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Method for reducing surface ice adhesion strength of silicon wafer

A technology of adhesion strength and silicon wafer surface, applied in photovoltaic power generation, photovoltaic modules, electrical components, etc., to improve power generation efficiency and prevent the accumulation of ice and snow

Active Publication Date: 2020-05-19
HANGZHOU DIANZI UNIV
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  • Abstract
  • Description
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  • Application Information

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Problems solved by technology

But there are still defects, that is, how to maintain the long-term stability of the hollow structure inside the mold, so that the anti-icing surface can be used stably for a long time under the action of shear force

Method used

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  • Method for reducing surface ice adhesion strength of silicon wafer
  • Method for reducing surface ice adhesion strength of silicon wafer
  • Method for reducing surface ice adhesion strength of silicon wafer

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Embodiment Construction

[0036] The present invention will be specifically introduced below in conjunction with the accompanying drawings and specific embodiments.

[0037] Such as figure 1 As shown, when the PDMS membrane 2 is subjected to the shear force (that is, thrust) of the ice accumulation 4, the PDMS membrane 2 between the ice accumulation 4 and the micron hole will generate cracks 3 induction points, which is conducive to the reduction of ice adhesion strength .

[0038] Such as figure 2 As shown, a method for reducing the ice adhesion strength on the surface of a silicon wafer comprises the following steps:

[0039] Step S10, preparing micron holes on the surface of the silicon wafer 1;

[0040] Step S20, covering the surface of the silicon wafer 1 with micron holes with a PDMS film;

[0041] Step S30, curing the PDMS film 2 on the surface of the silicon wafer 1 .

[0042] The micron hole has a height below 1.1 micron. Micro-holes with a height of less than 1.1 microns have a greater...

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Abstract

The invention discloses a method for reducing surface ice adhesion strength of a silicon wafer, which comprises the following steps of: S10, preparing micropores with the height of 1.1 microns on thesurface of a silicon material, S20, covering the surface of the silicon material with the micropores with a PDMS film, and cleaning the surface of the silicon material with the micropores by using oxygen plasma before the PDMS film is adhered to the surface of the silicon material with the micropores, and S30, curing the PDMS film on the surface of the silicon material. The method S10 for preparing the micropores in the surface of the silicon material comprises the following substeps of: S101, spin-coating photoresist on the surface of the silicon material, S102, exposing the photoresist in amicropore region to be prepared, and S103, etching the exposure area.

Description

technical field [0001] The invention relates to the technical field of anti-icing on the surface of silicon materials, in particular to a method for reducing the adhesion strength of ice on the surface of silicon wafers. Background technique [0002] As temperatures drop, freezing of water is inevitable given enough time. Ice accumulation often brings a lot of inconvenience and potential threats to normal production and life. Anti-icing technology on the surface of materials can greatly reduce such disasters. As a main photovoltaic material, crystalline silicon material occupies most of the market and is the mainstream material of solar cells. However, the accumulation of frost, snow and ice on the surface of silicon materials greatly affects its power generation efficiency. How to remove frost, snow and ice on the surface of silicon materials conveniently and effectively will be a big problem to be solved. [0003] Current methods to reduce the accumulation of ice and sn...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H02S40/12C09D183/04
CPCC09D183/04H02S40/12Y02E10/50
Inventor 何志伟夏丽娜
Owner HANGZHOU DIANZI UNIV
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