82results about How to "Low extinction coefficient" patented technology

A method of forming a transparent hydrocarbon-based polymer film on a substrate by plasma CVD includes: introducing a main gas consisting of a hydrocarbon gas (CαHβ, wherein α and β are natural numbers) and an inert gas at a flow ratio (R) of CαHβ / inert gas of 0.25 or less into a CVD reaction chamber inside which a substrate is placed; and forming a hydrocarbon-based polymer film on the substrate by plasma polymerization of the gas at a processing temperature (T) wherein T≦(−800R+500).

The invention discloses a preparation method for a high-refractive index hydrogenated silicon film, the high-refractive index hydrogenated silicon film, a light filtering lamination and a light filtering piece and relates to the technical field of optical films. The preparation method comprises the following steps that firstly, by means of magnetic controlled Si target sputtering, Si deposits on abase body, and a silicon film is formed; and secondly, the hydrogenated silicon film containing oxygen is formed through the silicon film under the environment where activated hydrogen and active oxygen are contained, the amount of the activated oxygen accounts for 4%-99% of the total amount of the activated hydrogen and the activated oxygen, or, the hydrogenated silicon film containing nitrogenis formed through the silicon film under the environment where the activated hydrogen and the activated nitrogen are contained, and the amount of the activated nitrogen accounts for 5%-20% of the total amount of the activated hydrogen and the activated nitrogen. According to the preparation method, sputtering and a reaction are separately conducted, firstly, by means of magnetic controlled Si target sputtering, Si deposits on the base body, then, plasmas of the activated hydrogen and the activated oxygen / nitrogen react with the silicon to obtain the oxygen or nitrogen containing SiH, the poisoning problem of a target is avoided, and the SiH film has a relatively high refractive index and relatively low absorption.

Disclosed herein are a method of depositing a thin film and a method of manufacturing a semiconductor using the same, having high selectivity by increasing etching resistance while an extinction coefficient associated with anti-reflectivity is maintained low. The method of depositing a thin film according to the invention includes (a) depositing an carbon anti-reflective film on the bottom film of a substrate; and (b) adding a compound containing nitrogen (N), fluorine (F) or silicon (Si) to the surface or the inner portion of the carbon anti-reflective film, to deposit a thin film of a-C:N, a-C:F or a-C:Si, having high selectivity, to a thickness from 1 to 100 nm using an atomic layer deposition process. Therefore, an ultrathin film having etching resistance is formed on or in the carbon anti-reflective film and the density and compressive stress of the carbon anti-reflective film are increased, thus increasing etching selectivity.

The invention discloses a solar spectrum selective absorptive coating. The structure of the coating sequentially comprises the following parts from a substrate to an air interface: the substrate 1, an infrared reflection layer 2, absorption layer metal 31 and semiconductor absorption layer germanium with heat matching functions and an antireflection layer 4 which comprises a high refraction index medium layer 41 and a low refraction index medium layer 42. The solar spectrum selective absorptive coating has excellent spectrum selectiveness, and the absorption-reflection transition region is steep; the solar spectrum selective absorptive coating has a high absorption ratio alpha in the solar spectral range of 0.3 to 2.5 micrometers, and has a very low radiance ratio epsilon in the thermal radiation infrared region of 2 to 50 micrometers, and the ratio of alpha to epsilon is much higher than that of present commercial products, so that the solar spectrum selective absorptive coating is applicable to low-power focused medium-temperature solar thermal collectors. Furthermore, the manufacturing process is simple, and the requirement on coating equipment is low, so that the solar spectrum selective absorptive coating is suitable for large-scale low-cost production. With the SiO2 / TiO2 / Ge / Ti / Al structure disclosed by the invention, compared with a coating having a SiO2 / TiO2 / Ge / Al structure with an absorption layer manufactured singly from Ge, the coating disclosed by the invention is advantaged in that the thermal stability of the coating is obviously improved, and the coating has higher absorptivity and similar radiance.

Disclosed is a Ti-Nb oxide sintered body sputtering target which is characterized by being composed of titanium (Ti), niobium (Nb) and the balance made up of oxygen and unavoidable impurities, with the atomic ratio of Ti and Nb satisfying the following relation: 0.39 = (Nb / (Ti + Nb)) = 0.79. The Ti-Nb oxide sintered body sputtering target has high refractive index and low extinction coefficient. A Ti-Nb oxide thin film is obtained using the sputtering target, and the Ti-Nb oxide sintered body sputtering target is capable of forming a film at high rate. The thin film has excellent transmittance, while being suppressed in decrease or change of the reflectance. Consequently, the thin film is useful as an interference film of an optical information recording medium, a protective film, or a thin film that is used as a part of a constituent layer of an optical recording medium. In addition, the thin film can be applied to a glass substrate, in other words, the thin film can be used as a heat ray-reflecting film, an anti-reflection film or an interference filter.