Porous material substrate used in GaN film grown by HVPE method and method thereof

Abstract

The invention relates to a nano-porous material substrate used in hydride vapor phase epitaxy (HVPE) gallium nitride (GaN) film and a preparation method thereof. The invention is characterized in that composite nano-porous material is taken as a substrate for epitaxially growth of a thick film GaN, and the quality of crystalloid can be improved, meanwhile, the substrate can be conveniently stripped. A metal Al thin layer is firstly sedimentated on a GaN template taking Si as the substrate, even porous meshed anodic aluminum oxide (AAO) is formed by an electrochemic method, porous GaN material is obtained by erosion of technologies such as induced coupling plasma etching (ICP) and the like, and the bottom of the holes are exposed outside the surface of the Si substrate; on this basis, a corrosion method is adopted to realize the corrosion for Si and obtain the composite nano-porous structure; by the superficial treatment, the Si is covered with a SiNx layer or SiO2 layer, so as to meet the requirements of subsequent epitaxial growth. After being washed, the product is put into an HVPE system, and the thick film GaN layer grows. The invention greatly simplifies the technique for manufacturing a mask film by photoetching, and is suitable for scientific experiments and batch production.

Description

technical field

[0001] The invention relates to a silicon-based composite nanoporous material substrate used in growing gallium nitride (GaN) film by a hydride vapor phase epitaxy (HVPE) method and a preparation method thereof. The invention aims at improving the quality of epitaxially grown GaN materials and facilitating the stripping of substrates, and belongs to the technical field of material preparation. Background technique

[0002] HVPE is one of the commonly used methods for growing GaN epitaxial materials. It has the characteristics of simple equipment, low price and high growth rate. High-quality thick-film GaN epitaxial layers, followed by exfoliation from foreign substrates, are an excellent route to obtain GaN intrinsic substrates.

[0003] The particularity of the application as a substrate requires that the defect density in the epitaxial material, especially the density of line dislocations, should be low and evenly distributed, and the stress in the materia...

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