Thin Film Mainly Comprising Titanium Oxide, Sintered Sputtering Target Suitable for Producing Thin Film Mainly Comprising Titanium Oxide, and Method of Producing Thin Film Mainly Comprising Titanium Oxide

a technology of titanium oxide and sputtering target, which is applied in the direction of diaphragms, metallic material coating processes, record information storage, etc., can solve the problems of low reflectivity and strength to prevent alteration, and achieve high refractive index, superior transmittance, and low extinction coefficient

Inactive Publication Date: 2010-11-04
JX NIPPON MINING & METALS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

[0018]As described above, the present invention provides a thin film mainly comprising titanium oxide having a high refractive index and a low extinction coefficient, a sintered sputtering target mainly comprising titanium oxide suitable for producing the thin film, and a method of producing a thin film mainly comprising titanium oxide. The thin film obtained by the present invention yields a great effect as films and layers for an optical information recording medium.
[0019]In addition, the thin film of the present invention has superior transmittance, minimally deteriorates in reflectance, and is particularly useful as an interference film or a protective film for an optical information recording medium.
[0020]The protective layer of high-melting dielectrics must be durable against repeated thermal stress caused by the heating and cooling, and must not allow such thermal effect to influence the reflective film or other areas, and it is also required to be thin and have low reflectivity and strength to prevent alteration. The thin film mainly comprising titanium oxide of the present invention has properties that can be applied to such a material.
[0021]In addition, since the oxygen content during sputtering can be adjusted to be within a low range, the present invention also yields an effect of being able to inhibit the deterioration of the deposition rate.

Problems solved by technology

The protective layer of high-melting dielectrics must be durable against repeated thermal stress caused by the heating and cooling and must not allow such thermal effect to influence the reflective film or other areas, and it is also required to be thin and have low reflectivity and strength to prevent alteration.
However, there are problems in its application as precision optics or electronic parts requiring films having a high refractive index and low absorption.
In particular, it is considered that there are problems on the short wavelength side in the vicinity of 400 nm.

Method used

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Examples

Experimental program
Comparison scheme
Effect test

example 1

[0044]As the raw materials, titanium oxide (TiO2) having an average grain size of 10 μm and a purity of 4N (99.99%) and silver powder having an average grain size of 15 μm and a purity of 3N (99.9%) were used. These raw materials were blended to achieve TiO2:Ag=99:1 (at %) and mixed.

[0045]1 kg of the mixed powder was mixed with a wet ball mill so that the silver is uniformly dispersed in the titanium oxide powder. Subsequently, the mixed powder that was dried until moisture evaporated was filled in a carbon die and subject to hot press. The hot press conditions were 900° C. and bearing surface pressure of 300 kgf / cm2. The obtained sintered compact was machined to prepare a target of φ 152 mm and 5 mmt. Consequently, a target having a density of 96% and a specific resistance of 7 Ωcm was obtained. The grain size of the Ag phase in the target was 15 μm. No abnormal discharge occurred during the sputtering. The results are shown in Table 1.

TABLE 1Abnormal DischargeSpecificSputteringGra...

example 2

[0049]As the raw materials, as with Example 1, titanium oxide (TiO2) having an average grain size of 10 μm and a purity of 4N (99.99%) and silver powder having an average grain size of 10 μm and a purity of 3N (99.9%) were used. These raw materials were blended to achieve TiO2:Ag=90:10 (at %) and mixed.

[0050]1 kg of the mixed powder was mixed with a dry blender so that the silver is uniformly dispersed in the titanium oxide powder. Subsequently, the mixed powder was filled in a carbon die and subject to hot press. The hot press conditions were 920° C. and bearing surface pressure of 350 kgf / cm2. The obtained sintered compact was machined to prepare a target of φ 152 mm and 5 mmt. Consequently, a target having a density of 96% and a specific resistance of 2 Ωcm was obtained. The grain size of the Ag phase in the target was 10 μm. No abnormal discharge occurred during the sputtering.

[0051]The results are also shown in Table 1.

[0052]Subsequently, the sputtering target produced as descr...

example 3

[0067]As the raw materials, as with Example 1, titanium oxide (TiO2) having an average grain size of 10 μm and a purity of 4N (99.99%) and silver powder having an average grain size of 10 μm and a purity of 3N (99.9%) were used. These raw materials were blended to achieve TiO2:Ag=99.9:0.1 (at %) and mixed.

[0068]1 kg of the mixed powder was mixed with a dry blender so that the silver is uniformly dispersed in the titanium oxide powder. Subsequently, the mixed powder was filled in a carbon die and subject to hot press. The hot press conditions were 920° C. and bearing surface pressure of 350 kgf / cm2. The obtained sintered compact was machined to prepare a target of φ 152 mm and 5 mmt. Consequently, a target having a density of 98% and a specific resistance of 10 Ωcm was obtained. The grain size of the Ag phase in the target was 10 μm. No abnormal discharge occurred during the sputtering.

[0069]The results are also shown in Table 1.

[0070]Subsequently, the sputtering target produced as d...

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Abstract

Provided is a thin film mainly comprising titanium oxide, wherein the thin film comprises components of Ti, Ag and O and contains 29.6 at % or more and 34.0 at % or less of Ti, 0.003 at % or more and 7.4 at % or less of Ag, and oxygen as the remainder thereof, and O / (2Ti+0.5Ag) as a ratio of oxygen to metals is 0.97 or more. This invention aims to provide a thin film mainly comprising titanium oxide having a high refractive index and a low extinction coefficient, a sintered sputtering target mainly comprising titanium oxide suitable for producing the thin film, and a method of producing a thin film mainly comprising titanium oxide. This invention also aims to provide a thin film that has superior transmittance, minimally deteriorates in reflectance, and is useful as an interference film or a protective film for an optical information recording medium. It is also possible to apply this film to a glass substrate; that is, which can be used as a heat reflective film, an antireflective film, and an interference filter.

Description

TECHNICAL FIELD[0001]The present invention relates to a thin film mainly comprising titanium oxide having a high refractive index and a low extinction coefficient, a sintered sputtering target mainly comprising titanium oxide suitable for producing the thin film, and a method of producing a thin film mainly comprising titanium oxide.BACKGROUND ART[0002]In recent years, technology of high-density optical recording disks such as high-density optical information recording media capable of rewriting without requiring a magnetic head has been developed, and these disks are rapidly being commercialized. In particular, CD-RW appeared for the first time in 1977 as a rewritable CD, and is the most popular phase-change optical disk today. This CD-RW has a rewrite cycle of approximately 1000 times.[0003]Further, DVD-RW for use as a DVD has been developed and commercialized, and the layer structure of this disk is identical with or similar to the structure of CD-RW. This DVD-RW has a rewrite cy...

Claims

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Application Information

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Patent Type & Authority Applications(United States)
IPC IPC(8): C23C14/08C23C14/34G11B7/24G11B7/254G11B7/257
CPCB22F2998/00C04B35/46C04B35/645C04B2235/408C04B2235/5436C04B2235/77C04B2235/79G11B7/266C23C14/083C23C14/3414G11B7/2578C22C29/12C04B2235/9646C23C14/34G11B7/2548G11B2007/25408H01J37/3429
Inventor TAKAMI, HIDEOYAHAGI, MASATAKA
Owner JX NIPPON MINING & METALS CO LTD
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