Preparation method for high-refractive index hydrogenated silicon film, high-refractive index hydrogenated silicon film, light filtering lamination and light filtering piece

Abstract

The invention discloses a preparation method for a high-refractive index hydrogenated silicon film, the high-refractive index hydrogenated silicon film, a light filtering lamination and a light filtering piece and relates to the technical field of optical films. The preparation method comprises the following steps that firstly, by means of magnetic controlled Si target sputtering, Si deposits on abase body, and a silicon film is formed; and secondly, the hydrogenated silicon film containing oxygen is formed through the silicon film under the environment where activated hydrogen and active oxygen are contained, the amount of the activated oxygen accounts for 4%-99% of the total amount of the activated hydrogen and the activated oxygen, or, the hydrogenated silicon film containing nitrogenis formed through the silicon film under the environment where the activated hydrogen and the activated nitrogen are contained, and the amount of the activated nitrogen accounts for 5%-20% of the total amount of the activated hydrogen and the activated nitrogen. According to the preparation method, sputtering and a reaction are separately conducted, firstly, by means of magnetic controlled Si target sputtering, Si deposits on the base body, then, plasmas of the activated hydrogen and the activated oxygen / nitrogen react with the silicon to obtain the oxygen or nitrogen containing SiH, the poisoning problem of a target is avoided, and the SiH film has a relatively high refractive index and relatively low absorption.

Description

technical field [0001] The invention relates to the technical field of optical thin films, in particular to a method for preparing a high-refractive-index hydrogenated silicon film, a high-refractive-index hydrogenated silicon film, a filter stack and an optical filter. Background technique [0002] Silicon hydrogenated thin films have attracted much attention due to their wide application prospects in microelectronic devices such as infrared imaging sensors, solar cells and thin film transistors. The preparation process of silicon hydride is mainly divided into chemical deposition methods, such as plasma enhanced chemical vapor deposition, etc.; physical deposition methods, such as radio frequency sputtering. [0003] In near-infrared imaging systems such as 3D, a narrow-band bandpass filter is used, which requires that even if the light is incident at a large angle, the offset of its central wavelength with the angle should be as small as possible, so as to ensure a wider ...

AI Technical Summary

Problems solved by technology

However, this technology adopts the principle of reactive sputtering, and there may be "poisoning" of the target material, that is, the target material is easily polluted by hydrogen gas, resulting in unstable production and other problems.

[0005] In order to produce a filter with low polarization effect, it is difficult for general sputtering equipment to prepare silicon hydrogenated silicon with a high refractive index of more than 2.5 and an extinction coefficient lower than 0.0005, and complex and special coating equipment must be used

However, the production efficiency of the coating machine made by the existing technology is low, which causes the cost of a single chip to remain high.

Images