Chalcogenide phase-material with transparent communication waveband and preparation method thereof

A phase change material and wave band technology, applied in the field of microelectronics, can solve the problems of high extinction coefficient and low thermal stability in the communication band, and achieve the effects of low extinction coefficient, high thermal stability and good phase stability.

Inactive Publication Date: 2020-04-21
SUN YAT SEN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The technical problem mainly solved by the present invention is to provide a chalcogenide phase-change material transparent to the communication band and its preparation method, so as to solve the shortcomings of traditional phase-change materials such as high extinction coefficient and low thermal stability at the wavelength of 1550nm in the communication band

Method used

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  • Chalcogenide phase-material with transparent communication waveband and preparation method thereof
  • Chalcogenide phase-material with transparent communication waveband and preparation method thereof
  • Chalcogenide phase-material with transparent communication waveband and preparation method thereof

Examples

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Effect test

Embodiment 1

[0029] The general chemical formula of the transparent chalcogenide phase change material in the communication band prepared in this example is Ge z Sb 2 Te y -S(Se) x , in this example, S(Se) selects Se, z=2, y=1, x=4.

[0030] Ge 2 Sb 2 Se 4 Te 1 The thin film is prepared by thermal evaporation method, and the vacuum degree is less than 10 during the preparation. -6 In the vacuum chamber with a pressure of Pa, place a 2cm×2cm quartz substrate on the upper sample stage of the vacuum coating machine, and use the heating heat to evaporate the tantalum boat to heat the Ge 2Sb 2 Se 4 Te 1 The target glass is deposited at a deposition rate of 10A / s, and the deposition rate and film thickness are monitored in real time by the film thickness meter inside the coating machine. Concrete preparation method comprises the following steps:

[0031] 1. Select a quartz substrate with a size of 2cm×2cm, clean the surface and back, remove dust particles, organic and inorganic impur...

Embodiment 2

[0046] The general chemical formula of the transparent chalcogenide phase change material in the communication band prepared in this example is Ge z Sb 2 Te y -S(Se) x , in this example, S(Se) selects S, z=2, y=1, x=4.

[0047] Ge 2 Sb 2 S 4 Te 1 The thin film is prepared by thermal evaporation method, and the vacuum degree is less than 10 during the preparation. -6 In the vacuum chamber with a pressure of Pa, place a 2cm×2cm quartz substrate on the upper sample stage of the vacuum coating machine, and use the heating heat to evaporate the tantalum boat to heat the Ge 2 Sb 2 S 4 Te 1 The target glass is deposited at a deposition rate of 10A / s, and the deposition rate and film thickness are monitored in real time by the film thickness meter inside the coating machine. Concrete preparation method comprises the following steps:

[0048] 1. Select a quartz substrate with a size of 2cm×2cm, clean the surface and back, remove dust particles, organic and inorganic impurit...

Embodiment 3

[0063] The general chemical formula of the transparent chalcogenide phase change material in the communication band prepared in this example is Ge z Sb 2 Te y -S(Se) x , in this example, S(Se) selects S, z=0, y=0, x=3.

[0064] The Sb2S3 thin film is prepared by thermal evaporation method, and the vacuum degree is less than 10 during preparation. -6 In a vacuum chamber with a pressure of Pa, place a 2cm×2cm quartz substrate on the upper sample stage of the vacuum coating machine, heat the Sb2S3 target glass by evaporating a tantalum boat with heating heat, and deposit a film at a deposition rate of 10A / s. The rate and film thickness are monitored in real time by the film thickness gauge inside the coating machine. Concrete preparation method comprises the following steps:

[0065] 1. Select a quartz substrate with a size of 2cm×2cm, clean the surface and back, remove dust particles, organic and inorganic impurities:

[0066] a) Ultrasonic the quartz substrate with 30W po...

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Abstract

The invention, which belongs to the technical field of microelectronics, relates to a chalcogenide phase-change material with a transparent communication waveband and a preparation method thereof. Thegeneral chemical formula of the components of the chalcogenide phase-change material is GezSb2Tey-S (Se) x, wherein the x is larger than 0 and is less than or equal to 4, the y is larger than or equal to 0 and is less than or equal to 4, and the z is larger than or equal to 0 and is less than or equal to 2. The material can be quickly and reversibly converted between a high refractive index (amorphous state) and a low refractive index (crystalline state), and is a novel phase-change material. More importantly, compared with the traditional Ge2Sb2Te5, the chalcogenide phase-change material disclosed by the invention has extremely low optical absorption in a communication waveband range, rapid reversible phase change can be realized under the action of a laser pulse or a voltage pulse, anda relatively large refractive index difference is kept before and after phase change. Moreover, the material system maintains stable non-volatility, and stably maintains the original state without external excitation, so that a problem of high absorption loss of the traditional phase-change material in the communication waveband is solved; and a novel active regulation and control high-speed communication device is realized.

Description

technical field [0001] The invention relates to the technical field of microelectronics, and more specifically relates to a chalcogenide phase-change material transparent to communication bands and a preparation method thereof. Background technique [0002] With the introduction of concepts such as photonic integrated circuits and photonic computers, the application research of non-volatile phase change materials (PCM) in optical switches, optical logic devices and optical storage devices has gradually entered people's field of vision. However, when the existing PCM is applied to optical circuits and optical devices, the problem of the PCM light transmission band is involved. Therefore, for optical phase change materials used in integrated optical devices, in addition to having their basic performance as PCM, attention also needs to be paid to their applicable optical working band. It is hoped that its loss at the wavelength used is low, and the refractive index difference ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G02F1/00
CPCG02F1/0009G02F1/0063G02F1/009
Inventor 张斌杨泽林李朝晖曾平羊夏迪宋景翠朱莺
Owner SUN YAT SEN UNIV
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