes bearing lateral Si—H functions to crosslink the polymers. Hydridosilanes may also be prepared by this reaction. The cationic silicon (II) compounds contain a silicon (II) moiety where silicon is π-bonded to a cyclopentadienyl anion.

The invention discloses a method for preparing a hydrogenated silicon carbon film coating by magnetron sputtering, which comprises the following steps of: pretreating a substrate, putting the pretreated substrate into magnetron sputtering coating equipment, taking a planar Si target and a planar C target as sources of corresponding elements, arranging the Si target and the C target on the inner wall of a furnace body in a target-to-target manner, and controlling the sputtering rate of the targets by adjusting the power of a medium-frequency pulse power supply; high-purity Ar is used as ionization gas, so that an effective glow discharge process is ensured; according to the method, high-purity H2 is adopted as a reaction gas, is ionized and is combined with Si and C elements, a hydrogenated silicon carbon film is deposited on the surface of a substrate, and the stoichiometric ratio of Si to C is changed through the change of the content of doped C, so that the photoelectric property of the film is changed. The prepared hydrogenated silicon carbon thin film can be widely applied to the aspects of solar cells, thin film transistors, light-emitting diodes, ultraviolet image sensors, fine superfluid coatings, anti-corrosion and anti-oxidation coatings and the like.